NL8302092A - Halfgeleiderinrichting bevattende een veldeffekttransistor. - Google Patents
Halfgeleiderinrichting bevattende een veldeffekttransistor. Download PDFInfo
- Publication number
- NL8302092A NL8302092A NL8302092A NL8302092A NL8302092A NL 8302092 A NL8302092 A NL 8302092A NL 8302092 A NL8302092 A NL 8302092A NL 8302092 A NL8302092 A NL 8302092A NL 8302092 A NL8302092 A NL 8302092A
- Authority
- NL
- Netherlands
- Prior art keywords
- zone
- zones
- conductive layer
- main surface
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 99
- 230000005669 field effect Effects 0.000 title description 14
- 230000000295 complement effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 102
- 230000036961 partial effect Effects 0.000 description 57
- 230000015556 catabolic process Effects 0.000 description 25
- 238000009826 distribution Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- 238000007667 floating Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000004922 lacquer Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 241000272168 Laridae Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8302092A NL8302092A (nl) | 1983-06-13 | 1983-06-13 | Halfgeleiderinrichting bevattende een veldeffekttransistor. |
| DE8484200828T DE3472040D1 (en) | 1983-06-13 | 1984-06-12 | Semiconductor device comprising a field effect transistor |
| EP84200828A EP0132861B1 (en) | 1983-06-13 | 1984-06-12 | Semiconductor device comprising a field effect transistor |
| JP59120054A JPS607764A (ja) | 1983-06-13 | 1984-06-13 | 半導体装置 |
| CA000456467A CA1223088A (en) | 1983-06-13 | 1984-06-13 | Semiconductor device comprising a field effect transistor |
| US06/854,064 US4642674A (en) | 1983-06-13 | 1986-04-17 | Field effect semiconductor device having improved voltage breakdown characteristics |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8302092 | 1983-06-13 | ||
| NL8302092A NL8302092A (nl) | 1983-06-13 | 1983-06-13 | Halfgeleiderinrichting bevattende een veldeffekttransistor. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8302092A true NL8302092A (nl) | 1985-01-02 |
Family
ID=19842003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8302092A NL8302092A (nl) | 1983-06-13 | 1983-06-13 | Halfgeleiderinrichting bevattende een veldeffekttransistor. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4642674A (cs) |
| EP (1) | EP0132861B1 (cs) |
| JP (1) | JPS607764A (cs) |
| CA (1) | CA1223088A (cs) |
| DE (1) | DE3472040D1 (cs) |
| NL (1) | NL8302092A (cs) |
Families Citing this family (80)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2165090A (en) * | 1984-09-26 | 1986-04-03 | Philips Electronic Associated | Improving the field distribution in high voltage semiconductor devices |
| JP2572210B2 (ja) * | 1984-11-20 | 1997-01-16 | 三菱電機株式会社 | 縦型パワ−ｍｏｓ電界効果型半導体装置 |
| JP2524574B2 (ja) * | 1985-03-27 | 1996-08-14 | オリンパス光学工業株式会社 | 走査型光学顕微鏡 |
| JPH0827431B2 (ja) * | 1985-05-20 | 1996-03-21 | オリンパス光学工業株式会社 | 走査型光学顕微鏡 |
| US4641162A (en) * | 1985-12-11 | 1987-02-03 | General Electric Company | Current limited insulated gate device |
| JPS62156505A (ja) * | 1986-09-20 | 1987-07-11 | Canon Inc | アライメント方法 |
| EP0279403A3 (en) * | 1987-02-16 | 1988-12-07 | Nec Corporation | Vertical mos field effect transistor having a high withstand voltage and a high switching speed |
| US4775879A (en) * | 1987-03-18 | 1988-10-04 | Motorola Inc. | FET structure arrangement having low on resistance |
| US4823176A (en) * | 1987-04-03 | 1989-04-18 | General Electric Company | Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area |
| JPS63252480A (ja) * | 1987-04-09 | 1988-10-19 | Mitsubishi Electric Corp | 縦形モス電界効果トランジスタ |
| JPS63253664A (ja) * | 1987-04-10 | 1988-10-20 | Sony Corp | バイポ−ラトランジスタ |
| JPS6439069A (en) * | 1987-04-14 | 1989-02-09 | Nec Corp | Field-effect transistor |
