BE819707A - Procede de jonction de surfaces planes les unes aux autres et dispositifs ainsi obtenus - Google Patents
Procede de jonction de surfaces planes les unes aux autres et dispositifs ainsi obtenusInfo
- Publication number
- BE819707A BE819707A BE148352A BE148352A BE819707A BE 819707 A BE819707 A BE 819707A BE 148352 A BE148352 A BE 148352A BE 148352 A BE148352 A BE 148352A BE 819707 A BE819707 A BE 819707A
- Authority
- BE
- Belgium
- Prior art keywords
- devices
- another
- flat surfaces
- joining flat
- joining
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29116—Lead [Pb] as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01014—Silicon [Si]
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- H01L2924/01027—Cobalt [Co]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01047—Silver [Ag]
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- H01L2924/01082—Lead [Pb]
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- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Die Bonding (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US396565A US3860949A (en) | 1973-09-12 | 1973-09-12 | Semiconductor mounting devices made by soldering flat surfaces to each other |
Publications (1)
Publication Number | Publication Date |
---|---|
BE819707A true BE819707A (fr) | 1974-12-31 |
Family
ID=23567745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE148352A BE819707A (fr) | 1973-09-12 | 1974-09-09 | Procede de jonction de surfaces planes les unes aux autres et dispositifs ainsi obtenus |
Country Status (13)
Country | Link |
---|---|
US (1) | US3860949A (fr) |
JP (2) | JPS5057579A (fr) |
BE (1) | BE819707A (fr) |
BR (1) | BR7407411D0 (fr) |
CA (1) | CA1001326A (fr) |
DE (1) | DE2442159A1 (fr) |
FR (1) | FR2243242B1 (fr) |
GB (1) | GB1440545A (fr) |
IN (1) | IN142824B (fr) |
IT (1) | IT1020252B (fr) |
NL (1) | NL7411774A (fr) |
SE (1) | SE403851B (fr) |
YU (1) | YU37042B (fr) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4100589A (en) * | 1975-07-17 | 1978-07-11 | Harris Corporation | Microcircuit device including hybrid circuit carrier |
DE2556469C3 (de) * | 1975-12-15 | 1978-09-07 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement mit Druckkontakt |
US4152175A (en) * | 1978-07-24 | 1979-05-01 | The United States Of America As Represented By The United States Department Of Energy | Silicon solar cell assembly |
JPS5568661A (en) * | 1978-11-17 | 1980-05-23 | Hitachi Ltd | Structure for mounting power transistor |
US4439918A (en) * | 1979-03-12 | 1984-04-03 | Western Electric Co., Inc. | Methods of packaging an electronic device |
US4346396A (en) * | 1979-03-12 | 1982-08-24 | Western Electric Co., Inc. | Electronic device assembly and methods of making same |
DE3040867C2 (de) * | 1980-10-30 | 1985-01-17 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zur Herstellung einer Halbleiteranordnung |
US4546409A (en) * | 1982-04-02 | 1985-10-08 | Mitsubishi Denki Kabushiki Kaisha | Device for cooling semiconductor elements |
US4566170A (en) * | 1983-05-10 | 1986-01-28 | Pitney Bowes Inc. | Method of producing a light emiting diode array |
DE3324661A1 (de) * | 1983-07-08 | 1985-01-17 | Brown, Boveri & Cie Ag, 6800 Mannheim | Verfahren zum direkten verbinden von metall mit keramik |
US4567505A (en) * | 1983-10-27 | 1986-01-28 | The Board Of Trustees Of The Leland Stanford Junior University | Heat sink and method of attaching heat sink to a semiconductor integrated circuit and the like |
DE3513530A1 (de) * | 1984-06-01 | 1985-12-05 | Bbc Brown Boveri & Cie | Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau |
