MD249Y - Procedeu de fabricare a racitorului termoelectric pentru substratul circuitului integrat - Google Patents
Procedeu de fabricare a racitorului termoelectric pentru substratul circuitului integrat Download PDFInfo
- Publication number
- MD249Y MD249Y MDS20090070A MDS20090070A MD249Y MD 249 Y MD249 Y MD 249Y MD S20090070 A MDS20090070 A MD S20090070A MD S20090070 A MDS20090070 A MD S20090070A MD 249 Y MD249 Y MD 249Y
- Authority
- MD
- Moldova
- Prior art keywords
- thermoelectric cooler
- substrate
- integrated circuit
- layer
- manufacturing
- Prior art date
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- Physical Vapour Deposition (AREA)
Abstract
Inventia se refera la procedee de fabricare a racitorului termoelectric pentru substratul circuitului integrat si poate fi aplicata in diferite domenii ale microelectronicii, tehnicii de calcul, medicinii si in alte domenii, care necesita indepartarea caldurii. Procedeul de fabricare a racitorului termoelectric pentru substratul circuitului integrat consta in aceea ca substratul circuitului integrat executat din siliciu se trateaza chimic, se recoace la temperatura de 1073K timp de 3(5 min intr-o camera de vid suprainalt. Apoi pe acesta se depune un strat intermediar dublu pe baza de fluoruri la temperatura de 973K, compus dintr-un strat de CaF2 cu grosimea de 2(3 nm si un strat de BaF2 cu grosimea de aproximativ 150 nm, cu o viteza de 0,1 nm/s. Pe stratul intermediar dublu se depune un strat termoelectric de convertizare executat din material semiconductor de tipul A4B6, pe care se amplaseaza un radiator cu ventilator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090070A MD249Z (ro) | 2009-04-29 | 2009-04-29 | Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDS20090070A MD249Z (ro) | 2009-04-29 | 2009-04-29 | Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD249Y true MD249Y (ro) | 2010-07-30 |
| MD249Z MD249Z (ro) | 2011-02-28 |
Family
ID=45815089
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDS20090070A MD249Z (ro) | 2009-04-29 | 2009-04-29 | Procedeu de fabricare a răcitorului termoelectric pentru substratul circuitului integrat |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD249Z (ro) |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5762131A (en) * | 1993-09-03 | 1998-06-09 | Kabushiki Kaisha Sekuto Kagaku | Heat radiating board and method for cooling by using the same |
| MD627G2 (ro) * | 1994-07-25 | 1997-06-30 | Государственный Университет Молд0 | Procedeu de obţinere a straturilor epitaxiale de fosfură de indiu din fază gazoasă |
| MD957G2 (ro) * | 1996-09-12 | 1999-02-28 | Государственный Университет Молд0 | Procedeu şi instalaţie pentru obţinerea structurilor epitaxiale multestratificate |
| US6197435B1 (en) * | 1997-11-07 | 2001-03-06 | Denki Kagaku Kogyo Kabushiki Kaisha | Substrate |
| GB9814835D0 (en) * | 1998-07-08 | 1998-09-09 | Europ Org For Nuclear Research | A thermal management board |
| JP3690171B2 (ja) * | 1999-03-16 | 2005-08-31 | 株式会社日立製作所 | 複合材料とその製造方法及び用途 |
| MD20000111A (ro) * | 2000-06-27 | 2002-07-31 | Vieru Stanislav | Dispozitiv pentru clivarea în vid a structurilor epitaxiale semiconductoare |
| RU2206502C2 (ru) * | 2000-11-21 | 2003-06-20 | Акционерное общество закрытого типа "Карбид" | Композиционный материал |
| WO2004097934A2 (en) * | 2003-05-01 | 2004-11-11 | Queen Mary & Westfield College | An encased thermal management device and method of making such a device |
| US7550097B2 (en) * | 2003-09-03 | 2009-06-23 | Momentive Performance Materials, Inc. | Thermal conductive material utilizing electrically conductive nanoparticles |
| KR100652621B1 (ko) * | 2003-11-21 | 2006-12-06 | 엘지전자 주식회사 | 휴대용 단말기의 방열장치 |
| MD2556G2 (ro) * | 2004-06-01 | 2005-03-31 | Ион ТИГИНЯНУ | Procedeu de obtinere a nanostructurilor semiconductoare |
| MD20070209A (ro) * | 2007-07-23 | 2009-01-31 | Технический университет Молдовы | Procedeu de obţinere a straturilor subţiri de semiconductori oxidici |
| MD4013G2 (ro) * | 2007-10-31 | 2010-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de obţinere a aliajului cu magnetorezistenţă mărită pentru confecţionarea microfirelor |
| MD20080058A (ro) * | 2008-02-25 | 2009-08-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Dispozitiv de obţinere a peliculelor supraconductoare |
| MD3934C2 (ro) * | 2008-09-08 | 2010-01-31 | Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы | Procedeu de obţinere a substratului de BaF2 cu suprafaţă perfectă |
-
2009
- 2009-04-29 MD MDS20090070A patent/MD249Z/ro not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| MD249Z (ro) | 2011-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| KA4Y | Short-term patent lapsed due to non-payment of fees (with right of restoration) |