NL8602705A - Elektronische halfgeleiderinrichting ter bescherming van geintegreerde schakelingen tegen elektrostatische ontladingen, en werkwijze voor de vervaardiging ervan. - Google Patents
Elektronische halfgeleiderinrichting ter bescherming van geintegreerde schakelingen tegen elektrostatische ontladingen, en werkwijze voor de vervaardiging ervan. Download PDFInfo
- Publication number
- NL8602705A NL8602705A NL8602705A NL8602705A NL8602705A NL 8602705 A NL8602705 A NL 8602705A NL 8602705 A NL8602705 A NL 8602705A NL 8602705 A NL8602705 A NL 8602705A NL 8602705 A NL8602705 A NL 8602705A
- Authority
- NL
- Netherlands
- Prior art keywords
- polarity
- layer
- chemical element
- integrated circuit
- protected
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000002513 implantation Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- 229910052729 chemical element Inorganic materials 0.000 claims 12
- 239000002244 precipitate Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2263985 | 1985-10-29 | ||
| IT22639/85A IT1186338B (it) | 1985-10-29 | 1985-10-29 | Dispositivo elettronico a semiconduttore per la protezione di circuiti integrati da scariche elettrostatiche e procedimento per la sua fabbricazione |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8602705A true NL8602705A (nl) | 1987-05-18 |
Family
ID=11198725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8602705A NL8602705A (nl) | 1985-10-29 | 1986-10-28 | Elektronische halfgeleiderinrichting ter bescherming van geintegreerde schakelingen tegen elektrostatische ontladingen, en werkwijze voor de vervaardiging ervan. |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4829344A (ja) |
| JP (1) | JPS62104156A (ja) |
| DE (1) | DE3635523A1 (ja) |
| FR (1) | FR2589279B1 (ja) |
| GB (1) | GB2182490B (ja) |
| IT (1) | IT1186338B (ja) |
| NL (1) | NL8602705A (ja) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61218143A (ja) * | 1985-03-25 | 1986-09-27 | Hitachi Ltd | 半導体集積回路装置 |
| IT1188398B (it) * | 1986-02-18 | 1988-01-07 | Sgs Microelettronica Spa | Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa |
| US4750081A (en) * | 1987-10-19 | 1988-06-07 | Unisys Corporation | Phantom ESD protection circuit employing E-field crowding |
| US5172290A (en) * | 1988-08-10 | 1992-12-15 | Siemens Aktiengesellschaft | Gate-source protective circuit for a power mosfet |
| JPH02234463A (ja) * | 1989-01-20 | 1990-09-17 | Siemens Ag | Ｅｓｄ保護構造 |
| US5182223A (en) * | 1990-12-19 | 1993-01-26 | Texas Instruments Incorporated | Method of making an integrated circuit with capacitor |
| DE4200884A1 (de) * | 1991-01-16 | 1992-07-23 | Micron Technology Inc | Integrierte halbleiterschaltungsvorrichtung |
| IT1253683B (it) * | 1991-09-12 | 1995-08-22 | Sgs Thomson Microelectronics | Dispositivo a bassa corrente di perdita per la protezione di un circuito integrato da scariche elettrostatiche. |
| US5610079A (en) * | 1995-06-19 | 1997-03-11 | Reliance Electric Industrial Company | Self-biased moat for parasitic current suppression in integrated circuits |
| TW367603B (en) * | 1998-06-20 | 1999-08-21 | United Microelectronics Corp | Electrostatic discharge protection circuit for SRAM |
| US20060268479A1 (en) * | 2005-05-31 | 2006-11-30 | Atmel Germany Gmbh | ESD protection structure |
| WO2011064618A1 (en) * | 2009-11-26 | 2011-06-03 | Nxp B.V. | Methods, systems and devices for electrostatic discharge protection |
| KR101923763B1 (ko) | 2015-03-13 | 2018-11-30 | 매그나칩 반도체 유한회사 | 레벨 쉬프트 회로 보호용 정전기 방전 보호 회로 및 소자 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2875505A (en) * | 1952-12-11 | 1959-03-03 | Bell Telephone Labor Inc | Semiconductor translating device |
