NL8600769A - Werkwijze voor het vervaardigen van een halfgeleiderinrichting. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleiderinrichting. Download PDFInfo
- Publication number
- NL8600769A NL8600769A NL8600769A NL8600769A NL8600769A NL 8600769 A NL8600769 A NL 8600769A NL 8600769 A NL8600769 A NL 8600769A NL 8600769 A NL8600769 A NL 8600769A NL 8600769 A NL8600769 A NL 8600769A
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- opening
- conductive layer
- electrode zone
- doping
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000011282 treatment Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 21
- 230000005669 field effect Effects 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 230000000873 masking effect Effects 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 12
- 239000011810 insulating material Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 230000009970 fire resistant effect Effects 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 238000009413 insulation Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- -1 titanium-tungsten-aluminum Chemical compound 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8600769A NL8600769A (nl) | 1986-03-26 | 1986-03-26 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| EP87200371A EP0242893B1 (en) | 1986-03-26 | 1987-03-02 | Method of manufacturing a semiconductor device |
| ES198787200371T ES2038986T3 (es) | 1986-03-26 | 1987-03-02 | Metodo de fabricacion de un dispositivo semiconductor. |
| DE8787200371T DE3783799T2 (de) | 1986-03-26 | 1987-03-02 | Verfahren zur herstellung einer halbleiteranordnung. |
| CA000532339A CA1288527C (en) | 1986-03-26 | 1987-03-18 | Method of manufacturing a semiconductor device having a contact opening derived from a doping opening |
| KR87002631A KR950010052B1 (en) | 1986-03-26 | 1987-03-23 | Method of manufacturing a semiconductor device |
| JP62068126A JPS62232164A (ja) | 1986-03-26 | 1987-03-24 | 半導体装置およびその製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8600769A NL8600769A (nl) | 1986-03-26 | 1986-03-26 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
| NL8600769 | 1986-03-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8600769A true NL8600769A (nl) | 1987-10-16 |
Family
ID=19847771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8600769A NL8600769A (nl) | 1986-03-26 | 1986-03-26 | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP0242893B1 (es) |
| JP (1) | JPS62232164A (es) |
| KR (1) | KR950010052B1 (es) |
| CA (1) | CA1288527C (es) |
| DE (1) | DE3783799T2 (es) |
| ES (1) | ES2038986T3 (es) |
| NL (1) | NL8600769A (es) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5247197A (en) * | 1987-11-05 | 1993-09-21 | Fujitsu Limited | Dynamic random access memory device having improved contact hole structures |
| JPH01120847A (ja) * | 1987-11-05 | 1989-05-12 | Fujitsu Ltd | 半導体装置 |
| US6091129A (en) * | 1996-06-19 | 2000-07-18 | Cypress Semiconductor Corporation | Self-aligned trench isolated structure |
| US5830797A (en) * | 1996-06-20 | 1998-11-03 | Cypress Semiconductor Corporation | Interconnect methods and apparatus |
| US6004874A (en) * | 1996-06-26 | 1999-12-21 | Cypress Semiconductor Corporation | Method for forming an interconnect |
| US5911887A (en) * | 1996-07-19 | 1999-06-15 | Cypress Semiconductor Corporation | Method of etching a bond pad |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS567463A (en) * | 1979-06-29 | 1981-01-26 | Hitachi Ltd | Semiconductor device and its manufacture |
| JPS5870570A (ja) * | 1981-09-28 | 1983-04-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| US4507171A (en) * | 1982-08-06 | 1985-03-26 | International Business Machines Corporation | Method for contacting a narrow width PN junction region |
| JPS60163446A (ja) * | 1984-02-02 | 1985-08-26 | Pioneer Electronic Corp | スル−ホ−ルの形成方法 |
| JPS60194570A (ja) * | 1984-03-16 | 1985-10-03 | Toshiba Corp | 半導体装置の製造方法 |
-
1986
- 1986-03-26 NL NL8600769A patent/NL8600769A/nl not_active Application Discontinuation
-
1987
- 1987-03-02 ES ES198787200371T patent/ES2038986T3/es not_active Expired - Lifetime
- 1987-03-02 DE DE8787200371T patent/DE3783799T2/de not_active Expired - Fee Related
- 1987-03-02 EP EP87200371A patent/EP0242893B1/en not_active Expired - Lifetime
- 1987-03-18 CA CA000532339A patent/CA1288527C/en not_active Expired - Lifetime
- 1987-03-23 KR KR87002631A patent/KR950010052B1/ko not_active IP Right Cessation
- 1987-03-24 JP JP62068126A patent/JPS62232164A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP0242893A1 (en) | 1987-10-28 |
| DE3783799T2 (de) | 1993-07-01 |
| JPS62232164A (ja) | 1987-10-12 |
| DE3783799D1 (de) | 1993-03-11 |
| CA1288527C (en) | 1991-09-03 |
| KR870009475A (ko) | 1987-10-27 |
| KR950010052B1 (en) | 1995-09-06 |
| EP0242893B1 (en) | 1993-01-27 |
| ES2038986T3 (es) | 1993-08-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |