PL1897965T3 - Sposób eliminowania wydzieleń z materiału półprzewodnikowego II-VI za pomocą wygrzewania - Google Patents

Sposób eliminowania wydzieleń z materiału półprzewodnikowego II-VI za pomocą wygrzewania

Info

Publication number
PL1897965T3
PL1897965T3 PL07115691T PL07115691T PL1897965T3 PL 1897965 T3 PL1897965 T3 PL 1897965T3 PL 07115691 T PL07115691 T PL 07115691T PL 07115691 T PL07115691 T PL 07115691T PL 1897965 T3 PL1897965 T3 PL 1897965T3
Authority
PL
Poland
Prior art keywords
temperature
semiconductor
precipitates
annealing
eliminating
Prior art date
Application number
PL07115691T
Other languages
English (en)
Inventor
Bernard Pelliciari
Original Assignee
Commissariat Energie Atomique
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique filed Critical Commissariat Energie Atomique
Publication of PL1897965T3 publication Critical patent/PL1897965T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
PL07115691T 2006-09-07 2007-09-05 Sposób eliminowania wydzieleń z materiału półprzewodnikowego II-VI za pomocą wygrzewania PL1897965T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0653612A FR2905706B1 (fr) 2006-09-07 2006-09-07 Procede d'elimination par recuit des precipites dans un materiau semi conducteur ii vi
EP07115691A EP1897965B1 (fr) 2006-09-07 2007-09-05 Procédé d'élimination par recuit des précipités dans un matériau semi-conducteur II-VI

Publications (1)

Publication Number Publication Date
PL1897965T3 true PL1897965T3 (pl) 2009-12-31

Family

ID=37671109

Family Applications (1)

Application Number Title Priority Date Filing Date
PL07115691T PL1897965T3 (pl) 2006-09-07 2007-09-05 Sposób eliminowania wydzieleń z materiału półprzewodnikowego II-VI za pomocą wygrzewania

Country Status (8)

Country Link
US (1) US8021482B2 (pl)
EP (1) EP1897965B1 (pl)
JP (2) JP6004601B2 (pl)
AT (1) ATE435312T1 (pl)
DE (1) DE602007001424D1 (pl)
ES (1) ES2329520T3 (pl)
FR (1) FR2905706B1 (pl)
PL (1) PL1897965T3 (pl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103114335B (zh) * 2011-11-17 2016-04-27 通用电气公司 生产碲化镉或碲锌镉单晶体的方法
WO2013089630A1 (en) * 2011-12-15 2013-06-20 Midsummer Ab Recycling of copper indium gallium diselenide
JP6456782B2 (ja) * 2015-06-23 2019-01-23 Ｊｘ金属株式会社 ＣｄＴｅ系化合物半導体単結晶及びその製造方法
EP3305950B1 (en) * 2015-07-03 2020-02-19 JX Nippon Mining & Metals Corporation CdTe-BASED COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME
JP7250919B2 (ja) 2019-05-17 2023-04-03 Ｊｘ金属株式会社 半導体ウエハ、放射線検出素子、放射線検出器、及び化合物半導体単結晶基板の製造方法
JP7265004B2 (ja) 2019-05-17 2023-04-25 Ｊｘ金属株式会社 半導体ウエハ、放射線検出素子、放射線検出器、及び化合物半導体単結晶基板の製造方法
CN116040590A (zh) * 2022-11-30 2023-05-02 宸亚(兰考县)科技有限公司 回收废碲化镉的工艺

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US3870473A (en) * 1970-09-02 1975-03-11 Hughes Aircraft Co Tandem furnace crystal growing device
US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
JPS577171A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of znsepn junction
US4482423A (en) * 1982-06-25 1984-11-13 At&T Bell Laboratories Protection of semiconductor substrates during epitaxial growth processes
US4481044A (en) * 1982-11-29 1984-11-06 Texas Instruments Incorporated High-temperature Hg anneal for HgCdTe
JPS61106498A (ja) * 1984-07-10 1986-05-24 Yokogawa Hokushin Electric Corp ＣｄＴｅの結晶成長法
JPS6287499A (ja) * 1985-10-14 1987-04-21 Nippon Mining Co Ltd 単結晶ＣｄＴｅの熱処理方法
US4740386A (en) * 1987-03-30 1988-04-26 Rockwell International Corporation Method for depositing a ternary compound having a compositional profile
US4960721A (en) * 1987-11-10 1990-10-02 Kabushiki Kaisha Toshiba Method for purifying group II-IV compound semiconductors
JPH0259485A (ja) * 1988-08-24 1990-02-28 Matsushita Electric Ind Co Ltd 結晶成長方法
JPH0717477B2 (ja) * 1989-03-15 1995-03-01 シャープ株式会社 化合物半導体のエピタキシャル成長方法
US5028296A (en) * 1989-09-15 1991-07-02 Texas Instruments Incorporated Annealing method
JP2832241B2 (ja) * 1989-10-09 1998-12-09 株式会社ジャパンエナジー ▲ｉｉ▼―▲ｖｉ▼族化合物半導体結晶の製造方法
US5041719A (en) * 1990-06-01 1991-08-20 General Electric Company Two-zone electrical furnace for molecular beam epitaxial apparatus
US5201985A (en) * 1991-03-07 1993-04-13 Harald A.T.O. Method and apparatus for the purification and control of the composition of non-stoichiometric and stoichiometric crystalline compounds
JP2746497B2 (ja) * 1992-03-03 1998-05-06 三菱電機株式会社 半導体装置の製造方法
US5599733A (en) * 1993-10-15 1997-02-04 Texas Instruments Incorporated Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces
DE69609568T2 (de) * 1995-05-26 2001-02-01 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung von einem II-VI oder III-V Halbleitereinkristall
JP2839027B2 (ja) * 1997-01-23 1998-12-16 住友電気工業株式会社 Ｉｉ−ｖｉ族化合物半導体の熱処理方法
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JP2003124235A (ja) * 2001-10-17 2003-04-25 Sumitomo Electric Ind Ltd Ｉｉ−ｖｉ族化合物半導体、その熱処理方法およびその熱処理装置

Also Published As

Publication number Publication date
JP2008100900A (ja) 2008-05-01
US20080060729A1 (en) 2008-03-13
FR2905706A1 (fr) 2008-03-14
ES2329520T3 (es) 2009-11-26
FR2905706B1 (fr) 2009-04-17
EP1897965A1 (fr) 2008-03-12
JP2015038035A (ja) 2015-02-26
ATE435312T1 (de) 2009-07-15
JP6004601B2 (ja) 2016-10-12
EP1897965B1 (fr) 2009-07-01
DE602007001424D1 (de) 2009-08-13
US8021482B2 (en) 2011-09-20

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