CN114249305B - Bismuth telluride-based thermoelectric film with stable wide temperature range performance and preparation method thereof - Google Patents
Bismuth telluride-based thermoelectric film with stable wide temperature range performance and preparation method thereof Download PDFInfo
- Publication number
- CN114249305B CN114249305B CN202011006224.5A CN202011006224A CN114249305B CN 114249305 B CN114249305 B CN 114249305B CN 202011006224 A CN202011006224 A CN 202011006224A CN 114249305 B CN114249305 B CN 114249305B
- Authority
- CN
- China
- Prior art keywords
- film
- bismuth telluride
- thermoelectric
- thermoelectric film
- temperature range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
Abstract
The invention relates to a bismuth telluride-based thermoelectric film with stable wide temperature range performance and a preparation method thereof, wherein a layer of thermoelectric film is deposited on a substrate, then in-situ annealing treatment is carried out on the thermoelectric film under control conditions, and finally, stepped cyclic annealing treatment is carried out on the annealed thermoelectric film, so that a thermoelectric film material with wide temperature range stability is finally prepared, the change of an orientation structure is beneficial to improving the thermoelectric performance of the material, the in-situ annealing treatment is carried out on the thermoelectric film, so that the film material can fully grow in a growth environment, meanwhile, the internal stress and the film-based stress of the film are relieved, the structural stability of the film material is enhanced, the stepped annealing process is beneficial to regulating and controlling the carrier transport performance of the material according to the structural characteristics of thermoelectric materials with different orientation structures, and therefore, the bismuth telluride-based thermoelectric film material can realize better performance and stability of the film material in a wide temperature range under the condition of improving the thermoelectric performance.
Description
Technical Field
The invention belongs to the technical field of film material preparation, and particularly relates to a bismuth telluride-based thermoelectric film with stable wide temperature range performance and a preparation method thereof.
Background
Thermoelectric conversion technology has received a great deal of attention in the fields of microelectronic energy collection, power generation, refrigeration, sensing, and the like, due to its unique direct conversion characteristics between thermal energy and electrical energy. In recent years, the record of the performance of the thermoelectric block material is continuously refreshed, and a solid foundation is laid for the development of the application technology of thermoelectric devices. However, the preparation and application technology of the thermoelectric film material in China is far lagged behind the development of the thermoelectric block material science at present, and particularly the wide-temperature-range performance stability of the thermoelectric film material severely restricts the further application of the film material. From the aspect of transport mechanism, the wide temperature range performance stability of the Seebeck coefficient and the conductivity of the thermoelectric material can be improved through the electric transport property regulation and control of the material.
Bismuth telluride-based materials are currently regarded as thermoelectric materials with optimal performance in the room temperature region, and high attention is paid to the research on the performance of the bismuth telluride-based materials in all aspects. The performance of the bismuth telluride-based thermoelectric material is greatly improved in the fifth sixty of the 20 th century. However, in recent 50 years thereafter, research on bismuth telluride-based thermoelectric materials has progressed very slowly. Based on the development of nano technology, the thin film technology is gradually applied to the thermoelectric field, and meanwhile, the thin film thermoelectric material provides huge space for enhancing thermoelectric figure of merit. Numerous studies have shown that microstructure modulation of materials has a very large impact on thermoelectric performance. The carrier transport performance of the material can be effectively regulated and controlled by regulating and controlling the nano structure in the film, controlling the diffusion of metal elements and the like, and the aim of high-precision carrier regulation is fulfilled, so that the stability of the material in a larger temperature range is further regulated and controlled.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a bismuth telluride-based thermoelectric film with stable wide temperature range performance and a preparation method thereof. The bismuth telluride-based thin film material can realize the stability of structure and electrical property in the temperature range of 300-500K. According to the invention, through the design of stepwise annealing of the thermoelectric film in inert atmosphere, the regulation and control of the film material structure and performance stability are realized under the condition of basically not changing the electrical and thermal properties of the material.
