WO2012165855A3 - Method of development for the enhancement of thermoelectric efficiency of thermoelectric material through annealing process - Google Patents

Method of development for the enhancement of thermoelectric efficiency of thermoelectric material through annealing process Download PDF

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Publication number
WO2012165855A3
WO2012165855A3 PCT/KR2012/004260 KR2012004260W WO2012165855A3 WO 2012165855 A3 WO2012165855 A3 WO 2012165855A3 KR 2012004260 W KR2012004260 W KR 2012004260W WO 2012165855 A3 WO2012165855 A3 WO 2012165855A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermoelectric
heat treatment
nanowire
efficiency
bismuth telluride
Prior art date
Application number
PCT/KR2012/004260
Other languages
French (fr)
Other versions
WO2012165855A2 (en
Inventor
Jong Min Lee
Original Assignee
Lg Innotek Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Innotek Co., Ltd. filed Critical Lg Innotek Co., Ltd.
Publication of WO2012165855A2 publication Critical patent/WO2012165855A2/en
Publication of WO2012165855A3 publication Critical patent/WO2012165855A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Powder Metallurgy (AREA)

Abstract

Provided is a thermoelectric nanowire and a method for improving thermoelectric efficiency thereof using heat treatment. Particularly, the method for improving thermoelectric efficiency of the thermoelectric nanowire includes a first process of synthesizing a nanowire of bismuth telluride (Bi2Te3) in a porous support; and a second process of receiving the nanowire of the bismuth telluride (Bi2Te3) in a sealing boat separated from an atmosphere and including inert gas to perform heat treatment while a tellurium powder fills the sealing boat. According to the present invention, heat treatment is performed using a sealing boat that is completely sealed in order to avoid a loss due to evaporation of a tellurium component by an increase in heat treatment temperature to improve crystallinity of a material including bismuth telluride, thus increasing thermoelectric efficiency.
PCT/KR2012/004260 2011-05-30 2012-05-30 Method of development for the enhancement of thermoelectric efficiency of thermoelectric material through annealing process WO2012165855A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0051461 2011-05-30
KR1020110051461A KR101853828B1 (en) 2011-05-30 2011-05-30 Method of development for the enhancement of thermoelectric efficiency of thermoelectric material through annealing process

Publications (2)

Publication Number Publication Date
WO2012165855A2 WO2012165855A2 (en) 2012-12-06
WO2012165855A3 true WO2012165855A3 (en) 2013-03-28

Family

ID=47260073

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/004260 WO2012165855A2 (en) 2011-05-30 2012-05-30 Method of development for the enhancement of thermoelectric efficiency of thermoelectric material through annealing process

Country Status (2)

Country Link
KR (1) KR101853828B1 (en)
WO (1) WO2012165855A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106549096A (en) * 2016-12-08 2017-03-29 苏州鸿凌达电子科技有限公司 Thermoelectric film material and its manufacture craft

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101528516B1 (en) * 2013-09-06 2015-06-12 한국과학기술연구원 Highly flexible thermoelectric material comprising organic-inorganic hybrid composite and thermoelectirc device comprising the same
KR101709755B1 (en) * 2014-10-31 2017-02-23 주식회사 엘지화학 Chemical compound forming method using isostatic-pressure solid-state reaction
KR101719928B1 (en) * 2015-12-23 2017-03-27 한국세라믹기술원 MANUFACTURING METHOD OF Bi-Te BASED CERAMICS
CN114249305B (en) * 2020-09-23 2023-05-05 北京信息科技大学 Bismuth telluride-based thermoelectric film with stable wide temperature range performance and preparation method thereof
CN112376112B (en) * 2020-09-30 2022-03-25 杭州大和热磁电子有限公司 Method for improving refrigeration temperature difference of thermoelectric solid-state refrigerator
CN114671688A (en) * 2022-03-08 2022-06-28 成都露思特新材料科技有限公司 3D printing piece of bismuth telluride-based thermoelectric material, printing method thereof and thermoelectric device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100019977A (en) * 2008-08-11 2010-02-19 삼성전자주식회사 Anisotropically elongated thermoelectric nanocomposite, process for preparing the same, and device comprising the material
KR20100138171A (en) * 2009-06-24 2010-12-31 이화여자대학교 산학협력단 Preparation method of bismuth telluride nanostructures having various morphology by hydrothermal synthesis and bismuth telluride nanostructures
KR20110041214A (en) * 2009-10-15 2011-04-21 연세대학교 산학협력단 Core/shell structure nanowire fabrication method for thermoelectricity
KR20110049580A (en) * 2009-11-05 2011-05-12 삼성전자주식회사 Thermoelectric nano-complex, and thermoelectric module and thermoelectric apparatus comprising same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100019977A (en) * 2008-08-11 2010-02-19 삼성전자주식회사 Anisotropically elongated thermoelectric nanocomposite, process for preparing the same, and device comprising the material
KR20100138171A (en) * 2009-06-24 2010-12-31 이화여자대학교 산학협력단 Preparation method of bismuth telluride nanostructures having various morphology by hydrothermal synthesis and bismuth telluride nanostructures
KR20110041214A (en) * 2009-10-15 2011-04-21 연세대학교 산학협력단 Core/shell structure nanowire fabrication method for thermoelectricity
KR20110049580A (en) * 2009-11-05 2011-05-12 삼성전자주식회사 Thermoelectric nano-complex, and thermoelectric module and thermoelectric apparatus comprising same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106549096A (en) * 2016-12-08 2017-03-29 苏州鸿凌达电子科技有限公司 Thermoelectric film material and its manufacture craft
CN106549096B (en) * 2016-12-08 2019-03-26 苏州鸿凌达电子科技有限公司 Thermoelectric film material and its manufacture craft

Also Published As

Publication number Publication date
KR20120133009A (en) 2012-12-10
KR101853828B1 (en) 2018-05-02
WO2012165855A2 (en) 2012-12-06

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