GB1110654A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1110654A
GB1110654A GB5476465A GB5476465A GB1110654A GB 1110654 A GB1110654 A GB 1110654A GB 5476465 A GB5476465 A GB 5476465A GB 5476465 A GB5476465 A GB 5476465A GB 1110654 A GB1110654 A GB 1110654A
Authority
GB
United Kingdom
Prior art keywords
etched
layer
region
base region
give
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5476465A
Inventor
Peter John Abbey
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB5476465A priority Critical patent/GB1110654A/en
Priority to FR88420A priority patent/FR1505934A/en
Priority to DE1966D0051849 priority patent/DE1299075B/en
Priority to NL6618062A priority patent/NL6618062A/xx
Priority to ES0334878A priority patent/ES334878A1/en
Publication of GB1110654A publication Critical patent/GB1110654A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,110,654. Planar semiconductor devices. STANDARD TELEPHONES & CABLES Ltd. 22 Dec., 1966 [24 Dec., 1965], No. 54764/ 65. Heading H1K. In a planar semi-conductor device a metallic layer including an impurity of one conductivity type is alloyed to form a junction surrounding a rectifying junction in a semi-conductor body of the one conductivity type. An aperture is etched in a SiO 2 layer 1 on a p-type Ge body 2 and Sb diffused in to give a base region 4. Further apertures are etched in layer 1 to give a rectangular frame surrounding the base region and a layer of A1 evaporated over the body which is then masked and etched to leave Al in the frame and a rectangular region on the base region. The Al is alloyed to give an emitter region 6 and a ring junction 5. A layer of glass 8 is then deposited on the device and etched to expose the base region. A coating of Ag-Au-Sb is applied, masked and etched to leave base contact 11. The emitter region 6 is then exposed and the slice baked in vacuo at 350‹ C. An Al layer is evaporated on to the slide at 200‹ C. and the excess of Al etched away to leave contacts 9 and 10. A plurality of devices may be formed in one slice and subsequently divided.
GB5476465A 1965-12-24 1965-12-24 Semiconductor devices Expired GB1110654A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB5476465A GB1110654A (en) 1965-12-24 1965-12-24 Semiconductor devices
FR88420A FR1505934A (en) 1965-12-24 1966-12-22 Semiconductor device
DE1966D0051849 DE1299075B (en) 1965-12-24 1966-12-22 Method for manufacturing a planar transistor
NL6618062A NL6618062A (en) 1965-12-24 1966-12-23
ES0334878A ES334878A1 (en) 1965-12-24 1966-12-23 Method of manufacturing semiconductor devices. (Machine-translation by Google Translate, not legally binding)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5476465A GB1110654A (en) 1965-12-24 1965-12-24 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB1110654A true GB1110654A (en) 1968-04-24

Family

ID=10472007

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5476465A Expired GB1110654A (en) 1965-12-24 1965-12-24 Semiconductor devices

Country Status (5)

Country Link
DE (1) DE1299075B (en)
ES (1) ES334878A1 (en)
FR (1) FR1505934A (en)
GB (1) GB1110654A (en)
NL (1) NL6618062A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2837704A (en) * 1954-12-02 1958-06-03 Junction transistors
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure

Also Published As

Publication number Publication date
DE1299075B (en) 1969-07-10
FR1505934A (en) 1967-12-15
NL6618062A (en) 1967-06-26
ES334878A1 (en) 1967-11-01

Similar Documents

Publication Publication Date Title
US3025589A (en) Method of manufacturing semiconductor devices
GB1161049A (en) Field-effect semiconductor devices.
GB1229776A (en)
JPS4820951B1 (en)
SE316221B (en)
GB1084937A (en) Transistors
GB1088775A (en) Semiconductor controlled rectifier
GB949646A (en) Improvements in or relating to semiconductor devices
GB1234294A (en)
GB1480116A (en) Triacs
GB998388A (en) Improvements in or relating to semiconductor junction devices
GB1340306A (en) Manufacture of semiconductor devices
GB1088637A (en) Four layer semiconductor switching devices having a shorted emitter
GB1303235A (en)
GB969592A (en) A semi-conductor device
GB1080560A (en) Semiconductor diode device
GB1110654A (en) Semiconductor devices
GB954534A (en) Electrode contact structures and method of providing the same
GB1162487A (en) Integrated Circuit Planar Transistor.
GB1268406A (en) Improvements in and relating to pressure sensitive semiconductor devices and method of manufacturing the same
GB1228819A (en)
GB1063210A (en) Method of producing semiconductor devices
GB1189355A (en) Improvements in and relating to Semiconductor Devices
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1216618A (en) Aluminium-alloy junction devices using silicon nitride as a mask