NL1012840C2 - Polymeren om te worden toegepast in antireflectiedeklagen en werkwijzen ter bereiding hiervan. - Google Patents

Polymeren om te worden toegepast in antireflectiedeklagen en werkwijzen ter bereiding hiervan. Download PDF

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Publication number
NL1012840C2
NL1012840C2 NL1012840A NL1012840A NL1012840C2 NL 1012840 C2 NL1012840 C2 NL 1012840C2 NL 1012840 A NL1012840 A NL 1012840A NL 1012840 A NL1012840 A NL 1012840A NL 1012840 C2 NL1012840 C2 NL 1012840C2
Authority
NL
Netherlands
Prior art keywords
formula
general formula
fluorene
anthracene
carboxylic acid
Prior art date
Application number
NL1012840A
Other languages
English (en)
Dutch (nl)
Other versions
NL1012840A1 (nl
Inventor
Min-Ho Jung
Sung-Eun Hong
Ki-Ho Baik
Hyeong-Soo Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1012840A1 publication Critical patent/NL1012840A1/xx
Application granted granted Critical
Publication of NL1012840C2 publication Critical patent/NL1012840C2/nl

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/34—Introducing sulfur atoms or sulfur-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/16—Halogens
    • C08F212/20—Fluorine
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
NL1012840A 1998-12-31 1999-08-17 Polymeren om te worden toegepast in antireflectiedeklagen en werkwijzen ter bereiding hiervan. NL1012840C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-1998-0063695A KR100363695B1 (ko) 1998-12-31 1998-12-31 유기난반사방지중합체및그의제조방법
KR19980063695 1998-12-31

Publications (2)

Publication Number Publication Date
NL1012840A1 NL1012840A1 (nl) 2000-07-03
NL1012840C2 true NL1012840C2 (nl) 2001-06-07

Family

ID=19570257

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1012840A NL1012840C2 (nl) 1998-12-31 1999-08-17 Polymeren om te worden toegepast in antireflectiedeklagen en werkwijzen ter bereiding hiervan.

Country Status (10)

Country Link
US (2) US6350818B1 (US06492441-20021210-C00048.png)
JP (2) JP4253088B2 (US06492441-20021210-C00048.png)
KR (1) KR100363695B1 (US06492441-20021210-C00048.png)
CN (1) CN1166704C (US06492441-20021210-C00048.png)
DE (1) DE19940320B4 (US06492441-20021210-C00048.png)
FR (1) FR2788060B1 (US06492441-20021210-C00048.png)
GB (1) GB2345289B (US06492441-20021210-C00048.png)
IT (1) IT1308658B1 (US06492441-20021210-C00048.png)
NL (1) NL1012840C2 (US06492441-20021210-C00048.png)
TW (1) TWI227259B (US06492441-20021210-C00048.png)

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EP1190277B1 (en) * 1999-06-10 2009-10-07 AlliedSignal Inc. Semiconductor having spin-on-glass anti-reflective coatings for photolithography
US6824879B2 (en) 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
KR100557606B1 (ko) * 1999-08-31 2006-03-10 주식회사 하이닉스반도체 유기 난반사 방지용 중합체
KR100427440B1 (ko) * 1999-12-23 2004-04-17 주식회사 하이닉스반도체 유기 반사방지 화합물 및 그의 제조방법
US7132219B2 (en) * 2001-02-02 2006-11-07 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
JP3509760B2 (ja) * 2001-02-08 2004-03-22 株式会社半導体先端テクノロジーズ 半導体装置の製造方法
KR100465866B1 (ko) * 2001-10-26 2005-01-13 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
JP4381143B2 (ja) * 2001-11-15 2009-12-09 ハネウェル・インターナショナル・インコーポレーテッド フォトリソグラフィー用スピンオン反射防止膜
US6852474B2 (en) * 2002-04-30 2005-02-08 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
WO2004027850A1 (en) * 2002-09-20 2004-04-01 Honeywell International, Inc. Interlayer adhesion promoter for low k materials
US7056826B2 (en) * 2003-01-07 2006-06-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming copper interconnects
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7078336B2 (en) * 2003-11-19 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
JP4720988B2 (ja) * 2005-07-11 2011-07-13 日産化学工業株式会社 フルオレン構造を有する化合物を含むリソグラフィー用下層膜形成組成物
KR100671114B1 (ko) 2005-07-28 2007-01-17 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
US7488771B2 (en) * 2005-09-02 2009-02-10 International Business Machines Corporation Stabilization of vinyl ether materials
US7419611B2 (en) * 2005-09-02 2008-09-02 International Business Machines Corporation Processes and materials for step and flash imprint lithography
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
JP4952906B2 (ja) * 2006-11-15 2012-06-13 ソニーケミカル＆インフォメーションデバイス株式会社 封止樹脂組成物及び発光素子
US8642246B2 (en) * 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
JP5099140B2 (ja) * 2007-08-24 2012-12-12 東レ株式会社 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子
EP2245512B1 (en) 2008-01-29 2019-09-11 Brewer Science, Inc. On-track process for patterning hardmask by multiple dark field exposures
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
JP5842503B2 (ja) * 2010-09-29 2016-01-13 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法
KR101811064B1 (ko) 2010-09-29 2017-12-20 제이에스알 가부시끼가이샤 패턴형성 방법, 레지스트 하층막의 형성 방법, 레지스트 하층막 형성용 조성물 및 레지스트 하층막
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR101993480B1 (ko) * 2011-12-16 2019-06-26 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 수지 조성물, 레지스트 하층막, 그의 형성 방법 및 패턴 형성 방법
JP6160068B2 (ja) * 2011-12-16 2017-07-12 Jsr株式会社 レジスト下層膜形成用樹脂組成物、レジスト下層膜、その形成方法及びパターン形成方法
EP3194502A4 (en) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
CN107797384B (zh) * 2016-09-07 2020-10-09 上海飞凯电子材料有限公司 一种感光树脂、正性光刻胶及应用
CN117820910A (zh) * 2022-06-30 2024-04-05 华为技术有限公司 涂层材料和集成电路及制备方法、电子设备