The technical scheme adopted by the invention is as follows:
the preparation method of the bismuth telluride-based thermoelectric film with stable wide temperature range performance is characterized by comprising the following steps:
(1) Preparing a layer of thermoelectric film on a substrate;
(2) Carrying out in-situ annealing treatment on the thermoelectric film in the step (1);
(3) And (3) carrying out multi-step cyclic annealing treatment on the thermoelectric film subjected to the in-situ annealing treatment in the step (2) to obtain the bismuth telluride-based thermoelectric film with stable wide temperature range performance.
In the step (1), the thermoelectric film is prepared by adopting a method of co-sputtering a thermoelectric material and a tellurium target, and the thickness is 50-5000nm.
In the step (1), the thermoelectric film is any one of a (015) crystal face preferred orientation particle stacking film, a (015) crystal face preferred orientation inclined lamellar composite film, a (00 l) crystal face and (015) crystal face composite orientation film and a (00 l) crystal face preferred orientation lamellar film.
In the step (1), the substrate is any one or a mixture of a plurality of silicon, quartz, aluminum nitride and copper foil.
The thermoelectric film in the step (1) can be prepared by any one of a magnetron sputtering process and a vacuum evaporation process, and the process specifically comprises the following steps: the alternating current of the co-sputtering Te target connected with the radio frequency target is 40-80A, and the voltage is 0.25-0.60kV; the control current for co-evaporation of the crucible containing Te particles was 30A.
In the step (2), the annealing treatment specifically includes: and performing in-situ annealing treatment at 100-400 ℃ and 0.5-3Pa for 10-50min.
The annealing of the stable thermoelectric film in the step (3) adopts a multi-step cyclic annealing process, and the annealing treatment specifically comprises the following steps: and (3) carrying out step annealing treatment for 10-50min at 100-400 ℃ and 0.5-3Pa under the atmosphere of inert gases Ar, he and the like, and repeating the steps for 1-10 times after natural cooling.
In the step (3), the structure of the bismuth telluride-based thermoelectric film is still any one of a (015) crystal face preferred orientation particle stacking film, a (015) crystal face preferred orientation inclined layered composite film, a (00 l) crystal face and (015) crystal face composite orientation film and a (00 l) crystal face preferred orientation layered film.
The beneficial effects of the invention are as follows:
according to the preparation method of the bismuth telluride-based thermoelectric film with stable wide temperature range performance, a layer of thermoelectric film is deposited on a substrate, then in-situ annealing treatment is carried out on the thermoelectric film under a control condition, and finally the thermoelectric film after annealing treatment is subjected to step annealing treatment, so that the thermoelectric film material with stable wide temperature range is finally prepared, wherein the steps are as follows: the thermoelectric film material with the specific orientation structure is prepared by inducing the orientation structure of the film material from the initial growth stage of the film, the thermoelectric performance of the material is improved by changing the orientation structure, the film material can fully grow in a growth environment by carrying out in-situ annealing treatment on the thermoelectric film, meanwhile, the internal stress and the film base stress of the film are relieved, the structural stability of the film material is enhanced, and the step annealing process is beneficial to regulating and controlling the carrier transport performance of the material according to the structural characteristics of the thermoelectric material with different orientation structures, so that the bismuth telluride base thermoelectric film material can realize controllable regulation of the film structure and the performance stability within a wide temperature range; according to the invention, through the orientation structural design and the stepwise annealing treatment of the thermoelectric film material, the film material has better performance and stability in a wide temperature range under the condition of improving the thermoelectric performance.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is an SEM surface view of a (015) crystal plane preferred orientation particle film according to example 1 of the present invention;
FIG. 2 is an SEM surface view of a film having an inclined lamellar composite structure with preferred orientation of the (015) crystal plane according to example 2 of the present invention;
FIG. 3 is an SEM surface view of a (00 l) and (015) crystal plane oriented composite structural film according to example 3 of the invention;
FIG. 4 is an SEM surface view of a (00 l) plane preferential orientation layered structure film according to example 4 of the present invention;
fig. 5 is an SEM surface view of a film having an unstable structure according to a comparative example of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, based on the examples herein, which are within the scope of the invention as defined by the claims, will be within the scope of the invention as defined by the claims.
