NO20075331L - Innretning og fremgangsmate for krystallisering av ikke-jernholdige metaller. - Google Patents

Innretning og fremgangsmate for krystallisering av ikke-jernholdige metaller.

Info

Publication number
NO20075331L
NO20075331L NO20075331A NO20075331A NO20075331L NO 20075331 L NO20075331 L NO 20075331L NO 20075331 A NO20075331 A NO 20075331A NO 20075331 A NO20075331 A NO 20075331A NO 20075331 L NO20075331 L NO 20075331L
Authority
NO
Norway
Prior art keywords
crystallization
ferrous metals
ferrous metal
ferrous
metals
Prior art date
Application number
NO20075331A
Other languages
English (en)
Norwegian (no)
Inventor
Armin Mueller
Michael Ghosh
Jens Seidel
Bert Geyer
Original Assignee
Deutsche Solar Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche Solar Ag filed Critical Deutsche Solar Ag
Publication of NO20075331L publication Critical patent/NO20075331L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
NO20075331A 2005-03-23 2007-10-18 Innretning og fremgangsmate for krystallisering av ikke-jernholdige metaller. NO20075331L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005013410A DE102005013410B4 (de) 2005-03-23 2005-03-23 Vorrichtung und Verfahren zum Kristallisieren von Nichteisenmetallen
PCT/EP2006/002258 WO2006099955A1 (de) 2005-03-23 2006-03-11 Vorrichtung und verfahren zum kristallisieren von nichteisenmetallen

Publications (1)

Publication Number Publication Date
NO20075331L true NO20075331L (no) 2007-12-18

Family

ID=36190440

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20075331A NO20075331L (no) 2005-03-23 2007-10-18 Innretning og fremgangsmate for krystallisering av ikke-jernholdige metaller.

Country Status (7)

Country Link
US (1) US7981214B2 (cg-RX-API-DMAC7.html)
EP (1) EP1866247B1 (cg-RX-API-DMAC7.html)
JP (1) JP2008534414A (cg-RX-API-DMAC7.html)
AT (1) ATE440804T1 (cg-RX-API-DMAC7.html)
DE (2) DE102005013410B4 (cg-RX-API-DMAC7.html)
NO (1) NO20075331L (cg-RX-API-DMAC7.html)
WO (1) WO2006099955A1 (cg-RX-API-DMAC7.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008051492A1 (de) 2008-10-13 2010-04-15 Pva Tepla Ag Vorrichtung zum Kristallisieren von Nicht-Eisen-Metallen
DE102009039070B4 (de) 2009-08-27 2016-05-04 Solarworld Innovations Gmbh Verfahren ung Vorrichtung zur Entfernung von Verunreinigungen aus einer Schmelze
DE102009044893B4 (de) * 2009-12-14 2014-10-30 Hanwha Q.CELLS GmbH Herstellungsverfahren zur Herstellung eines Kristallkörpers aus einem Halbleitermaterial
DE102010014724B4 (de) * 2010-04-01 2012-12-06 Deutsche Solar Gmbh Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken
DE102010029741B4 (de) 2010-06-07 2013-02-28 Solarworld Innovations Gmbh Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle
DE102010030124B4 (de) 2010-06-15 2016-07-28 Solarworld Innovations Gmbh Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken sowie nach dem Verfahren hergestellter Silizium-Block
DE102011002599B4 (de) 2011-01-12 2016-06-23 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Silizium-Ingots und Silizium-Ingot
DE102011002598B4 (de) * 2011-01-12 2016-10-06 Solarworld Innovations Gmbh Verfahren zur Herstellung eines Silizium-Ingots
DE102011005503B4 (de) 2011-03-14 2018-11-15 Solarworld Industries Gmbh Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken
ITVI20110076A1 (it) * 2011-04-01 2012-10-02 Ieco Keeps On Improving S R L Macchina per la formatura di barre metalliche
DE102011082628B4 (de) 2011-09-13 2018-10-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken
DE102011086669B4 (de) 2011-11-18 2016-08-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Silizium-Blöcken sowie Silizium-Block
DE102011087759B4 (de) 2011-12-05 2018-11-08 Solarworld Industries Gmbh Verfahren zur Herstellung von Silizium-Ingots und Silizium-Ingot
DE102012203706B4 (de) 2012-02-06 2016-08-11 Solarworld Innovations Gmbh Verfahren zur Herstellung von Silizium-Ingots, Verfahren zur Herstellung von Keimvorlagen, Keimkristall und dessen Verwendung sowie Schmelztiegel
DE102012203524B4 (de) 2012-03-06 2016-10-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Silizium-Ingots
DE102012203527B4 (de) 2012-03-06 2016-10-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung von Silizium-Ingots
DE102012209005B4 (de) 2012-05-29 2016-11-17 Solarworld Innovations Gmbh Keimvorlage und Verfahren zur Herstellung derselben sowie Vorrichtung und Verfahren zur Herstellung eines Silizium-Ingots
US8936652B2 (en) 2012-12-20 2015-01-20 Solarworld Industries America Inc. Method for manufacturing silicon blocks
DE102013203740B4 (de) 2013-03-05 2020-06-18 Solarworld Industries Gmbh Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken
ITTO20130258A1 (it) * 2013-03-28 2014-09-29 Saet Spa Dispositivo e metodo per produrre un blocco di materiale multicristallino, in particolare silicio, mediante solidificazione direzionale
EP2982780B1 (de) 2014-08-04 2019-12-11 Heraeus Quarzglas GmbH & Co. KG Verfahren zur herstellung eines siliziumblocks, zur verfahrensdurchführung geeignete kokille aus quarzglas oder quarzgut sowie verfahren für deren herstellung
CN108441939A (zh) * 2018-03-23 2018-08-24 孟静 稳态晶体生长方法
ES2940919A1 (es) * 2023-02-24 2023-05-12 Univ Madrid Politecnica Cámara de enfriamiento de lingotes metálicos y procedimiento de obtención de un lingote metálico

