MD957G2 - Process and installation for obtaining multilayer epitaxial structures - Google Patents
Process and installation for obtaining multilayer epitaxial structuresInfo
- Publication number
- MD957G2 MD957G2 MD96-0299A MD960299A MD957G2 MD 957 G2 MD957 G2 MD 957G2 MD 960299 A MD960299 A MD 960299A MD 957 G2 MD957 G2 MD 957G2
- Authority
- MD
- Moldova
- Prior art keywords
- obtaining
- growing
- epitaxial
- installation
- epitaxial structures
- Prior art date
Links
Abstract
The invention relates to the semiconductor technique and may be used for semiconductor electronic materials obtaining .The process for obtaining multilayer epitaxial structures, including the successive epitaxial layers growing containing different components in the corresponding gas flow, after each layer growing, the latter one is enveloped by the inactive gas flow till the following layer growing.The installation for obtaining multilayer epitaxial structures includes reactor with chambers for layers growing, connected with the rod, substrates fixation unit, driving mechanism for growing chambers connected with the rod. Substrates fixation unit is realized in the form of shelves and is placed into the tubes, disposed one above another at a distance which doesn't exceed the minimum diffusion length of the used gas.The technical result consists in providing the possibility of obtaining epitaxial multilayer structures having a sharp profile.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MD96-0299A MD957G2 (en) | 1996-09-12 | 1996-09-12 | Process and installation for obtaining multilayer epitaxial structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MD96-0299A MD957G2 (en) | 1996-09-12 | 1996-09-12 | Process and installation for obtaining multilayer epitaxial structures |
Publications (2)
Publication Number | Publication Date |
---|---|
MD957F1 MD957F1 (en) | 1998-04-30 |
MD957G2 true MD957G2 (en) | 1999-02-28 |
Family
ID=19738908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MD96-0299A MD957G2 (en) | 1996-09-12 | 1996-09-12 | Process and installation for obtaining multilayer epitaxial structures |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD957G2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD249Z (en) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for manufacturing a thermoelectric cooler for the Chip substrate |
-
1996
- 1996-09-12 MD MD96-0299A patent/MD957G2/en active IP Right Grant
Non-Patent Citations (4)
Title |
---|
Crystal Properties and Preparation, v. 32-34, 1991, O. S. Gorea, V. V. Zelenin, A. V. Koval, A. V. Simashkevich, GaAs/ GaAsP superlattices grown by the chloride VPE using single flat temperature zone, p. 503-507. * |
Revue Technique Tomson - CCSF, v. 13, nr. 2, 1981, I.F. Hittz et G. Reuchet, Deux metodes originales de croissence epitaxique en phase vapeur de composes GaInAs et GaInAsP. * |
Зеленин, О. С. Горя, Ю. В. Жиляев, Выращивание многослойных периодических структур из газовой фазы на основе GaAs/GaAs1-xPx гетеропереходов, 1990 г., Молд. НИИНТИ, Кишинев, с. 11. * |
Херман, Полупроводниковые сверхрешетки, 1989 г., Мир, М., с. 238. * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MD249Z (en) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for manufacturing a thermoelectric cooler for the Chip substrate |
Also Published As
Publication number | Publication date |
---|---|
MD957F1 (en) | 1998-04-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FG3A | Granted patent for invention | ||
IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20160912 |