NL8800857A - Inrichting en werkwijze voor het vervaardigen van een inrichting. - Google Patents
Inrichting en werkwijze voor het vervaardigen van een inrichting. Download PDFInfo
- Publication number
- NL8800857A NL8800857A NL8800857A NL8800857A NL8800857A NL 8800857 A NL8800857 A NL 8800857A NL 8800857 A NL8800857 A NL 8800857A NL 8800857 A NL8800857 A NL 8800857A NL 8800857 A NL8800857 A NL 8800857A
- Authority
- NL
- Netherlands
- Prior art keywords
- value
- superconducting
- amorphous alloy
- alloy
- amorphous
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims description 34
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 14
- 239000000956 alloy Substances 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 238000002425 crystallisation Methods 0.000 claims description 6
- 230000008025 crystallization Effects 0.000 claims description 6
- 229910052723 transition metal Inorganic materials 0.000 claims description 5
- 150000003624 transition metals Chemical class 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 50
- 239000000758 substrate Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910004228 TaPd Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910004231 TaRh Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000005300 metallic glass Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76891—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by using superconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0744—Manufacture or deposition of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/85—Superconducting active materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
- Y10S505/702—Josephson junction present
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/873—Active solid-state device
- Y10S505/874—Active solid-state device with josephson junction, e.g. squid
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8800857A NL8800857A (nl) | 1988-04-05 | 1988-04-05 | Inrichting en werkwijze voor het vervaardigen van een inrichting. |
| US07/316,395 US5049543A (en) | 1988-04-05 | 1989-02-27 | Device and method of manufacturing a device |
| EP89200818A EP0336505B1 (fr) | 1988-04-05 | 1989-03-30 | Dispositif et procédé pour la réalisation d'un dispositif |
| DE68911973T DE68911973T2 (de) | 1988-04-05 | 1989-03-30 | Anordnung und Verfahren zum Herstellen einer Anordnung. |
| KR1019890004347A KR890016625A (ko) | 1988-04-05 | 1989-04-03 | 반도체 장치 및 그 제조방법 |
| JP1081644A JPH01302875A (ja) | 1988-04-05 | 1989-04-03 | 装置およびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8800857 | 1988-04-05 | ||
| NL8800857A NL8800857A (nl) | 1988-04-05 | 1988-04-05 | Inrichting en werkwijze voor het vervaardigen van een inrichting. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8800857A true NL8800857A (nl) | 1989-11-01 |
Family
ID=19852063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8800857A NL8800857A (nl) | 1988-04-05 | 1988-04-05 | Inrichting en werkwijze voor het vervaardigen van een inrichting. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5049543A (fr) |
| EP (1) | EP0336505B1 (fr) |
| JP (1) | JPH01302875A (fr) |
| KR (1) | KR890016625A (fr) |
| DE (1) | DE68911973T2 (fr) |
| NL (1) | NL8800857A (fr) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63314850A (ja) * | 1987-06-18 | 1988-12-22 | Fujitsu Ltd | 半導体装置 |
| US5256897A (en) * | 1988-11-28 | 1993-10-26 | Hitachi, Ltd. | Oxide superconducting device |
| US5274249A (en) * | 1991-12-20 | 1993-12-28 | University Of Maryland | Superconducting field effect devices with thin channel layer |
| US5418214A (en) * | 1992-07-17 | 1995-05-23 | Northwestern University | Cuprate-titanate superconductor and method for making |
| US5356474A (en) * | 1992-11-27 | 1994-10-18 | General Electric Company | Apparatus and method for making aligned Hi-Tc tape superconductors |
| US5356833A (en) * | 1993-04-05 | 1994-10-18 | Motorola, Inc. | Process for forming an intermetallic member on a semiconductor substrate |
| US6081182A (en) * | 1996-11-22 | 2000-06-27 | Matsushita Electric Industrial Co., Ltd. | Temperature sensor element and temperature sensor including the same |
| US6642567B1 (en) * | 2000-08-31 | 2003-11-04 | Micron Technology, Inc. | Devices containing zirconium-platinum-containing materials and methods for preparing such materials and devices |
| US8641839B2 (en) * | 2007-02-13 | 2014-02-04 | Yale University | Method for imprinting and erasing amorphous metal alloys |
| US7951708B2 (en) * | 2009-06-03 | 2011-05-31 | International Business Machines Corporation | Copper interconnect structure with amorphous tantalum iridium diffusion barrier |
| US9741918B2 (en) | 2013-10-07 | 2017-08-22 | Hypres, Inc. | Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55164860U (fr) * | 1979-05-16 | 1980-11-27 | ||
| JPS58110084A (ja) * | 1981-12-24 | 1983-06-30 | Mitsubishi Electric Corp | ジヨセフソン素子 |
| US4432134A (en) * | 1982-05-10 | 1984-02-21 | Rockwell International Corporation | Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices |
| JPS603797B2 (ja) * | 1982-05-29 | 1985-01-30 | 工業技術院長 | ジヨセフソン・トンネル接合素子 |
| US4470190A (en) * | 1982-11-29 | 1984-09-11 | At&T Bell Laboratories | Josephson device fabrication method |
| JPS58212186A (ja) * | 1983-05-06 | 1983-12-09 | Hitachi Ltd | ジヨセフソン接合装置 |
| JPS60148178A (ja) * | 1984-01-12 | 1985-08-05 | Nippon Telegr & Teleph Corp <Ntt> | トンネル形ジヨセフソン接合素子及びその製法 |
| JPS616882A (ja) * | 1984-06-21 | 1986-01-13 | Agency Of Ind Science & Technol | 超電導集積回路の端子電極とその製造方法 |
| JPH0634414B2 (ja) * | 1986-01-14 | 1994-05-02 | 富士通株式会社 | 超伝導デバイス |
| DE3810494C2 (de) * | 1987-03-27 | 1998-08-20 | Hitachi Ltd | Integrierte Halbleiterschaltungseinrichtung mit supraleitender Schicht |
-
1988
- 1988-04-05 NL NL8800857A patent/NL8800857A/nl not_active Application Discontinuation
-
1989
- 1989-02-27 US US07/316,395 patent/US5049543A/en not_active Expired - Fee Related
- 1989-03-30 DE DE68911973T patent/DE68911973T2/de not_active Expired - Fee Related
- 1989-03-30 EP EP89200818A patent/EP0336505B1/fr not_active Expired - Lifetime
- 1989-04-03 KR KR1019890004347A patent/KR890016625A/ko not_active Application Discontinuation
- 1989-04-03 JP JP1081644A patent/JPH01302875A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01302875A (ja) | 1989-12-06 |
| DE68911973D1 (de) | 1994-02-17 |
| DE68911973T2 (de) | 1994-07-07 |
| EP0336505B1 (fr) | 1994-01-05 |
| EP0336505A1 (fr) | 1989-10-11 |
| KR890016625A (ko) | 1989-11-29 |
| US5049543A (en) | 1991-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |