MD249Z - Process for manufacturing a thermoelectric cooler for the Chip substrate - Google Patents

Process for manufacturing a thermoelectric cooler for the Chip substrate Download PDF

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Publication number
MD249Z
MD249Z MDS20090070A MDS20090070A MD249Z MD 249 Z MD249 Z MD 249Z MD S20090070 A MDS20090070 A MD S20090070A MD S20090070 A MDS20090070 A MD S20090070A MD 249 Z MD249 Z MD 249Z
Authority
MD
Moldova
Prior art keywords
chip substrate
manufacturing
thermoelectric cooler
layer
thermoelectric
Prior art date
Application number
MDS20090070A
Other languages
Romanian (ro)
Russian (ru)
Inventor
Ефим ЗАСАВИЦКИЙ
Александр БЕЛЕНЧУК
Олег ШАПОВАЛ
Original Assignee
Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы filed Critical Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы
Priority to MDS20090070A priority Critical patent/MD249Z/en
Publication of MD249Y publication Critical patent/MD249Y/en
Publication of MD249Z publication Critical patent/MD249Z/en

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Abstract

The invention relates to processes for manufacturing a thermoelectric cooler for the Chip substrate and may find its application in various fields of microelectronics, computer engineering, medicine and other fields, requiring heat removal.The process for manufacturing a thermoelectric cooler for the Chip substrate consists in that the Chip substrate made of silicon is treated chemically, annealed at a temperature of 1073K for 3...5 min in an ultrahigh vacuum chamber. Then, it is applied thereon a double intermediate layer based on fluorides, at a temperature of 973K, composed of a CaF2 layer of a thickness of 2...3 nm and a BaF2 layer of a thickness of about 150 nm, at a speed of 0.1 nm/s. On the double intermediate layer is applied a thermoelectric transforming layer made of a semiconductor material of A4B6 type, on which is paced a radiator with a fan.
MDS20090070A 2009-04-29 2009-04-29 Process for manufacturing a thermoelectric cooler for the Chip substrate MD249Z (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDS20090070A MD249Z (en) 2009-04-29 2009-04-29 Process for manufacturing a thermoelectric cooler for the Chip substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDS20090070A MD249Z (en) 2009-04-29 2009-04-29 Process for manufacturing a thermoelectric cooler for the Chip substrate

Publications (2)

Publication Number Publication Date
MD249Y MD249Y (en) 2010-07-30
MD249Z true MD249Z (en) 2011-02-28

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ID=45815089

Family Applications (1)

Application Number Title Priority Date Filing Date
MDS20090070A MD249Z (en) 2009-04-29 2009-04-29 Process for manufacturing a thermoelectric cooler for the Chip substrate

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MD (1) MD249Z (en)

Citations (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD627F2 (en) * 1994-07-25 1996-11-29 Univ De Stat Din Moldova The method of making epitaxy layers of phosphide indium from gaz phase
MD957G2 (en) * 1996-09-12 1999-02-28 Государственный Университет Молд0 Process and installation for obtaining multilayer epitaxial structures
RU2129246C1 (en) * 1993-09-03 1999-04-20 Кабусики Кайся Секуто Кагаку Heat-radial panel and method of cooling by means of such panel
MD20000111A (en) * 2000-06-27 2002-07-31 Vieru Stanislav Device for vacuum cleaving of epitaxial semiconductor structures
RU2196683C2 (en) * 1997-11-07 2003-01-20 Денки Кагаку Когио Кабусики Кайся Substrate, method for its production (versions) and metallic compound of articles
RU2198949C2 (en) * 1999-03-16 2003-02-20 Хитачи, Лтд. Composite material, process of its production, panel of semiconductor device emitting heat, semiconductor device ( variants ), dielectric panel and electrostatic absorbing facility
RU2206502C2 (en) * 2000-11-21 2003-06-20 Акционерное общество закрытого типа "Карбид" Composite material
RU2214698C2 (en) * 1998-07-08 2003-10-20 Квин Мэри Энд Уестфилд Колледж Heat removing facility, electric system including heat removing facility, process of manufacture of heat removing facility and of electric component
MD2556G2 (en) * 2004-06-01 2005-03-31 Ион ТИГИНЯНУ Process for semiconductor nanostructures obtaining
RU2004133862A (en) * 2003-11-21 2006-04-27 Эл Джи Электроникс Инк. (Kr) SYSTEM AND METHOD OF HEAT RADIATION FOR MOBILE COMMUNICATION TERMINAL
RU2005137313A (en) * 2003-05-01 2006-04-27 Квин Мэри Энд Уестфилд Колледж (Gb) THE THERMAL-CONTROLLING DEVICE INCLUDED IN THE SHELL AND THE METHOD FOR PRODUCING SUCH A DEVICE
RU2006110512A (en) * 2003-09-03 2007-10-20 Дженерал Электрик Компани (US) HEAT-CONDUCTING MATERIAL USING ELECTRONIC NANOPARTICLES
MD20070209A (en) * 2007-07-23 2009-01-31 Технический университет Молдовы Process for obtaining thin films of oxide semiconductors
MD3934B1 (en) * 2008-09-08 2009-06-30 Institutul De Inginerie Electronica Si Tehnologii Industriale Al Academiei De Stiinte A Moldovei Process for obtaining the substrate of BaF2 with perfect surface
MD20070296A (en) * 2007-10-31 2009-07-31 Institutul De Inginerie Electronica Si Tehnologii Industriale Al Academiei De Stiinte A Moldovei Method for increasing the microwire magnetic resistance on base of solid heterogeneous materials
MD20080058A (en) * 2008-02-25 2009-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for obtaining superconducting layers
  • 2009

