MD957G2 - Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate - Google Patents

Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate

Info

Publication number
MD957G2
MD957G2 MD96-0299A MD960299A MD957G2 MD 957 G2 MD957 G2 MD 957G2 MD 960299 A MD960299 A MD 960299A MD 957 G2 MD957 G2 MD 957G2
Authority
MD
Moldova
Prior art keywords
obtaining
growing
epitaxial
installation
epitaxial structures
Prior art date
Application number
MD96-0299A
Other languages
English (en)
Russian (ru)
Other versions
MD957F1 (ro
Inventor
Олег ГОРЯ
Victor Zelenin
Original Assignee
Государственный Университет Молд0
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Государственный Университет Молд0 filed Critical Государственный Университет Молд0
Priority to MD96-0299A priority Critical patent/MD957G2/ro
Publication of MD957F1 publication Critical patent/MD957F1/ro
Publication of MD957G2 publication Critical patent/MD957G2/ro

Links

Abstract

Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată pentru obţinerea materialelor electronicii semiconductoare.Procedeul de obţinere a structurilor epitaxiale stratificate include creşterea succesivă a straturilor epitaxiale de diferiţi compuşi în fluxuri de gaze corespunzătoare, după creşterea fiecărui strat suprafaţa de creştere se învăluie cu un flux de gaz inactiv până la creşterea stratului următor.Instalaţia pentru obţinerea structurilor epitaxiale stratificate conţine reactor cu camere de creştere a straturilor epitaxiale legate cu tija, nod de fixare a substraturilor, mecanism de acţionare a camerelor de creştere a straturilor epitaxiale. Nodul de fixare a substraturilor este executat în formă de poliţe plasate în ţevi situate una deasupra alteia la o distanţă ce nu depăşeşte lungimea minimă de difuzie a moleculelor gazului utilizat.Rezultatul tehnic constă în asigurarea posibilităţii de obţinere a structurilor epitaxiale stratificate cu profil abrupt.
MD96-0299A 1996-09-12 1996-09-12 Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate MD957G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD96-0299A MD957G2 (ro) 1996-09-12 1996-09-12 Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD96-0299A MD957G2 (ro) 1996-09-12 1996-09-12 Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate

Publications (2)

Publication Number Publication Date
MD957F1 MD957F1 (ro) 1998-04-30
MD957G2 true MD957G2 (ro) 1999-02-28

Family

ID=19738908

Family Applications (1)

Application Number Title Priority Date Filing Date
MD96-0299A MD957G2 (ro) 1996-09-12 1996-09-12 Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate

Country Status (1)

Country Link
MD (1) MD957G2 (ro)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD249Z (ro) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Crystal Properties and Preparation, v. 32-34, 1991, O. S. Gorea, V. V. Zelenin, A. V. Koval, A. V. Simashkevich, GaAs/ GaAsP superlattices grown by the chloride VPE using single flat temperature zone, p. 503-507. *
Revue Technique Tomson - CCSF, v. 13, nr. 2, 1981, I.F. Hittz et G. Reuchet, Deux metodes originales de croissence epitaxique en phase vapeur de composes GaInAs et GaInAsP. *
Зеленин, О. С. Горя, Ю. В. Жиляев, Выращивание многослойных периодических структур из газовой фазы на основе GaAs/GaAs1-xPx гетеропереходов, 1990 г., Молд. НИИНТИ, Кишинев, с. 11. *
Херман, Полупроводниковые сверхрешетки, 1989 г., Мир, М., с. 238. *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD249Z (ro) * 2009-04-29 2011-02-28 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat

Also Published As

Publication number Publication date
MD957F1 (ro) 1998-04-30

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Legal Events

Date Code Title Description
FG3A Granted patent for invention
IF99 Valid patent on 19990615

Free format text: EXPIRES: 20160912