NL190331A - - Google Patents
Info
- Publication number
- NL190331A NL190331A NL190331DA NL190331A NL 190331 A NL190331 A NL 190331A NL 190331D A NL190331D A NL 190331DA NL 190331 A NL190331 A NL 190331A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
- Y10T428/12833—Alternative to or next to each other
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12889—Au-base component
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL820621X | 1954-08-26 | ||
US52876255A | 1955-08-16 | 1955-08-16 | |
US718872A US2990502A (en) | 1954-08-26 | 1958-03-03 | Method of alloying a rectifying connection to a semi-conductive member, and semi-conductive devices made by said method |
Publications (1)
Publication Number | Publication Date |
---|---|
NL190331A true NL190331A (sv) | 1900-01-01 |
Family
ID=32397777
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL190331D NL190331A (sv) | 1954-08-26 | ||
NL98125D NL98125C (sv) | 1954-08-26 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL98125D NL98125C (sv) | 1954-08-26 |
Country Status (5)
Country | Link |
---|---|
US (1) | US2990502A (sv) |
BE (1) | BE540780A (sv) |
DE (1) | DE1018557B (sv) |
GB (1) | GB820621A (sv) |
NL (2) | NL98125C (sv) |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1195868B (de) * | 1957-01-23 | 1965-07-01 | Siemens Ag | Verfahren zum Herstellen eines elektrischen Halbleiterbauelementes mit einkristallinem Halbleiterkoerper |
DE1160548B (de) * | 1957-12-18 | 1964-01-02 | Siemens Ag | Verfahren zum Dotieren von halbleitendem Germanium oder Silizium mit Schwefel |
FR1214352A (fr) * | 1957-12-23 | 1960-04-08 | Hughes Aircraft Co | Dispositif semi-conducteur et procédé pour le fabriquer |
BE575275A (sv) * | 1958-02-03 | 1900-01-01 | ||
NL239159A (sv) * | 1958-08-08 | |||
US3109225A (en) * | 1958-08-29 | 1963-11-05 | Rca Corp | Method of mounting a semiconductor device |
NL243222A (sv) * | 1958-09-10 | 1900-01-01 | ||
DE1100818B (de) * | 1958-09-24 | 1961-03-02 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit einem einkristallinen scheiben-foermigen Grundkoerper aus Silizium |
NL242265A (sv) * | 1958-09-30 | 1900-01-01 | ||
GB907268A (en) * | 1958-11-14 | 1962-10-03 | Sarkes Tarzian | A method of making a semi-conductor diode |
DE1292259B (de) * | 1959-02-04 | 1969-04-10 | Telefunken Patent | Verfahren zum Herstellen von Transistoren durch Legieren |
US3063879A (en) * | 1959-02-26 | 1962-11-13 | Westinghouse Electric Corp | Configuration for semiconductor devices |
DE1233949B (de) * | 1959-07-13 | 1967-02-09 | Siemens Ag | Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper |
NL254841A (sv) * | 1959-08-14 | 1900-01-01 | ||
GB918755A (en) * | 1959-09-21 | 1963-02-20 | Ass Elect Ind | Semi-conductor devices |
NL249694A (sv) * | 1959-12-30 | |||
DE1113523B (de) * | 1960-02-18 | 1961-09-07 | Siemens Ag | Verfahren zur Herstellung eines Anschlusses an einer Halbleiter-anordnung |
DE1116827B (de) * | 1960-03-11 | 1961-11-09 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einer Legierungselektrode |
NL269346A (sv) * | 1960-09-20 | |||
DE1133834B (de) * | 1960-09-21 | 1962-07-26 | Siemens Ag | Siliziumgleichrichter und Verfahren zu dessen Herstellung |
DE1175797B (de) * | 1960-12-22 | 1964-08-13 | Standard Elektrik Lorenz Ag | Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen |
DE1191044B (de) * | 1960-12-03 | 1965-04-15 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen, wie Silizium-Flaechengleichrichter, -Transistoren oder Halbleiterstromtore |
NL268503A (sv) * | 1960-12-09 | |||
