NL7411774A - Werkwijze voor het samenvoegen van vlakke oppervlakken. - Google Patents

Werkwijze voor het samenvoegen van vlakke oppervlakken.

Info

Publication number
NL7411774A
NL7411774A NL7411774A NL7411774A NL7411774A NL 7411774 A NL7411774 A NL 7411774A NL 7411774 A NL7411774 A NL 7411774A NL 7411774 A NL7411774 A NL 7411774A NL 7411774 A NL7411774 A NL 7411774A
Authority
NL
Netherlands
Prior art keywords
heat sink
chip
flat surface
flat surfaces
grooves
Prior art date
Application number
NL7411774A
Other languages
English (en)
Dutch (nl)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of NL7411774A publication Critical patent/NL7411774A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29116—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
NL7411774A 1973-09-12 1974-09-05 Werkwijze voor het samenvoegen van vlakke oppervlakken. NL7411774A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US396565A US3860949A (en) 1973-09-12 1973-09-12 Semiconductor mounting devices made by soldering flat surfaces to each other

Publications (1)

Publication Number Publication Date
NL7411774A true NL7411774A (nl) 1975-03-14

Family

ID=23567745

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7411774A NL7411774A (nl) 1973-09-12 1974-09-05 Werkwijze voor het samenvoegen van vlakke oppervlakken.

Country Status (13)

