MD249Y - Process for manufacturing a thermoelectric cooler for the Chip substrate - Google Patents
Process for manufacturing a thermoelectric cooler for the Chip substrate Download PDFInfo
- Publication number
- MD249Y MD249Y MDS20090070A MDS20090070A MD249Y MD 249 Y MD249 Y MD 249Y MD S20090070 A MDS20090070 A MD S20090070A MD S20090070 A MDS20090070 A MD S20090070A MD 249 Y MD249 Y MD 249Y
- Authority
- MD
- Moldova
- Prior art keywords
- thermoelectric cooler
- substrate
- integrated circuit
- layer
- manufacturing
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Inventia se refera la procedee de fabricare a racitorului termoelectric pentru substratul circuitului integrat si poate fi aplicata in diferite domenii ale microelectronicii, tehnicii de calcul, medicinii si in alte domenii, care necesita indepartarea caldurii. Procedeul de fabricare a racitorului termoelectric pentru substratul circuitului integrat consta in aceea ca substratul circuitului integrat executat din siliciu se trateaza chimic, se recoace la temperatura de 1073K timp de 3(5 min intr-o camera de vid suprainalt. Apoi pe acesta se depune un strat intermediar dublu pe baza de fluoruri la temperatura de 973K, compus dintr-un strat de CaF2 cu grosimea de 2(3 nm si un strat de BaF2 cu grosimea de aproximativ 150 nm, cu o viteza de 0,1 nm/s. Pe stratul intermediar dublu se depune un strat termoelectric de convertizare executat din material semiconductor de tipul A4B6, pe care se amplaseaza un radiator cu ventilator.The invention relates to processes for the manufacture of the thermoelectric cooler for the substrate of the integrated circuit and can be applied in different fields of microelectronics, computing technique, medicine and in other fields, which require the removal of heat. The process of manufacturing the thermoelectric cooler for the substrate of the integrated circuit consists in the fact that the substrate of the integrated circuit made of silicon is chemically treated, annealed at a temperature of 1073K for 3 (5 minutes in a super vacuum chamber). fluorine-based double intermediate layer at 973K, composed of a layer of CaF2 with a thickness of 2 (3 nm and a layer of BaF2 with a thickness of about 150 nm, with a velocity of 0.1 nm / s). the double intermediate layer is deposited a thermoelectric conversion layer made of semiconductor material of type A4B6, on which a radiator with fan is located.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090070A MD249Z (en) | 2009-04-29 | 2009-04-29 | Process for manufacturing a thermoelectric cooler for the Chip substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090070A MD249Z (en) | 2009-04-29 | 2009-04-29 | Process for manufacturing a thermoelectric cooler for the Chip substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD249Y true MD249Y (en) | 2010-07-30 |
| MD249Z MD249Z (en) | 2011-02-28 |
Family
ID=45815089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDS20090070A MD249Z (en) | 2009-04-29 | 2009-04-29 | Process for manufacturing a thermoelectric cooler for the Chip substrate |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD249Z (en) |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0719976B1 (en) * | 1993-09-03 | 1999-12-15 | Kabushiki Kaisha Sekuto Kagaku | Heat insulating board and heat insulating method using same |
| MD627G2 (en) * | 1994-07-25 | 1997-06-30 | Государственный Университет Молд0 | The method of making epitaxy layers of phosphide indium from gaz phase |
| MD957G2 (en) * | 1996-09-12 | 1999-02-28 | Государственный Университет Молд0 | Process and installation for obtaining multilayer epitaxial structures |
| US6197435B1 (en) * | 1997-11-07 | 2001-03-06 | Denki Kagaku Kogyo Kabushiki Kaisha | Substrate |
| GB9814835D0 (en) * | 1998-07-08 | 1998-09-09 | Europ Org For Nuclear Research | A thermal management board |
| JP3690171B2 (en) * | 1999-03-16 | 2005-08-31 | 株式会社日立製作所 | Composite material and its production method and application |
| MD20000111A (en) * | 2000-06-27 | 2002-07-31 | Vieru Stanislav | Device for vacuum cleaving of epitaxial semiconductor structures |
