NL194314C - Foto-elektrisch omzettingssysteem. - Google Patents
Foto-elektrisch omzettingssysteem. Download PDFInfo
- Publication number
- NL194314C NL194314C NL9301775A NL9301775A NL194314C NL 194314 C NL194314 C NL 194314C NL 9301775 A NL9301775 A NL 9301775A NL 9301775 A NL9301775 A NL 9301775A NL 194314 C NL194314 C NL 194314C
- Authority
- NL
- Netherlands
- Prior art keywords
- voltage
- state
- semiconductor layer
- gate electrode
- photosensor
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 33
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000005286 illumination Methods 0.000 claims description 45
- 238000010586 diagram Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 230000000717 retained effect Effects 0.000 claims 4
- 238000001514 detection method Methods 0.000 claims 2
- 238000010276 construction Methods 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 16
- 230000005684 electric field Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- VZUGBLTVBZJZOE-KRWDZBQOSA-N n-[3-[(4s)-2-amino-1,4-dimethyl-6-oxo-5h-pyrimidin-4-yl]phenyl]-5-chloropyrimidine-2-carboxamide Chemical compound N1=C(N)N(C)C(=O)C[C@@]1(C)C1=CC=CC(NC(=O)C=2N=CC(Cl)=CN=2)=C1 VZUGBLTVBZJZOE-KRWDZBQOSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4304587A JP3019632B2 (ja) | 1992-10-16 | 1992-10-16 | フォトセンサシステム及びその駆動方法 |
| JP30458792 | 1992-10-16 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL9301775A NL9301775A (nl) | 1994-05-16 |
| NL194314B NL194314B (nl) | 2001-08-01 |
| NL194314C true NL194314C (nl) | 2001-12-04 |
Family
ID=17934795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9301775A NL194314C (nl) | 1992-10-16 | 1993-10-14 | Foto-elektrisch omzettingssysteem. |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US5463420A (ja) |
| JP (1) | JP3019632B2 (ja) |
| KR (1) | KR970007134B1 (ja) |
| NL (1) | NL194314C (ja) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3019632B2 (ja) * | 1992-10-16 | 2000-03-13 | カシオ計算機株式会社 | フォトセンサシステム及びその駆動方法 |
| US6021172A (en) * | 1994-01-28 | 2000-02-01 | California Institute Of Technology | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter |
| JP3089971B2 (ja) * | 1995-01-20 | 2000-09-18 | カシオ計算機株式会社 | 光電変換素子の駆動方法 |
| JP3416351B2 (ja) * | 1995-09-28 | 2003-06-16 | キヤノン株式会社 | 光電変換装置及びその駆動方法、それを用いたｘ線撮像装置及びその駆動方法 |
| US6310683B1 (en) | 1997-08-05 | 2001-10-30 | Casio Computer Co., Ltd. | Apparatus for reading fingerprint |
| EP1040650B1 (en) * | 1997-12-18 | 2001-07-04 | Simage Oy | Device for imaging radiation |
| US6020581A (en) * | 1998-02-24 | 2000-02-01 | International Business Machines Corporation | Solid state CMOS imager using silicon-on-insulator or bulk silicon |
| JP2000131444A (ja) * | 1998-10-28 | 2000-05-12 | Canon Inc | 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法 |
| KR100382975B1 (ko) | 1999-04-09 | 2003-05-09 | 가시오게산키 가부시키가이샤 | 광센서 시스템에 대한 구동 제어 방법 |
| EA003343B1 (ru) * | 1999-08-02 | 2003-04-24 | Касио Компьютер Ко., Лтд. | Фотодатчик и система фотодатчиков |
| US6888571B1 (en) | 1999-09-27 | 2005-05-03 | Casio Computer Co., Ltd. | Photosensor system and drive control method thereof |
| AU756561B2 (en) | 1999-11-08 | 2003-01-16 | Casio Computer Co., Ltd. | Photosensor system and drive control method thereof |
| US6867811B2 (en) * | 1999-11-08 | 2005-03-15 | Casio Computer Co., Ltd. | Photosensor system and drive control method thereof |
| JP3455761B2 (ja) | 1999-11-10 | 2003-10-14 | カシオ計算機株式会社 | フォトセンサシステムの感度調整装置及びその感度調整方法 |
| US6566685B2 (en) * | 2000-04-12 | 2003-05-20 | Casio Computer Co., Ltd. | Double gate photo sensor array |
| ATE506807T1 (de) * | 2001-06-18 | 2011-05-15 | Casio Computer Co Ltd | Photosensorsystem und ansteuerungsverfahren dafür |
| US6765187B2 (en) * | 2001-06-27 | 2004-07-20 | Canon Kabushiki Kaisha | Imaging apparatus |
| JP4154874B2 (ja) * | 2001-07-30 | 2008-09-24 | カシオ計算機株式会社 | 指紋読取装置および指紋読取方法 |
| JP4019250B2 (ja) * | 2001-11-14 | 2007-12-12 | カシオ計算機株式会社 | フォトセンサシステム及びフォトセンサシステムにおけるフォトセンサの駆動制御方法 |
