GB1266154A - - Google Patents
Info
- Publication number
- GB1266154A GB1266154A GB3152568A GB1266154DA GB1266154A GB 1266154 A GB1266154 A GB 1266154A GB 3152568 A GB3152568 A GB 3152568A GB 1266154D A GB1266154D A GB 1266154DA GB 1266154 A GB1266154 A GB 1266154A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- contact areas
- gaas
- interconnected
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
1,266,154. Semi-conductor devices. PLESSEY CO. Ltd. 24 June, 1969 [2 July, 1968], No. 31525/68. Heading H1K. A GaAs Gunn-effect device comprises an N- type GaAs layer 2 on a highly conductive substrate 1, e.g. itself of GaAs, and the upper surface of the layer 2 carries a number of interconnected contact areas 4. The provision of the interconnected areas 4 results in improved power output and heat dissipation. As shown the substrate 1 is mounted on a metallic header 3 and the contact areas 4 are interconnected by wires 5, 6 and a metal ring 7. Alternatively the contact areas may be defined by apertures through a coating of silicon oxide or nitride overlying the layer 2, over which coating a continuous metal layer is applied. The layer 2 may be epitaxial, and may be separated from the substrate 1 by a further highly conductive epitaxial GaAs layer. The contact areas 4 may be of Ag/Sn.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3152568 | 1968-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1266154A true GB1266154A (en) | 1972-03-08 |
Family
ID=10324398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3152568A Expired GB1266154A (en) | 1968-07-02 | 1968-07-02 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1266154A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4134122A (en) * | 1974-11-29 | 1979-01-09 | Thomson-Csf | Hyperfrequency device with gunn effect |
| FR2515866A1 (en) * | 1981-10-30 | 1983-05-06 | Thomson Csf | ELECTRON TRANSFER DEVICE OPERATING THE FIELD OF HYPERFREQUENCIES |
-
1968
- 1968-07-02 GB GB3152568A patent/GB1266154A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4134122A (en) * | 1974-11-29 | 1979-01-09 | Thomson-Csf | Hyperfrequency device with gunn effect |
| FR2515866A1 (en) * | 1981-10-30 | 1983-05-06 | Thomson Csf | ELECTRON TRANSFER DEVICE OPERATING THE FIELD OF HYPERFREQUENCIES |
| EP0078726A1 (en) * | 1981-10-30 | 1983-05-11 | Thomson-Csf | Transferred electron device operating in the microwave domain |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |