GB907268A - A method of making a semi-conductor diode - Google Patents

A method of making a semi-conductor diode

Info

Publication number
GB907268A
GB907268A GB3854159A GB3854159A GB907268A GB 907268 A GB907268 A GB 907268A GB 3854159 A GB3854159 A GB 3854159A GB 3854159 A GB3854159 A GB 3854159A GB 907268 A GB907268 A GB 907268A
Authority
GB
United Kingdom
Prior art keywords
wafer
semi
conductor
diode
type conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3854159A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sarkes Tarzian Inc
Original Assignee
Sarkes Tarzian Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarkes Tarzian Inc filed Critical Sarkes Tarzian Inc
Publication of GB907268A publication Critical patent/GB907268A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

907,268. Semi-conductor devices. SARKES TARZIAN Inc. Nov. 13, 1959 [Nov. 14, 1958], No. 38541/59. Class 37. In a method of making a semi-conductor diode, a semi-conductor wafer 29 of one type conductivity, interposed between a solder wafer 28 and a wafer 30 including an impurity for producing an opposite type conductivity in the semi-conductor, is placed in a cylindrical recess in a jig 25, the recess having a concave, e.g. conical, bottom surface 27 so that upon melting the solder wafer is alloyed to the semi-conductor wafer in a non-uniform layer of substantial thickness at its centre tapering off to a relatively thin layer at its periphery. As shown, a wafer 29 of N-type conductivity Si is placed between a wafer 28 of pure Sn, or Sn including �% Sb or P, and wafers 30, 31 of pure A1 or Al containing 1% Ga or B, and Sn, respectively, in a graphite jig, a cylindrical weight 32 having a conical bottom surface 33 being placed over wafer 31, and the jig is heated to the alloying temperature of about 900� C. After formation of the PN junction 12, Fig. 1, the diode is heated to a temperature intermediate the alloying temperature and the melting points of the AL-Sn alloy and Sn dots 13, 16 and leads 14, 15 of Ag or Ag- or Au-plated Cu wire and Cu, respectively, are pressed into engagement with the opposite faces of the monocrystalline wafer 11. The diode is completely enclosed in a resilient, gas and liquid impervious member 20 of silicon rubber which is encased in a rigid impervious plastic member 21 of an epoxy resin as described in Divisional Specification 907,269. The epoxy resin contracts during the curing process and compresses the silicon rubber against the diode and leads 14, 15 to provide an hermetic seal. Specifications 855,381 and 894,255 also are referred to.
GB3854159A 1958-11-14 1959-11-13 A method of making a semi-conductor diode Expired GB907268A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77385858A 1958-11-14 1958-11-14

Publications (1)

Publication Number Publication Date
GB907268A true GB907268A (en) 1962-10-03

Family

ID=25099534

Family Applications (2)

Application Number Title Priority Date Filing Date
GB3995761A Expired GB907269A (en) 1958-11-14 1959-11-13 Diode
GB3854159A Expired GB907268A (en) 1958-11-14 1959-11-13 A method of making a semi-conductor diode

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB3995761A Expired GB907269A (en) 1958-11-14 1959-11-13 Diode

Country Status (3)

Country Link
DE (1) DE1167453B (en)
FR (1) FR1240414A (en)
GB (2) GB907269A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3019239A1 (en) * 1980-05-20 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Semiconductor encapsulation with layers of differing hardness layer fo - has semiconductor embedded in second layer of soft material for protection against external effects and degradation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822307A (en) * 1953-04-24 1958-02-04 Sylvania Electric Prod Technique for multiple p-n junctions
NL190331A (en) * 1954-08-26 1900-01-01
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them
GB797304A (en) * 1955-12-19 1958-07-02 Gen Electric Co Ltd Improvements in or relating to the manufacture of semiconductor devices

Also Published As

Publication number Publication date
GB907269A (en) 1962-10-03
FR1240414A (en) 1960-09-02
DE1167453B (en) 1964-04-09

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