JPS6448465A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6448465A
JPS6448465A JP62205577A JP20557787A JPS6448465A JP S6448465 A JPS6448465 A JP S6448465A JP 62205577 A JP62205577 A JP 62205577A JP 20557787 A JP20557787 A JP 20557787A JP S6448465 A JPS6448465 A JP S6448465A
Authority
JP
Japan
Prior art keywords
area
corner sections
type
diffusion
impurity concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62205577A
Other languages
Japanese (ja)
Inventor
Shigemi Okada
Tadashi Natsume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP62205577A priority Critical patent/JPS6448465A/en
Publication of JPS6448465A publication Critical patent/JPS6448465A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To make heterogeneous areas to be non-operating areas while the area other than the heterogeneous areas being made to operate uniformly, by making a diffusion area to be of a square shape and by forming the overlapping sections of a second diffusion area. CONSTITUTION:A first diffusion area 3 with a square shape is finally treated by a thermal diffusion, but the corner sections thereof become of a light impurity concentration owing to the square shape thereof. That is, because the impurity concentration of the corner sections is lower than that of the other area in the area 3, the corner sections become such operating areas that operate ununiformly. And, a P<+> type second diffusion area 6 is so formed as to overlap with each of the corner sections. As a result, the conductivity type of the corner sections is converted from N<-> type to P<+> type, which makes the corner sections to be non-operating areas. Therefore, the area other than the corner sections is of homogeneous impurity concentration, which enables said area to operate uniformly.
JP62205577A 1987-08-19 1987-08-19 Semiconductor device Pending JPS6448465A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62205577A JPS6448465A (en) 1987-08-19 1987-08-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205577A JPS6448465A (en) 1987-08-19 1987-08-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6448465A true JPS6448465A (en) 1989-02-22

Family

ID=16509189

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205577A Pending JPS6448465A (en) 1987-08-19 1987-08-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6448465A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094314A (en) * 2007-10-10 2009-04-30 Mitsubishi Electric Corp Semiconductor device with vertical mosfet structure
JP2009130244A (en) * 2007-11-27 2009-06-11 Mitsubishi Electric Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130455A (en) * 1982-09-03 1984-07-27 ウエスタ−ン・エレクトリツク・カムパニ−，インコ−ポレ−テツド Mos transistor integrated circuit
JPS607764A (en) * 1983-06-13 1985-01-16 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59130455A (en) * 1982-09-03 1984-07-27 ウエスタ−ン・エレクトリツク・カムパニ−，インコ−ポレ−テツド Mos transistor integrated circuit
JPS607764A (en) * 1983-06-13 1985-01-16 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094314A (en) * 2007-10-10 2009-04-30 Mitsubishi Electric Corp Semiconductor device with vertical mosfet structure
JP2009130244A (en) * 2007-11-27 2009-06-11 Mitsubishi Electric Corp Semiconductor device

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