Example 1
The bismuth telluride-based thermoelectric film is a (015) crystal face preferred orientation particle stacking film, and is prepared by the following method:
(1) Taking silicon as a substrate, preprocessing the substrate, specifically: sequentially soaking the substrate in detergent water, deionized water, ethanol and acetone for ultrasonic cleaning to obtain a pretreated substrate;
a layer of bismuth telluride-based thermoelectric film with the thickness of 50nm is deposited on a substrate by adopting a magnetron sputtering co-sputtering process, and the specific conditions of the co-sputtering are as follows:
the air pressure is 1.0Pa, the deposition temperature is 40 ℃, and the deposition time is 10min; the bismuth telluride-based target is fixed on a direct current power supply: the current of the direct current is 100mA, and the voltage is 0.3kV; tellurium target is fixed on radio frequency power: the current of the alternating current was 40mA and the voltage was 0.25kV.
(2) Annealing the bismuth telluride-based thermoelectric film in the step (1) for 10min at 100 ℃ under the condition of 0.5 Pa;
(3) Performing a multi-step cyclic annealing process on the bismuth telluride-based thermoelectric film subjected to the annealing treatment in the step (2) by adopting a vacuum annealing furnace to obtain the bismuth telluride-based thermoelectric film with stable wide temperature range performance;
the specific conditions of the annealing process are as follows:
the atmosphere is Ar gas, the air pressure is 0.5Pa, the temperature is 40 ℃, the annealing time is 10min, and the cycle number is 1.
The bismuth telluride-based thermoelectric film with stable wide temperature range performance is obtained according to the steps, and is characterized in that the conductivity of the bismuth telluride-based thermoelectric film is 1 multiplied by 10 4 s m -1 Seebeck coefficient of 100 mu V K -1 A thermal conductivity of 0.45. 0.45W m -1 K -1 The performance can not rise or fall along with the change of temperature, and is stable within the temperature range of 300-500K, and the numerical value change rate is less than 5%.
An SEM surface view of the (015) crystal plane preferred orientation particle film is shown in fig. 1, which shows: the film is formed by stacking spherical particles with uniform size, the conductivity of the film is reduced due to more interfaces of the particles stacked on the film, and meanwhile, the crystal form integrity is poor, so that the Seebeck coefficient of the material is low.
Example 2
The bismuth telluride-based thermoelectric film is a layered composite structure film with a preferred orientation of a (015) crystal face, and is prepared by the following method:
(1) Taking quartz as a substrate, preprocessing the substrate, specifically: sequentially soaking the substrate in detergent water, deionized water, ethanol and acetone for ultrasonic cleaning to obtain a pretreated substrate;
depositing a bismuth telluride-based thermoelectric film with the thickness of 5000nm on a substrate by adopting a magnetron sputtering co-sputtering process, wherein the specific conditions of the co-sputtering are as follows:
the air pressure is 1.0Pa, the deposition temperature is 250 ℃, and the deposition time is 5 hours; the bismuth telluride-based target is fixed on a direct current power supply: the current of the direct current is 100mA, and the voltage is 0.3kV; tellurium target is fixed on radio frequency power: the current of the alternating current is 60mA and the voltage is 0.50kV.
(2) Annealing the bismuth telluride-based thermoelectric film in the step (1) for 30min at 250 ℃ under the condition of 1.0 Pa;
(3) Performing a multi-step cyclic annealing process on the bismuth telluride-based thermoelectric film subjected to the annealing treatment in the step (2) by adopting a vacuum annealing furnace to obtain the bismuth telluride-based thermoelectric film with stable wide temperature range performance;
the specific conditions of the annealing process are as follows:
the atmosphere is He gas, the air pressure is 1.5Pa, the temperature is kept at 100 ℃ for 10min, the temperature is kept at 150 ℃ for 15min and the temperature is kept at 250 ℃ for 30min, and the cycle times are 4 times.
