MD3934C2 - Process for obtaining the substrate of BaF2 with perfect surface - Google Patents
Process for obtaining the substrate of BaF2 with perfect surfaceInfo
- Publication number
- MD3934C2 MD3934C2 MDA20080235A MD20080235A MD3934C2 MD 3934 C2 MD3934 C2 MD 3934C2 MD A20080235 A MDA20080235 A MD A20080235A MD 20080235 A MD20080235 A MD 20080235A MD 3934 C2 MD3934 C2 MD 3934C2
- Authority
- MD
- Moldova
- Prior art keywords
- substrate
- baf2
- obtaining
- during
- perfect surface
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the field of planar technology for obtaining semiconductor layers of the type A4B6, particularly to a process for obtaining the substrate of BaF2 with perfect surface.The process includes spalling and cutting of the initial substrate along the chosen crystallographic directions, mechanochemical polishing of the surface, vacuum annealing of substrate at the temperature of 973°K, during 30 min, then deposition of an additional layer of BaF2 in superhigh vacuum at the substrate temperature of 1023°K, during 3...5 min, with continuous control of the surface quality by the fast electron diffraction method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20080235A MD3934C2 (en) | 2008-09-08 | 2008-09-08 | Process for obtaining the substrate of BaF2 with perfect surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20080235A MD3934C2 (en) | 2008-09-08 | 2008-09-08 | Process for obtaining the substrate of BaF2 with perfect surface |
Publications (2)
Publication Number | Publication Date |
---|---|
MD3934B1 MD3934B1 (en) | 2009-06-30 |
MD3934C2 true MD3934C2 (en) | 2010-01-31 |
Family
ID=40942300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20080235A MD3934C2 (en) | 2008-09-08 | 2008-09-08 | Process for obtaining the substrate of BaF2 with perfect surface |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD3934C2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD249Z (en) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for manufacturing a thermoelectric cooler for the Chip substrate |
MD241Z (en) * | 2009-12-29 | 2011-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Method for producing PbS nanoparticles stabilized with gelatine |
MD242Z (en) * | 2010-01-26 | 2011-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Method for producing hydrophilic PbS nanocrystals |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2005122937A (en) * | 2002-12-20 | 2006-01-20 | Новалюкс, Инк. (Us) | METHOD FOR MAKING A SUPPORT STRUCTURE FOR A SEMICONDUCTOR DEVICE |
MD3327G2 (en) * | 2006-09-27 | 2007-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining photosensitive composite from amorphous chalcogenide semiconductor and organic polymer |
RU2347741C1 (en) * | 2007-08-27 | 2009-02-27 | Государственное образовательное учреждение высшего профессионального образования "Уральский государственный технический университет - УПИ имени первого Президента России Б.Н.Ельцина" | Method of producing nanocrystalline coats based on nanocrystals of lithium or sodium fluoride |
MD3652G2 (en) * | 2007-04-20 | 2009-02-28 | Институт Прикладной Физики Академии Наук Молдовы | Photoluminescent nanocomposite on base of oxidic semiconductor and organic polymer (variants) |
-
2008
- 2008-09-08 MD MDA20080235A patent/MD3934C2/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2005122937A (en) * | 2002-12-20 | 2006-01-20 | Новалюкс, Инк. (Us) | METHOD FOR MAKING A SUPPORT STRUCTURE FOR A SEMICONDUCTOR DEVICE |
MD3327G2 (en) * | 2006-09-27 | 2007-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining photosensitive composite from amorphous chalcogenide semiconductor and organic polymer |
MD3652G2 (en) * | 2007-04-20 | 2009-02-28 | Институт Прикладной Физики Академии Наук Молдовы | Photoluminescent nanocomposite on base of oxidic semiconductor and organic polymer (variants) |
RU2347741C1 (en) * | 2007-08-27 | 2009-02-27 | Государственное образовательное учреждение высшего профессионального образования "Уральский государственный технический университет - УПИ имени первого Президента России Б.Н.Ельцина" | Method of producing nanocrystalline coats based on nanocrystals of lithium or sodium fluoride |
Non-Patent Citations (4)
Title |
---|
Bis R. F., Farabaugh E. N., Muth E. P. Preparation of polished substrates of BaF2 // J. Appl. Phys. – 1976. – Vol.47, Nr.2. – P.736-740. * |
Bis R. F., Farabaugh E. N., Muth E. P. Preparation of polished substrates of BaF2, J. Appl. Phys., 1976, Vol. 47, Nr. 2, P.736-740 * |
gгsitг 07.02.2009 <http://www.fnm.ru/documents/18/Novoselova.pdf gгsitг 07.02.2009>) * |
Новоселова А.С. Выращивание эпитаксиальных слоев PbSe на рассогласованных подложках (www.fnm.ru/documents/18/Novoselova.pdf * |
Also Published As
Publication number | Publication date |
---|---|
MD3934B1 (en) | 2009-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |