NL193008C - Waarneem-versterkeraandrijfelement voor een geheugeninrichting. - Google Patents

Waarneem-versterkeraandrijfelement voor een geheugeninrichting. Download PDF

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Publication number
NL193008C
NL193008C NL8901303A NL8901303A NL193008C NL 193008 C NL193008 C NL 193008C NL 8901303 A NL8901303 A NL 8901303A NL 8901303 A NL8901303 A NL 8901303A NL 193008 C NL193008 C NL 193008C
Authority
NL
Netherlands
Prior art keywords
channel mos
mos transistor
inverter
clock
transistor
Prior art date
Application number
NL8901303A
Other languages
English (en)
Dutch (nl)
Other versions
NL193008B (nl
NL8901303A (nl
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of NL8901303A publication Critical patent/NL8901303A/nl
Publication of NL193008B publication Critical patent/NL193008B/xx
Application granted granted Critical
Publication of NL193008C publication Critical patent/NL193008C/nl

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
NL8901303A 1988-07-11 1989-05-24 Waarneem-versterkeraandrijfelement voor een geheugeninrichting. NL193008C (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019880008607A KR910002033B1 (ko) 1988-07-11 1988-07-11 메모리 셀의 센스앰프 구동회로
KR880008607 1988-07-11

Publications (3)

Publication Number Publication Date
NL8901303A NL8901303A (nl) 1990-02-01
NL193008B NL193008B (nl) 1998-03-02
NL193008C true NL193008C (nl) 1998-07-03

Family

ID=19275985

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8901303A NL193008C (nl) 1988-07-11 1989-05-24 Waarneem-versterkeraandrijfelement voor een geheugeninrichting.

Country Status (7)

Country Link
US (1) US5140199A (enrdf_load_stackoverflow)
JP (1) JPH0752585B2 (enrdf_load_stackoverflow)
KR (1) KR910002033B1 (enrdf_load_stackoverflow)
DE (1) DE3916972A1 (enrdf_load_stackoverflow)
FR (1) FR2634047B1 (enrdf_load_stackoverflow)
GB (1) GB2220810B (enrdf_load_stackoverflow)
NL (1) NL193008C (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR920001325B1 (ko) * 1989-06-10 1992-02-10 삼성전자 주식회사 메모리 소자내의 센스 앰프 드라이버
JP2789779B2 (ja) * 1990-04-14 1998-08-20 日本電気株式会社 メモリ装置
US5210450A (en) * 1990-04-16 1993-05-11 Tektronix, Inc. Active selectable digital delay circuit
FR2662844B1 (fr) * 1990-05-23 1993-11-26 Samsung Electronics Co Ltd Circuit d'attaque d'amplification de detection pour dispositif de memoire a semi-conducteurs.
KR920010346B1 (ko) * 1990-05-23 1992-11-27 삼성전자 주식회사 반도체 메모리의 센스앰프 구동회로
DE4205061C2 (de) * 1991-02-19 2000-04-06 Toshiba Kawasaki Kk Nichtflüchtige Halbleiter-Speicheranordnung
US5220221A (en) * 1992-03-06 1993-06-15 Micron Technology, Inc. Sense amplifier pulldown circuit for minimizing ground noise at high power supply voltages
US5394037A (en) * 1993-04-05 1995-02-28 Lattice Semiconductor Corporation Sense amplifiers and sensing methods
KR960009956B1 (ko) * 1994-02-16 1996-07-25 현대전자산업 주식회사 반도체 소자의 감지 증폭기
KR0122108B1 (ko) * 1994-06-10 1997-12-05 윤종용 반도체 메모리 장치의 비트라인 센싱회로 및 그 방법
US5528178A (en) * 1995-03-31 1996-06-18 International Business Machines Corporation Sense and hold amplifier
US5760626A (en) * 1996-04-01 1998-06-02 Motorola Inc. BICMOS latch circuit for latching differential signals
JP3228154B2 (ja) * 1996-10-18 2001-11-12 日本電気株式会社 半導体記憶装置
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US6195302B1 (en) 1999-02-05 2001-02-27 United Memories, Inc. Dual slope sense clock generator
KR100546333B1 (ko) * 2003-06-25 2006-01-26 삼성전자주식회사 감지 증폭기 드라이버 및 이를 구비하는 반도체 장치
RU2388077C1 (ru) * 2008-07-22 2010-04-27 Государственное образовательное учреждение высшего профессионального образования Московский технический университет связи и информатики Усилитель считывания сигналов с магнитных карт

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3943496A (en) * 1974-09-09 1976-03-09 Rockwell International Corporation Memory clocking system
JPS5429936A (en) * 1977-08-10 1979-03-06 Hitachi Ltd Pre-amplifier
US4295062A (en) * 1979-04-02 1981-10-13 National Semiconductor Corporation CMOS Schmitt trigger and oscillator
JPS58156226A (ja) * 1982-03-12 1983-09-17 Hitachi Ltd 遅延回路
US4508978A (en) * 1982-09-16 1985-04-02 Texas Instruments Incorporated Reduction of gate oxide breakdown for booted nodes in MOS integrated circuits
JPS6070592A (ja) * 1983-09-28 1985-04-22 Fujitsu Ltd メモリの書込回路
US4707626A (en) * 1984-07-26 1987-11-17 Texas Instruments Incorporated Internal time-out circuit for CMOS dynamic RAM
US4656612A (en) * 1984-11-19 1987-04-07 Inmos Corporation Dram current control technique
JPS61178796A (ja) * 1985-02-01 1986-08-11 Mitsubishi Electric Corp Icメモリ
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
US4638187A (en) * 1985-10-01 1987-01-20 Vtc Incorporated CMOS output buffer providing high drive current with minimum output signal distortion
US4649295A (en) * 1986-01-13 1987-03-10 Motorola, Inc. BIMOS logic gate
US4749882A (en) * 1986-07-25 1988-06-07 Digital Equipment Corporation Apparatus and method for applying rapid transient signals to components on a printed circuit board
US4771195A (en) * 1986-08-29 1988-09-13 Texas Instruments Incorporated Integrated circuit to reduce switching noise
JP2557411B2 (ja) * 1986-10-01 1996-11-27 株式会社東芝 半導体集積回路
JPS63275223A (ja) * 1987-05-06 1988-11-11 Nec Corp 出力バツフア−回路
US4829199A (en) * 1987-07-13 1989-05-09 Ncr Corporation Driver circuit providing load and time adaptive current
US4855623A (en) * 1987-11-05 1989-08-08 Texas Instruments Incorporated Output buffer having programmable drive current

Also Published As

Publication number Publication date
FR2634047B1 (fr) 1993-04-09
JPH0752585B2 (ja) 1995-06-05
US5140199A (en) 1992-08-18
DE3916972C2 (enrdf_load_stackoverflow) 1991-02-14
JPH0261892A (ja) 1990-03-01
GB2220810B (en) 1992-07-15
DE3916972A1 (de) 1990-01-18
NL193008B (nl) 1998-03-02
HK1000029A1 (en) 1997-10-09
GB8913761D0 (en) 1989-08-02
NL8901303A (nl) 1990-02-01
GB2220810A (en) 1990-01-17
FR2634047A1 (fr) 1990-01-12
KR900002323A (ko) 1990-02-28
KR910002033B1 (ko) 1991-03-30

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Discontinued because of reaching the maximum lifetime of a patent

Effective date: 20090524