The bismuth telluride-based thermoelectric film with stable wide temperature range performance is obtained according to the steps, and is characterized in that the conductivity of the bismuth telluride-based thermoelectric film is 6 multiplied by 10 4 s m -1 Seebeck coefficient of 180 mu V K -1 A thermal conductivity of 1.00. 1.00W m -1 K -1 The performance can not rise or fall along with the change of temperature, and is stable within the temperature range of 300-500K, and the numerical rate of change is smaller than5％。
An SEM surface diagram of the (015) crystal face preferred orientation inclined lamellar composite structure film is shown in fig. 2, which shows: the film is formed by stacking inclined flaky sheets with uniform size, and the conductivity and the Seebeck coefficient of the material are improved due to the improvement of the crystal form integrity of the material.
Example 3
The bismuth telluride-based thermoelectric film is a film with a (00 l) crystal face and (015) crystal face composite orientation structure, and is prepared by the following method:
(1) Taking aluminum nitride as a substrate, preprocessing the substrate, specifically: sequentially soaking the substrate in detergent water, deionized water, ethanol and acetone for ultrasonic cleaning to obtain a pretreated substrate;
depositing a bismuth telluride-based thermoelectric film with the thickness of 500nm on a substrate by adopting a vacuum evaporation process, wherein the specific conditions of the vacuum evaporation process are as follows:
the air pressure was 1.0X10 -3 Pa, the deposition temperature is 300 ℃, and the deposition time is 30min; the control current of the crucible filled with bismuth telluride particles is 100A; the control current for the crucible containing tellurium particles was 30A.
(2) Annealing the bismuth telluride-based thermoelectric film in the step (1) for 30min at 300 ℃ under the condition of 2.0 Pa;
(3) Performing a multi-step cyclic annealing process on the bismuth telluride-based thermoelectric film subjected to the annealing treatment in the step (2) by adopting a vacuum annealing furnace to obtain the bismuth telluride-based thermoelectric film with stable wide temperature range performance;
the specific conditions of the annealing process are as follows:
the atmosphere is Ar gas, the air pressure is 2.0Pa, the temperature is kept at 100 ℃ for 10min, the temperature is kept at 150 ℃ for 15min and 250 ℃ for 30min, the temperature is kept at 300 ℃ for 50min, and the cycle times are 10 times.
The bismuth telluride-based thermoelectric film with stable wide temperature range performance is obtained according to the steps, and is characterized in thatConductivity of 15X 10 4 s m -1 Seebeck coefficient of 220 mu V K -1 A thermal conductivity of 1.50. 1.50W m - 1 K -1 The performance can not rise or fall along with the change of temperature, and is stable within the temperature range of 300-500K, and the numerical value change rate is less than 5%.
An SEM surface view of the (00 l) crystal plane and (015) crystal plane oriented composite structural film is shown in fig. 3, which shows: the thin film is formed by stacking inclined sheet-shaped thin sheets with uniform sizes, the inclination angle of the thin film is reduced, the gaps between the sheets are reduced, the compactness of the thin film is enhanced, the electric conductivity of the material is greatly improved, the Seebeck coefficient is also improved, and the heat conductivity is correspondingly increased due to the great improvement of the electric conductivity.
