CN1047759A - 光敏半导体器件 - Google Patents
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Abstract
一种对辐射敏感的半导体器件,特别是一种确定发光点位置的光电探测器。该器件包括一具有至少两个对辐射敏感的二极管的半导体本体和放大由发光点产生的光电流的装置。该装置配有在半导体本体为对辐射敏感的二极管占据的部位外的晶体管。各晶体管供一对辐射敏感的二极管专用且连接到该二极管上,同时至少各晶体管起作用的部分彼此在半导体本体中配置得比它们专用的二极管密。本发明还涉及包括这种半导体光电探测器的聚焦设备。
Description
本发明涉及一种对辐射敏感的半导体器件,该器件有一半导体本体,该半导体本体含有至少两个对辐射敏感的二极管,在二极管上可使发光点成象,该器件还具有增强该发光点所产生的光电流用的装置。
本发明还涉及一种含有这种光敏器件的聚焦设备。
西德公开专利DE-A3706252即介绍了上述那种光敏半导体器件。
这类器件曾在许多领域中以不同的方式使用过。更具体地说,它们是用在读取和记录光信息的领域中,例如用在DOR(光学直接记录)、VLP(密纹电视唱片)和CD(激光唱片)设备上,还用以检测信息载体媒质(这里指的是DOR、VLP或CD片)在径向和轴向上的偏移。
在这类的一个用途中,对辐射敏感的半导体器件是用作例如傅科聚焦系统的部件,特别是如“菲利浦技术评论“1981/1982年第40卷,第9期,第266-272页上所介绍的那样。在这种情况下,聚焦在CD或电视录象片上并为该片所反射的激光射束为半透明的镜面所偏转,并由若干楔形棱镜分成两个射束,在半导体圆片上各射束在光电探测器的两个彼此为一狭条所隔开的光电二极管上成象为发光点。
借助于一电路可从两光电二极管的信号差获得循迹误差信号,用该信号作为控制信号来稳定经聚焦的激光束相对于唱片的位置。同时,从各光电二极管所产生的信号还可以得出第二循迹误差信号,该信号把光学系统的任何老化或污染情况都已考虑进去。在“菲利浦技术评论”的篇文章中,对这方面都作了广泛的说明,因此,更详细的情况可参看该期刊。
由于电视录象片上的信息呈尺寸小于1微米或以下的凹坑,这种器件一定要能够适应所检测的发光强度中高频的各种变化。此外,所产生的光电流一定要有足够高的信噪比,因此一定不能太弱。
一般说来,光电二极管的反应是足够快的,但二极管所提供的光电流在多数情况下却太小了,因而必须借助于上述(开关)装置进行放大。
该装置可以简单的方式由一些晶体管构成。为此可在光电二极管中另设发射极区,使光电二极管变成光电晶体管,由该晶体管提供经放大的信号,这种信号就具有所要求的信噪比。
这种解决办法有一个很大的缺点,即各晶体管就要按较大的相对间距配置。结果,由于半导体材料不可避免地有不均匀的情况,因此,要在有关的容差内使晶体管的性能一样是有困难的。
本发明的主要目的是消除上述缺点,或至少大幅度减小这些缺点。
根据本发明,本说明书开端所述的那种对辐射敏感的半导体器件具有这样的特点,所述装置包括一些晶体管,它们配置在半导体本体中为光电二极管所占据的部位外面,各晶体管是供某一对辐射敏感的二极管专用的,并连接到该二极管上,而且至少各晶体管起作用的各部分在半导体本体中彼此配置得比它们专用的对辐射敏感的二极管密。各晶体管最好配置得彼此之间尽可能接近。这里“配置得彼此尽可能接近”应理解为:各晶体管起作用的各部分密集在尽可能小的表面上,这是考虑到确定尺寸时应保持的容差而这样做的。
还应该指出的是,在这种应用中,“光”一词还包括红外和紫外为眼睛看不到的电磁辐射。
各晶体管密集在尽可能小的表面上时,晶体管性能因材料不均匀性所引起的差异,不管对辐射敏感的各二极管之间的间距有多大,都会减小到最低程度。
虽然在对辐射敏感的诸二极管外面设置一些晶体管会要求较大的表面积,但这个额外的表面积在本发明的器件中是如此之小以致实质上不致形成缺点。
根据第一最佳实施例,对辐射敏感的诸二极管成行配置,各晶体管则实质上平行于二极管的各行成行配置。
在经常用于聚焦设备的一个重要最佳实施例具有这样的特点:该器件包括四个在各象限中配置的光电二极管和四个晶体管。
本发明还涉及一种聚焦设备,该聚焦设备包括:光线投射装置,用以将光束投射到一表面上;偏转装置,供偏转部分光束之用;分束装置,用以将折射光束分成至少两个光束;该两光束往光电探测器上投射发光点,光电探测器则产生稳定该光束相对于该表面的位置的信号,所述聚焦设备的特征在于,光电探测器采用本发明的上述那种半导体器件。
现在参照一实施例和附图更全面地说明本发明的内容。附图中:
图1是本发明光敏半导体器件的平面示意图;
图2是沿图1Ⅱ-Ⅱ线截取的剖面示意图;
图3是本发明的聚焦设备示意图。
各图都是示意性质的,没有按比例画出,相应的各部分一般则编以同样的编号。
图1是本发明光敏半导体器件的平面示意图。图2是沿图1Ⅱ-Ⅱ线截取的剖面示意图。
本发明的器件包括半导体本体1,大多数由硅制成,但在某些情况下也采用其它半导体材料。半导体本体,在本实施中是一个硅圆片,它具有高度掺杂的n+衬底2和掺杂得较轻且配置在衬底2上的n-外延层3,该圆片包括至少两个,在本实施例中为四个光电二极管4至7,在光电二极管4至7上可使发光点成象。各光电二极管有一个P型区,例如图2中的区6,该区与邻接的n型半导体材料形成pn结。在本实施例中,投射有两个源自傅科聚焦设备的发光点8和9,即发光点8投射到二极管4和5上,发光点9投射到二极管6和7上。半导体器件还包括放大装置,用以放大一个或几个发光点产生的光电流。借助于另一个电路(图中未示出),这个电路在必要时可以全部或部分地结合在半导体本体1上,就可以如“菲利浦技术评论”的上述文章中所述的那样,通过分析源自二极管4、5、6和7的信噪比,而获得循迹误差信号。
根据本发明,所述光电流放大装置包括设在半导体本体为光电二极管4至7所占据的部位外面的晶体管14、15、16和17,各晶体管供一光电二极管专用且连接到该光电二极管上,晶体管14至17起作用的各部分则在半导体本体中彼此配置得比二极管4、5、6、7更密集。在本实施例中,晶体管14、15、16、17都彼此配置得尽可能密集。
晶体管14至17系配置在构成公共集电极区的公共n型岛18上,使其与各光电二极管分开,其各基极区19的相对间距在本实施例中为10微米。因此,各晶体管起作用的部分,也就是说为它们的基极区所占据的表面积,集中在硅圆片极小因而实质上浆液的区域中。这样,由于它们的尺寸相等,因而它们的电气性能实质上相同,同时它们所占据的额外表面积是很小的。
各晶体管14、15、16、17的基区19借助于金属线路20连接到4至7其中一个光电二极管上;图1中,金属线路用虚线表示,接触窗口则用对角线表示。光电二极管的P型区6用例如扩散法或离子注入法形成。晶体管的n型发射区21通过金属线路连接到接触表面14A至17A,控制所需的其它外围设备即可连接到接触表面14A至17A上。电路的这些额外部分必要时也可设在半导体圆片1内。衬底经由接触窗口22加到一参考电位上,在此情况下,该参考电位为最高的供电电压。
在图1和2的实施例中,光电二极管4至7成行配置,晶体管14至17则实质上平行于光电二极管4至7各行成行配置。这样做往往是从实用上考虑,但并非这样做不可,必要时可采用各种配置方式。
在所述实施例中,采用了四个光电二极管4至7,它们将半导体器件再分成四个象限。但视乎用途而定,也可采用不同数量的光电二极管(至少两个)。这些光电二极管必要时还可以再分为两个或两个以上并联的子二极管。
最后,图3是本发明的聚焦设备示意图,该聚焦设备包括参照前面其中一个实施例所述的那种半导体电路,用作光电探测器。源自激光器31的波长为例如800毫微米的射束30经由半透明镜面32和透镜系33在CD或VLP片上成象为发光点,半透明镜面32可由例如棱镜组合体的分界面构成。一部分为片35所反射的射束经由两楔形棱镜36、37为镜面32所折射并作为两个发光点(8、9,同时参看图1)投射到参照图1和2进行说明的那种光电探测器的光电二极管4至7上。借助于源自光电二极管的信号可以校正发光点34相对于其正确位置因片35偏移而引起的偏差。
应该理解的是,本发明并不局限于上述诸实施例,在本发明的范围内是可以作多种修改的。举例说,各种半导体区的导电类型可用相反的类型全部(同时)取代,从而相应地倒转了各电压的极性。此外可采用硅以外的半导体材料,还可以采用其它波长。本发明还可用于这里所介绍的聚焦和定位以外的其它用途。
Claims (5)
1、一种对辐射敏感的半导体器件,该器件具有一个含有至少两个对辐射敏感的二极管的半导体本体,发光点可在二极管上成象,还具有供增强该发光点所产生的光电流用的装置,
其特征在于,所述装置包括一些配置在半导体本体为光电二极管所占据的部位外面的晶体管,各晶体管是供某一对辐射敏感的二极管专用的,并连接到该二极管上,而且至少各晶体管起作用的各部分在半导体本体中彼此配置得比它们专用的对辐射敏感的二极管密。
2、如权利要求1所述的对辐射敏感的半导体器件,其特征在于,各晶体管在半导体本体中彼此配置得尽可能接近。
3、如权利要求1或2所述的对辐射敏感的半导体器件,其特征在于,各对辐射敏感的二极管都成行配置,且各晶体管实质上平行于二极管各行成行配置。
4、如以上任一权利要求所述的对辐射敏感的半导体器件,其特征在于,该器件包括四个配置在四个象限中的对辐射敏感的二极管和四个晶体管。
5、一种聚焦设备,它包括:光束投射装置,用以将光束投射到一表面上;折射装置,偏转部分光束之用;分束装置,用以将偏转光束分成至少两个光束,该两光束往光电探测器上投射发光点,光电探测器则产生稳定该光束相对于该表面的位置的信号,其特征在于,光电探测器采用1至3任一权利要求所述的对辐射敏感的半导体器件。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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NL8901401 | 1989-06-02 | ||
NL8901401A NL8901401A (nl) | 1989-06-02 | 1989-06-02 | Fotogevoelige halfgeleiderinrichting. |
Publications (2)
Publication Number | Publication Date |
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CN1047759A true CN1047759A (zh) | 1990-12-12 |
CN1021677C CN1021677C (zh) | 1993-07-21 |
Family
ID=19854767
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN90104034A Expired - Fee Related CN1021677C (zh) | 1989-06-02 | 1990-05-30 | 光敏半导体器件 |
Country Status (7)
Country | Link |
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US (1) | US5099126A (zh) |
EP (1) | EP0400754B1 (zh) |
JP (1) | JP3165689B2 (zh) |
KR (1) | KR100225186B1 (zh) |
CN (1) | CN1021677C (zh) |
DE (1) | DE69010994T2 (zh) |
NL (1) | NL8901401A (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2878376B2 (ja) * | 1990-02-28 | 1999-04-05 | キヤノン株式会社 | 光電変換装置 |
