MD3934C2 - Procedeu de obţinere a substratului de BaF2 cu suprafaţă perfectă - Google Patents
Procedeu de obţinere a substratului de BaF2 cu suprafaţă perfectăInfo
- Publication number
- MD3934C2 MD3934C2 MDA20080235A MD20080235A MD3934C2 MD 3934 C2 MD3934 C2 MD 3934C2 MD A20080235 A MDA20080235 A MD A20080235A MD 20080235 A MD20080235 A MD 20080235A MD 3934 C2 MD3934 C2 MD 3934C2
- Authority
- MD
- Moldova
- Prior art keywords
- substrate
- baf2
- obtaining
- during
- perfect surface
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Invenţia se referă la domeniul tehnologiei planare de obţinere a straturilor semiconductoare de tip A4B6, în special la un procedeu de obţinere a substratului de BaF2 cu suprafaţă perfectă.Procedeul includedetaşarea sau tăierea substratului iniţial de-a lungul direcţiilor cristalografice alese, şlefuirea chimico-mecanică a suprafeţei, recoacerea în vid a substratului la temperatura de 973ºK, timp de 30 min, apoi depunerea unui strat suplimentar de BaF2 în vid supraînalt la temperatura substratului de 1023ºK, timp de 3…5 min, cu controlul neîntrerupt al calităţii suprafeţei prin metoda difracţiei electronilor rapizi.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20080235A MD3934C2 (ro) | 2008-09-08 | 2008-09-08 | Procedeu de obţinere a substratului de BaF2 cu suprafaţă perfectă |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20080235A MD3934C2 (ro) | 2008-09-08 | 2008-09-08 | Procedeu de obţinere a substratului de BaF2 cu suprafaţă perfectă |
Publications (2)
Publication Number | Publication Date |
---|---|
MD3934B1 MD3934B1 (ro) | 2009-06-30 |
MD3934C2 true MD3934C2 (ro) | 2010-01-31 |
Family
ID=40942300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20080235A MD3934C2 (ro) | 2008-09-08 | 2008-09-08 | Procedeu de obţinere a substratului de BaF2 cu suprafaţă perfectă |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD3934C2 (ro) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD249Z (ro) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat |
MD241Z (ro) * | 2009-12-29 | 2011-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de obţinere a nanoparticulelor de PbS stabilizate cu gelatină |
MD242Z (ro) * | 2010-01-26 | 2011-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de obţinere a nanocristalelor hidrofile PbS |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2005122937A (ru) * | 2002-12-20 | 2006-01-20 | Новалюкс, Инк. (Us) | Способ изготовления опорной структуры для полупроводникового устройства |
MD3327G2 (ro) * | 2006-09-27 | 2007-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de obţinere a compozitului fotosensibil din semiconductor calcogenic amorf şi polimer organic |
RU2347741C1 (ru) * | 2007-08-27 | 2009-02-27 | Государственное образовательное учреждение высшего профессионального образования "Уральский государственный технический университет - УПИ имени первого Президента России Б.Н.Ельцина" | Способ получения нанокристаллических покрытий на основе нанокристаллов фторида лития или фторида натрия |
MD3652G2 (ro) * | 2007-04-20 | 2009-02-28 | Институт Прикладной Физики Академии Наук Молдовы | Nanocompozit fotoluminescent compus din semiconductor oxidic si polimer organic (variante) |
-
2008
- 2008-09-08 MD MDA20080235A patent/MD3934C2/ro not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2005122937A (ru) * | 2002-12-20 | 2006-01-20 | Новалюкс, Инк. (Us) | Способ изготовления опорной структуры для полупроводникового устройства |
MD3327G2 (ro) * | 2006-09-27 | 2007-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Procedeu de obţinere a compozitului fotosensibil din semiconductor calcogenic amorf şi polimer organic |
MD3652G2 (ro) * | 2007-04-20 | 2009-02-28 | Институт Прикладной Физики Академии Наук Молдовы | Nanocompozit fotoluminescent compus din semiconductor oxidic si polimer organic (variante) |
RU2347741C1 (ru) * | 2007-08-27 | 2009-02-27 | Государственное образовательное учреждение высшего профессионального образования "Уральский государственный технический университет - УПИ имени первого Президента России Б.Н.Ельцина" | Способ получения нанокристаллических покрытий на основе нанокристаллов фторида лития или фторида натрия |
Non-Patent Citations (4)
Title |
---|
Bis R. F., Farabaugh E. N., Muth E. P. Preparation of polished substrates of BaF2 // J. Appl. Phys. – 1976. – Vol.47, Nr.2. – P.736-740. * |
Bis R. F., Farabaugh E. N., Muth E. P. Preparation of polished substrates of BaF2, J. Appl. Phys., 1976, Vol. 47, Nr. 2, P.736-740 * |
gгsitг 07.02.2009 <http://www.fnm.ru/documents/18/Novoselova.pdf gгsitг 07.02.2009>) * |
Новоселова А.С. Выращивание эпитаксиальных слоев PbSe на рассогласованных подложках (www.fnm.ru/documents/18/Novoselova.pdf * |
Also Published As
Publication number | Publication date |
---|---|
MD3934B1 (ro) | 2009-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |