WO2009072631A1 - Method for manufacturing nitride semiconductor element, and nitride semiconductor element - Google Patents

Method for manufacturing nitride semiconductor element, and nitride semiconductor element Download PDF

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Publication number
WO2009072631A1
WO2009072631A1 PCT/JP2008/072203 JP2008072203W WO2009072631A1 WO 2009072631 A1 WO2009072631 A1 WO 2009072631A1 JP 2008072203 W JP2008072203 W JP 2008072203W WO 2009072631 A1 WO2009072631 A1 WO 2009072631A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor element
nitride semiconductor
mask
manufacturing
substrate
Prior art date
Application number
PCT/JP2008/072203
Other languages
French (fr)
Japanese (ja)
Inventor
Yukio Shakuda
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO2009072631A1 publication Critical patent/WO2009072631A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Provided is a method for manufacturing a nitride semiconductor element having high crystal qualities, in the case of forming the nitride semiconductor element by selective growth by using a buffer layer. A nitride semiconductor element is also provided. A mask (11) for selective growth is formed on a substrate (1) for growth, and the mask (11) is patterned to a prescribed shape by removing a part of the mask. Then, an AlN buffer layer (2) is crystal-grown at a temperature of 900°C or higher. Therefore, the AlN buffer layer (2) is not formed on the mask (11) left on the substrate (1) but is formed on an exposed surface of the substrate (1).
PCT/JP2008/072203 2007-12-05 2008-12-05 Method for manufacturing nitride semiconductor element, and nitride semiconductor element WO2009072631A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007315205 2007-12-05
JP2007-315205 2007-12-05

Publications (1)

Publication Number Publication Date
WO2009072631A1 true WO2009072631A1 (en) 2009-06-11

Family

ID=40717809

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072203 WO2009072631A1 (en) 2007-12-05 2008-12-05 Method for manufacturing nitride semiconductor element, and nitride semiconductor element

Country Status (1)

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WO (1) WO2009072631A1 (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012111884A1 (en) * 2011-02-16 2012-08-23 Seoul Opto Device Co., Ltd. Laminate substrate and method of fabricating the same
WO2014064395A1 (en) * 2012-10-26 2014-05-01 Aledia Optoelectronic device and method for manufacturing same
WO2014064276A1 (en) * 2012-10-26 2014-05-01 Aledia Optoelectric device and method for manufacturing the same
WO2014184487A1 (en) * 2013-05-14 2014-11-20 Aledia Optoelectronic device and method for manufacturing same
WO2014184486A1 (en) * 2013-05-14 2014-11-20 Aledia Optoelectronic device and method for manufacturing same
US9679966B2 (en) 2012-10-26 2017-06-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9698011B2 (en) 2012-10-26 2017-07-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
WO2022210401A1 (en) * 2021-03-31 2022-10-06 株式会社ジャパンディスプレイ Laminated structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021789A (en) * 1997-08-29 2000-01-21 Toshiba Corp Nitride semiconductor element, light emitting element and their manufacture
JP2001007449A (en) * 1999-06-25 2001-01-12 Fuji Electric Co Ltd Iii nitride semiconductor thin film and its manufacture
JP2002164292A (en) * 2000-11-29 2002-06-07 Sumitomo Chem Co Ltd Compound semiconductor substrate and method of manufacturing the same
JP2003158296A (en) * 2001-11-22 2003-05-30 Sharp Corp Nitride semiconductor light emitting device chip and its manufacturing method
JP2004002081A (en) * 2002-05-30 2004-01-08 Namiki Precision Jewel Co Ltd Patterning sapphire substrate
JP2006316308A (en) * 2005-05-11 2006-11-24 Furukawa Co Ltd Method of forming group iii nitride semiconductor layer, method of manufacturing group iii nitride semiconductor substrate, and group iii nitride semiconductor substrate
JP2007243006A (en) * 2006-03-10 2007-09-20 Kyocera Corp Vapor deposition method of nitride semiconductor, epitaxial substrate, and semiconductor device using the same
JP2007254258A (en) * 2005-06-06 2007-10-04 Sumitomo Electric Ind Ltd Nitride semiconductor substrate and method for producing the same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000021789A (en) * 1997-08-29 2000-01-21 Toshiba Corp Nitride semiconductor element, light emitting element and their manufacture
JP2001007449A (en) * 1999-06-25 2001-01-12 Fuji Electric Co Ltd Iii nitride semiconductor thin film and its manufacture
JP2002164292A (en) * 2000-11-29 2002-06-07 Sumitomo Chem Co Ltd Compound semiconductor substrate and method of manufacturing the same
JP2003158296A (en) * 2001-11-22 2003-05-30 Sharp Corp Nitride semiconductor light emitting device chip and its manufacturing method
JP2004002081A (en) * 2002-05-30 2004-01-08 Namiki Precision Jewel Co Ltd Patterning sapphire substrate
JP2006316308A (en) * 2005-05-11 2006-11-24 Furukawa Co Ltd Method of forming group iii nitride semiconductor layer, method of manufacturing group iii nitride semiconductor substrate, and group iii nitride semiconductor substrate
JP2007254258A (en) * 2005-06-06 2007-10-04 Sumitomo Electric Ind Ltd Nitride semiconductor substrate and method for producing the same
JP2007243006A (en) * 2006-03-10 2007-09-20 Kyocera Corp Vapor deposition method of nitride semiconductor, epitaxial substrate, and semiconductor device using the same

