NL8901401A - Fotogevoelige halfgeleiderinrichting. - Google Patents

Fotogevoelige halfgeleiderinrichting. Download PDF

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Publication number
NL8901401A
NL8901401A NL8901401A NL8901401A NL8901401A NL 8901401 A NL8901401 A NL 8901401A NL 8901401 A NL8901401 A NL 8901401A NL 8901401 A NL8901401 A NL 8901401A NL 8901401 A NL8901401 A NL 8901401A
Authority
NL
Netherlands
Prior art keywords
radiation
sensitive
transistors
semiconductor device
photodiodes
Prior art date
Application number
NL8901401A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL8901401A priority Critical patent/NL8901401A/nl
Priority to US07/525,284 priority patent/US5099126A/en
Priority to DE69010994T priority patent/DE69010994T2/de
Priority to EP90201368A priority patent/EP0400754B1/de
Priority to CN90104034A priority patent/CN1021677C/zh
Priority to KR1019900007928A priority patent/KR100225186B1/ko
Priority to JP14010990A priority patent/JP3165689B2/ja
Publication of NL8901401A publication Critical patent/NL8901401A/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Optical Head (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
NL8901401A 1989-06-02 1989-06-02 Fotogevoelige halfgeleiderinrichting. NL8901401A (nl)

Priority Applications (7)

Application Number Priority Date Filing Date Title
NL8901401A NL8901401A (nl) 1989-06-02 1989-06-02 Fotogevoelige halfgeleiderinrichting.
US07/525,284 US5099126A (en) 1989-06-02 1990-05-17 Photosensitive semiconductor device having radiation sensitive diodes and photocurrent amplification
DE69010994T DE69010994T2 (de) 1989-06-02 1990-05-29 Lichtempfindliche Halbleiteranordnung.
EP90201368A EP0400754B1 (de) 1989-06-02 1990-05-29 Lichtempfindliche Halbleiteranordnung
CN90104034A CN1021677C (zh) 1989-06-02 1990-05-30 光敏半导体器件
KR1019900007928A KR100225186B1 (ko) 1989-06-02 1990-05-31 광감지반도체장치
JP14010990A JP3165689B2 (ja) 1989-06-02 1990-05-31 光感応半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8901401 1989-06-02
NL8901401A NL8901401A (nl) 1989-06-02 1989-06-02 Fotogevoelige halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
NL8901401A true NL8901401A (nl) 1991-01-02

Family

ID=19854767

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8901401A NL8901401A (nl) 1989-06-02 1989-06-02 Fotogevoelige halfgeleiderinrichting.

Country Status (7)

Country Link
US (1) US5099126A (de)
EP (1) EP0400754B1 (de)
JP (1) JP3165689B2 (de)
KR (1) KR100225186B1 (de)
CN (1) CN1021677C (de)
DE (1) DE69010994T2 (de)
NL (1) NL8901401A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471350A (en) * 1990-03-20 1995-11-28 U.S. Philips Corporation Record carrier with alternating frames and interframe gaps

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2878376B2 (ja) * 1990-02-28 1999-04-05 キヤノン株式会社 光電変換装置
JPH04137232A (ja) * 1990-09-27 1992-05-12 Sharp Corp 光ピックアップ装置
SE470116B (sv) * 1992-04-03 1993-11-08 Asea Brown Boveri Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets
DE4413481C2 (de) * 1994-04-19 1999-12-16 Vishay Semiconductor Gmbh Optoelektronisches Bauelement
KR100348700B1 (ko) * 2000-09-16 2002-08-13 서울대학교 공과대학 교육연구재단 광소자 및 그 제조방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3729660A (en) * 1970-11-16 1973-04-24 Nova Devices Inc Ic device arranged to minimize thermal feedback effects
JPS5372488A (en) * 1976-12-08 1978-06-27 Nec Corp Photo semiconductor device
US4314858A (en) * 1979-11-23 1982-02-09 Rockwell International Corporation Method of making a fully integrated monolithic optical receiver
US4433920A (en) * 1980-07-08 1984-02-28 Citizen Watch Company Limited Electronic timepiece having improved primary frequency divider response characteristics
JPS58131765A (ja) * 1982-01-29 1983-08-05 Fuji Xerox Co Ltd 原稿読取装置
JPH0633537Y2 (ja) * 1984-06-30 1994-08-31 ソニ−株式会社 感光性半導体装置
DE3679648D1 (de) * 1985-12-10 1991-07-11 Nec Corp Optischer kopf mit einem beugungsgitter zum richten von zwei oder mehreren gebeugten lichtstrahlen auf optische detektoren.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471350A (en) * 1990-03-20 1995-11-28 U.S. Philips Corporation Record carrier with alternating frames and interframe gaps

Also Published As

Publication number Publication date
KR100225186B1 (ko) 1999-10-15
EP0400754B1 (de) 1994-07-27
JP3165689B2 (ja) 2001-05-14
US5099126A (en) 1992-03-24
JPH0329376A (ja) 1991-02-07
KR910002015A (ko) 1991-01-31
EP0400754A1 (de) 1990-12-05
CN1021677C (zh) 1993-07-21
CN1047759A (zh) 1990-12-12
DE69010994T2 (de) 1995-02-16
DE69010994D1 (de) 1994-09-01

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BV The patent application has lapsed