MD3934B1 - Process for obtaining the substrate of BaF2 with perfect surface - Google Patents
Process for obtaining the substrate of BaF2 with perfect surfaceInfo
- Publication number
- MD3934B1 MD3934B1 MDA20080235A MD20080235A MD3934B1 MD 3934 B1 MD3934 B1 MD 3934B1 MD A20080235 A MDA20080235 A MD A20080235A MD 20080235 A MD20080235 A MD 20080235A MD 3934 B1 MD3934 B1 MD 3934B1
- Authority
- MD
- Moldova
- Prior art keywords
- substrate
- baf2
- obtaining
- vacuum
- perfect surface
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Inventia se refera la domeniul tehnologiei planare de obtinere a straturilor semiconductoare de tip A4B6, in special la un procedeu de obtinere a substratului de BaF2 cu suprafata perfecta. Procedeul include detasarea sau taierea substratului initial de-a lungul directiilor cristalografice alese, slefuirea chimico-mecanica a suprafetei, recoacerea in vid a substratului la temperatura de 973°K, timp de 30 min, apoi depunerea unui strat suplimentar de BaF2 in vid suprainalt la temperatura substratului de 1023°K, timp de 3…5 min, cu controlul neintrerupt al calitatii suprafetei prin metoda difractiei electronilor rapizi. Revendicari: 1 Figuri:The invention relates to the field of planar technology for obtaining the A4B6 type semiconductor layers, in particular to a process for obtaining the BaF2 substrate with perfect surface. The process includes detachment or cutting of the initial substrate along the chosen crystallographic directions, the chemical-mechanical grinding of the surface, the annealing of the substrate in vacuum at 973 ° K, for 30 minutes, and then depositing an additional layer of BaF2 in the super vacuum at substrate temperature of 1023 ° K, for 3 ... 5 min, with uninterrupted control of surface quality by the fast electron diffraction method. Claims: 1 Figures:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20080235A MD3934C2 (en) | 2008-09-08 | 2008-09-08 | Process for obtaining the substrate of BaF2 with perfect surface |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20080235A MD3934C2 (en) | 2008-09-08 | 2008-09-08 | Process for obtaining the substrate of BaF2 with perfect surface |
Publications (2)
Publication Number | Publication Date |
---|---|
MD3934B1 true MD3934B1 (en) | 2009-06-30 |
MD3934C2 MD3934C2 (en) | 2010-01-31 |
Family
ID=40942300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20080235A MD3934C2 (en) | 2008-09-08 | 2008-09-08 | Process for obtaining the substrate of BaF2 with perfect surface |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD3934C2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD249Z (en) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for manufacturing a thermoelectric cooler for the Chip substrate |
MD242Z (en) * | 2010-01-26 | 2011-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Method for producing hydrophilic PbS nanocrystals |
MD241Z (en) * | 2009-12-29 | 2011-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Method for producing PbS nanoparticles stabilized with gelatine |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7189589B2 (en) * | 2002-12-20 | 2007-03-13 | Novalux, Inc. | Method of fabrication of a support structure for a semiconductor device |
MD3327G2 (en) * | 2006-09-27 | 2007-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Process for obtaining photosensitive composite from amorphous chalcogenide semiconductor and organic polymer |
MD3652G2 (en) * | 2007-04-20 | 2009-02-28 | Институт Прикладной Физики Академии Наук Молдовы | Photoluminescent nanocomposite on base of oxidic semiconductor and organic polymer (variants) |
RU2347741C1 (en) * | 2007-08-27 | 2009-02-27 | Государственное образовательное учреждение высшего профессионального образования "Уральский государственный технический университет - УПИ имени первого Президента России Б.Н.Ельцина" | Method of producing nanocrystalline coats based on nanocrystals of lithium or sodium fluoride |
-
2008
- 2008-09-08 MD MDA20080235A patent/MD3934C2/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD249Z (en) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for manufacturing a thermoelectric cooler for the Chip substrate |
MD241Z (en) * | 2009-12-29 | 2011-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Method for producing PbS nanoparticles stabilized with gelatine |
MD242Z (en) * | 2010-01-26 | 2011-03-31 | Институт Прикладной Физики Академии Наук Молдовы | Method for producing hydrophilic PbS nanocrystals |
Also Published As
Publication number | Publication date |
---|---|
MD3934C2 (en) | 2010-01-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG4A | Patent for invention issued | ||
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |