GB940277A - Improvements in semiconductor devices - Google Patents

Improvements in semiconductor devices

Info

Publication number
GB940277A
GB940277A GB2938660A GB2938660A GB940277A GB 940277 A GB940277 A GB 940277A GB 2938660 A GB2938660 A GB 2938660A GB 2938660 A GB2938660 A GB 2938660A GB 940277 A GB940277 A GB 940277A
Authority
GB
United Kingdom
Prior art keywords
layer
junction
semi
crystal
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2938660A
Inventor
Justice Neale Carman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CARMAN LAB Inc
Original Assignee
CARMAN LAB Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CARMAN LAB Inc filed Critical CARMAN LAB Inc
Priority to GB2938660A priority Critical patent/GB940277A/en
Publication of GB940277A publication Critical patent/GB940277A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semi-conductor device comprising a body with a PN junction, has metallic leads bonded to the surface of the body by a metallic bonding layer with a melting point of above 700 DEG C. and a non-conducting glass envelope with a fusing temperature above that of the bonding layer enclosing the edge of the PN junction. Fig. 1 shows a diode comprising a semi-conductor crystal 10 with a longitudinal PN junction, secured between two lead or terminal members <PICT:0940277/C3/1> <PICT:0940277/C3/2> each comprising a core 14 of W, Mo, or an Fe-Ni-Co alloy with a coating 15 of Rh, Pt, Pd, Ir, Os, Au, Ag or alloys thereof. This coating may be applied by evaporation deposition or spattering, or electroplating and sintering to close the pores; a Co or Ni coating may be applied first. The coated terminal is bonded to the crystal by a layer 18 of Ag, Pt, Pd or alloys thereof fusing above 700 DEG C. Examples of such alloys are 5-15% Au+ 95-85% Ag or Ag with 5 to 25% Pt or Pd; bonding is effected by pressure and heating in nitrogen, argon or helium to 900 DEG to 1050 DEG C., the material being provided in the form of a disc, fine powder or plating. Alternatively layer 15 may also function as the bonding material which may contain 1-5% of donor or accepted material. After welding, the edge of the crystal is etched, layer 15 protecting the terminals. A glass envelope or layer 19 is then provided about the edge of the crystal and bonded to the terminals. If desired an oxide coating may be provided on the semi-conductor before the glass is applied by heating in nitrogen and water vapour. Fig. 4 shows a similar arrangement applied to a PNP transistor. In this case, an annular emitter electrode 43 is provided on the additional P-layer, the central base electrode 45 being applied to the middle N-layer and the space between emitter and base terminals being filled with glass. In a further transistor embodiment, the base is provided by an annular electrode surrounding the emitter electrode which also comprises a built in section of semi-conductor which being connected in series with the emitter, acts as a temperature variable resistor to compensate changes in the wafer characteristics. A photo-sensitive diode device comprising a PN junction with an annular electrode on one face and a protective glass window is also described.
GB2938660A 1960-08-25 1960-08-25 Improvements in semiconductor devices Expired GB940277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2938660A GB940277A (en) 1960-08-25 1960-08-25 Improvements in semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2938660A GB940277A (en) 1960-08-25 1960-08-25 Improvements in semiconductor devices

Publications (1)

Publication Number Publication Date
GB940277A true GB940277A (en) 1963-10-30

Family

ID=10290743

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2938660A Expired GB940277A (en) 1960-08-25 1960-08-25 Improvements in semiconductor devices

Country Status (1)

Country Link
GB (1) GB940277A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1274736B (en) * 1964-12-03 1974-02-07 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
FR2423866A1 (en) * 1978-04-18 1979-11-16 Westinghouse Electric Corp DIODE ENCAPSULATED IN GLASS
EP0013815A1 (en) * 1978-12-15 1980-08-06 Westinghouse Electric Corporation Glass-sealed multichip process
WO1985004523A1 (en) * 1984-03-26 1985-10-10 Advanced Micro Devices, Inc. Conductive, protective layer for multilayer metallization
US4590672A (en) * 1981-07-24 1986-05-27 Fujitsu Limited Package for electronic device and method for producing same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1274736B (en) * 1964-12-03 1974-02-07 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
DE1274736C2 (en) * 1964-12-03 1974-02-07 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
FR2423866A1 (en) * 1978-04-18 1979-11-16 Westinghouse Electric Corp DIODE ENCAPSULATED IN GLASS
EP0013815A1 (en) * 1978-12-15 1980-08-06 Westinghouse Electric Corporation Glass-sealed multichip process
US4590672A (en) * 1981-07-24 1986-05-27 Fujitsu Limited Package for electronic device and method for producing same
WO1985004523A1 (en) * 1984-03-26 1985-10-10 Advanced Micro Devices, Inc. Conductive, protective layer for multilayer metallization

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