DE3442537A1 (de) * | 1984-11-22 | 1986-05-22 | BBC Aktiengesellschaft Brown, Boveri & Cie., Baden, Aargau | Verfahren zum blasenfreien verbinden eines grossflaechigen halbleiter-bauelements mit einem als substrat dienenden bauteil mittels loeten |
US4759829A (en) * | 1985-06-27 | 1988-07-26 | Rca Corporation | Device header and method of making same |
US4730666A (en) * | 1986-04-30 | 1988-03-15 | International Business Machines Corporation | Flexible finned heat exchanger |
GB2194477A (en) * | 1986-08-28 | 1988-03-09 | Stc Plc | Solder joint |
DE4107660C2 (de) * | 1991-03-09 | 1995-05-04 | Bosch Gmbh Robert | Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen |
DE4110318C2 (de) * | 1991-03-28 | 2001-10-11 | Bosch Gmbh Robert | Verfahren zum Zusammenlöten zweier Bauteile |
JPH06188385A (ja) * | 1992-10-22 | 1994-07-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
DE29510336U1 (de) * | 1995-06-26 | 1995-08-24 | Siemens AG, 80333 München | Leistungshybridschaltung |
KR19980024134A (ko) * | 1996-09-18 | 1998-07-06 | 모기 쥰이찌 | 반도체 패키지 |
US6081426A (en) * | 1996-09-18 | 2000-06-27 | Shinko Electric Industries Co., Ltd. | Semiconductor package having a heat slug |
EP0873809A1 (fr) * | 1997-04-23 | 1998-10-28 | AML Microtechnique Lorraine Société Anonyme | Pièces destinées à être assemblées par soudure au bain de sel |
DE19735247C2 (de) * | 1997-08-14 | 2001-12-20 | Winkelmann & Pannhoff Gmbh | Verfahren zum Verlöten von Bauteilen und Bauteil zur Durchführung des Verfahrens |
WO2000014415A2 (fr) | 1998-09-03 | 2000-03-16 | Lucas Novasensor | Dispositif micromecanique proportionnel |
US6523560B1 (en) | 1998-09-03 | 2003-02-25 | General Electric Corporation | Microvalve with pressure equalization |
US7011378B2 (en) | 1998-09-03 | 2006-03-14 | Ge Novasensor, Inc. | Proportional micromechanical valve |
EP1214741B1 (fr) * | 1999-09-22 | 2005-02-02 | Siemens Aktiengesellschaft | Appareil de commande, notamment pour applications automobiles |
US6845962B1 (en) * | 2000-03-22 | 2005-01-25 | Kelsey-Hayes Company | Thermally actuated microvalve device |
US6505811B1 (en) | 2000-06-27 | 2003-01-14 | Kelsey-Hayes Company | High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate |
US6822318B2 (en) * | 2001-05-14 | 2004-11-23 | Lightconnect, Inc. | Stress isolating die attach structure and method |
US7164585B2 (en) * | 2003-03-31 | 2007-01-16 | Intel Corporation | Thermal interface apparatus, systems, and methods |
US8011388B2 (en) * | 2003-11-24 | 2011-09-06 | Microstaq, INC | Thermally actuated microvalve with multiple fluid ports |
CA2546585A1 (fr) * | 2003-11-24 | 2005-06-09 | Alumina Micro Llc | Dispositif de micro-vanne permettant de controler un compresseur a deplacement variable |
US20070251586A1 (en) * | 2003-11-24 | 2007-11-01 | Fuller Edward N | Electro-pneumatic control valve with microvalve pilot |
EP1723359A2 (fr) * | 2004-02-27 | 2006-11-22 | Alumina Micro LLC | Vanne a micro/macro plaque hybride |
US7803281B2 (en) * | 2004-03-05 | 2010-09-28 | Microstaq, Inc. | Selective bonding for forming a microvalve |
US7156365B2 (en) * | 2004-07-27 | 2007-01-02 | Kelsey-Hayes Company | Method of controlling microvalve actuator |
WO2006076386A1 (fr) * | 2005-01-14 | 2006-07-20 | Alumina Micro Llc. | Systeme et procede de commande d'un compresseur a debit variable |
US7265977B2 (en) * | 2005-01-18 | 2007-09-04 | International Business Machines Corporation | Active liquid metal thermal spreader |
US7239517B2 (en) * | 2005-04-11 | 2007-07-03 | Intel Corporation | Integrated heat spreader and method for using |
CN101617155B (zh) | 2006-12-15 | 2012-03-21 | 麦克罗斯塔克公司 | 微阀装置 |
DE112008000862T5 (de) | 2007-03-30 | 2010-03-11 | Microstaq, Inc., Austin | Vorgesteuertes Mikroschieberventil |
US8387659B2 (en) | 2007-03-31 | 2013-03-05 | Dunan Microstaq, Inc. | Pilot operated spool valve |