Country Link
US (1) US3860949A (ja)
JP (2) JPS5057579A (ja)
BE (1) BE819707A (ja)
BR (1) BR7407411D0 (ja)
CA (1) CA1001326A (ja)
DE (1) DE2442159A1 (ja)
FR (1) FR2243242B1 (ja)
GB (1) GB1440545A (ja)
IN (1) IN142824B (ja)
IT (1) IT1020252B (ja)
NL (1) NL7411774A (ja)
SE (1) SE403851B (ja)
YU (1) YU37042B (ja)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4100589A (en) * 1975-07-17 1978-07-11 Harris Corporation Microcircuit device including hybrid circuit carrier
DE2556469C3 (de) * 1975-12-15 1978-09-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit Druckkontakt
US4152175A (en) * 1978-07-24 1979-05-01 The United States Of America As Represented By The United States Department Of Energy Silicon solar cell assembly
JPS5568661A (en) * 1978-11-17 1980-05-23 Hitachi Ltd Structure for mounting power transistor
US4439918A (en) * 1979-03-12 1984-04-03 Western Electric Co., Inc. Methods of packaging an electronic device
US4346396A (en) * 1979-03-12 1982-08-24 Western Electric Co., Inc. Electronic device assembly and methods of making same
DE3040867C2 (de) * 1980-10-30 1985-01-17 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zur Herstellung einer Halbleiteranordnung
US4546409A (en) * 1982-04-02 1985-10-08 Mitsubishi Denki Kabushiki Kaisha Device for cooling semiconductor elements
US4566170A (en) * 1983-05-10 1986-01-28 Pitney Bowes Inc. Method of producing a light emiting diode array
DE3324661A1 (de) * 1983-07-08 1985-01-17 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren zum direkten verbinden von metall mit keramik
US4567505A (en) * 1983-10-27 1986-01-28 The Board Of Trustees Of The Leland Stanford Junior University Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like
DE3513530A1 (de) * 1984-06-01 1985-12-05 Bbc Brown Boveri & Cie Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau
DE3442537A1 (de) * 1984-11-22 1986-05-22 BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau Verfahren zum blasenfreien verbinden eines grossflaechigen halbleiter-bauelements mit einem als substrat dienenden bauteil mittels loeten
US4759829A (en) * 1985-06-27 1988-07-26 Rca Corporation Device header and method of making same
US4730666A (en) * 1986-04-30 1988-03-15 International Business Machines Corporation Flexible finned heat exchanger
GB2194477A (en) * 1986-08-28 1988-03-09 Stc Plc Solder joint
DE4107660C2 (de) * 1991-03-09 1995-05-04 Bosch Gmbh Robert Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen
DE4110318C2 (de) * 1991-03-28 2001-10-11 Bosch Gmbh Robert Verfahren zum Zusammenlöten zweier Bauteile
JPH06188385A (ja) * 1992-10-22 1994-07-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
DE29510336U1 (de) * 1995-06-26 1995-08-24 Siemens AG, 80333 München Leistungshybridschaltung
KR19980024134A (ko) * 1996-09-18 1998-07-06 모기 쥰이찌 반도체 패키지
US6081426A (en) * 1996-09-18 2000-06-27 Shinko Electric Industries Co., Ltd. Semiconductor package having a heat slug
EP0873809A1 (fr) * 1997-04-23 1998-10-28 AML Microtechnique Lorraine Société Anonyme Pièces destinées à être assemblées par soudure au bain de sel
DE19735247C2 (de) * 1997-08-14 2001-12-20 Winkelmann & Pannhoff Gmbh Verfahren zum Verlöten von Bauteilen und Bauteil zur Durchführung des Verfahrens
WO2000014415A2 (en) 1998-09-03 2000-03-16 Lucas Novasensor Proportional micromechanical device
US6523560B1 (en) 1998-09-03 2003-02-25 General Electric Corporation Microvalve with pressure equalization
US7011378B2 (en) 1998-09-03 2006-03-14 Ge Novasensor, Inc. Proportional micromechanical valve
EP1214741B1 (de) * 1999-09-22 2005-02-02 Siemens Aktiengesellschaft Steuergerät, insbesondere für die kraftfahrzeugtechnik
US6845962B1 (en) * 2000-03-22 2005-01-25 Kelsey-Hayes Company Thermally actuated microvalve device
US6505811B1 (en) 2000-06-27 2003-01-14 Kelsey-Hayes Company High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate
US6822318B2 (en) * 2001-05-14 2004-11-23 Lightconnect, Inc. Stress isolating die attach structure and method
US7164585B2 (en) * 2003-03-31 2007-01-16 Intel Corporation Thermal interface apparatus, systems, and methods
US8011388B2 (en) * 2003-11-24 2011-09-06 Microstaq, INC Thermally actuated microvalve with multiple fluid ports
CA2546585A1 (en) * 2003-11-24 2005-06-09 Alumina Micro Llc Microvalve device suitable for controlling a variable displacement compressor
US20070251586A1 (en) * 2003-11-24 2007-11-01 Fuller Edward N Electro-pneumatic control valve with microvalve pilot
EP1723359A2 (en) * 2004-02-27 2006-11-22 Alumina Micro LLC Hybrid micro/macro plate valve
US7803281B2 (en) * 2004-03-05 2010-09-28 Microstaq, Inc. Selective bonding for forming a microvalve
US7156365B2 (en) * 2004-07-27 2007-01-02 Kelsey-Hayes Company Method of controlling microvalve actuator
WO2006076386A1 (en) * 2005-01-14 2006-07-20 Alumina Micro Llc. System and method for controlling a variable displacement compressor
US7265977B2 (en) * 2005-01-18 2007-09-04 International Business Machines Corporation Active liquid metal thermal spreader
US7239517B2 (en) * 2005-04-11 2007-07-03 Intel Corporation Integrated heat spreader and method for using
CN101617155B (zh) 2006-12-15 2012-03-21 麦克罗斯塔克公司 微阀装置
DE112008000862T5 (de) 2007-03-30 2010-03-11 Microstaq, Inc., Austin Vorgesteuertes Mikroschieberventil
US8387659B2 (en) 2007-03-31 2013-03-05 Dunan Microstaq, Inc. Pilot operated spool valve
CN102164846B (zh) * 2008-08-09 2016-03-30 盾安美斯泰克公司(美国) 改进的微型阀装置
US8113482B2 (en) * 2008-08-12 2012-02-14 DunAn Microstaq Microvalve device with improved fluid routing
US8540207B2 (en) 2008-12-06 2013-09-24 Dunan Microstaq, Inc. Fluid flow control assembly
US7961469B2 (en) * 2009-03-31 2011-06-14 Apple Inc. Method and apparatus for distributing a thermal interface material
WO2010117874A2 (en) 2009-04-05 2010-10-14 Microstaq, Inc. Method and structure for optimizing heat exchanger performance
WO2011022267A2 (en) 2009-08-17 2011-02-24 Microstaq, Inc. Micromachined device and control method
CN102812538B (zh) 2010-01-28 2015-05-13 盾安美斯泰克股份有限公司 用以促进接合的重调节半导体表面的方法
WO2011094300A2 (en) 2010-01-28 2011-08-04 Microstaq, Inc. Process and structure for high temperature selective fusion bonding
US8996141B1 (en) 2010-08-26 2015-03-31 Dunan Microstaq, Inc. Adaptive predictive functional controller
JP5631775B2 (ja) * 2011-02-24 2014-11-26 新光電気工業株式会社 複合めっき液
US8925793B2 (en) 2012-01-05 2015-01-06 Dunan Microstaq, Inc. Method for making a solder joint
US9140613B2 (en) 2012-03-16 2015-09-22 Zhejiang Dunan Hetian Metal Co., Ltd. Superheat sensor
US9188375B2 (en) 2013-12-04 2015-11-17 Zhejiang Dunan Hetian Metal Co., Ltd. Control element and check valve assembly
RU2721950C2 (ru) * 2015-10-06 2020-05-25 Линде Акциенгезельшафт Торцевые пластины с поверхностной структурой для пластинчатых теплообменников

