JP2016225563A5 - - Google Patents

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JP2016225563A5
JP2016225563A5 JP2015113043A JP2015113043A JP2016225563A5 JP 2016225563 A5 JP2016225563 A5 JP 2016225563A5 JP 2015113043 A JP2015113043 A JP 2015113043A JP 2015113043 A JP2015113043 A JP 2015113043A JP 2016225563 A5 JP2016225563 A5 JP 2016225563A5
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Japan
Prior art keywords
layer
czts
forming
based compound
light absorbing
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Pending
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JP2015113043A
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Japanese (ja)
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JP2016225563A (en
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Priority to JP2015113043A priority Critical patent/JP2016225563A/en
Priority claimed from JP2015113043A external-priority patent/JP2016225563A/en
Publication of JP2016225563A publication Critical patent/JP2016225563A/en
Publication of JP2016225563A5 publication Critical patent/JP2016225563A5/ja
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Claims (10)

太陽電池の製造方法であって、
表面に裏側電極層が設けられた基板を準備するステップと、
前記裏側電極層上にCu、Zn、Sn、及びSeを含むCZTS系層を形成するステップと、
Geを含む雰囲気中で前記CZTS系層を加熱し溶融させて、Geを含むCZTS系化合物からなる光吸収層を形成するステップと、
前記光吸収層上にバッファ層を形成するステップと、
前記バッファ層上に表側電極層を形成するステップと、を含む製造方法。
A solar cell manufacturing method comprising:
Preparing a substrate provided with a back electrode layer on the surface;
Forming a CZTS-based layer containing Cu, Zn, Sn, and Se on the back electrode layer;
Heating said CZTS based layer in an atmosphere containing Ge is melted, forming a light absorbing layer made of including C ZTS based compound Ge,
Forming a buffer layer on the light absorbing layer;
Forming a front electrode layer on the buffer layer.
前記CZTS系層は、(1)Znの一部を置換したMg、(2)SnまたはGeの一部を置換したSi、(3)Seの一部を置換したS、TeまたはOの中の少なくとも1つの元素をさらに含む、請求項1に記載の製造方法。   The CZTS-based layer includes (1) Mg in which a part of Zn is substituted, (2) Si in which a part of Sn or Ge is substituted, and (3) S, Te or O in which a part of Se is substituted. The manufacturing method according to claim 1, further comprising at least one element. 前記CZTS系化合物は、CuZn(Sn、Ge)Seで表される化合物を含む、請求項1に記載の製造方法。 The CZTS-based compound comprises Cu 2 Zn (Sn, Ge) compounds represented by Se 4, The method according to claim 1. 前記CZTS系化合物は、Cu(Mg、Zn)(Si、Ge、Sn)(S、Se)で表される化合物を含む、請求項2に記載の製造方法。 The CZTS based compound, Cu 2 (Mg, Zn) (Si, Ge, Sn) (S, Se) 4 containing a compound represented by the process of claim 2. 前記Geを含む雰囲気は、SnとSeをさらに含む、請求項1に記載の製造方法。   The manufacturing method according to claim 1, wherein the atmosphere containing Ge further contains Sn and Se. 前記光吸収層を形成するステップは、前記CZTS系層を450〜550℃の範囲の温度で加熱するステップを含む、請求項1または5に記載の製造方法。   6. The method according to claim 1 or 5, wherein the step of forming the light absorption layer includes a step of heating the CZTS-based layer at a temperature in a range of 450 to 550C. 前記CZTS系化合物の粒径は、前記光吸収層の膜厚以上の長さを含む、請求項1または5に記載の製造方法。 The manufacturing method according to claim 1 or 5, wherein a particle size of the CZTS compound includes a length equal to or greater than a film thickness of the light absorption layer. 表面に裏側電極層が設けられた基板と、
前記裏側電極層上に設けられた光吸収層であって、Geを含むCZTS系化合物からなる光吸収層と、
前記光吸収層上のバッファ層と、
前記バッファ層上の表側電極層と、を備える太陽電池。
A substrate having a back electrode layer on the surface;
A light absorbing layer provided on the back side electrode layer, a light absorbing layer made of including C ZTS based compound Ge,
A buffer layer on the light absorbing layer;
A solar cell comprising: a front electrode layer on the buffer layer.
前記CZTS系化合物は、CuZn(Sn、Ge)Se、またはCu(Mg、Zn)(Si、Ge、Sn)(S、Se)で表される化合物の少なくとも一方を含む、請求項8に記載の太陽電池。 The CZTS-based compound includes at least one of compounds represented by Cu 2 Zn (Sn, Ge) Se 4 or Cu 2 (Mg, Zn) (Si, Ge, Sn) (S, Se) 4. Item 9. The solar cell according to Item 8. 前記CZTS系化合物の粒径は、前記光吸収層の膜厚以上の長さを含む、請求項8に記載の太陽電池。 The solar cell according to claim 8, wherein the particle size of the CZTS-based compound includes a length equal to or greater than the film thickness of the light absorption layer.
JP2015113043A 2015-06-03 2015-06-03 Solar cell and method of manufacturing the same Pending JP2016225563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015113043A JP2016225563A (en) 2015-06-03 2015-06-03 Solar cell and method of manufacturing the same

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Application Number Priority Date Filing Date Title
JP2015113043A JP2016225563A (en) 2015-06-03 2015-06-03 Solar cell and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JP2016225563A JP2016225563A (en) 2016-12-28
JP2016225563A5 true JP2016225563A5 (en) 2018-02-15

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JP2015113043A Pending JP2016225563A (en) 2015-06-03 2015-06-03 Solar cell and method of manufacturing the same

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JP7306521B2 (en) * 2017-06-29 2023-07-11 株式会社三洋物産 game machine
JP7052231B2 (en) * 2017-06-29 2022-04-12 株式会社三洋物産 Pachinko machine
JP7306522B2 (en) * 2017-08-15 2023-07-11 株式会社三洋物産 game machine
JP7323005B2 (en) * 2017-08-25 2023-08-08 株式会社三洋物産 game machine
JP7306506B2 (en) * 2017-10-31 2023-07-11 株式会社三洋物産 game machine
JP7294499B2 (en) * 2017-11-10 2023-06-20 株式会社三洋物産 game machine
JP7294498B2 (en) * 2017-11-10 2023-06-20 株式会社三洋物産 game machine
JP7294497B2 (en) * 2017-11-10 2023-06-20 株式会社三洋物産 game machine
JP7306498B2 (en) * 2017-11-15 2023-07-11 株式会社三洋物産 game machine
JP7069658B2 (en) * 2017-11-15 2022-05-18 株式会社三洋物産 Pachinko machine
JP7306499B2 (en) * 2017-11-15 2023-07-11 株式会社三洋物産 game machine
JP7069659B2 (en) * 2017-11-15 2022-05-18 株式会社三洋物産 Pachinko machine
JP7056123B2 (en) * 2017-12-13 2022-04-19 株式会社三洋物産 Pachinko machine
JP7056122B2 (en) * 2017-12-13 2022-04-19 株式会社三洋物産 Pachinko machine

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US20130240797A1 (en) * 2010-12-06 2013-09-19 Kabushiki Kaisha Toyota Chuo Kenkyusho Compound semiconductor
US8889466B2 (en) * 2013-04-12 2014-11-18 International Business Machines Corporation Protective insulating layer and chemical mechanical polishing for polycrystalline thin film solar cells
JP2015002270A (en) * 2013-06-14 2015-01-05 株式会社豊田中央研究所 Light absorption layer and photoelectric conversion element

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