| DE1046783B (de) * | 1956-07-13 | 1958-12-18 | Siemens Ag | Halbleiteranordnung mit einem schwach dotierten Halbleiterkoerper und einem grossflaechigen p-n-UEbergang |
| NL125293C (ja) * | 1961-05-16 | 1900-01-01 | ||
| US3268739A (en) * | 1963-06-20 | 1966-08-23 | Dickson Electronics Corp | Semiconductor voltage reference system having substantially zero temperature coefficient |
| US3263092A (en) * | 1963-09-12 | 1966-07-26 | Dickson Electronics Corp | Low impedance voltage regulating circuit |
| CH427042A (de) * | 1963-09-25 | 1966-12-31 | Licentia Gmbh | Halbleiterbauelement mit einem Halbleiterkörper aus drei oder mehr Zonen abwechselnd entgegengesetzten Leitfähigkeitstyps |
| US3469155A (en) * | 1966-09-23 | 1969-09-23 | Westinghouse Electric Corp | Punch-through means integrated with mos type devices for protection against insulation layer breakdown |
| US3512058A (en) * | 1968-04-10 | 1970-05-12 | Rca Corp | High voltage transient protection for an insulated gate field effect transistor |
| GB1285272A (en) * | 1970-04-01 | 1972-08-16 | Hallite Holdings Ltd | Gland seal assemblies |
| US3806773A (en) * | 1971-07-17 | 1974-04-23 | Sony Corp | Field effect transistor having back-to-back diodes connected to the gate electrode and having a protective layer between the source and the diodes to prevent thyristor action |
| JPS53101987A (en) * | 1977-02-16 | 1978-09-05 | Sanyo Electric Co Ltd | Transistor incorporated into monolithic integrated circuit |
| JPS5946566B2 (ja) * | 1977-07-05 | 1984-11-13 | 旭化成株式会社 | ミミズ養殖槽 |
| JPS55102268A (en) * | 1979-01-31 | 1980-08-05 | Toshiba Corp | Protecting circuit for semiconductor device |
| US4264941A (en) * | 1979-02-14 | 1981-04-28 | National Semiconductor Corporation | Protective circuit for insulated gate field effect transistor integrated circuits |
| US4476476A (en) * | 1979-04-05 | 1984-10-09 | National Semiconductor Corporation | CMOS Input and output protection circuit |
| JPS5756960A (en) * | 1980-09-22 | 1982-04-05 | Hitachi Ltd | Semiconductor integrated circuit device |
| US4405933A (en) * | 1981-02-04 | 1983-09-20 | Rca Corporation | Protective integrated circuit device utilizing back-to-back zener diodes |
| JPS58161378A (ja) * | 1982-03-18 | 1983-09-24 | Toshiba Corp | 定電圧ダイオ−ド |
| US4607274A (en) * | 1982-10-15 | 1986-08-19 | Nec Corporation | Complementary MOS field effect transistor integrated circuit with protection function |
| US4626882A (en) * | 1984-07-18 | 1986-12-02 | International Business Machines Corporation | Twin diode overvoltage protection structure |
-
1985
- 1985-10-29 IT IT22639/85A patent/IT1186338B/it active
-
1986
- 1986-10-18 DE DE19863635523 patent/DE3635523A1/de not_active Ceased
- 1986-10-20 GB GB8625068A patent/GB2182490B/en not_active Expired
- 1986-10-20 US US06/921,071 patent/US4829344A/en not_active Expired - Lifetime
- 1986-10-27 FR FR868614921A patent/FR2589279B1/fr not_active Expired - Lifetime
- 1986-10-28 JP JP61258102A patent/JPS62104156A/ja active Pending
- 1986-10-28 NL NL8602705A patent/NL8602705A/nl not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2589279B1 (fr) | 1991-06-07 |
| DE3635523A1 (de) | 1987-04-30 |
| GB8625068D0 (en) | 1986-11-26 |
| GB2182490B (en) | 1989-10-11 |
| JPS62104156A (ja) | 1987-05-14 |
| IT8522639A0 (it) | 1985-10-29 |
| US4829344A (en) | 1989-05-09 |
| FR2589279A1 (fr) | 1987-04-30 |
| GB2182490A (en) | 1987-05-13 |
| IT1186338B (it) | 1987-11-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BV | The patent application has lapsed |