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DE3323896A1 (de) * 1983-07-02 1985-01-17 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum gerichteten erstarren von schmelzen
US5040773A (en) * 1989-08-29 1991-08-20 Ribbon Technology Corporation Method and apparatus for temperature-controlled skull melting
JP3242292B2 (ja) 1995-06-15 2001-12-25 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP2000001308A (ja) 1998-06-15 2000-01-07 Sharp Corp 多結晶シリコン鋳塊の製造方法及びその製造装置
JP3885452B2 (ja) * 1999-04-30 2007-02-21 三菱マテリアル株式会社 結晶シリコンの製造方法
DE10021585C1 (de) * 2000-05-04 2002-02-28 Ald Vacuum Techn Ag Verfahren und Vorrichtung zum Einschmelzen und Erstarren von Metallen und Halbmetallen in einer Kokille
DE10035097A1 (de) * 2000-07-17 2002-02-07 Didier Werke Ag Heizvorrichtung mit Inneninduktor
JP2002293526A (ja) * 2001-03-29 2002-10-09 Kawasaki Steel Corp 多結晶シリコンの製造装置
JP2002308616A (ja) * 2001-04-06 2002-10-23 Kawasaki Steel Corp 多結晶シリコンの製造方法
DE10234250B4 (de) 2002-07-27 2008-09-25 Deutsche Solar Ag Vorrichtung sowie Verfahren zur Überwachung der Kristallisation von Silizium
JP4777880B2 (ja) * 2004-03-29 2011-09-21 京セラ株式会社 シリコン鋳造装置およびシリコンインゴットの製造方法
JP2006273628A (ja) * 2005-03-28 2006-10-12 Kyocera Corp 多結晶シリコンインゴットの製造方法

Also Published As

Publication number Publication date
DE102005013410A1 (de) 2006-09-28
DE502006004664D1 (de) 2009-10-08
ATE440804T1 (de) 2009-09-15
WO2006099955A1 (de) 2006-09-28
JP2008534414A (ja) 2008-08-28
DE102005013410B4 (de) 2008-01-31
EP1866247B1 (de) 2009-08-26
US7981214B2 (en) 2011-07-19
EP1866247A1 (de) 2007-12-19
US20080264207A1 (en) 2008-10-30

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