NL7611774A - FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed - Google Patents

FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed

Info

Publication number
NL7611774A
NL7611774A NL7611774A NL7611774A NL7611774A NL 7611774 A NL7611774 A NL 7611774A NL 7611774 A NL7611774 A NL 7611774A NL 7611774 A NL7611774 A NL 7611774A NL 7611774 A NL7611774 A NL 7611774A
Authority
NL
Netherlands
Prior art keywords
zone
inlaid
opening
pattern
oxide
Prior art date
Application number
NL7611774A
Other languages
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7611774A priority Critical patent/NL7611774A/en
Publication of NL7611774A publication Critical patent/NL7611774A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

FET comprises a silicon semiconductor body with a region of one type of conductor bordering on the surface. The body carries an opening into which a silicon dioxide pattern is introduced by local oxidn. The pattern is at least partially inlaid into the body and provided on the surface with an opening into which a field effect structure with an insulated gate electrode is formed. In the location of the opening at least one zone of the other conductor type is formed, bordering on the inlaid oxide, which forms the input and output zone of the field effect structure. The zone is introduced in two stages, whereby before forming the inlaid oxide pattern at the location of the said zone, a surface zone of the second conductor type is applied, and on the surface of the body a protective masking pattern is applied as protection against oxidn. The surface of the body is covered at the location of the opening in the shape of the oxide pattern to be applied, and extends to above a part of the applied surface zone, after which the body is subjected to an oxidn. treatment to introduce the inlaid oxide pattern. During the oxidn. treatment the impurities applied in the surface zone diffus deeper into the body so that a zone of the second conductor type is formed which is situated at the edge of the opening in the inlaid oxide pattern and which extends to below the oxide pattern. Subsequently, at the location of the opening, the insulated gate electrode is applied at a distance from the zone, after which a second zone is applied between the gate electrode and the inlaid oxide, which extends less deeply into the body from the surface than the first zone and together with the first zone forms the said input and output zones of the field effect structure. The deeper inlet zone formed by the process has a relatively low resistance compared with a shallow diffusion zone, facilitates the application of electrodes, and reduces short circuiting of the pn transition in the input and output zones due to alloying of the contact material with the semiconductor material.
NL7611774A 1976-10-25 1976-10-25 FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed NL7611774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL7611774A NL7611774A (en) 1976-10-25 1976-10-25 FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7611774A NL7611774A (en) 1976-10-25 1976-10-25 FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed

Publications (1)

Publication Number Publication Date
NL7611774A true NL7611774A (en) 1978-02-28

Family

ID=19827104

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7611774A NL7611774A (en) 1976-10-25 1976-10-25 FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed

Country Status (1)

Country Link
NL (1) NL7611774A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0488154A2 (en) * 1990-11-28 1992-06-03 Seiko Epson Corporation Contact for semiconductor device and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0488154A2 (en) * 1990-11-28 1992-06-03 Seiko Epson Corporation Contact for semiconductor device and method of manufacturing the same
EP0488154A3 (en) * 1990-11-28 1993-04-07 Seiko Epson Corporation Contact for semiconductor device and method of manufacturing the same
US5315150A (en) * 1990-11-28 1994-05-24 Seiko Epson Corporation Semiconductor device and method of manufacturing the same

Similar Documents

Publication Publication Date Title
JPS6449273A (en) Semiconductor device and its manufacture
JPS6480070A (en) Semiconductor integrated circuit
NL7611774A (en) FET prodn. from silicon semiconductor body - by forming inlaid oxide region having aperture in which the field effect structure is formed
JPS5469388A (en) Junction type field effect semiconductor device and its production
JPS6454762A (en) Insulated gate field effect transistor
JPS57102067A (en) Manufacture of complementary type metal oxide semiconductor
JPS56165358A (en) Semiconductor device
JPS5487488A (en) Field effect semiconductor device
JPS56130970A (en) Manufacture of semiconductor device
JPS5736863A (en) Manufacture of semiconductor device
JPS57120371A (en) Manufacture of complementary type mos semiconductor
JPS56110265A (en) Semiconductor device and its manufacture
JPS5511307A (en) Method of manufacturing semiconductor integrated circuit
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5367373A (en) Semiconductor device
JPS5481081A (en) Field effect transistor
JPS54113275A (en) Semiconductor device
JPS561572A (en) Manufacture of semiconductor device
JPS5563876A (en) Field-effect semiconductor device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5759382A (en) Manufacture of semicondutor device
JPS6446976A (en) Manufacture of semiconductor integrated circuit device
JPS5643769A (en) Semiconductor ic circuit device and method of producing the same
JPS57136369A (en) Protective circuit element

Legal Events

Date Code Title Description
BV The patent application has lapsed