| FR2616966B1 (fr) * | 1987-06-22 | 1989-10-27 | Thomson Semiconducteurs | Structure de transistors mos de puissance |
| JPS6448467A (en) * | 1987-08-19 | 1989-02-22 | Sanyo Electric Co | Manufacture of semiconductor device |
| JPS6448465A (en) * | 1987-08-19 | 1989-02-22 | Sanyo Electric Co | Semiconductor device |
| FR2644651B1 (fr) * | 1989-03-15 | 1991-07-05 | Sgs Thomson Microelectronics | Circuit de commande de transistor mos de puissance sur charge inductive |
| EP0416805B1 (en) * | 1989-08-30 | 1996-11-20 | Siliconix, Inc. | Transistor with voltage clamp |
| US5243211A (en) * | 1991-11-25 | 1993-09-07 | Harris Corporation | Power fet with shielded channels |
| US5477077A (en) * | 1992-04-17 | 1995-12-19 | Fuji Electric Co., Ltd. | Semiconductor device and a method for the manufacture thereof |
| JPH07240520A (ja) * | 1994-03-01 | 1995-09-12 | Fuji Electric Co Ltd | 絶縁ゲート型バイポーラトランジスタ |
| JP3183055B2 (ja) * | 1994-08-08 | 2001-07-03 | 富士電機株式会社 | 半導体双方向性スイッチおよびその駆動方法 |
| US5510281A (en) * | 1995-03-20 | 1996-04-23 | General Electric Company | Method of fabricating a self-aligned DMOS transistor device using SiC and spacers |
| JP2800884B2 (ja) * | 1995-10-27 | 1998-09-21 | 日本電気株式会社 | 横型ｄｓａパワーｍｏｓｆｅｔを備えた半導体装置 |
| EP0865085A1 (en) | 1997-03-11 | 1998-09-16 | STMicroelectronics S.r.l. | Insulated gate bipolar transistor with high dynamic ruggedness |
| EP0892435A1 (en) * | 1997-07-14 | 1999-01-20 | STMicroelectronics S.r.l. | Integrated semiconductor transistor with current sensing |
| US5965925A (en) * | 1997-10-22 | 1999-10-12 | Artisan Components, Inc. | Integrated circuit layout methods and layout structures |
| JP4537646B2 (ja) * | 2002-06-14 | 2010-09-01 | 株式会社東芝 | 半導体装置 |
| JP2005136166A (ja) * | 2003-10-30 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 縦型ｍｏｓｆｅｔ |
| US7279743B2 (en) | 2003-12-02 | 2007-10-09 | Vishay-Siliconix | Closed cell trench metal-oxide-semiconductor field effect transistor |
| US8183629B2 (en) * | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
| JP2006019553A (ja) * | 2004-07-02 | 2006-01-19 | Matsushita Electric Ind Co Ltd | 縦型半導体装置 |
| US7659570B2 (en) * | 2005-05-09 | 2010-02-09 | Alpha & Omega Semiconductor Ltd. | Power MOSFET device structure for high frequency applications |
| US8471390B2 (en) | 2006-05-12 | 2013-06-25 | Vishay-Siliconix | Power MOSFET contact metallization |
| US8368126B2 (en) | 2007-04-19 | 2013-02-05 | Vishay-Siliconix | Trench metal oxide semiconductor with recessed trench material and remote contacts |
| JP4800286B2 (ja) * | 2007-10-16 | 2011-10-26 | Ｏｋｉセミコンダクタ株式会社 | 半導体装置とその製造方法 |
| JP4756084B2 (ja) * | 2009-07-06 | 2011-08-24 | 株式会社東芝 | 半導体装置 |
| US9306056B2 (en) | 2009-10-30 | 2016-04-05 | Vishay-Siliconix | Semiconductor device with trench-like feed-throughs |
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| US9251893B2 (en) | 2010-08-20 | 2016-02-02 | Shine C. Chung | Multiple-bit programmable resistive memory using diode as program selector |
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| US10249379B2 (en) | 2010-08-20 | 2019-04-02 | Attopsemi Technology Co., Ltd | One-time programmable devices having program selector for electrical fuses with extended area |
| US9460807B2 (en) | 2010-08-20 | 2016-10-04 | Shine C. Chung | One-time programmable memory devices using FinFET technology |
| US9818478B2 (en) | 2012-12-07 | 2017-11-14 | Attopsemi Technology Co., Ltd | Programmable resistive device and memory using diode as selector |
| US9496033B2 (en) | 2010-08-20 | 2016-11-15 | Attopsemi Technology Co., Ltd | Method and system of programmable resistive devices with read capability using a low supply voltage |
| US8488364B2 (en) | 2010-08-20 | 2013-07-16 | Shine C. Chung | Circuit and system of using a polysilicon diode as program selector for resistive devices in CMOS logic processes |
| US8988965B2 (en) | 2010-11-03 | 2015-03-24 | Shine C. Chung | Low-pin-count non-volatile memory interface |
