GB907269A - Diode - Google Patents

Diode

Info

Publication number
GB907269A
GB907269A GB3995761A GB3995761A GB907269A GB 907269 A GB907269 A GB 907269A GB 3995761 A GB3995761 A GB 3995761A GB 3995761 A GB3995761 A GB 3995761A GB 907269 A GB907269 A GB 907269A
Authority
GB
United Kingdom
Prior art keywords
wafer
leads
junction
nov
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3995761A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sarkes Tarzian Inc
Original Assignee
Sarkes Tarzian Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarkes Tarzian Inc filed Critical Sarkes Tarzian Inc
Publication of GB907269A publication Critical patent/GB907269A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

907,269. Semi-conductor devices. SARKES TARZIAN Inc. Nov. 13, 1959 [Nov. 14, 1958], No. 39957/61. Divided out of 907,268. Class 37. A diode comprises a semi-conductor wafer 11 having a PN junction 12 therein, two leads 14, 15 directly connected to the wafer on opposite sides of the junction, a resilient, gas and liquid impervious member 20 completely enclosing the wafer and adjoining portions of the leads, and a solid plastic material 21 enclosing the resilient member and adjacent portions of the leads. As shown, a PN junction is formed in a silicon monocrystalline wafer of N-type conductivity by alloying an impurity into one face thereof, this face being afterwards connected to lead 14 of silver- or gold-plated copper wire, or of pure silver, and covered with a dot 13 of aluminium and tin. A copper lead 15 is soldered to the N-side of wafer 11 by means of a tin dot 16. The resilient member 20 may be of silicon rubber and the solid material 21 of an epoxy resin which contracts when cured to compress member 20 against wafer 11 and leads 14, 15.
GB3995761A 1958-11-14 1959-11-13 Diode Expired GB907269A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77385858A 1958-11-14 1958-11-14

Publications (1)

Publication Number Publication Date
GB907269A true GB907269A (en) 1962-10-03

Family

ID=25099534

Family Applications (2)

Application Number Title Priority Date Filing Date
GB3995761A Expired GB907269A (en) 1958-11-14 1959-11-13 Diode
GB3854159A Expired GB907268A (en) 1958-11-14 1959-11-13 A method of making a semi-conductor diode

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB3854159A Expired GB907268A (en) 1958-11-14 1959-11-13 A method of making a semi-conductor diode

Country Status (3)

Country Link
DE (1) DE1167453B (en)
FR (1) FR1240414A (en)
GB (2) GB907269A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3019239A1 (en) * 1980-05-20 1981-11-26 SIEMENS AG AAAAA, 1000 Berlin und 8000 München Semiconductor encapsulation with layers of differing hardness layer fo - has semiconductor embedded in second layer of soft material for protection against external effects and degradation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2822307A (en) * 1953-04-24 1958-02-04 Sylvania Electric Prod Technique for multiple p-n junctions
BE540780A (en) * 1954-08-26 1900-01-01
US2801375A (en) * 1955-08-01 1957-07-30 Westinghouse Electric Corp Silicon semiconductor devices and processes for making them
GB797304A (en) * 1955-12-19 1958-07-02 Gen Electric Co Ltd Improvements in or relating to the manufacture of semiconductor devices

Also Published As

Publication number Publication date
GB907268A (en) 1962-10-03
DE1167453B (en) 1964-04-09
FR1240414A (en) 1960-09-02

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