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2129246C1 (en) * 1993-09-03 1999-04-20 Кабусики Кайся Секуто Кагаку Heat-radial panel and method of cooling by means of such panel
MD627F2 (en) * 1994-07-25 1996-11-29 Univ De Stat Din Moldova The method of making epitaxy layers of phosphide indium from gaz phase
MD957G2 (en) * 1996-09-12 1999-02-28 Государственный Университет Молд0 Process and installation for obtaining multilayer epitaxial structures
RU2196683C2 (en) * 1997-11-07 2003-01-20 Денки Кагаку Когио Кабусики Кайся Substrate, method for its production (versions) and metallic compound of articles
RU2214698C2 (en) * 1998-07-08 2003-10-20 Квин Мэри Энд Уестфилд Колледж Heat removing facility, electric system including heat removing facility, process of manufacture of heat removing facility and of electric component
RU2198949C2 (en) * 1999-03-16 2003-02-20 Хитачи, Лтд. Composite material, process of its production, panel of semiconductor device emitting heat, semiconductor device ( variants ), dielectric panel and electrostatic absorbing facility
MD20000111A (en) * 2000-06-27 2002-07-31 Vieru Stanislav Device for vacuum cleaving of epitaxial semiconductor structures
RU2206502C2 (en) * 2000-11-21 2003-06-20 Акционерное общество закрытого типа "Карбид" Composite material
RU2005137313A (en) * 2003-05-01 2006-04-27 Квин Мэри Энд Уестфилд Колледж (Gb) THE THERMAL-CONTROLLING DEVICE INCLUDED IN THE SHELL AND THE METHOD FOR PRODUCING SUCH A DEVICE
RU2006110512A (en) * 2003-09-03 2007-10-20 Дженерал Электрик Компани (US) HEAT-CONDUCTING MATERIAL USING ELECTRONIC NANOPARTICLES
RU2004133862A (en) * 2003-11-21 2006-04-27 Эл Джи Электроникс Инк. (Kr) SYSTEM AND METHOD OF HEAT RADIATION FOR MOBILE COMMUNICATION TERMINAL
RU2291599C2 (en) * 2003-11-21 2007-01-10 Эл Джи Электроникс Инк. System and method for thermo-radiation for mobile communication terminal
MD2556G2 (en) * 2004-06-01 2005-03-31 Ион ТИГИНЯНУ Process for semiconductor nanostructures obtaining
MD20070209A (en) * 2007-07-23 2009-01-31 Технический университет Молдовы Process for obtaining thin films of oxide semiconductors
MD20070296A (en) * 2007-10-31 2009-07-31 Institutul De Inginerie Electronica Si Tehnologii Industriale Al Academiei De Stiinte A Moldovei Method for increasing the microwire magnetic resistance on base of solid heterogeneous materials
MD20080058A (en) * 2008-02-25 2009-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Device for obtaining superconducting layers
MD3934B1 (en) * 2008-09-08 2009-06-30 Institutul De Inginerie Electronica Si Tehnologii Industriale Al Academiei De Stiinte A Moldovei Process for obtaining the substrate of BaF2 with perfect surface

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Chowdhury I., Ravi Prasher R., Lofgreen K., Chrysler G., Narasimhan S., Mahajan R., Koester D., Alley R., Venkatasubramanian R. Pn-chip cooling by superlattice-based thin-film thermoelectrics. Nature Nanotechnology. 2009, Vol. 4, Issure 4, p. 235-238 *

Also Published As

Publication number Publication date
MD249Y (en) 2010-07-30

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KA4Y Short-term patent lapsed due to non-payment of fees (with right of restoration)