Example 4
The bismuth telluride-based thermoelectric film is a (00 l) crystal face preferred orientation layered structure film, and is prepared by the following method:
(1) The method comprises the steps of taking copper foil as a substrate, and preprocessing the substrate, specifically: sequentially soaking the substrate in detergent water, deionized water, ethanol and acetone for ultrasonic cleaning to obtain a pretreated substrate;
a silicon dioxide insulating layer with the thickness of 200nm is deposited on a substrate by adopting a magnetron sputtering process, and then a bismuth telluride-based thermoelectric film with the thickness of about 1000nm is deposited on the insulating layer by adopting a magnetron sputtering co-sputtering process, wherein the specific conditions of the co-sputtering are as follows:
the air pressure is 3.0Pa, the deposition temperature is 400 ℃, and the deposition time is 5 hours; the bismuth telluride-based target is fixed on a direct current power supply: the current of the direct current is 100mA, and the voltage is 0.3kV; tellurium target is fixed on radio frequency power: the current of the alternating current is 80mA and the voltage is 0.60kV.
(2) Annealing the bismuth telluride-based thermoelectric film in the step (1) at 400 ℃ under the condition of 3.0Pa for 50min;
(3) Performing a multi-step cyclic annealing process on the bismuth telluride-based thermoelectric film subjected to the annealing treatment in the step (2) by adopting a vacuum annealing furnace to obtain the bismuth telluride-based thermoelectric film with stable wide temperature range performance;
the specific conditions of the annealing process are as follows:
the atmosphere is Ar gas, the air pressure is 3.0Pa, the temperature is kept at 100 ℃ for 10min, the temperature is kept at 150 ℃ for 15min and 250 ℃ for 30min, the temperature is kept at 400 ℃ for 50min, and the cycle times are 5 times.
The bismuth telluride-based thermoelectric film with stable wide temperature range performance is obtained according to the steps, and is characterized in that the conductivity of the bismuth telluride-based thermoelectric film is 3 multiplied by 10 4 s m -1 Seebeck coefficient of 300 mu V K -1 A thermal conductivity of 1.20. 1.20W m -1 K -1 The performance can not rise or fall along with the change of temperature, and is stable within the temperature range of 300-500K, and the numerical value change rate is less than 5%.
An SEM surface view of the (00 l) crystal plane preferred orientation layered structure film is shown in fig. 4, which shows: the film is composed of flaky slices with uniform size, and the conductivity and Seebeck coefficient of the material are improved due to the improvement of the crystal form integrity of the material.
Comparative example
This comparative example provides a bismuth telluride-based thermoelectric film differing from example 4 only in: the post annealing process is different, specifically:
the multi-step circulation annealing process is not adopted, and the annealing is directly carried out for 50min at 400 ℃, so that the prepared bismuth telluride-based thin film has no stable structure.
An SEM surface view of the film with unstable structure is shown in fig. 5, which shows: the surface of the film is volatilized to form a large amount of dendritic compounds, so that the structure of the film is thoroughly destroyed, and the performance is greatly reduced.
Experimental example
The SEM surface structures of the bismuth telluride-based thermoelectric film materials obtained in examples 1 to 4 and comparative examples are as follows.
An SEM surface view of the (015) crystal plane preferred orientation particle film is shown in fig. 1, which shows: the film is formed by stacking spherical particles with uniform size, the conductivity of the film is reduced due to more interfaces of the particles stacked on the film, and meanwhile, the crystal form integrity is poor, so that the Seebeck coefficient of the material is low.
An SEM surface diagram of the (015) crystal face preferred orientation inclined lamellar composite structure film is shown in fig. 2, which shows: the film is formed by stacking inclined flaky sheets with uniform size, and the conductivity and the Seebeck coefficient of the material are improved due to the improvement of the crystal form integrity of the material.
An SEM surface view of the (00 l) crystal plane and (015) crystal plane oriented composite structural film is shown in fig. 3, which shows: the thin film is formed by stacking inclined sheet-shaped thin sheets with uniform sizes, the inclination angle of the thin film is reduced, the gaps between the sheets are reduced, the compactness of the thin film is enhanced, the electric conductivity of the material is greatly improved, the Seebeck coefficient is also improved, and the heat conductivity is correspondingly increased due to the great improvement of the electric conductivity.
