NO20052832D0 - Method and Apparatus for Refining a Molten Material - Google Patents

Method and Apparatus for Refining a Molten Material

Info

Publication number
NO20052832D0
NO20052832D0 NO20052832A NO20052832A NO20052832D0 NO 20052832 D0 NO20052832 D0 NO 20052832D0 NO 20052832 A NO20052832 A NO 20052832A NO 20052832 A NO20052832 A NO 20052832A NO 20052832 D0 NO20052832 D0 NO 20052832D0
Authority
NO
Norway
Prior art keywords
refining
molten material
molten
Prior art date
Application number
NO20052832A
Other languages
English (en)
Other versions
NO20052832L (no
NO326797B1 (no
Inventor
Kenneth Friestad
Original Assignee
Elkem Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elkem Materials filed Critical Elkem Materials
Priority to NO20052832A priority Critical patent/NO326797B1/no
Publication of NO20052832D0 publication Critical patent/NO20052832D0/no
Priority to CNA2006800207320A priority patent/CN101194051A/zh
Priority to KR1020077029880A priority patent/KR100984926B1/ko
Priority to PCT/NO2006/000174 priority patent/WO2006132536A1/en
Priority to BRPI0611809-7A priority patent/BRPI0611809B1/pt
Priority to EA200800009A priority patent/EA011381B1/ru
Priority to AU2006255886A priority patent/AU2006255886B2/en
Priority to US11/916,898 priority patent/US8580036B2/en
Priority to EP06733126.4A priority patent/EP1922437B1/en
Priority to UAA200800332A priority patent/UA86168C2/uk
Priority to CN201510342796.3A priority patent/CN105088330A/zh
Priority to ES06733126T priority patent/ES2723750T3/es
Priority to JP2008515642A priority patent/JP5039696B2/ja
Publication of NO20052832L publication Critical patent/NO20052832L/no
Publication of NO326797B1 publication Critical patent/NO326797B1/no
Priority to US12/540,102 priority patent/US20100034723A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/108—Including a solid member other than seed or product contacting the liquid [e.g., crucible, immersed heating element]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
NO20052832A 2005-06-10 2005-06-10 Fremgangsmate og apparat for raffinering av smeltet materiale NO326797B1 (no)

Priority Applications (14)

Application Number Priority Date Filing Date Title
NO20052832A NO326797B1 (no) 2005-06-10 2005-06-10 Fremgangsmate og apparat for raffinering av smeltet materiale
JP2008515642A JP5039696B2 (ja) 2005-06-10 2006-05-10 溶融物質を精錬するための方法及び装置
AU2006255886A AU2006255886B2 (en) 2005-06-10 2006-05-10 Method and apparatus for refining a molten material
EP06733126.4A EP1922437B1 (en) 2005-06-10 2006-05-10 Method and apparatus for refining a molten material
PCT/NO2006/000174 WO2006132536A1 (en) 2005-06-10 2006-05-10 Method and apparatus for refining a molten material
BRPI0611809-7A BRPI0611809B1 (pt) 2005-06-10 2006-05-10 aparelho para refino e solidificação direcional de silício
EA200800009A EA011381B1 (ru) 2005-06-10 2006-05-10 Способ и устройство для очистки расплавленного материала
CNA2006800207320A CN101194051A (zh) 2005-06-10 2006-05-10 用于提炼熔融材料的方法及装置
US11/916,898 US8580036B2 (en) 2005-06-10 2006-05-10 Method and apparatus for refining a molten material
KR1020077029880A KR100984926B1 (ko) 2005-06-10 2006-05-10 용융된 물질을 정제하기 위한 방법 및 장치
UAA200800332A UA86168C2 (uk) 2005-06-10 2006-05-10 Спосіб і пристрій для рафінування розплавленого матеріалу
CN201510342796.3A CN105088330A (zh) 2005-06-10 2006-05-10 用于提炼熔融材料的方法及装置
ES06733126T ES2723750T3 (es) 2005-06-10 2006-05-10 Método y aparato para refinar un material fundido
US12/540,102 US20100034723A1 (en) 2005-06-10 2009-08-12 Method and apparatus for refining a molten material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20052832A NO326797B1 (no) 2005-06-10 2005-06-10 Fremgangsmate og apparat for raffinering av smeltet materiale

Publications (3)

Publication Number Publication Date
NO20052832D0 true NO20052832D0 (no) 2005-06-10
NO20052832L NO20052832L (no) 2006-12-11
NO326797B1 NO326797B1 (no) 2009-02-16

Family

ID=35295069

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20052832A NO326797B1 (no) 2005-06-10 2005-06-10 Fremgangsmate og apparat for raffinering av smeltet materiale

Country Status (12)

