NL98125C - - Google Patents

Info

Publication number
NL98125C
NL98125C NL98125DA NL98125C NL 98125 C NL98125 C NL 98125C NL 98125D A NL98125D A NL 98125DA NL 98125 C NL98125 C NL 98125C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of NL98125C publication Critical patent/NL98125C/xx

Links

Classifications

    • H10P95/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P10/12—
    • H10W40/10—
    • H10W72/30—
    • H10W72/381—
    • H10W72/884—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12736—Al-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
    • Y10T428/12826—Group VIB metal-base component
    • Y10T428/12833—Alternative to or next to each other
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component
NL98125D 1954-08-26 NL98125C (index.php)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
NL820621X 1954-08-26
US52876255A 1955-08-16 1955-08-16
US718872A US2990502A (en) 1954-08-26 1958-03-03 Method of alloying a rectifying connection to a semi-conductive member, and semi-conductive devices made by said method

Publications (1)

Publication Number Publication Date
NL98125C true NL98125C (index.php) 1900-01-01

Family

ID=32397777

Family Applications (2)

Application Number Title Priority Date Filing Date
NL190331D NL190331A (index.php) 1954-08-26
NL98125D NL98125C (index.php) 1954-08-26

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL190331D NL190331A (index.php) 1954-08-26

Country Status (5)

Country Link
US (1) US2990502A (index.php)
BE (1) BE540780A (index.php)
DE (1) DE1018557B (index.php)
GB (1) GB820621A (index.php)
NL (2) NL98125C (index.php)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1195868B (de) * 1957-01-23 1965-07-01 Siemens Ag Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einkristallinem Halbleiterkoerper
DE1160548B (de) * 1957-12-18 1964-01-02 Siemens Ag Verfahren zum Dotieren von halbleitendem Germanium oder Silizium mit Schwefel
FR1214352A (fr) * 1957-12-23 1960-04-08 Hughes Aircraft Co Dispositif semi-conducteur et procédé pour le fabriquer
NL235742A (index.php) * 1958-02-03 1900-01-01
NL239159A (index.php) * 1958-08-08
US3109225A (en) * 1958-08-29 1963-11-05 Rca Corp Method of mounting a semiconductor device
NL243222A (index.php) * 1958-09-10 1900-01-01
DE1100818B (de) * 1958-09-24 1961-03-02 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium
NL242265A (index.php) * 1958-09-30 1900-01-01
GB907268A (en) * 1958-11-14 1962-10-03 Sarkes Tarzian A method of making a semi-conductor diode
DE1292259B (de) * 1959-02-04 1969-04-10 Telefunken Patent Verfahren zum Herstellen von Transistoren durch Legieren
US3063879A (en) * 1959-02-26 1962-11-13 Westinghouse Electric Corp Configuration for semiconductor devices
DE1233949B (de) * 1959-07-13 1967-02-09 Siemens Ag Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper
NL122782C (index.php) * 1959-08-14 1900-01-01
GB918755A (en) * 1959-09-21 1963-02-20 Ass Elect Ind Semi-conductor devices
NL249694A (index.php) * 1959-12-30
DE1113523B (de) * 1960-02-18 1961-09-07 Siemens Ag Verfahren zur Herstellung eines Anschlusses an einer Halbleiter-anordnung
DE1116827B (de) * 1960-03-11 1961-11-09 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einer Legierungselektrode
NL269346A (index.php) * 1960-09-20
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
DE1191044B (de) * 1960-12-03 1965-04-15 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen, wie Silizium-Flaechengleichrichter, -Transistoren oder Halbleiterstromtore
NL268503A (index.php) * 1960-12-09
DE1130524B (de) * 1961-02-22 1962-05-30 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch Anlegieren von Elektroden und einer Traegerplattenanordnung an einen Halbleiterkoerper und Form zur Durchfuehrung des Verfahrens
DE1228002B (de) * 1961-03-07 1966-11-03 Gerhard Gille Dr Ing Trockengleichrichter
DE1141386B (de) * 1961-04-26 1962-12-20 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1178148B (de) * 1961-06-20 1964-09-17 Siemens Ag Verfahren zur Vorbereitung von elektrischen Halbleiteranordnungen mit einlegierten Elekt-troden fuer das Anbringen von elektrischen An-schlussleitern an diesen Elektroden
DE1213055B (de) * 1961-07-24 1966-03-24 Siemens Ag Halbleiteranordnung mit einem einkristallinen Halbleiterkoerper
DE1240187B (de) * 1961-08-10 1967-05-11 Siemens Ag Verfahren zur Herstellung eines sperrfreien Kontaktes durch Auflegieren von Aluminium
DE1276210B (de) * 1961-08-31 1968-08-29 Siemens Ag Halbleiterbauelement
FR1350402A (fr) * 1962-03-16 1964-01-24 Gen Electric Dispositifs à semiconducteurs et méthodes de fabrication
CH396221A (de) * 1962-03-30 1965-07-31 Bbc Brown Boveri & Cie Halbleiteranordnung
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
DE1188207B (de) * 1962-08-27 1965-03-04 Intermetall Verfahren zum Herstellen eines plattenfoermigen Koerpers von hoher elektrischer Leitfaehigkeit
NL302321A (index.php) * 1963-02-08
US3342646A (en) * 1963-02-19 1967-09-19 Rca Corp Thermoelectric generator including silicon germanium alloy thermoelements
GB1054422A (index.php) * 1963-03-16 1900-01-01
DE1272457B (de) * 1963-07-18 1968-07-11 Philips Patentverwaltung Verfahren zum Herstellen einer Halbleiteranordnung
DE1639578B1 (de) * 1963-12-06 1969-09-04 Telefunken Patent Verfahren zum Herstellen von Halbleiterbauelementen ohne stoerenden Thyristoreffekt
US3375143A (en) * 1964-09-29 1968-03-26 Melpar Inc Method of making tunnel diode
DE1283969B (de) * 1965-02-16 1968-11-28 Itt Ind Gmbh Deutsche Halbleiterbauelement mit elektrisch isolierendem Zwischenkoerper zwischen dem Halbleiterkoerper und einem Gehaeuseteil, sowie Verfahren zu seiner Herstellung
DE1483298B1 (de) * 1965-06-11 1971-01-28 Siemens Ag Elektrische Kontaktanordnung zwischen einem Germanium-Silizium-Halbleiterkoerper und einem Kontaktstueck und Verfahren zur Herstellung derselben
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
JPS5116264B2 (index.php) * 1971-10-01 1976-05-22
JPS5836817B2 (ja) * 1976-05-17 1983-08-11 株式会社東芝 Ｘ線けい光増倍管
US4381214A (en) * 1980-06-26 1983-04-26 The General Electric Company Limited Process for growing crystals

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500302A (index.php) * 1949-11-30
BE527420A (index.php) * 1953-03-20
US2702360A (en) * 1953-04-30 1955-02-15 Rca Corp Semiconductor rectifier

Also Published As

Publication number Publication date
NL190331A (index.php) 1900-01-01
GB820621A (en) 1959-09-23
DE1018557B (de) 1957-10-31
US2990502A (en) 1961-06-27
BE540780A (index.php) 1900-01-01

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