NL193008C - Waarneem-versterkeraandrijfelement voor een geheugeninrichting. - Google Patents
Waarneem-versterkeraandrijfelement voor een geheugeninrichting. Download PDFInfo
- Publication number
- NL193008C NL193008C NL8901303A NL8901303A NL193008C NL 193008 C NL193008 C NL 193008C NL 8901303 A NL8901303 A NL 8901303A NL 8901303 A NL8901303 A NL 8901303A NL 193008 C NL193008 C NL 193008C
- Authority
- NL
- Netherlands
- Prior art keywords
- channel mos
- mos transistor
- inverter
- clock
- transistor
- Prior art date
Links
- 238000011084 recovery Methods 0.000 claims description 40
- 229910004441 Ta−Tc Inorganic materials 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 9
- 230000003111 delayed effect Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 claims description 2
- 230000001934 delay Effects 0.000 claims 1
- 230000021715 photosynthesis, light harvesting Effects 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 101000658739 Homo sapiens Tetraspanin-2 Proteins 0.000 description 4
- 101000659879 Homo sapiens Thrombospondin-1 Proteins 0.000 description 4
- 101000633605 Homo sapiens Thrombospondin-2 Proteins 0.000 description 4
- 101150013977 TSN1 gene Proteins 0.000 description 4
- 102100035873 Tetraspanin-2 Human genes 0.000 description 4
- 102100036034 Thrombospondin-1 Human genes 0.000 description 4
- 102100029529 Thrombospondin-2 Human genes 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019880008607A KR910002033B1 (ko) | 1988-07-11 | 1988-07-11 | 메모리 셀의 센스앰프 구동회로 |
KR880008607 | 1988-07-11 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8901303A NL8901303A (nl) | 1990-02-01 |
NL193008B NL193008B (nl) | 1998-03-02 |
NL193008C true NL193008C (nl) | 1998-07-03 |
Family
ID=19275985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8901303A NL193008C (nl) | 1988-07-11 | 1989-05-24 | Waarneem-versterkeraandrijfelement voor een geheugeninrichting. |
Country Status (7)
Country | Link |
---|---|
US (1) | US5140199A (enrdf_load_stackoverflow) |
JP (1) | JPH0752585B2 (enrdf_load_stackoverflow) |
KR (1) | KR910002033B1 (enrdf_load_stackoverflow) |
DE (1) | DE3916972A1 (enrdf_load_stackoverflow) |
FR (1) | FR2634047B1 (enrdf_load_stackoverflow) |
GB (1) | GB2220810B (enrdf_load_stackoverflow) |
NL (1) | NL193008C (enrdf_load_stackoverflow) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR920001325B1 (ko) * | 1989-06-10 | 1992-02-10 | 삼성전자 주식회사 | 메모리 소자내의 센스 앰프 드라이버 |
JP2789779B2 (ja) * | 1990-04-14 | 1998-08-20 | 日本電気株式会社 | メモリ装置 |
US5210450A (en) * | 1990-04-16 | 1993-05-11 | Tektronix, Inc. | Active selectable digital delay circuit |
FR2662844B1 (fr) * | 1990-05-23 | 1993-11-26 | Samsung Electronics Co Ltd | Circuit d'attaque d'amplification de detection pour dispositif de memoire a semi-conducteurs. |
KR920010346B1 (ko) * | 1990-05-23 | 1992-11-27 | 삼성전자 주식회사 | 반도체 메모리의 센스앰프 구동회로 |
DE4205061C2 (de) * | 1991-02-19 | 2000-04-06 | Toshiba Kawasaki Kk | Nichtflüchtige Halbleiter-Speicheranordnung |
US5220221A (en) * | 1992-03-06 | 1993-06-15 | Micron Technology, Inc. | Sense amplifier pulldown circuit for minimizing ground noise at high power supply voltages |
US5394037A (en) * | 1993-04-05 | 1995-02-28 | Lattice Semiconductor Corporation | Sense amplifiers and sensing methods |
KR960009956B1 (ko) * | 1994-02-16 | 1996-07-25 | 현대전자산업 주식회사 | 반도체 소자의 감지 증폭기 |
KR0122108B1 (ko) * | 1994-06-10 | 1997-12-05 | 윤종용 | 반도체 메모리 장치의 비트라인 센싱회로 및 그 방법 |
US5528178A (en) * | 1995-03-31 | 1996-06-18 | International Business Machines Corporation | Sense and hold amplifier |
US5760626A (en) * | 1996-04-01 | 1998-06-02 | Motorola Inc. | BICMOS latch circuit for latching differential signals |
JP3228154B2 (ja) * | 1996-10-18 | 2001-11-12 | 日本電気株式会社 | 半導体記憶装置 |
