NL1016942C2 - Organisch antireflecterend deklaagpolymeer en bereiding hiervan. - Google Patents

Organisch antireflecterend deklaagpolymeer en bereiding hiervan. Download PDF

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Publication number
NL1016942C2
NL1016942C2 NL1016942A NL1016942A NL1016942C2 NL 1016942 C2 NL1016942 C2 NL 1016942C2 NL 1016942 A NL1016942 A NL 1016942A NL 1016942 A NL1016942 A NL 1016942A NL 1016942 C2 NL1016942 C2 NL 1016942C2
Authority
NL
Netherlands
Prior art keywords
alkyl
formula
polymer
independently hydrogen
methyl
Prior art date
Application number
NL1016942A
Other languages
English (en)
Dutch (nl)
Other versions
NL1016942A1 (nl
Inventor
Jae-Chang Jung
Min-Ho Jung
Sung-Eun Hong
Geun-Su Lee
Ki-Ho Baik
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1016942A1 publication Critical patent/NL1016942A1/xx
Application granted granted Critical
Publication of NL1016942C2 publication Critical patent/NL1016942C2/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F120/00—Homopolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/34—Esters containing nitrogen, e.g. N,N-dimethylaminoethyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polymerization Catalysts (AREA)
  • Polymerisation Methods In General (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
NL1016942A 1999-12-23 2000-12-21 Organisch antireflecterend deklaagpolymeer en bereiding hiervan. NL1016942C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-1999-0061344A KR100427440B1 (ko) 1999-12-23 1999-12-23 유기 반사방지 화합물 및 그의 제조방법
KR19990061344 1999-12-23

Publications (2)

Publication Number Publication Date
NL1016942A1 NL1016942A1 (nl) 2001-06-26
NL1016942C2 true NL1016942C2 (nl) 2002-05-01

Family

ID=19628987

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1016942A NL1016942C2 (nl) 1999-12-23 2000-12-21 Organisch antireflecterend deklaagpolymeer en bereiding hiervan.

Country Status (10)

Country Link
US (1) US6548613B2 (ja)
JP (1) JP3960750B2 (ja)
KR (1) KR100427440B1 (ja)
CN (1) CN1200014C (ja)
DE (1) DE10063263A1 (ja)
FR (2) FR2802935B1 (ja)
GB (1) GB2357511B (ja)
IT (1) IT1320867B1 (ja)
NL (1) NL1016942C2 (ja)
TW (1) TWI265934B (ja)

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KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721182B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100721181B1 (ko) * 2000-06-30 2007-05-23 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100687851B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100574486B1 (ko) * 2000-06-30 2006-04-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
KR100480235B1 (ko) * 2002-07-18 2005-04-06 주식회사 하이닉스반도체 유기 반사방지막 조성물 및 이를 이용한 포토레지스트의패턴 형성 방법
US7056826B2 (en) * 2003-01-07 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming copper interconnects
KR101156973B1 (ko) * 2005-03-02 2012-06-20 주식회사 동진쎄미켐 유기 반사방지막 형성용 유기 중합체 및 이를 포함하는 유기 조성물
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US7666575B2 (en) 2006-10-18 2010-02-23 Az Electronic Materials Usa Corp Antireflective coating compositions
KR100870746B1 (ko) * 2006-11-27 2008-11-26 삼성전자주식회사 패턴 형성 방법 및 이를 이용한 커패시터 제조 방법
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
CN101622296B (zh) 2007-02-27 2013-10-16 Az电子材料美国公司 硅基抗反射涂料组合物
WO2015150508A1 (de) * 2014-04-04 2015-10-08 Basf Se Wässrige polymerzusammensetzungen
EP3155030B1 (de) * 2014-06-13 2018-03-28 Basf Se Polyurethane mit reduzierter aldehydemission
KR102662122B1 (ko) * 2016-06-01 2024-04-30 주식회사 동진쎄미켐 네거티브 톤 현상 공정에 이용되는 유기 반사방지막 형성용 조성물

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0741126A2 (de) * 1995-05-05 1996-11-06 Röhm Gmbh Verfahren zur Herstellung von Oximmethacrylaten
WO1999017161A1 (en) * 1997-09-30 1999-04-08 Brewer Science, Inc. Improved thermosetting anti-reflective coatings at deep ultraviolet
NL1015471C2 (nl) * 1999-06-22 2001-04-09 Hyundai Electronics Ind Organisch anti-reflecterend polymeer en werkwijze voor de bereiding hiervan.

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3100077A1 (de) 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
US4822718A (en) 1982-09-30 1989-04-18 Brewer Science, Inc. Light absorbing coating
US5674648A (en) 1984-08-06 1997-10-07 Brewer Science, Inc. Anti-reflective coating
US5525457A (en) 1994-12-09 1996-06-11 Japan Synthetic Rubber Co., Ltd. Reflection preventing film and process for forming resist pattern using the same
US5886102A (en) * 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5948847A (en) * 1996-12-13 1999-09-07 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic patterning
JP3854367B2 (ja) * 1997-06-04 2006-12-06 Ａｚエレクトロニックマテリアルズ株式会社 光吸収性ポリマー、光吸収膜形成性組成物及び光吸収膜とそれを用いた反射防止膜
JP4053631B2 (ja) * 1997-10-08 2008-02-27 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜又は光吸収膜用組成物及びこれに用いる重合体
US6190839B1 (en) * 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
KR100363695B1 (ko) * 1998-12-31 2003-04-11 주식회사 하이닉스반도체 유기난반사방지중합체및그의제조방법
KR100465864B1 (ko) * 1999-03-15 2005-01-24 주식회사 하이닉스반도체 유기 난반사방지 중합체 및 그의 제조방법
KR100395904B1 (ko) * 1999-04-23 2003-08-27 주식회사 하이닉스반도체 유기 반사방지 중합체 및 그의 제조방법
KR100355604B1 (ko) * 1999-12-23 2002-10-12 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0741126A2 (de) * 1995-05-05 1996-11-06 Röhm Gmbh Verfahren zur Herstellung von Oximmethacrylaten
WO1999017161A1 (en) * 1997-09-30 1999-04-08 Brewer Science, Inc. Improved thermosetting anti-reflective coatings at deep ultraviolet
NL1015471C2 (nl) * 1999-06-22 2001-04-09 Hyundai Electronics Ind Organisch anti-reflecterend polymeer en werkwijze voor de bereiding hiervan.

Also Published As

Publication number Publication date
FR2802935B1 (fr) 2003-03-28
CN1308089A (zh) 2001-08-15
GB2357511A (en) 2001-06-27
GB2357511B (en) 2003-04-02
GB0031419D0 (en) 2001-02-07
TWI265934B (en) 2006-11-11
FR2802935A1 (fr) 2001-06-29
CN1200014C (zh) 2005-05-04
US20010034427A1 (en) 2001-10-25
NL1016942A1 (nl) 2001-06-26
JP2001192422A (ja) 2001-07-17
KR100427440B1 (ko) 2004-04-17
ITTO20001220A1 (it) 2002-06-22
FR2808027A1 (fr) 2001-10-26
KR20010057925A (ko) 2001-07-05
FR2808027B1 (fr) 2006-01-20
US6548613B2 (en) 2003-04-15
DE10063263A1 (de) 2001-06-28
JP3960750B2 (ja) 2007-08-15
ITTO20001220A0 (it) 2000-12-22
IT1320867B1 (it) 2003-12-10

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20020226

PD2B A search report has been drawn up
MM Lapsed because of non-payment of the annual fee

Effective date: 20160101