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3311798A (en) * 1963-09-27 1967-03-28 Trw Semiconductors Inc Component package
GB1004020A (en) * 1964-04-24 1965-09-08 Standard Telephones Cables Ltd Improvements in or relating to the mounting of electrical components
US3706915A (en) * 1970-03-09 1972-12-19 Gen Electric Semiconductor device with low impedance bond
DE2060933C3 (de) * 1970-12-10 1978-08-31 Siemens Ag, 1000 Berlin Und 8000 Muenchen Sockel für ein Halbleiterbauelementgehäuse und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JPS5392385U (ja) 1978-07-28
YU37042B (en) 1984-08-31
FR2243242B1 (ja) 1978-09-15
AU7304474A (en) 1976-03-11
IT1020252B (it) 1977-12-20
JPS5057579A (ja) 1975-05-20
YU243174A (en) 1982-06-18
SE7411472L (ja) 1975-03-13
DE2442159A1 (de) 1975-03-13
IN142824B (ja) 1977-08-27
BR7407411D0 (pt) 1975-07-08
US3860949A (en) 1975-01-14
GB1440545A (en) 1976-06-23
FR2243242A1 (ja) 1975-04-04
CA1001326A (en) 1976-12-07
BE819707A (fr) 1974-12-31
SE403851B (sv) 1978-09-04

Similar Documents

Publication Publication Date Title
NL7411774A (nl) Werkwijze voor het samenvoegen van vlakke oppervlakken.
NL7511392A (nl) Gevormde inrichting van elektrisch geleidende, polymerische samenstelling met een positieve weerstandstemperatuurcoefficient, in het bij- zonder voor verwarmingsdoeleinden.
GB1099650A (en) Device for applying a meltable material
DE3485523D1 (de) Aluminiumnitrid-sinterkeramikkoerper mit hoher waermeleitfaehigkeit.
JPS5414181A (en) Semiconductor laser unit
CN101319775B (zh) 功率型led灯具的高导热柔性填隙材料
US2919386A (en) Rectifier and method of making same
CN205546391U (zh) 散热鳍片
JPS605162U (ja) 温調装置
JPS54107257A (en) Semiconductor device mounting method
CN105277020A (zh) 铝制太阳花散热器
NL173112C (nl) Halfgeleiderinrichting, omvattende een in een hoofdoppervlak van een halfgeleiderlichaam met een eerste geleidingstype gevormde rij halfgeleiderelementen die bestaan uit ten minste een eerste en een tweede basiscontactgebied met het eerste geleidingstype en met een groter geleidingsvermogen dan het halfgeleiderlichaam en uit een relatief klein emittergebied met het aan het eerste geleidingstype tegengestelde tweede geleidingstype en die een stroomgestuurde negatieve weerstandskarakteristiek tussen het eerste basiscontactgebiied en het emittergebied vertonen, wanneer een instelvoedingsbron is aangesloten tussen het eerste en het tweede basiscontactgebied en een beeldopneeminrichting voorzien van een dergelijke halfgeleiderinrichting.
JPS575383A (en) Manufacture of semiconductor device
NL6811236A (en) Sintered semiconductor film and its mfg
JPS6444054A (en) Manufacture of hybrid integrated circuit substrate
JPS56101752A (en) Semiconductor device
JPS5981881A (ja) 発熱板
GB1015042A (en) Electro thermal work tables
JPS5715448A (en) Semiconductor device
JPS56164558A (en) Manufactue of semiconductor device
JPH01187936A (ja) 半導体ダイボンダ用加熱装置
GREBENNIKOV et al. Thermal resistance of high-power semiconductor devices in the pulsed mode of operation(High power semiconductor devices in pulsed operation mode for transient thermal resistance and p-n junction temperature estimation)
RU93021741A (ru) Устройство термоэлектрического модуля из металлополупроводниковых композиционных материалов на основе эффекта пельтье
JPS55143397A (en) Heat-transfer pipe and its manufacturing
JPS5791527A (en) Glass sealed semiconductor device