MD957G2 - Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate - Google Patents
Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificateInfo
- Publication number
- MD957G2 MD957G2 MD96-0299A MD960299A MD957G2 MD 957 G2 MD957 G2 MD 957G2 MD 960299 A MD960299 A MD 960299A MD 957 G2 MD957 G2 MD 957G2
- Authority
- MD
- Moldova
- Prior art keywords
- obtaining
- growing
- epitaxial
- installation
- epitaxial structures
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000009434 installation Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012776 electronic material Substances 0.000 abstract 1
Abstract
Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată pentru obţinerea materialelor electronicii semiconductoare.Procedeul de obţinere a structurilor epitaxiale stratificate include creşterea succesivă a straturilor epitaxiale de diferiţi compuşi în fluxuri de gaze corespunzătoare, după creşterea fiecărui strat suprafaţa de creştere se învăluie cu un flux de gaz inactiv până la creşterea stratului următor.Instalaţia pentru obţinerea structurilor epitaxiale stratificate conţine reactor cu camere de creştere a straturilor epitaxiale legate cu tija, nod de fixare a substraturilor, mecanism de acţionare a camerelor de creştere a straturilor epitaxiale. Nodul de fixare a substraturilor este executat în formă de poliţe plasate în ţevi situate una deasupra alteia la o distanţă ce nu depăşeşte lungimea minimă de difuzie a moleculelor gazului utilizat.Rezultatul tehnic constă în asigurarea posibilităţii de obţinere a structurilor epitaxiale stratificate cu profil abrupt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD96-0299A MD957G2 (ro) | 1996-09-12 | 1996-09-12 | Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD96-0299A MD957G2 (ro) | 1996-09-12 | 1996-09-12 | Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD957F1 MD957F1 (ro) | 1998-04-30 |
| MD957G2 true MD957G2 (ro) | 1999-02-28 |
Family
ID=19738908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MD96-0299A MD957G2 (ro) | 1996-09-12 | 1996-09-12 | Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD957G2 (ro) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD249Z (ro) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat |
-
1996
- 1996-09-12 MD MD96-0299A patent/MD957G2/ro active IP Right Grant
Non-Patent Citations (4)
| Title |
|---|
| Crystal Properties and Preparation, v. 32-34, 1991, O. S. Gorea, V. V. Zelenin, A. V. Koval, A. V. Simashkevich, GaAs/ GaAsP superlattices grown by the chloride VPE using single flat temperature zone, p. 503-507. * |
| Revue Technique Tomson - CCSF, v. 13, nr. 2, 1981, I.F. Hittz et G. Reuchet, Deux metodes originales de croissence epitaxique en phase vapeur de composes GaInAs et GaInAsP. * |
| Зеленин, О. С. Горя, Ю. В. Жиляев, Выращивание многослойных периодических структур из газовой фазы на основе GaAs/GaAs1-xPx гетеропереходов, 1990 г., Молд. НИИНТИ, Кишинев, с. 11. * |
| Херман, Полупроводниковые сверхрешетки, 1989 г., Мир, М., с. 238. * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD249Z (ro) * | 2009-04-29 | 2011-02-28 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat |
Also Published As
| Publication number | Publication date |
|---|---|
| MD957F1 (ro) | 1998-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG3A | Granted patent for invention | ||
| IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20160912 |