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8957426B2 (en) 2011-02-16 2015-02-17 Seoul Viosys Co., Ltd. Laminate substrate and method of fabricating the same
KR20120094406A (en) * 2011-02-16 2012-08-24 서울옵토디바이스주식회사 Substrate having stacked layers and method of fabricating the same
JP2012166995A (en) * 2011-02-16 2012-09-06 Seoul Opto Devices Co Ltd Laminated substrate, and method for manufacturing the same
KR101909737B1 (en) * 2011-02-16 2018-10-18 서울바이오시스 주식회사 Substrate having stacked layers and method of fabricating the same
WO2012111884A1 (en) * 2011-02-16 2012-08-23 Seoul Opto Device Co., Ltd. Laminate substrate and method of fabricating the same
US9331242B2 (en) 2012-10-26 2016-05-03 Aledia Optoelectronic device and method for manufacturing same
US9537044B2 (en) 2012-10-26 2017-01-03 Aledia Optoelectric device and method for manufacturing the same
US10636653B2 (en) 2012-10-26 2020-04-28 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
WO2014064395A1 (en) * 2012-10-26 2014-05-01 Aledia Optoelectronic device and method for manufacturing same
FR2997552A1 (en) * 2012-10-26 2014-05-02 Aledia OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
WO2014064276A1 (en) * 2012-10-26 2014-05-01 Aledia Optoelectric device and method for manufacturing the same
US9991342B2 (en) 2012-10-26 2018-06-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9728679B2 (en) 2012-10-26 2017-08-08 Aledia Optoelectronic device and method for manufacturing same
US9679966B2 (en) 2012-10-26 2017-06-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device
US9698011B2 (en) 2012-10-26 2017-07-04 Commissariat A L'energie Atomique Et Aux Energies Alternatives Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps
WO2014184487A1 (en) * 2013-05-14 2014-11-20 Aledia Optoelectronic device and method for manufacturing same
US9537050B2 (en) 2013-05-14 2017-01-03 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device and method for manufacturing same
US10050080B2 (en) 2013-05-14 2018-08-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optoelectronic device and method for manufacturing same
FR3005785A1 (en) * 2013-05-14 2014-11-21 Aledia OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
WO2014184486A1 (en) * 2013-05-14 2014-11-20 Aledia Optoelectronic device and method for manufacturing same
WO2022210401A1 (en) * 2021-03-31 2022-10-06 株式会社ジャパンディスプレイ Laminated structure

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