CN102164846B (zh) * | 2008-08-09 | 2016-03-30 | 盾安美斯泰克公司(美国) | 改进的微型阀装置 |
US8113482B2 (en) * | 2008-08-12 | 2012-02-14 | DunAn Microstaq | Microvalve device with improved fluid routing |
US8540207B2 (en) | 2008-12-06 | 2013-09-24 | Dunan Microstaq, Inc. | Fluid flow control assembly |
US7961469B2 (en) * | 2009-03-31 | 2011-06-14 | Apple Inc. | Method and apparatus for distributing a thermal interface material |
WO2010117874A2 (fr) | 2009-04-05 | 2010-10-14 | Microstaq, Inc. | Procédé et structure pour optimiser la performance d'un échangeur de chaleur |
WO2011022267A2 (fr) | 2009-08-17 | 2011-02-24 | Microstaq, Inc. | Dispositif micro-usiné et procédé de commande |
CN102812538B (zh) | 2010-01-28 | 2015-05-13 | 盾安美斯泰克股份有限公司 | 用以促进接合的重调节半导体表面的方法 |
WO2011094300A2 (fr) | 2010-01-28 | 2011-08-04 | Microstaq, Inc. | Procédé et structure de liaison par fusion sélective haute température |
US8996141B1 (en) | 2010-08-26 | 2015-03-31 | Dunan Microstaq, Inc. | Adaptive predictive functional controller |
JP5631775B2 (ja) * | 2011-02-24 | 2014-11-26 | 新光電気工業株式会社 | 複合めっき液 |
US8925793B2 (en) | 2012-01-05 | 2015-01-06 | Dunan Microstaq, Inc. | Method for making a solder joint |
US9140613B2 (en) | 2012-03-16 | 2015-09-22 | Zhejiang Dunan Hetian Metal Co., Ltd. | Superheat sensor |
US9188375B2 (en) | 2013-12-04 | 2015-11-17 | Zhejiang Dunan Hetian Metal Co., Ltd. | Control element and check valve assembly |
RU2721950C2 (ru) * | 2015-10-06 | 2020-05-25 | Линде Акциенгезельшафт | Торцевые пластины с поверхностной структурой для пластинчатых теплообменников |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3311798A (en) * | 1963-09-27 | 1967-03-28 | Trw Semiconductors Inc | Component package |
GB1004020A (en) * | 1964-04-24 | 1965-09-08 | Standard Telephones Cables Ltd | Improvements in or relating to the mounting of electrical components |
US3706915A (en) * | 1970-03-09 | 1972-12-19 | Gen Electric | Semiconductor device with low impedance bond |
DE2060933C3 (de) * | 1970-12-10 | 1978-08-31 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Sockel für ein Halbleiterbauelementgehäuse und Verfahren zu seiner Herstellung |
-
1973
- 1973-09-12 US US396565A patent/US3860949A/en not_active Expired - Lifetime
-
1974
- 1974-07-18 IN IN1601/CAL/74A patent/IN142824B/en unknown
- 1974-08-14 CA CA207,033A patent/CA1001326A/en not_active Expired
- 1974-08-28 IT IT26684/74A patent/IT1020252B/it active
- 1974-09-03 GB GB3842874A patent/GB1440545A/en not_active Expired
- 1974-09-03 DE DE2442159A patent/DE2442159A1/de not_active Ceased
- 1974-09-05 FR FR7430208A patent/FR2243242B1/fr not_active Expired
- 1974-09-05 NL NL7411774A patent/NL7411774A/xx unknown
- 1974-09-06 BR BR7411/74A patent/BR7407411D0/pt unknown
- 1974-09-09 YU YU2431/74A patent/YU37042B/xx unknown
- 1974-09-09 BE BE148352A patent/BE819707A/fr unknown
- 1974-09-11 JP JP49105461A patent/JPS5057579A/ja active Pending
- 1974-09-11 SE SE7411472A patent/SE403851B/xx not_active IP Right Cessation
-
1977
- 1977-12-19 JP JP1977171800U patent/JPS5392385U/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5392385U (fr) | 1978-07-28 |
YU37042B (en) | 1984-08-31 |
FR2243242B1 (fr) | 1978-09-15 |
AU7304474A (en) | 1976-03-11 |
IT1020252B (it) | 1977-12-20 |
JPS5057579A (fr) | 1975-05-20 |
YU243174A (en) | 1982-06-18 |
SE7411472L (fr) | 1975-03-13 |
DE2442159A1 (de) | 1975-03-13 |
IN142824B (fr) | 1977-08-27 |
BR7407411D0 (pt) | 1975-07-08 |
NL7411774A (nl) | 1975-03-14 |
US3860949A (en) | 1975-01-14 |
GB1440545A (en) | 1976-06-23 |
FR2243242A1 (fr) | 1975-04-04 |
CA1001326A (en) | 1976-12-07 |
SE403851B (sv) | 1978-09-04 |
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