NL186984C - Werkwijze voor het vervaardigen van een transistorinrichting. - Google Patents

Werkwijze voor het vervaardigen van een transistorinrichting.

Info

Publication number
NL186984C
NL186984C NLAANVRAGE7703224,A NL7703224A NL186984C NL 186984 C NL186984 C NL 186984C NL 7703224 A NL7703224 A NL 7703224A NL 186984 C NL186984 C NL 186984C
Authority
NL
Netherlands
Prior art keywords
manufacturing
transistor device
transistor
Prior art date
Application number
NLAANVRAGE7703224,A
Other languages
English (en)
Dutch (nl)
Other versions
NL7703224A (nl
NL186984B (nl
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of NL7703224A publication Critical patent/NL7703224A/xx
Publication of NL186984B publication Critical patent/NL186984B/xx
Application granted granted Critical
Publication of NL186984C publication Critical patent/NL186984C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
NLAANVRAGE7703224,A 1976-03-26 1977-03-24 Werkwijze voor het vervaardigen van een transistorinrichting. NL186984C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67118376A 1976-03-26 1976-03-26

Publications (3)

Publication Number Publication Date
NL7703224A NL7703224A (nl) 1977-09-28
NL186984B NL186984B (nl) 1990-11-16
NL186984C true NL186984C (nl) 1991-04-16

Family

ID=24693462

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7703224,A NL186984C (nl) 1976-03-26 1977-03-24 Werkwijze voor het vervaardigen van een transistorinrichting.

Country Status (6)

Country Link
US (1) US4115914A (enExample)
JP (1) JPS52144981A (enExample)
DE (1) DE2711895C2 (enExample)
FR (1) FR2345813A1 (enExample)
GB (1) GB1575960A (enExample)
NL (1) NL186984C (enExample)

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US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
US5144393A (en) * 1989-04-04 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Structure for a PSD type field effect transistor
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH0388370A (ja) * 1989-08-31 1991-04-12 Toshiba Corp 半導体記憶装置の製造方法
US5106772A (en) * 1990-01-09 1992-04-21 Intel Corporation Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide
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US5273921A (en) * 1991-12-27 1993-12-28 Purdue Research Foundation Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
KR100192391B1 (ko) * 1994-03-04 1999-06-15 구본준 전하전송자 인젝션 트랜지스터
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
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JP3366173B2 (ja) * 1995-07-31 2003-01-14 シャープ株式会社 不揮発性半導体メモリの製造方法
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US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
US5986931A (en) 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
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DE19926108C2 (de) * 1999-06-08 2001-06-28 Infineon Technologies Ag Nichtflüchtige Halbleiter-Speicherzelle mit einem Metalloxid-Dielektrikum und Verfahren zu deren Herstellung
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AU2002303933A1 (en) 2001-05-31 2002-12-09 Rochester Institute Of Technology Fluidic valves, agitators, and pumps and methods thereof
US7378775B2 (en) 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
US7211923B2 (en) 2001-10-26 2007-05-01 Nth Tech Corporation Rotational motion based, electrostatic power source and methods thereof
US6429109B1 (en) 2001-12-14 2002-08-06 Chartered Semiconductor Manufacturing Ltd Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate
US6821873B2 (en) * 2002-01-10 2004-11-23 Texas Instruments Incorporated Anneal sequence for high-κ film property optimization
US20040152296A1 (en) * 2003-02-04 2004-08-05 Texas Instruments Incorporated Hexamethyldisilazane treatment of low-k dielectric films
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US8581308B2 (en) 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
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Also Published As

Publication number Publication date
NL7703224A (nl) 1977-09-28
DE2711895A1 (de) 1977-10-06
JPS52144981A (en) 1977-12-02
DE2711895C2 (de) 1987-05-27
GB1575960A (en) 1980-10-01
US4115914A (en) 1978-09-26
NL186984B (nl) 1990-11-16
FR2345813B1 (enExample) 1980-11-21
FR2345813A1 (fr) 1977-10-21

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Legal Events

Date Code Title Description
BC A request for examination has been filed
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent

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