An SEM surface view of the (00 l) crystal plane preferred orientation layered structure film is shown in fig. 4, which shows: the film is composed of flaky slices with uniform size, and the conductivity and Seebeck coefficient of the material are improved due to the improvement of the crystal form integrity of the material.
An SEM surface view of the film with unstable structure is shown in fig. 5, which shows: the surface of the film is volatilized to form a large amount of dendritic compounds, so that the structure of the film is thoroughly destroyed, and the performance is greatly reduced.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (4)
1. The preparation method of the bismuth telluride-based thermoelectric film with stable wide temperature range performance is characterized by comprising the following steps:
(1) Preparing a layer of thermoelectric film on a substrate;
the thermoelectric film is prepared by adopting a method of co-sputtering a thermoelectric material and a tellurium target, and the thickness is 50-5000nm;
the thermoelectric film is any one of a (015) crystal face preferred orientation particle stacking film, a (015) crystal face preferred orientation inclined lamellar composite film, a (00 l) crystal face and (015) crystal face composite orientation film and a (00 l) crystal face preferred orientation lamellar film;
(2) Carrying out in-situ annealing treatment on the thermoelectric film in the step (1); the annealing treatment specifically comprises the following steps: performing in-situ annealing treatment at 100-400 ℃ and 0.5-3Pa for 10-50min;
(3) Carrying out multi-step cyclic annealing treatment on the thermoelectric film subjected to the in-situ annealing treatment in the step (2) to obtain the bismuth telluride-based thermoelectric film with stable wide temperature range performance;
the multi-step cyclic annealing treatment specifically comprises the following steps: carrying out step annealing treatment for 10-50min at 100-400 ℃ and 0.5-3Pa in the atmosphere of inert gas Ar or He, and repeating the steps for 1-10 times after natural cooling;
the conductivity of the bismuth telluride-based thermoelectric film is 1-15 multiplied by 10 4 S m -1 Seebeck coefficient of 100-300 mu V K -1 A thermal conductivity of 0.45-1.50W m -1 K -1 The performance can not rise or fall along with the change of temperature, and is stable within the temperature range of 300-500K, and the numerical change rate is less than 5%.
2. The method for preparing a bismuth telluride-based thermoelectric film with stable wide temperature range performance according to claim 1, wherein in the step (1), the substrate is any one or a mixture of several of silicon, quartz, aluminum nitride and copper foil.
3. The preparation method of the bismuth telluride-based thermoelectric film with stable wide temperature range performance according to claim 1, wherein the preparation of the bismuth telluride-based thermoelectric film adopts a magnetron sputtering co-sputtering process, and the process specifically comprises the following steps: the alternating current of the co-sputtering Te target connected with the radio frequency target is 40-80A, and the voltage is 0.25-0.60kV.