US6002634A (en) * | 1997-11-14 | 1999-12-14 | Ramtron International Corporation | Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory |
US6195302B1 (en) | 1999-02-05 | 2001-02-27 | United Memories, Inc. | Dual slope sense clock generator |
KR100546333B1 (ko) * | 2003-06-25 | 2006-01-26 | 삼성전자주식회사 | 감지 증폭기 드라이버 및 이를 구비하는 반도체 장치 |
RU2388077C1 (ru) * | 2008-07-22 | 2010-04-27 | Государственное образовательное учреждение высшего профессионального образования Московский технический университет связи и информатики | Усилитель считывания сигналов с магнитных карт |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3943496A (en) * | 1974-09-09 | 1976-03-09 | Rockwell International Corporation | Memory clocking system |
JPS5429936A (en) * | 1977-08-10 | 1979-03-06 | Hitachi Ltd | Pre-amplifier |
US4295062A (en) * | 1979-04-02 | 1981-10-13 | National Semiconductor Corporation | CMOS Schmitt trigger and oscillator |
JPS58156226A (ja) * | 1982-03-12 | 1983-09-17 | Hitachi Ltd | 遅延回路 |
US4508978A (en) * | 1982-09-16 | 1985-04-02 | Texas Instruments Incorporated | Reduction of gate oxide breakdown for booted nodes in MOS integrated circuits |
JPS6070592A (ja) * | 1983-09-28 | 1985-04-22 | Fujitsu Ltd | メモリの書込回路 |
US4707626A (en) * | 1984-07-26 | 1987-11-17 | Texas Instruments Incorporated | Internal time-out circuit for CMOS dynamic RAM |
US4656612A (en) * | 1984-11-19 | 1987-04-07 | Inmos Corporation | Dram current control technique |
JPS61178796A (ja) * | 1985-02-01 | 1986-08-11 | Mitsubishi Electric Corp | Icメモリ |
US4694205A (en) * | 1985-06-03 | 1987-09-15 | Advanced Micro Devices, Inc. | Midpoint sense amplification scheme for a CMOS DRAM |
US4638187A (en) * | 1985-10-01 | 1987-01-20 | Vtc Incorporated | CMOS output buffer providing high drive current with minimum output signal distortion |
US4649295A (en) * | 1986-01-13 | 1987-03-10 | Motorola, Inc. | BIMOS logic gate |
US4749882A (en) * | 1986-07-25 | 1988-06-07 | Digital Equipment Corporation | Apparatus and method for applying rapid transient signals to components on a printed circuit board |
US4771195A (en) * | 1986-08-29 | 1988-09-13 | Texas Instruments Incorporated | Integrated circuit to reduce switching noise |
JP2557411B2 (ja) * | 1986-10-01 | 1996-11-27 | 株式会社東芝 | 半導体集積回路 |
JPS63275223A (ja) * | 1987-05-06 | 1988-11-11 | Nec Corp | 出力バツフア−回路 |
US4829199A (en) * | 1987-07-13 | 1989-05-09 | Ncr Corporation | Driver circuit providing load and time adaptive current |
US4855623A (en) * | 1987-11-05 | 1989-08-08 | Texas Instruments Incorporated | Output buffer having programmable drive current |
-
1988
- 1988-07-11 KR KR1019880008607A patent/KR910002033B1/ko not_active Expired
-
1989
- 1989-05-23 FR FR8906746A patent/FR2634047B1/fr not_active Expired - Lifetime
- 1989-05-24 JP JP1129029A patent/JPH0752585B2/ja not_active Expired - Lifetime
- 1989-05-24 NL NL8901303A patent/NL193008C/nl not_active IP Right Cessation
- 1989-05-24 DE DE3916972A patent/DE3916972A1/de active Granted
- 1989-05-30 US US07/358,679 patent/US5140199A/en not_active Expired - Lifetime
- 1989-06-15 GB GB8913761A patent/GB2220810B/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2634047B1 (fr) | 1993-04-09 |
JPH0752585B2 (ja) | 1995-06-05 |
US5140199A (en) | 1992-08-18 |
DE3916972C2 (enrdf_load_stackoverflow) | 1991-02-14 |
JPH0261892A (ja) | 1990-03-01 |
GB2220810B (en) | 1992-07-15 |
DE3916972A1 (de) | 1990-01-18 |
NL193008B (nl) | 1998-03-02 |
HK1000029A1 (en) | 1997-10-09 |
GB8913761D0 (en) | 1989-08-02 |
NL8901303A (nl) | 1990-02-01 |
GB2220810A (en) | 1990-01-17 |
FR2634047A1 (fr) | 1990-01-12 |
KR900002323A (ko) | 1990-02-28 |
KR910002033B1 (ko) | 1991-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20090524 |