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FR2262329A1 (US06492441-20021210-C00048.png) * 1974-02-21 1975-09-19 Fuji Photo Film Co Ltd
JPH0210346A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd パターン形成材料
EP0455223A2 (en) * 1990-05-02 1991-11-06 Sumitomo Chemical Company, Limited Resist composition
KR920005774B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 반도체용 포지티브 포토레지스트 조성물
EP0501308A1 (de) * 1991-02-28 1992-09-02 Hoechst Aktiengesellschaft Strahlungsempfindliche Polymere mit Naphthochinon-2-diazid-4-sulfonyl-Gruppen und deren Verwendung in einem positiv arbeitenden Aufzeichnungsmaterial
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US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
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US5576138A (en) * 1994-04-22 1996-11-19 Tokyo Ohka Kogyo Co., Ltd. Positive-working naphtho quinone diazide sulfonic acid ester photoresist composition containing select combination of additives
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EP0886182A1 (en) * 1997-06-16 1998-12-23 Sumitomo Chemical Company, Limited Positive photoresist composition

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JPH0210346A (ja) * 1988-06-29 1990-01-16 Matsushita Electric Ind Co Ltd パターン形成材料
EP0455223A2 (en) * 1990-05-02 1991-11-06 Sumitomo Chemical Company, Limited Resist composition
KR920005774B1 (ko) * 1990-06-16 1992-07-18 제일합섬 주식회사 반도체용 포지티브 포토레지스트 조성물
EP0501308A1 (de) * 1991-02-28 1992-09-02 Hoechst Aktiengesellschaft Strahlungsempfindliche Polymere mit Naphthochinon-2-diazid-4-sulfonyl-Gruppen und deren Verwendung in einem positiv arbeitenden Aufzeichnungsmaterial
US5576138A (en) * 1994-04-22 1996-11-19 Tokyo Ohka Kogyo Co., Ltd. Positive-working naphtho quinone diazide sulfonic acid ester photoresist composition containing select combination of additives
WO1996011895A1 (en) * 1994-10-12 1996-04-25 Fusion Systems Corporation Method of treating an anti-reflective coating on a substrate
WO1996020429A1 (en) * 1994-12-23 1996-07-04 Horsell P.L.C. Lithographic plate
US5529880A (en) * 1995-03-29 1996-06-25 Shipley Company, L.L.C. Photoresist with a mixture of a photosensitive esterified resin and an o-naphthoquinone diazide compound
WO1998006008A1 (en) * 1996-08-07 1998-02-12 Clariant International, Ltd. Positive photoresist composition containing a 2,4-dinitro-1-naphthol
EP0886182A1 (en) * 1997-06-16 1998-12-23 Sumitomo Chemical Company, Limited Positive photoresist composition

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Also Published As

Publication number Publication date
ITTO991027A0 (it) 1999-11-24
ITTO991027A1 (it) 2001-05-24
FR2788060A1 (fr) 2000-07-07
DE19940320B4 (de) 2006-09-21
GB9917218D0 (en) 1999-09-22
TWI227259B (en) 2005-02-01
CN1166704C (zh) 2004-09-15
GB2345289A (en) 2000-07-05
DE19940320A1 (de) 2000-07-06
CN1260355A (zh) 2000-07-19
KR100363695B1 (ko) 2003-04-11
FR2788060B1 (fr) 2003-10-17
NL1012840A1 (nl) 2000-07-03
JP2000204115A (ja) 2000-07-25
US6492441B2 (en) 2002-12-10
GB2345289B (en) 2003-03-26
KR20010016643A (ko) 2001-03-05
US20020120070A1 (en) 2002-08-29
JP2007231270A (ja) 2007-09-13
US6350818B1 (en) 2002-02-26
IT1308658B1 (it) 2002-01-09
JP4253088B2 (ja) 2009-04-08

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