| RU2206502C2 (en) * | 2000-11-21 | 2003-06-20 | Акционерное общество закрытого типа "Карбид" | Composite material |
| JP2006525660A (en) * | 2003-05-01 | 2006-11-09 | クイーン メアリー アンド ウェストフィールド カレッジ | Case-type thermal management element and manufacturing method thereof |
| US7550097B2 (en) * | 2003-09-03 | 2009-06-23 | Momentive Performance Materials, Inc. | Thermal conductive material utilizing electrically conductive nanoparticles |
| KR100652621B1 (en) * | 2003-11-21 | 2006-12-06 | 엘지전자 주식회사 | Heat dissipation device of portable terminal |
| MD2556G2 (en) * | 2004-06-01 | 2005-03-31 | Ион ТИГИНЯНУ | Process for semiconductor nanostructures obtaining |
| MD20070209A (en) * | 2007-07-23 | 2009-01-31 | Технический университет Молдовы | Process for obtaining thin films of oxide semiconductors |
| MD4013G2 (en) * | 2007-10-31 | 2010-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for obtaining an alloy with increased magnetic resistance for the manufacture of microwires |
| MD20080058A (en) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Device for obtaining superconducting layers |
| MD3934C2 (en) * | 2008-09-08 | 2010-01-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Process for obtaining the substrate of BaF2 with perfect surface |
-
2009
- 2009-04-29 MD MDS20090070A patent/MD249Z/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| MD249Z (en) | 2011-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2620983A4 (en) | SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME | |
| EP2377839A4 (en) | METHOD FOR MANUFACTURING SILICON NITRIDE SUBSTRATE, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT SUBSTRATE, AND SEMICONDUCTOR MODULE | |
| JP2009027150A5 (en) | ||
| SG171678A1 (en) | Wafer level package integration and method | |
| EA200970668A1 (en) | METHOD OF APPLICATION OF THIN LAYER AND PRODUCT RECEIVED | |
| EP3588539A4 (en) | SEMICONDUCTOR SUBSTRATE, ELECTRONIC DEVICE, SEMICONDUCTOR SUBSTRATE INSPECTION PROCESS AND ELECTRONIC DEVICE MANUFACTURING PROCESS | |
| SG10201805702QA (en) | Method of forming an integrated circuit and related integrated circuit | |
| WO2012015550A3 (en) | Semiconductor device and structure | |
| CN106660801A (en) | Graphene structure and its preparation method | |
| JP2010166040A5 (en) | ||
| EP2123802A4 (en) | N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR MANUFACTURING THE SAME | |
| WO2010025218A3 (en) | Composite semiconductor substrates for thin-film device layer transfer | |
| JP2010283337A5 (en) | ||
| MY172634A (en) | Semiconductor device and heat dissipation mechanism | |
| EP4190764A4 (en) | JUNCTION BODY, CIRCUIT SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING JUNCTION BODY | |
| EP3879010A4 (en) | SIC SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCTION THEREOF AND DEVICE FOR PRODUCTION THEREOF | |
| EP1972702A4 (en) | METHOD FOR MANUFACTURING ALUMINUM NITRIDE CRYSTAL, ALUMINUM NITRIDE CRYSTAL, ALUMINUM NITRIDE CRYSTAL SUBSTRATE, AND SEMICONDUCTOR DEVICE | |
| MD249Y (en) | Process for manufacturing a thermoelectric cooler for the Chip substrate | |
| EP2135281A4 (en) | THERMAL DISSIPATION IN CHIP SUBSTRATES | |
| EP4155025A4 (en) | SUBSTRATE WAFER MANUFACTURING METHODS AND SUBSTRATE WAFERS | |
| TW200710292A (en) | Semiconductor device and method for manufacturing multilayered substrate for semiconductor device | |
| EP2573803A4 (en) | SILICON NITRIDE LAYER FOR SEMICONDUCTOR ELEMENT AND METHOD AND APPARATUS FOR MANUFACTURING SILICON NITRIDE LAYER | |
| TW200738858A (en) | Metal oxide particles, polishing powder, polishing method of substrate and fabrication method of a semiconductor device | |
| ITMI20091294A1 (en) | SEMICONDUCTOR MODULE AND A PROCEDURE FOR THE PRODUCTION OF AN ELECTRONIC CIRCUIT | |
| EP4207314A4 (en) | SILICON WAFER AND PRODUCTION PROCESS THEREOF, CELL LAYER, CELL STRING AND PHOTOVOLTAIC MODULE |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4Y | Short-term patent lapsed due to non-payment of fees (with right of restoration) |