DE1130524B (de) * | 1961-02-22 | 1962-05-30 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch Anlegieren von Elektroden und einer Traegerplattenanordnung an einen Halbleiterkoerper und Form zur Durchfuehrung des Verfahrens |
DE1228002B (de) * | 1961-03-07 | 1966-11-03 | Gerhard Gille Dr Ing | Trockengleichrichter |
DE1141386B (de) * | 1961-04-26 | 1962-12-20 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
DE1178148B (de) * | 1961-06-20 | 1964-09-17 | Siemens Ag | Verfahren zur Vorbereitung von elektrischen Halbleiteranordnungen mit einlegierten Elekt-troden fuer das Anbringen von elektrischen An-schlussleitern an diesen Elektroden |
DE1213055B (de) * | 1961-07-24 | 1966-03-24 | Siemens Ag | Halbleiteranordnung mit einem einkristallinen Halbleiterkoerper |
DE1240187B (de) * | 1961-08-10 | 1967-05-11 | Siemens Ag | Verfahren zur Herstellung eines sperrfreien Kontaktes durch Auflegieren von Aluminium |
DE1276210B (de) * | 1961-08-31 | 1968-08-29 | Siemens Ag | Halbleiterbauelement |
FR1350402A (fr) * | 1962-03-16 | 1964-01-24 | Gen Electric | Dispositifs à semiconducteurs et méthodes de fabrication |
CH396221A (de) * | 1962-03-30 | 1965-07-31 | Bbc Brown Boveri & Cie | Halbleiteranordnung |
DE1295697B (de) * | 1962-05-23 | 1969-05-22 | Walter Brandt Gmbh | Halbleiterbauelement und Verfahren zu seiner Herstellung |
DE1188207B (de) * | 1962-08-27 | 1965-03-04 | Intermetall | Verfahren zum Herstellen eines plattenfoermigen Koerpers von hoher elektrischer Leitfaehigkeit |
NL302321A (sv) * | 1963-02-08 | |||
US3342646A (en) * | 1963-02-19 | 1967-09-19 | Rca Corp | Thermoelectric generator including silicon germanium alloy thermoelements |
GB1054422A (sv) * | 1963-03-16 | 1900-01-01 | ||
DE1272457B (de) * | 1963-07-18 | 1968-07-11 | Philips Patentverwaltung | Verfahren zum Herstellen einer Halbleiteranordnung |
DE1639578B1 (de) * | 1963-12-06 | 1969-09-04 | Telefunken Patent | Verfahren zum Herstellen von Halbleiterbauelementen ohne stoerenden Thyristoreffekt |
US3375143A (en) * | 1964-09-29 | 1968-03-26 | Melpar Inc | Method of making tunnel diode |
DE1283969B (de) * | 1965-02-16 | 1968-11-28 | Itt Ind Gmbh Deutsche | Halbleiterbauelement mit elektrisch isolierendem Zwischenkoerper zwischen dem Halbleiterkoerper und einem Gehaeuseteil, sowie Verfahren zu seiner Herstellung |
DE1483298B1 (de) * | 1965-06-11 | 1971-01-28 | Siemens Ag | Elektrische Kontaktanordnung zwischen einem Germanium-Silizium-Halbleiterkoerper und einem Kontaktstueck und Verfahren zur Herstellung derselben |
CH426020A (de) * | 1965-09-08 | 1966-12-15 | Bbc Brown Boveri & Cie | Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement |
JPS5116264B2 (sv) * | 1971-10-01 | 1976-05-22 | ||
JPS5836817B2 (ja) * | 1976-05-17 | 1983-08-11 | 株式会社東芝 | X線けい光増倍管 |
US4381214A (en) * | 1980-06-26 | 1983-04-26 | The General Electric Company Limited | Process for growing crystals |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE500302A (sv) * | 1949-11-30 | |||
BE527420A (sv) * | 1953-03-20 | |||
US2702360A (en) * | 1953-04-30 | 1955-02-15 | Rca Corp | Semiconductor rectifier |
-
0
- NL NL190331D patent/NL190331A/xx unknown
- BE BE540780D patent/BE540780A/xx unknown
- NL NL98125D patent/NL98125C/xx active
-
1955
- 1955-08-20 DE DEN11085A patent/DE1018557B/de active Pending
- 1955-08-23 GB GB24249/55A patent/GB820621A/en not_active Expired
-
1958
- 1958-03-03 US US718872A patent/US2990502A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB820621A (en) | 1959-09-23 |
US2990502A (en) | 1961-06-27 |
DE1018557B (de) | 1957-10-31 |
NL98125C (sv) | 1900-01-01 |
BE540780A (sv) | 1900-01-01 |