FR2345813B1 - - Google Patents

Info

Publication number
FR2345813B1
FR2345813B1 FR7709067A FR7709067A FR2345813B1 FR 2345813 B1 FR2345813 B1 FR 2345813B1 FR 7709067 A FR7709067 A FR 7709067A FR 7709067 A FR7709067 A FR 7709067A FR 2345813 B1 FR2345813 B1 FR 2345813B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7709067A
Other languages
French (fr)
Other versions
FR2345813A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of FR2345813A1 publication Critical patent/FR2345813A1/fr
Application granted granted Critical
Publication of FR2345813B1 publication Critical patent/FR2345813B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
FR7709067A 1976-03-26 1977-03-25 Procede de realisation d'elements de memoire a transistor a effet de champ Granted FR2345813A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67118376A 1976-03-26 1976-03-26

Publications (2)

Publication Number Publication Date
FR2345813A1 FR2345813A1 (fr) 1977-10-21
FR2345813B1 true FR2345813B1 (enExample) 1980-11-21

Family

ID=24693462

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7709067A Granted FR2345813A1 (fr) 1976-03-26 1977-03-25 Procede de realisation d'elements de memoire a transistor a effet de champ

Country Status (6)

Country Link
US (1) US4115914A (enExample)
JP (1) JPS52144981A (enExample)
DE (1) DE2711895C2 (enExample)
FR (1) FR2345813A1 (enExample)
GB (1) GB1575960A (enExample)
NL (1) NL186984C (enExample)

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JPS53124084A (en) 1977-04-06 1978-10-30 Hitachi Ltd Semiconductor memory device containing floating type poly silicon layer and its manufacture
US4212100A (en) * 1977-09-23 1980-07-15 Mos Technology, Inc. Stable N-channel MOS structure
DE2845328C2 (de) * 1978-10-18 1986-04-30 Deutsche Itt Industries Gmbh, 7800 Freiburg Speichertransistor
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DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle
US4257056A (en) * 1979-06-27 1981-03-17 National Semiconductor Corporation Electrically erasable read only memory
US4297719A (en) * 1979-08-10 1981-10-27 Rca Corporation Electrically programmable control gate injected floating gate solid state memory transistor and method of making same
US4253106A (en) * 1979-10-19 1981-02-24 Rca Corporation Gate injected floating gate memory device
US4334347A (en) * 1979-10-19 1982-06-15 Rca Corporation Method of forming an improved gate member for a gate injected floating gate memory device
US4268844A (en) * 1979-12-31 1981-05-19 The United States Of America As Represented By The Secretary Of The Navy Insulated gate field-effect transistors
JPS5931231B2 (ja) * 1980-01-31 1984-07-31 工業技術院長 浮遊ゲ−ト形不揮発性半導体メモリ
US4331968A (en) * 1980-03-17 1982-05-25 Mostek Corporation Three layer floating gate memory transistor with erase gate over field oxide region
US4361847A (en) * 1980-04-07 1982-11-30 Eliyahou Harari Non-volatile EPROM with enhanced drain overlap for increased efficiency
US4359698A (en) * 1980-07-09 1982-11-16 Ford Motor Company Reflecting type light modulator
DE3037744A1 (de) * 1980-10-06 1982-05-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer monolithisch integrierten zwei-transistor-speicherzelle in mos-technik
DE3174858D1 (en) * 1980-12-25 1986-07-24 Fujitsu Ltd Nonvolatile semiconductor memory device
JPS57162370A (en) * 1981-03-30 1982-10-06 Seiko Epson Corp Mos semiconductor memory device
DE3122382A1 (de) * 1981-06-05 1982-12-23 Ibm Deutschland Verfahren zum herstellen einer gateisolations-schichtstruktur und die verwendung einer solchen struktur
JPS587876A (ja) * 1981-07-07 1983-01-17 Nec Corp 電界効果トランジスタおよびその製造方法
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
US4535349A (en) * 1981-12-31 1985-08-13 International Business Machines Corporation Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing
US4490900A (en) * 1982-01-29 1985-01-01 Seeq Technology, Inc. Method of fabricating an MOS memory array having electrically-programmable and electrically-erasable storage devices incorporated therein
US4558344A (en) * 1982-01-29 1985-12-10 Seeq Technology, Inc. Electrically-programmable and electrically-erasable MOS memory device
US4442447A (en) * 1982-03-09 1984-04-10 Rca Corporation Electrically alterable nonvolatile floating gate memory device
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
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US4949154A (en) * 1983-02-23 1990-08-14 Texas Instruments, Incorporated Thin dielectrics over polysilicon
US4590503A (en) * 1983-07-21 1986-05-20 Honeywell Inc. Electrically erasable programmable read only memory
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
US4794565A (en) * 1986-09-15 1988-12-27 The Regents Of The University Of California Electrically programmable memory device employing source side injection
US5047981A (en) * 1988-07-15 1991-09-10 Texas Instruments Incorporated Bit and block erasing of an electrically erasable and programmable read-only memory array
US5144393A (en) * 1989-04-04 1992-09-01 Mitsubishi Denki Kabushiki Kaisha Structure for a PSD type field effect transistor
DE69033438T2 (de) 1989-04-13 2000-07-06 Sandisk Corp., Santa Clara Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH0388370A (ja) * 1989-08-31 1991-04-12 Toshiba Corp 半導体記憶装置の製造方法
US5106772A (en) * 1990-01-09 1992-04-21 Intel Corporation Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide
JPH04257270A (ja) * 1991-02-08 1992-09-11 Fujitsu Ltd 半導体記憶装置
US5273921A (en) * 1991-12-27 1993-12-28 Purdue Research Foundation Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
KR100192391B1 (ko) * 1994-03-04 1999-06-15 구본준 전하전송자 인젝션 트랜지스터
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
JP3878681B2 (ja) 1995-06-15 2007-02-07 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3366173B2 (ja) * 1995-07-31 2003-01-14 シャープ株式会社 不揮発性半導体メモリの製造方法
JPH10189920A (ja) * 1996-12-27 1998-07-21 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US5790455A (en) * 1997-01-02 1998-08-04 John Caywood Low voltage single supply CMOS electrically erasable read-only memory
US5986931A (en) 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5867425A (en) * 1997-04-11 1999-02-02 Wong; Ting-Wah Nonvolatile memory capable of using substrate hot electron injection
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
US6303942B1 (en) 1998-03-17 2001-10-16 Farmer, Ii Kenneth Rudolph Multi-layer charge injection barrier and uses thereof
US6087696A (en) * 1998-05-28 2000-07-11 Lattice Semiconductor Corp. Stacked tunneling dielectric technology for improving data retention of EEPROM cell
US6169306B1 (en) * 1998-07-27 2001-01-02 Advanced Micro Devices, Inc. Semiconductor devices comprised of one or more epitaxial layers
DE19926108C2 (de) * 1999-06-08 2001-06-28 Infineon Technologies Ag Nichtflüchtige Halbleiter-Speicherzelle mit einem Metalloxid-Dielektrikum und Verfahren zu deren Herstellung
DE19926500C2 (de) * 1999-06-10 2001-09-20 Infineon Technologies Ag Nichtflüchtige Halbleiter-Speicherzelle mit einer eine hohe relative Dielektrizitätskonstante aufweisenden dielektrischen Schicht und Verfahren zu deren Herstellung
JP2001094094A (ja) 1999-09-21 2001-04-06 Hitachi Ltd 半導体装置およびその製造方法
WO2002073673A1 (en) 2001-03-13 2002-09-19 Rochester Institute Of Technology A micro-electro-mechanical switch and a method of using and making thereof
AU2002303933A1 (en) 2001-05-31 2002-12-09 Rochester Institute Of Technology Fluidic valves, agitators, and pumps and methods thereof
US7378775B2 (en) 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
US7211923B2 (en) 2001-10-26 2007-05-01 Nth Tech Corporation Rotational motion based, electrostatic power source and methods thereof
US6429109B1 (en) 2001-12-14 2002-08-06 Chartered Semiconductor Manufacturing Ltd Method to form high k dielectric and silicide to reduce poly depletion by using a sacrificial metal between oxide and gate
US6821873B2 (en) * 2002-01-10 2004-11-23 Texas Instruments Incorporated Anneal sequence for high-κ film property optimization
US20040152296A1 (en) * 2003-02-04 2004-08-05 Texas Instruments Incorporated Hexamethyldisilazane treatment of low-k dielectric films
US7287328B2 (en) 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
US7217582B2 (en) 2003-08-29 2007-05-15 Rochester Institute Of Technology Method for non-damaging charge injection and a system thereof
US8581308B2 (en) 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
US7553704B2 (en) * 2005-06-28 2009-06-30 Freescale Semiconductor, Inc. Antifuse element and method of manufacture
US7528015B2 (en) * 2005-06-28 2009-05-05 Freescale Semiconductor, Inc. Tunable antifuse element and method of manufacture
US7746694B2 (en) * 2006-07-10 2010-06-29 Macronix International Co., Ltd. Nonvolatile memory array having modified channel region interface
US7646637B2 (en) * 2006-07-10 2010-01-12 Macronix International Co., Ltd. Nonvolatile memory having modified channel region interface
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9466731B2 (en) 2014-08-12 2016-10-11 Empire Technology Development Llc Dual channel memory
US11515388B2 (en) * 2020-12-18 2022-11-29 Nanya Technology Corporation Semiconductor device with P-N junction isolation structure and method for fabricating the same

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Also Published As

Publication number Publication date
NL7703224A (nl) 1977-09-28
DE2711895A1 (de) 1977-10-06
JPS52144981A (en) 1977-12-02
DE2711895C2 (de) 1987-05-27
GB1575960A (en) 1980-10-01
NL186984C (nl) 1991-04-16
US4115914A (en) 1978-09-26
NL186984B (nl) 1990-11-16
FR2345813A1 (fr) 1977-10-21

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