Country Link
US (2) US8580036B2 (no)
EP (1) EP1922437B1 (no)
JP (1) JP5039696B2 (no)
KR (1) KR100984926B1 (no)
CN (2) CN105088330A (no)
AU (1) AU2006255886B2 (no)
BR (1) BRPI0611809B1 (no)
EA (1) EA011381B1 (no)
ES (1) ES2723750T3 (no)
NO (1) NO326797B1 (no)
UA (1) UA86168C2 (no)
WO (1) WO2006132536A1 (no)

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EP2116637A3 (en) * 2008-05-07 2012-03-21 Covalent Materials Corporation Crucible for melting silicon and release agent used to the same
US8545624B2 (en) * 2008-06-20 2013-10-01 Varian Semiconductor Equipment Associates, Inc. Method for continuous formation of a purified sheet from a melt
US8242420B2 (en) * 2008-08-31 2012-08-14 Inductotherm Corp. Directional solidification of silicon by electric induction susceptor heating in a controlled environment
JP2012502879A (ja) 2008-09-19 2012-02-02 エムイーエムシー・シンガポール・プライベイト・リミテッド 溶融汚染物およびウェーハ汚染物を低減するための一方向凝固炉
CA2738681A1 (en) * 2008-09-30 2010-04-08 Nikolay Nikolaevich Skaldin Crystallizer
DE102008051492A1 (de) * 2008-10-13 2010-04-15 Pva Tepla Ag Vorrichtung zum Kristallisieren von Nicht-Eisen-Metallen
NO20092797A1 (no) * 2009-07-31 2011-02-01 Nordic Ceramics As Digel
DE112011103958T5 (de) * 2010-11-29 2013-08-29 Ulvac, Inc. Vorrichtungen zum Raffinieren von Silizium und Verfahren zum Raffinieren von Silizium
CN103380481B (zh) * 2010-12-01 2018-04-06 1366科技公司 使用独立介入片由熔化材料制作半导体本体
JP2013253298A (ja) * 2012-06-08 2013-12-19 Ulvac Japan Ltd ターゲットユニットの製造方法及びターゲットユニットの製造装置
TWI532890B (zh) 2012-06-25 2016-05-11 希利柯爾材料股份有限公司 矽之控制定向固化
FR3010716B1 (fr) 2013-09-16 2015-10-09 Commissariat Energie Atomique Substrat pour la solidification de lingot de silicium
BR102013032779A2 (pt) * 2013-12-19 2015-12-08 Cia Ferroligas Minas Gerais Minasligas processo e equipamento para purificação de silício por solidificação direcional
CN106591946A (zh) * 2016-12-20 2017-04-26 大连理工大学 一种逆向离心提高多晶硅定向凝固提纯得率的设备和方法
CN106757336A (zh) * 2016-12-20 2017-05-31 大连理工大学 一种横向提高多晶硅定向凝固提纯得率的设备和方法
CN107881555A (zh) * 2017-10-24 2018-04-06 佛山市三水兴达涂料有限公司 一种半导体材料的加工装置及加工工艺
CN109056063A (zh) * 2018-08-29 2018-12-21 孟静 太阳能电池用多晶硅片的制备方法
CN110106546B (zh) * 2019-05-24 2021-04-27 浙江大学 一种高成品率铸造单晶硅生长方法和热场结构
CN110205672B (zh) * 2019-06-17 2021-06-01 常州常晶科技有限公司 一种类单晶硅晶体生长方法和热场结构
CN112807733A (zh) * 2020-12-29 2021-05-18 华祥（中国）高纤有限公司 一种低熔点聚酯切片的水搅拌结晶设备

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Also Published As

Publication number Publication date
EA011381B1 (ru) 2009-02-27
KR20080015457A (ko) 2008-02-19
EP1922437A4 (en) 2014-10-29
WO2006132536A1 (en) 2006-12-14
NO20052832L (no) 2006-12-11
BRPI0611809B1 (pt) 2020-11-03
AU2006255886B2 (en) 2010-03-25
UA86168C2 (uk) 2009-03-25
US8580036B2 (en) 2013-11-12
NO326797B1 (no) 2009-02-16
EA200800009A1 (ru) 2008-04-28
US20080196209A1 (en) 2008-08-21
AU2006255886A1 (en) 2006-12-14
EP1922437A1 (en) 2008-05-21
CN105088330A (zh) 2015-11-25
US20100034723A1 (en) 2010-02-11
CN101194051A (zh) 2008-06-04
JP2008543565A (ja) 2008-12-04
BRPI0611809A2 (pt) 2008-12-09
KR100984926B1 (ko) 2010-10-01
ES2723750T3 (es) 2019-08-30
JP5039696B2 (ja) 2012-10-03
EP1922437B1 (en) 2019-02-20

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