| US9076513B2 (en) | 2010-11-03 | 2015-07-07 | Shine C. Chung | Low-pin-count non-volatile memory interface with soft programming capability |
| US9019791B2 (en) | 2010-11-03 | 2015-04-28 | Shine C. Chung | Low-pin-count non-volatile memory interface for 3D IC |
| US9496265B2 (en) | 2010-12-08 | 2016-11-15 | Attopsemi Technology Co., Ltd | Circuit and system of a high density anti-fuse |
| US8848423B2 (en) | 2011-02-14 | 2014-09-30 | Shine C. Chung | Circuit and system of using FinFET for building programmable resistive devices |
| US10192615B2 (en) | 2011-02-14 | 2019-01-29 | Attopsemi Technology Co., Ltd | One-time programmable devices having a semiconductor fin structure with a divided active region |
| US10586832B2 (en) | 2011-02-14 | 2020-03-10 | Attopsemi Technology Co., Ltd | One-time programmable devices using gate-all-around structures |
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| US10535413B2 (en) | 2017-04-14 | 2020-01-14 | Attopsemi Technology Co., Ltd | Low power read operation for programmable resistive memories |
| US11062786B2 (en) | 2017-04-14 | 2021-07-13 | Attopsemi Technology Co., Ltd | One-time programmable memories with low power read operation and novel sensing scheme |
| US10726914B2 (en) | 2017-04-14 | 2020-07-28 | Attopsemi Technology Co. Ltd | Programmable resistive memories with low power read operation and novel sensing scheme |
| US11615859B2 (en) | 2017-04-14 | 2023-03-28 | Attopsemi Technology Co., Ltd | One-time programmable memories with ultra-low power read operation and novel sensing scheme |
| US10770160B2 (en) | 2017-11-30 | 2020-09-08 | Attopsemi Technology Co., Ltd | Programmable resistive memory formed by bit slices from a standard cell library |
| WO2019225567A1 (ja) * | 2018-05-23 | 2019-11-28 | 三菱電機株式会社 | 炭化珪素半導体装置および電力変換装置 |
| CN113097300A (zh) * | 2019-12-23 | 2021-07-09 | 华润微电子（重庆）有限公司 | 一种功率器件及其制作方法 |
| US20220181443A1 (en) * | 2020-12-08 | 2022-06-09 | AZ Power, Inc | Power MOSFET With Enhanced Cell Design |
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Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3012185A1 (de) * | 1980-03-28 | 1981-10-08 | Siemens AG, 1000 Berlin und 8000 München | Feldeffekttransistor |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| DE3175641D1 (en) * | 1980-08-25 | 1987-01-08 | Itt Ind Gmbh Deutsche | High-voltage semiconductor switch |
| NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
| US4399449A (en) * | 1980-11-17 | 1983-08-16 | International Rectifier Corporation | Composite metal and polysilicon field plate structure for high voltage semiconductor devices |
| US4412242A (en) * | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
| DE3103444A1 (de) * | 1981-02-02 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand |
| US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
| DE3224642A1 (de) * | 1982-07-01 | 1984-01-05 | Siemens AG, 1000 Berlin und 8000 München | Igfet mit injektorzone |
| FR2537780A1 (fr) * | 1982-12-08 | 1984-06-15 | Radiotechnique Compelec | Dispositif mos fet de puissance a structure plane multicellulaire |
-
1983
- 1983-06-13 NL NL8302092A patent/NL8302092A/nl not_active Application Discontinuation
-
1984
- 1984-06-12 EP EP84200828A patent/EP0132861B1/en not_active Expired
- 1984-06-12 DE DE8484200828T patent/DE3472040D1/de not_active Expired
- 1984-06-13 JP JP59120054A patent/JPS607764A/ja active Granted
- 1984-06-13 CA CA000456467A patent/CA1223088A/en not_active Expired
-
1986
- 1986-04-17 US US06/854,064 patent/US4642674A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0132861B1 (en) | 1988-06-08 |
| DE3472040D1 (en) | 1988-07-14 |
| JPS607764A (ja) | 1985-01-16 |
| JPH0120541B2 (cs) | 1989-04-17 |
| EP0132861A1 (en) | 1985-02-13 |
| CA1223088A (en) | 1987-06-16 |
| US4642674A (en) | 1987-02-10 |
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