| JP2003332560A (ja) * | 2002-05-13 | 2003-11-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及びマイクロプロセッサ |
| JP4342774B2 (ja) | 2002-07-10 | 2009-10-14 | シャープ株式会社 | 光電変換量検出方法および光電変換装置、画像入力方法および画像入力装置、２次元イメージセンサおよび２次元イメージセンサの駆動方法 |
| JP4373063B2 (ja) | 2002-09-02 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
| JP4094386B2 (ja) * | 2002-09-02 | 2008-06-04 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
| AU2003290429A1 (en) * | 2002-12-25 | 2004-07-22 | Casio Computer Co., Ltd. | Optical dna sensor, dna reading apparatus, identification method of dna and manufacturing method of optical dna sensor |
| JP4574118B2 (ja) * | 2003-02-12 | 2010-11-04 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| JP2007060070A (ja) * | 2005-08-23 | 2007-03-08 | Casio Comput Co Ltd | 画像読取装置及びその駆動制御方法 |
| US20080070423A1 (en) * | 2006-09-15 | 2008-03-20 | Crowder Mark A | Buried seed one-shot interlevel crystallization |
| US20090078940A1 (en) * | 2007-09-26 | 2009-03-26 | Sharp Laboratories Of America, Inc. | Location-controlled crystal seeding |
| US20120074474A1 (en) * | 2009-06-26 | 2012-03-29 | Sharp Kabushiki Kaisha | Phototransistor and display device including the same |
| WO2011089833A1 (en) * | 2010-01-20 | 2011-07-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US9024367B2 (en) * | 2012-02-24 | 2015-05-05 | The Regents Of The University Of California | Field-effect P-N junction |
| CN104576810B (zh) * | 2014-08-12 | 2016-04-20 | 深圳市芯思杰联邦国际科技发展有限公司 | 共面电极模拟光电探测器芯片及其制作方法 |
| JP6814429B2 (ja) * | 2015-08-10 | 2021-01-20 | 天馬微電子有限公司 | 光センサ素子及び光電変換装置 |
| RU2617881C2 (ru) * | 2015-10-22 | 2017-04-28 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский технологический университет "МИСиС" | Интегральная схема быстродействующего матричного приемника оптических излучений |
| CN109860328B (zh) * | 2019-03-07 | 2020-11-24 | 昆山龙腾光电股份有限公司 | 光传感器及其制作方法和显示装置 |
| US11830904B2 (en) * | 2020-07-08 | 2023-11-28 | Hannstouch Solution Incorporated | Light sensing device having offset gate electrode and light sensing panel and light sensing display panel using the same |
| CN113421942B (zh) * | 2021-05-13 | 2022-11-29 | 北京大学深圳研究生院 | 光电探测晶体管及其制造方法及相应的光电探测方法 |
| CN113363343A (zh) * | 2021-05-31 | 2021-09-07 | Tcl华星光电技术有限公司 | 半导体器件和感光装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58120379A (ja) * | 1982-01-11 | 1983-07-18 | Olympus Optical Co Ltd | 固体撮像装置 |
| USRE34309E (en) * | 1984-12-26 | 1993-07-13 | Canon Kabushiki Kaisha | Image sensor device having plural photoelectric converting elements |
| JPS62104074A (ja) * | 1985-10-30 | 1987-05-14 | Fuji Photo Film Co Ltd | 固体撮像素子 |
| JPS62198155A (ja) * | 1986-02-26 | 1987-09-01 | Matsushita Electric Ind Co Ltd | 薄膜イメ−ジセンサ |
| JPS62203365A (ja) * | 1986-03-03 | 1987-09-08 | Seiko Epson Corp | 固体撮像装置 |
| US4959723A (en) * | 1987-11-06 | 1990-09-25 | Canon Kabushiki Kaisha | Solid state image pickup apparatus having multi-phase scanning pulse to read out accumulated signal |
| JP2817246B2 (ja) * | 1989-08-25 | 1998-10-30 | カシオ計算機株式会社 | フォトセンサ |
| JP3019632B2 (ja) * | 1992-10-16 | 2000-03-13 | カシオ計算機株式会社 | フォトセンサシステム及びその駆動方法 |
-
1992
- 1992-10-16 JP JP4304587A patent/JP3019632B2/ja not_active Expired - Lifetime
-
1993
- 1993-10-08 US US08/133,563 patent/US5463420A/en not_active Expired - Lifetime
- 1993-10-14 NL NL9301775A patent/NL194314C/nl not_active IP Right Cessation
- 1993-10-16 KR KR1019930021566A patent/KR970007134B1/ko not_active IP Right Cessation
-
1995
- 1995-05-22 US US08/446,404 patent/US5583570A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR940010403A (ko) | 1994-05-26 |
| JP3019632B2 (ja) | 2000-03-13 |
| NL194314B (nl) | 2001-08-01 |
| JPH06132560A (ja) | 1994-05-13 |
| KR970007134B1 (ko) | 1997-05-02 |
| NL9301775A (nl) | 1994-05-16 |
| US5463420A (en) | 1995-10-31 |
| US5583570A (en) | 1996-12-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20080501 |
|
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20130501 |