DE602007001424D1 - Verfahren zum Beseitigen von Ausscheidungen aus einem II-VI Halbleitermaterial durch Glühen. - Google Patents

Verfahren zum Beseitigen von Ausscheidungen aus einem II-VI Halbleitermaterial durch Glühen.

Info

Publication number
DE602007001424D1
DE602007001424D1 DE602007001424T DE602007001424T DE602007001424D1 DE 602007001424 D1 DE602007001424 D1 DE 602007001424D1 DE 602007001424 T DE602007001424 T DE 602007001424T DE 602007001424 T DE602007001424 T DE 602007001424T DE 602007001424 D1 DE602007001424 D1 DE 602007001424D1
Authority
DE
Germany
Prior art keywords
temperature
precipitates
semiconductor material
annealing
eliminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007001424T
Other languages
English (en)
Inventor
Bernard Pelliciari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE602007001424D1 publication Critical patent/DE602007001424D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
DE602007001424T 2006-09-07 2007-09-05 Verfahren zum Beseitigen von Ausscheidungen aus einem II-VI Halbleitermaterial durch Glühen. Active DE602007001424D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0653612A FR2905706B1 (fr) 2006-09-07 2006-09-07 Procede d'elimination par recuit des precipites dans un materiau semi conducteur ii vi

Publications (1)

Publication Number Publication Date
DE602007001424D1 true DE602007001424D1 (de) 2009-08-13

Family

ID=37671109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007001424T Active DE602007001424D1 (de) 2006-09-07 2007-09-05 Verfahren zum Beseitigen von Ausscheidungen aus einem II-VI Halbleitermaterial durch Glühen.

Country Status (8)

Country Link
US (1) US8021482B2 (de)
EP (1) EP1897965B1 (de)
JP (2) JP6004601B2 (de)
AT (1) ATE435312T1 (de)
DE (1) DE602007001424D1 (de)
ES (1) ES2329520T3 (de)
FR (1) FR2905706B1 (de)
PL (1) PL1897965T3 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103114335B (zh) * 2011-11-17 2016-04-27 通用电气公司 生产碲化镉或碲锌镉单晶体的方法
WO2013089630A1 (en) * 2011-12-15 2013-06-20 Midsummer Ab Recycling of copper indium gallium diselenide
JP6456782B2 (ja) * 2015-06-23 2019-01-23 Ｊｘ金属株式会社 ＣｄＴｅ系化合物半導体単結晶及びその製造方法
JP6448789B2 (ja) * 2015-07-03 2019-01-09 Ｊｘ金属株式会社 ＣｄＴｅ系化合物単結晶及びその製造方法
US20220158007A1 (en) 2019-05-17 2022-05-19 Jx Nippon Mining & Metals Corporation Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate
US11967659B2 (en) 2019-05-17 2024-04-23 Jx Metals Corporation Semiconductor wafer, radiation detection element, radiation detector, and production method for compound semiconductor monocrystalline substrate

Family Cites Families (25)

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US3870473A (en) * 1970-09-02 1975-03-11 Hughes Aircraft Co Tandem furnace crystal growing device
US4190486A (en) * 1973-10-04 1980-02-26 Hughes Aircraft Company Method for obtaining optically clear, high resistivity II-VI, III-V, and IV-VI compounds by heat treatment
US4012242A (en) * 1973-11-14 1977-03-15 International Rectifier Corporation Liquid epitaxy technique
JPS577171A (en) * 1980-06-16 1982-01-14 Junichi Nishizawa Manufacture of znsepn junction
US4482423A (en) * 1982-06-25 1984-11-13 At&T Bell Laboratories Protection of semiconductor substrates during epitaxial growth processes
US4481044A (en) * 1982-11-29 1984-11-06 Texas Instruments Incorporated High-temperature Hg anneal for HgCdTe
JPS61106498A (ja) * 1984-07-10 1986-05-24 Yokogawa Hokushin Electric Corp ＣｄＴｅの結晶成長法
JPS6287499A (ja) * 1985-10-14 1987-04-21 Nippon Mining Co Ltd 単結晶ＣｄＴｅの熱処理方法
US4740386A (en) * 1987-03-30 1988-04-26 Rockwell International Corporation Method for depositing a ternary compound having a compositional profile
DE3887274D1 (de) * 1987-11-10 1994-03-03 Toshiba Kawasaki Kk Thermische Behandlung von einer II-VI-Halbleiterverbindung.
JPH0259485A (ja) * 1988-08-24 1990-02-28 Matsushita Electric Ind Co Ltd 結晶成長方法
JPH0717477B2 (ja) * 1989-03-15 1995-03-01 シャープ株式会社 化合物半導体のエピタキシャル成長方法
US5028296A (en) * 1989-09-15 1991-07-02 Texas Instruments Incorporated Annealing method
JP2832241B2 (ja) * 1989-10-09 1998-12-09 株式会社ジャパンエナジー ▲ｉｉ▼―▲ｖｉ▼族化合物半導体結晶の製造方法
US5041719A (en) * 1990-06-01 1991-08-20 General Electric Company Two-zone electrical furnace for molecular beam epitaxial apparatus
US5201985A (en) * 1991-03-07 1993-04-13 Harald A.T.O. Method and apparatus for the purification and control of the composition of non-stoichiometric and stoichiometric crystalline compounds
JP2746497B2 (ja) * 1992-03-03 1998-05-06 三菱電機株式会社 半導体装置の製造方法
US5599733A (en) * 1993-10-15 1997-02-04 Texas Instruments Incorporated Method using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfaces
EP0744476B1 (de) * 1995-05-26 2000-08-02 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung von einem II-VI oder III-V Halbleitereinkristall
JP2839027B2 (ja) * 1997-01-23 1998-12-16 住友電気工業株式会社 Ｉｉ−ｖｉ族化合物半導体の熱処理方法
JPH10212192A (ja) * 1997-01-27 1998-08-11 Japan Energy Corp バルク結晶の成長方法
US6299680B1 (en) * 1998-05-11 2001-10-09 Japan Energy Corporation CdTe crystal or CdZnTe crystal and method for preparing the same
US6613162B1 (en) * 1999-10-25 2003-09-02 Rensselaer Polytechnic Institute Multicomponent homogeneous alloys and method for making same
JP2001332506A (ja) * 2000-05-19 2001-11-30 Sumitomo Electric Ind Ltd ＺｎＳｅ結晶基板の熱処理方法、熱処理基板及び発光素子
JP2003124235A (ja) * 2001-10-17 2003-04-25 Sumitomo Electric Ind Ltd Ｉｉ−ｖｉ族化合物半導体、その熱処理方法およびその熱処理装置

Also Published As

Publication number Publication date
JP2015038035A (ja) 2015-02-26
EP1897965A1 (de) 2008-03-12
ATE435312T1 (de) 2009-07-15
JP6004601B2 (ja) 2016-10-12
FR2905706A1 (fr) 2008-03-14
EP1897965B1 (de) 2009-07-01
PL1897965T3 (pl) 2009-12-31
JP2008100900A (ja) 2008-05-01
US8021482B2 (en) 2011-09-20
US20080060729A1 (en) 2008-03-13
ES2329520T3 (es) 2009-11-26
FR2905706B1 (fr) 2009-04-17

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