NL6405157A - - Google Patents
Info
- Publication number
- NL6405157A NL6405157A NL6405157A NL6405157A NL6405157A NL 6405157 A NL6405157 A NL 6405157A NL 6405157 A NL6405157 A NL 6405157A NL 6405157 A NL6405157 A NL 6405157A NL 6405157 A NL6405157 A NL 6405157A
- Authority
- NL
- Netherlands
- Prior art keywords
- carrier
- pellet
- lead
- pellets
- segment
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01019—Potassium [K]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01061—Promethium [Pm]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
- Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
- Y10T29/49172—Assembling electrical component directly to terminal or elongated conductor with encapsulating by molding of insulating material
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Wire Bonding (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Bipolar Transistors (AREA)
Abstract
1,040,990. Semi-conductor devices. GENERAL ELECTRIC CO. April 15, 1964 [May 10, 1963], No. 15671/64. Heading H1K. Transistors are manufactured by mounting a plurality of semi-conductor pellets 2, each having a plurality of electrically active regions defining at least one PN junction, at intervals along an elongated metallic carrier 20 by means of an electrically conductive bond (such as a layer of gold solder 22) between the carrier 20 and one active region of each pellet 2, securing lead wires 26, 28 to the remaining active regions of each pellet 2, attaching a segment of the carrier 20 bearing one of the pellets to one lead post 34 of a header assembly 30, attaching the lead wires 26, 28 of this one pellet to other lead posts 32, 36 of the header assembly, and enclosing the pellet, leads, lead posts, and carrier segment in a housing (such as an epoxy resin encapsulant 50, with one flat face 52 as an orientation indicator). As shown, the segment of the carrier 20 bearing the end pellet is secured by a weld 42 to the lead post 34 and is then sheared off from the rest of the carrier at 44, the carrier 20 with pellets and lead wires attached having previously been thermally stabilized at about 300‹ C. for several hours.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US279476A US3235937A (en) | 1963-05-10 | 1963-05-10 | Low cost transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6405157A true NL6405157A (en) | 1964-11-11 |
Family
ID=23069133
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6405157A NL6405157A (en) | 1963-05-10 | 1964-05-08 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3235937A (en) |
DE (1) | DE1255819B (en) |
GB (1) | GB1040990A (en) |
NL (1) | NL6405157A (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3439238A (en) * | 1963-12-16 | 1969-04-15 | Texas Instruments Inc | Semiconductor devices and process for embedding same in plastic |
DE1292755B (en) * | 1964-03-26 | 1969-04-17 | Siemens Ag | Process for the serial socket and housing installation of semiconductor components |
US3346787A (en) * | 1965-04-09 | 1967-10-10 | Gen Electric | High frequency transistor with internal angular posts and divergent, stiff leads to reduce inter-electrode capacitance |
US3474301A (en) * | 1965-04-30 | 1969-10-21 | Hitachi Ltd | Semiconductor devices having insulating protective films and sealed with resinous materials |
US3444441A (en) * | 1965-06-18 | 1969-05-13 | Motorola Inc | Semiconductor devices including lead and plastic housing structure suitable for automated process construction |
US3522490A (en) * | 1965-06-28 | 1970-08-04 | Texas Instruments Inc | Semiconductor package with heat conducting mounting extending from package on side opposite conductor extensions |
US3444614A (en) * | 1966-01-12 | 1969-05-20 | Bendix Corp | Method of manufacturing semiconductor devices |
US3492157A (en) * | 1966-06-20 | 1970-01-27 | Tokyo Shibaura Electric Co | Resin-sealed semiconductor device and manufacturing method for the same |
GB1196452A (en) * | 1967-01-19 | 1970-06-24 | Lucas Industries Ltd | Semiconductor Circuits |
US3465210A (en) * | 1967-05-23 | 1969-09-02 | Rca Corp | Housing and lead assembly for high-frequency semiconductor devices |
US3737983A (en) * | 1969-06-30 | 1973-06-12 | Texas Instruments Inc | Automated method and system for fabricating semiconductor devices |
US3982317A (en) * | 1975-07-31 | 1976-09-28 | Sprague Electric Company | Method for continuous assembly and batch molding of transistor packages |
JPH0760880B2 (en) * | 1988-02-20 | 1995-06-28 | ドイチエ・アイティーティー・インダストリーズ・ゲゼルシャフト・ミト・ベシュレンクタ・ハフツンク | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, DEVICE FOR PERFORMING THE METHOD, AND ASSEMBLY DEVICE |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2758261A (en) * | 1952-06-02 | 1956-08-07 | Rca Corp | Protection of semiconductor devices |
BE553205A (en) * | 1955-03-10 | |||
US2888736A (en) * | 1955-03-31 | 1959-06-02 | Raytheon Mfg Co | Transistor packages |
US2948951A (en) * | 1957-11-19 | 1960-08-16 | Edwin F Dillaby | Formation of point contact transistors |
NL121500C (en) * | 1958-09-02 | |||
US2982002A (en) * | 1959-03-06 | 1961-05-02 | Shockley William | Fabrication of semiconductor elements |
NL260906A (en) * | 1960-02-12 | |||
US3123750A (en) * | 1961-10-31 | 1964-03-03 | Multiple junction semiconductor device |
-
1963
- 1963-05-10 US US279476A patent/US3235937A/en not_active Expired - Lifetime
-
1964
- 1964-04-15 GB GB15671/64A patent/GB1040990A/en not_active Expired
- 1964-05-02 DE DEG40506A patent/DE1255819B/en active Pending
- 1964-05-08 NL NL6405157A patent/NL6405157A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3235937A (en) | 1966-02-22 |
DE1255819B (en) | 1967-12-07 |
GB1040990A (en) | 1966-09-01 |
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