NO20073279L - Prosess for produksjon av en polykrystallinsk silisium stopeblokk - Google Patents

Prosess for produksjon av en polykrystallinsk silisium stopeblokk

Info

Publication number
NO20073279L
NO20073279L NO20073279A NO20073279A NO20073279L NO 20073279 L NO20073279 L NO 20073279L NO 20073279 A NO20073279 A NO 20073279A NO 20073279 A NO20073279 A NO 20073279A NO 20073279 L NO20073279 L NO 20073279L
Authority
NO
Norway
Prior art keywords
silicon
polycrystalline silicon
hydrogen
grow
silicon melt
Prior art date
Application number
NO20073279A
Other languages
English (en)
Inventor
Yoshimichi Kimura
Yuichi Sakai
Original Assignee
Noritake Tcf Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noritake Tcf Co Ltd filed Critical Noritake Tcf Co Ltd
Publication of NO20073279L publication Critical patent/NO20073279L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Abstract

Det er tilveiebrakt en fremgangsmåte hvor en polykrystallinsk silisiumstøpeblokk forbedret i levetidskarakteristikker, som er korrelert med konverteringseffektiviteten for solcelleskiver, er produsert billig ved en smeltemetode med ordinært trykk av hydrogenatmosfæren. Fremgangsmåten hindrer oksygengenerering og urenheter i silisiumsmelten, og urenheter av lette elementer fjernes gjennom reaksjon eller krystallisering. Fine krystallkorn kan vokse ved en høy rate, og høyrenhets polykrystallinsk silisiumstøpeblokk som har en krystallstruktur med reduserte krystalldefekter kan vokse. Et silisiumråmateriale smeltes i en atmosfære av 100 % hydrogen ved ordinært trykk eller ved elevert trykk for å fremstille en silisiumsmelte og samtidig oppløse hydrogen i silisiumsmelten. Silisiumsmelten, som inneholder oppløst hydrogen deri, størkner. Deretter holdes det faste stoffet ved en høy temperatur rundt størkningstemperaturen for å la silisiumkrystallkorn vokse i faststoffasen, og derved å oppnå en polykrystallinsk silisiumstøpeblokk.
NO20073279A 2004-11-30 2007-06-27 Prosess for produksjon av en polykrystallinsk silisium stopeblokk NO20073279L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004347083 2004-11-30
PCT/JP2005/021969 WO2006059632A1 (ja) 2004-11-30 2005-11-30 多結晶シリコンインゴットの製造方法

Publications (1)

Publication Number Publication Date
NO20073279L true NO20073279L (no) 2007-08-30

Family

ID=36565066

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20073279A NO20073279L (no) 2004-11-30 2007-06-27 Prosess for produksjon av en polykrystallinsk silisium stopeblokk

Country Status (11)

Country Link
US (1) US20090139446A1 (no)
EP (1) EP1820777A4 (no)
JP (1) JP5007126B2 (no)
KR (1) KR100945517B1 (no)
CN (1) CN101061065B (no)
AU (1) AU2005310598B2 (no)
CA (1) CA2587222C (no)
NO (1) NO20073279L (no)
RU (1) RU2358905C2 (no)
TW (1) TW200624610A (no)
WO (1) WO2006059632A1 (no)

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DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
CN101685048B (zh) * 2008-09-25 2012-10-24 华南师范大学 一种多晶硅的纯度检测方法及装置
JP2010095421A (ja) * 2008-10-17 2010-04-30 Sumco Corp 多結晶シリコンの製造方法及び多結晶シリコンウェーハ
CN101514487B (zh) * 2009-02-27 2011-04-27 浙江碧晶科技有限公司 一种低含氧量硅晶体的制备方法
WO2011048931A1 (ja) * 2009-10-19 2011-04-28 Jx日鉱日石金属株式会社 シリコン又はシリコン合金溶解炉
JP2011201736A (ja) * 2010-03-26 2011-10-13 Mitsubishi Materials Corp 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット
DE102011002598B4 (de) * 2011-01-12 2016-10-06 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Silizium-Ingots
KR101222175B1 (ko) * 2011-03-31 2013-01-14 연세대학교 산학협력단 슬래그와 실리콘의 밀도차이를 이용한 ＭＧ－Ｓｉ중 불순물의 정련 방법
CN102242394A (zh) * 2011-06-15 2011-11-16 安阳市凤凰光伏科技有限公司 铸造法生产类似单晶硅锭投炉硅料和晶种摆放方法
CN102534772B (zh) * 2012-02-28 2014-11-05 江苏协鑫硅材料科技发展有限公司 一种生长大晶粒铸造多晶硅的方法
JP6013313B2 (ja) * 2013-03-21 2016-10-25 東京エレクトロン株式会社 積層型半導体素子の製造方法、積層型半導体素子、及び、その製造装置
CN103233267A (zh) * 2013-05-09 2013-08-07 英利集团有限公司 多晶硅的铸锭工艺
CN103741206B (zh) * 2014-01-28 2016-06-01 西安华晶电子技术股份有限公司 一种多晶硅铸锭熔料及排杂工艺
DE102015201988A1 (de) * 2015-02-05 2016-08-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von multikristallinem Silicium
CN108315813A (zh) * 2018-01-04 2018-07-24 晶科能源有限公司 一种多晶硅铸锭的制备方法
CN109554752A (zh) * 2018-12-26 2019-04-02 赛维Ldk太阳能高科技(新余)有限公司 多晶硅铸锭炉、多晶硅铸锭方法和多晶硅锭

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JPS5899115A (ja) * 1981-12-08 1983-06-13 Nec Corp 多結晶シリコンインゴツトの鋳造方法
DE3504723A1 (de) * 1985-02-12 1986-08-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum reinigen von silicium
DE3760173D1 (en) * 1987-01-08 1989-06-29 Rhone Poulenc Chimie Process for the plasma purification of divided silicon
JPH07277722A (ja) * 1994-02-16 1995-10-24 Sumitomo Chem Co Ltd ケイ素の精製方法
JPH08109012A (ja) * 1994-10-11 1996-04-30 Tonen Corp 多結晶シリコン板の製造方法
CA2377892C (en) * 2000-05-11 2009-02-03 Tokuyama Corporation Polycrystalline silicon, method and apparatus for producing the same
JP2003002626A (ja) * 2001-06-18 2003-01-08 Tokuyama Corp シリコン生成用反応装置
JP4142931B2 (ja) * 2002-10-09 2008-09-03 京セラ株式会社 粒状シリコン結晶の製造装置および製造方法

Also Published As

Publication number Publication date
CN101061065A (zh) 2007-10-24
CN101061065B (zh) 2011-07-27
AU2005310598A1 (en) 2006-06-08
RU2358905C2 (ru) 2009-06-20
EP1820777A1 (en) 2007-08-22
CA2587222C (en) 2011-05-10
WO2006059632A1 (ja) 2006-06-08
EP1820777A4 (en) 2010-01-20
RU2007120074A (ru) 2008-12-10
US20090139446A1 (en) 2009-06-04
AU2005310598B2 (en) 2009-12-03
JPWO2006059632A1 (ja) 2008-06-05
KR20070060152A (ko) 2007-06-12
TW200624610A (en) 2006-07-16
CA2587222A1 (en) 2006-06-08
JP5007126B2 (ja) 2012-08-22
KR100945517B1 (ko) 2010-03-09

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