4. A bismuth telluride-based thermoelectric film having stable wide temperature range performance made according to the method of any one of claims 1-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011006224.5A CN114249305B (en) | 2020-09-23 | 2020-09-23 | Bismuth telluride-based thermoelectric film with stable wide temperature range performance and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011006224.5A CN114249305B (en) | 2020-09-23 | 2020-09-23 | Bismuth telluride-based thermoelectric film with stable wide temperature range performance and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114249305A CN114249305A (en) | 2022-03-29 |
| CN114249305B true CN114249305B (en) | 2023-05-05 |
Family
ID=80788544
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011006224.5A Active CN114249305B (en) | 2020-09-23 | 2020-09-23 | Bismuth telluride-based thermoelectric film with stable wide temperature range performance and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114249305B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012165855A2 (en) * | 2011-05-30 | 2012-12-06 | Lg Innotek Co., Ltd. | Method of development for the enhancement of thermoelectric efficiency of thermoelectric material through annealing process |
| CN106399937A (en) * | 2016-06-17 | 2017-02-15 | 中国科学院电工研究所 | Method for preparing preferred-orientation bismuth telluride thermoelectric thin film |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978590A (en) * | 2012-11-27 | 2013-03-20 | 上海大学 | Multi-cycle rapid thermal annealing method of amorphous silicon film |
| CN109554674A (en) * | 2018-10-09 | 2019-04-02 | 中国科学院电工研究所 | A kind of preparation method of the bismuth telluride thermal electric film with heterojunction structure |
| CN110316973B (en) * | 2019-04-28 | 2021-07-06 | 山东省科学院新材料研究所 | Lanthanum-titanium co-doped bismuth ferrite film and preparation method thereof |
| CN111276598B (en) * | 2020-03-20 | 2022-08-30 | 北京航空航天大学杭州创新研究院 | Printed bismuth telluride film suitable for wide temperature range and preparation method thereof |
-
2020
- 2020-09-23 CN CN202011006224.5A patent/CN114249305B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012165855A2 (en) * | 2011-05-30 | 2012-12-06 | Lg Innotek Co., Ltd. | Method of development for the enhancement of thermoelectric efficiency of thermoelectric material through annealing process |
| CN106399937A (en) * | 2016-06-17 | 2017-02-15 | 中国科学院电工研究所 | Method for preparing preferred-orientation bismuth telluride thermoelectric thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114249305A (en) | 2022-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201250020A (en) | Sodium sputtering doping method for large scale cigs based thin film photovoltaic materials | |
| WO2011107035A1 (en) | Method for preparing copper-indium-gallium-selenium film for solar cell photo-absorption layer by magnetron sputtering process | |
| CN101798680B (en) | Magnetron sputtering preparation process for Mg2Si thin film made of environment-friendly semiconductor material | |
| CN106868469B (en) | A method of non-metal catalyst prepares graphene in silicon substrate | |
| He et al. | Enhancement of thermoelectric performance of N-type Bi2Te3 based thin films via in situ annealing during magnetron sputtering | |
| CN106399937B (en) | A method of preparing preferred orientation bismuth telluride thermal electric film | |
| CN109837514B (en) | Nano-scale porous selenium/telluride film material and preparation method thereof | |
| CN105039909A (en) | Photovoltaic material and preparing method thereof | |
| JP2003179238A (en) | Manufacturing method of thin film solar battery | |
| CN114249305B (en) | Bismuth telluride-based thermoelectric film with stable wide temperature range performance and preparation method thereof | |
| TW200913284A (en) | Method for the production of a transparent conductive oxide coating | |
| CN103451599A (en) | Cadmium telluride/bismuth telluride integrated nano structure material with photo-thermal synergic electric generation and preparation method thereof | |
| Liao et al. | Microstructural revolution of CIGS thin film using CuInGa ternary target during sputtering process | |
| KR20090100692A (en) | The method of manufacturing cigs thin film by using three-step heat treatment and cigs solar cell | |
| CN115161610B (en) | Preparation method of copper antimony selenium solar cell light absorption layer film | |
| CN112458420A (en) | Silver telluride-silver sulfide film with nanorod array and preparation method thereof | |
| CN104051577B (en) | Manufacturing method capable of improving crystallization property of copper zinc tin sulfur film of solar cell absorption layer | |
| JP2003282600A (en) | Method and device for manufacturing light-absorbing layer | |
| CN109267016A (en) | Pulse laser deposits MoS2The method of film | |
| KR101388458B1 (en) | Preparation method for cigs thin film using rapid thermal processing | |
| JP2003282908A (en) | Method and device for manufacturing light absorbing layer | |
| JPH07258881A (en) | Production of cuinse2 film | |
| CN112481593A (en) | Method for preparing antimony trisulfide copper film on solar cell absorption layer through gas-solid reaction | |
| CN112376028A (en) | Sn doped Ge2Sb2Te5Thermoelectric film and method for manufacturing the same | |
| Wu et al. | Effect of selenization processes on CIGS solar cell performance |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |