NL185432C - Halfgeleidercondensator, omvattende een halfgeleidersubstraat, voorzien van een elektrodegebied dat zich uitstrekt langs een van groeven voorzien deel van een oppervlak van het halfgeleidersubstraat. - Google Patents

Halfgeleidercondensator, omvattende een halfgeleidersubstraat, voorzien van een elektrodegebied dat zich uitstrekt langs een van groeven voorzien deel van een oppervlak van het halfgeleidersubstraat.

Info

Publication number
NL185432C
NL185432C NLAANVRAGE7307686,A NL7307686A NL185432C NL 185432 C NL185432 C NL 185432C NL 7307686 A NL7307686 A NL 7307686A NL 185432 C NL185432 C NL 185432C
Authority
NL
Netherlands
Prior art keywords
semiconductor substrate
semiconductor
extending along
electrode area
area extending
Prior art date
Application number
NLAANVRAGE7307686,A
Other languages
English (en)
Dutch (nl)
Other versions
NL7307686A (enrdf_load_stackoverflow
NL185432B (nl
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of NL7307686A publication Critical patent/NL7307686A/xx
Publication of NL185432B publication Critical patent/NL185432B/xx
Application granted granted Critical
Publication of NL185432C publication Critical patent/NL185432C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
NLAANVRAGE7307686,A 1972-06-02 1973-06-01 Halfgeleidercondensator, omvattende een halfgeleidersubstraat, voorzien van een elektrodegebied dat zich uitstrekt langs een van groeven voorzien deel van een oppervlak van het halfgeleidersubstraat. NL185432C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25933272A 1972-06-02 1972-06-02

Publications (3)

Publication Number Publication Date
NL7307686A NL7307686A (enrdf_load_stackoverflow) 1973-12-04
NL185432B NL185432B (nl) 1989-11-01
NL185432C true NL185432C (nl) 1990-04-02

Family

ID=22984501

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7307686,A NL185432C (nl) 1972-06-02 1973-06-01 Halfgeleidercondensator, omvattende een halfgeleidersubstraat, voorzien van een elektrodegebied dat zich uitstrekt langs een van groeven voorzien deel van een oppervlak van het halfgeleidersubstraat.

Country Status (4)

Country Link
JP (1) JPS5648976B2 (enrdf_load_stackoverflow)
DE (1) DE2328090C2 (enrdf_load_stackoverflow)
GB (1) GB1439351A (enrdf_load_stackoverflow)
NL (1) NL185432C (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51148385A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Semiconductor memory cell
JPS583259A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd たて型キヤパシタの製造方法
JPS5891669A (ja) * 1981-11-26 1983-05-31 Seiko Epson Corp 半導体装置
JPS58137242A (ja) * 1982-02-09 1983-08-15 Seiko Epson Corp 集積回路装置
JPS6012752A (ja) * 1983-07-01 1985-01-23 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6023505B2 (ja) * 1983-11-21 1985-06-07 株式会社日立製作所 半導体記憶装置
JPS6023507B2 (ja) * 1983-11-21 1985-06-07 株式会社日立製作所 半導体記憶装置
JPS6023506B2 (ja) * 1983-11-21 1985-06-07 株式会社日立製作所 半導体記憶装置
JPS60158654A (ja) * 1984-01-28 1985-08-20 Seiko Epson Corp 半導体装置
JPS6151869A (ja) * 1984-08-20 1986-03-14 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JPS6099549U (ja) * 1984-10-11 1985-07-06 日本電気株式会社 半導体装置
JPS61177767A (ja) * 1985-01-31 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61228660A (ja) * 1985-04-02 1986-10-11 Mitsubishi Electric Corp 半導体集積回路の製造方法
JPH02191370A (ja) * 1989-12-15 1990-07-27 Seiko Epson Corp 半導体装置
RU2082258C1 (ru) * 1991-08-14 1997-06-20 Сименс АГ Схемная структура с по меньшей мере одним конденсатором и способ ее изготовления
DE19713052A1 (de) * 1997-03-27 1998-10-01 Siemens Ag Kondensatorstruktur
FR2808924B1 (fr) * 2000-05-09 2002-08-16 Centre Nat Rech Scient Condenseur a capacite variable
JP2017135376A (ja) * 2016-01-22 2017-08-03 Tdk株式会社 薄膜キャパシタ及び電子回路モジュール
CN113555444A (zh) * 2021-07-06 2021-10-26 浙江芯国半导体有限公司 一种高质量氧化镓半导体器件及制备方法
JP2023141145A (ja) * 2022-03-23 2023-10-05 日産自動車株式会社 半導体装置、及びその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE635797C (de) * 1930-07-26 1936-09-28 Hermsdorf Schomburg Isolatoren Hochspannungskondensator mit einem Dielektrikum aus keramischem Stoff oder Glas
DE897861C (de) * 1951-06-29 1953-11-26 Siemens Ag Elektrischer Durchfuehrungskondensator
DE1097563B (de) * 1958-04-26 1961-01-19 Elektroteile G M B H Zugmagnet fuer Gleich- oder Wechselstrom mit vom Anker angetriebener Zahnstange
US3149399A (en) * 1962-09-25 1964-09-22 Sprague Electric Co Silicon capacitor
GB1288278A (enrdf_load_stackoverflow) * 1968-12-31 1972-09-06
JPS512699Y2 (enrdf_load_stackoverflow) * 1971-01-23 1976-01-26

Also Published As

Publication number Publication date
DE2328090C2 (de) 1987-01-22
GB1439351A (en) 1976-06-16
NL7307686A (enrdf_load_stackoverflow) 1973-12-04
NL185432B (nl) 1989-11-01
JPS5648976B2 (enrdf_load_stackoverflow) 1981-11-19
JPS4957779A (enrdf_load_stackoverflow) 1974-06-05
DE2328090A1 (de) 1973-12-13

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Legal Events

Date Code Title Description
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01