GB918755A - Semi-conductor devices - Google Patents

Semi-conductor devices

Info

Publication number
GB918755A
GB918755A GB32092/59A GB3209259A GB918755A GB 918755 A GB918755 A GB 918755A GB 32092/59 A GB32092/59 A GB 32092/59A GB 3209259 A GB3209259 A GB 3209259A GB 918755 A GB918755 A GB 918755A
Authority
GB
United Kingdom
Prior art keywords
base
wafer
semi
conductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32092/59A
Inventor
William Joseph Scott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Associated Electrical Industries Ltd
Original Assignee
Associated Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Associated Electrical Industries Ltd filed Critical Associated Electrical Industries Ltd
Priority to GB32092/59A priority Critical patent/GB918755A/en
Priority to DEA35603A priority patent/DE1153459B/en
Publication of GB918755A publication Critical patent/GB918755A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

918,755. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Sept. 9, 1960 [Sept. 21, 1959], No. 32092/59. Class 37. In a semi-conductor device, such as one comprising a point or junction rectifying contact, a semi-conductor wafer is ohmically secured to a base made of like semi-conductor material by means of a thin layer of metal or alloy extending on the base beyond the periphery of the wafer, and having a terminal member in ohmic contact therewith. In an embodiment, a Si wafer is secured to a relatively more massive base of Si by means of a thin layer of Au deposited from vapour, or by melting in vacuo or an inert atmosphere, on the base, to cover an area greater than that of the wafer. The wafer, which may also be Au-coated, is brazed to the base, and is subsequently ground and/or chemically etched to the desired thickness, or to a wedge-shaped cross-section. The base may be fixed to a carrier body of metal. The layer of Au &c. may extend round the edge of the base and on to the surface of the base remote from the wafer, and may be used to braze the base to the carrier body, the terminal member being connected to the Au &c. layer on the edge of the base.
GB32092/59A 1959-09-21 1959-09-21 Semi-conductor devices Expired GB918755A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB32092/59A GB918755A (en) 1959-09-21 1959-09-21 Semi-conductor devices
DEA35603A DE1153459B (en) 1959-09-21 1960-09-20 Semiconductor arrangement with a semiconductor wafer attached to a carrier plate via a non-rectifying contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB32092/59A GB918755A (en) 1959-09-21 1959-09-21 Semi-conductor devices

Publications (1)

Publication Number Publication Date
GB918755A true GB918755A (en) 1963-02-20

Family

ID=10333104

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32092/59A Expired GB918755A (en) 1959-09-21 1959-09-21 Semi-conductor devices

Country Status (2)

Country Link
DE (1) DE1153459B (en)
GB (1) GB918755A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL190331A (en) * 1954-08-26 1900-01-01

Also Published As

Publication number Publication date
DE1153459B (en) 1963-08-29

Similar Documents

Publication Publication Date Title
GB958241A (en) Semi-conductor structure fabrication
GB937438A (en) Method of applying contacts to a semiconductor body
GB906524A (en) Semiconductor switching devices
GB836370A (en) Improvements in high current rectifier
GB1004020A (en) Improvements in or relating to the mounting of electrical components
GB1100708A (en) Semiconductor signal translating devices
GB970895A (en) Semi-conductor arrangements enclosed in housings
GB848619A (en) Improvements in or relating to the fabrication of semiconductor rectifiers
GB1083172A (en) Semiconductive devices and methods of making them
GB1002725A (en) Semiconductor device
GB918755A (en) Semi-conductor devices
GB1018811A (en) A semi-conductor device
GB979465A (en) A semi-conductor device
GB919947A (en) Semiconductor device
GB755691A (en) Method of soldering electrodes to semiconductor elements
GB1076654A (en) Improvements in and relating to methods of applying ohmic contacts to silicon
GB835851A (en) Semiconductive translating devices and methods
GB1020151A (en) Electrical semiconductor device
GB1215088A (en) Process for affixing thin film electrical contacts to a semiconductor body comprising silicon carbide
GB895652A (en) Improvements in or relating to semiconductor valves
GB910979A (en) A semiconductor device
GB940277A (en) Improvements in semiconductor devices
GB930352A (en) Improvements in or relating to semi-conductor arrangements
GB1266154A (en)
GB910486A (en) A semi-conductor device