NL9000635A (nl) * | 1990-03-20 | 1991-10-16 | Philips Nv | Digitaal opteken- en weergavesysteem. |
JPH04137232A (ja) * | 1990-09-27 | 1992-05-12 | Sharp Corp | 光ピックアップ装置 |
SE470116B (sv) * | 1992-04-03 | 1993-11-08 | Asea Brown Boveri | Detektorkrets med en som detektor arbetande halvledardiod och en med dioden integrerad förstärkarkrets |
DE4413481C2 (de) * | 1994-04-19 | 1999-12-16 | Vishay Semiconductor Gmbh | Optoelektronisches Bauelement |
KR100348700B1 (ko) * | 2000-09-16 | 2002-08-13 | 서울대학교 공과대학 교육연구재단 | 광소자 및 그 제조방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US3729660A (en) * | 1970-11-16 | 1973-04-24 | Nova Devices Inc | Ic device arranged to minimize thermal feedback effects |
JPS5372488A (en) * | 1976-12-08 | 1978-06-27 | Nec Corp | Photo semiconductor device |
US4314858A (en) * | 1979-11-23 | 1982-02-09 | Rockwell International Corporation | Method of making a fully integrated monolithic optical receiver |
US4433920A (en) * | 1980-07-08 | 1984-02-28 | Citizen Watch Company Limited | Electronic timepiece having improved primary frequency divider response characteristics |
JPS58131765A (ja) * | 1982-01-29 | 1983-08-05 | Fuji Xerox Co Ltd | 原稿読取装置 |
JPH0633537Y2 (ja) * | 1984-06-30 | 1994-08-31 | ソニ−株式会社 | 感光性半導体装置 |
EP0228620B1 (en) * | 1985-12-10 | 1991-06-05 | Nec Corporation | Optical head comprising a diffraction grating for directing two or more diffracted beams to optical detectors |
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1989
- 1989-06-02 NL NL8901401A patent/NL8901401A/nl not_active Application Discontinuation
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1990
- 1990-05-17 US US07/525,284 patent/US5099126A/en not_active Expired - Fee Related
- 1990-05-29 EP EP90201368A patent/EP0400754B1/en not_active Expired - Lifetime
- 1990-05-29 DE DE69010994T patent/DE69010994T2/de not_active Expired - Fee Related
- 1990-05-30 CN CN90104034A patent/CN1021677C/zh not_active Expired - Fee Related
- 1990-05-31 JP JP14010990A patent/JP3165689B2/ja not_active Expired - Fee Related
- 1990-05-31 KR KR1019900007928A patent/KR100225186B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69010994T2 (de) | 1995-02-16 |
DE69010994D1 (de) | 1994-09-01 |
KR100225186B1 (ko) | 1999-10-15 |
NL8901401A (nl) | 1991-01-02 |
CN1021677C (zh) | 1993-07-21 |
US5099126A (en) | 1992-03-24 |
EP0400754B1 (en) | 1994-07-27 |
EP0400754A1 (en) | 1990-12-05 |
JP3165689B2 (ja) | 2001-05-14 |
KR910002015A (ko) | 1991-01-31 |
JPH0329376A (ja) | 1991-02-07 |
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