MD957G2 - Process and installation for obtaining multilayer epitaxial structures - Google Patents

Process and installation for obtaining multilayer epitaxial structures

Info

Publication number
MD957G2
MD957G2 MD96-0299A MD960299A MD957G2 MD 957 G2 MD957 G2 MD 957G2 MD 960299 A MD960299 A MD 960299A MD 957 G2 MD957 G2 MD 957G2
Authority
MD
Moldova
Prior art keywords
obtaining
growing
epitaxial
installation
epitaxial structures
Prior art date
Application number
MD96-0299A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD957F1 (en
Inventor
Олег ГОРЯ
Victor Zelenin
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MD96-0299A priority Critical patent/MD957G2/en
Publication of MD957F1 publication Critical patent/MD957F1/en
Publication of MD957G2 publication Critical patent/MD957G2/en

Links

Abstract

The invention relates to the semiconductor technique and may be used for semiconductor electronic materials obtaining .The process for obtaining multilayer epitaxial structures, including the successive epitaxial layers growing containing different components in the corresponding gas flow, after each layer growing, the latter one is enveloped by the inactive gas flow till the following layer growing.The installation for obtaining multilayer epitaxial structures includes reactor with chambers for layers growing, connected with the rod, substrates fixation unit, driving mechanism for growing chambers connected with the rod. Substrates fixation unit is realized in the form of shelves and is placed into the tubes, disposed one above another at a distance which doesn't exceed the minimum diffusion length of the used gas.The technical result consists in providing the possibility of obtaining epitaxial multilayer structures having a sharp profile.
MD96-0299A 1996-09-12 1996-09-12 Process and installation for obtaining multilayer epitaxial structures MD957G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD96-0299A MD957G2 (en) 1996-09-12 1996-09-12 Process and installation for obtaining multilayer epitaxial structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD96-0299A MD957G2 (en) 1996-09-12 1996-09-12 Process and installation for obtaining multilayer epitaxial structures

Publications (2)

Publication Number Publication Date
MD957F1 MD957F1 (en) 1998-04-30
MD957G2 true MD957G2 (en) 1999-02-28

Family

ID=19738908

Family Applications (1)

Application Number Title Priority Date Filing Date
MD96-0299A MD957G2 (en) 1996-09-12 1996-09-12 Process and installation for obtaining multilayer epitaxial structures

Country Status (1)

Country Link
MD (1) MD957G2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD249Z (en) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for manufacturing a thermoelectric cooler for the Chip substrate

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Crystal Properties and Preparation, v. 32-34, 1991, O. S. Gorea, V. V. Zelenin, A. V. Koval, A. V. Simashkevich, GaAs/ GaAsP superlattices grown by the chloride VPE using single flat temperature zone, p. 503-507. *
Revue Technique Tomson - CCSF, v. 13, nr. 2, 1981, I.F. Hittz et G. Reuchet, Deux metodes originales de croissence epitaxique en phase vapeur de composes GaInAs et GaInAsP. *
Зеленин, О. С. Горя, Ю. В. Жиляев, Выращивание многослойных периодических структур из газовой фазы на основе GaAs/GaAs1-xPx гетеропереходов, 1990 г., Молд. НИИНТИ, Кишинев, с. 11. *
Херман, Полупроводниковые сверхрешетки, 1989 г., Мир, М., с. 238. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD249Z (en) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Process for manufacturing a thermoelectric cooler for the Chip substrate

Also Published As

Publication number Publication date
MD957F1 (en) 1998-04-30

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Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

Free format text: EXPIRES: 20160912