MY209632A - Light-emitting element - Google Patents

Light-emitting element

Info

Publication number
MY209632A
MY209632A MYPI2021001290A MYPI2021001290A MY209632A MY 209632 A MY209632 A MY 209632A MY PI2021001290 A MYPI2021001290 A MY PI2021001290A MY PI2021001290 A MYPI2021001290 A MY PI2021001290A MY 209632 A MY209632 A MY 209632A
Authority
MY
Malaysia
Prior art keywords
light emitting
pad
metal pattern
electrically coupled
emitting part
Prior art date
Application number
MYPI2021001290A
Other languages
English (en)
Inventor
Jong Hyeon Chae
Ho Joon Lee
Seong Kyu Jang
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of MY209632A publication Critical patent/MY209632A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
MYPI2021001290A 2018-09-14 2019-09-10 Light-emitting element MY209632A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862731218P 2018-09-14 2018-09-14
US16/561,440 US10886447B2 (en) 2018-09-14 2019-09-05 Light emitting device
PCT/KR2019/011708 WO2020055091A1 (ko) 2018-09-14 2019-09-10 발광 소자

Publications (1)

Publication Number Publication Date
MY209632A true MY209632A (en) 2025-07-27

Family

ID=69773382

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2021001290A MY209632A (en) 2018-09-14 2019-09-10 Light-emitting element

Country Status (7)

Country Link
US (3) US10886447B2 (https=)
EP (1) EP3852154A4 (https=)
JP (1) JP7371089B2 (https=)
KR (1) KR102736947B1 (https=)
CN (2) CN112689904B (https=)
MY (1) MY209632A (https=)
WO (1) WO2020055091A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10886447B2 (en) * 2018-09-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting device

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730153A (ja) * 1993-07-14 1995-01-31 Hitachi Cable Ltd 発光ダイオードチップ、その台座、及び発光ダイオード
US6214716B1 (en) * 1998-09-30 2001-04-10 Micron Technology, Inc. Semiconductor substrate-based BGA interconnection and methods of farication same
JP4163833B2 (ja) * 1999-11-30 2008-10-08 松下電器産業株式会社 半導体発光装置
JP2006066518A (ja) * 2004-08-25 2006-03-09 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
JP5244614B2 (ja) 2005-12-27 2013-07-24 三星ディスプレイ株式會社 Ｉｉｉ族窒化物系発光素子
KR100652346B1 (ko) 2006-01-06 2006-11-30 엘지전자 주식회사 발광 다이오드 및 그 제조방법
US8058663B2 (en) 2007-09-26 2011-11-15 Iii-N Technology, Inc. Micro-emitter array based full-color micro-display
KR101018280B1 (ko) * 2008-11-10 2011-03-04 전자부품연구원 수직구조 발광다이오드 및 그 제조방법
KR101072193B1 (ko) 2010-04-01 2011-10-10 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 및 발광소자 패키지
KR101281081B1 (ko) * 2010-10-25 2013-07-09 일진엘이디(주) 수직형 발광 다이오드 셀 어레이 및 그의 제조 방법
CN102593303A (zh) * 2011-01-05 2012-07-18 晶元光电股份有限公司 具有栓塞的发光元件
KR101786082B1 (ko) 2011-01-27 2017-10-16 엘지이노텍 주식회사 발광 소자
CN106058000B (zh) * 2011-09-16 2019-04-23 首尔伟傲世有限公司 发光二极管及制造该发光二极管的方法
JP5956604B2 (ja) 2011-12-14 2016-07-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
US9082936B2 (en) * 2013-01-29 2015-07-14 Nthdegree Technologies Worldwide Inc. Transparent LED lamp for bidirectional lighting
US9443833B2 (en) * 2013-01-31 2016-09-13 Nthdegree Technologies Worldwide Inc. Transparent overlapping LED die layers
JP2014175427A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
JP2015012044A (ja) 2013-06-26 2015-01-19 株式会社東芝 半導体発光素子
JP2015012244A (ja) 2013-07-01 2015-01-19 株式会社東芝 半導体発光素子
KR20160025455A (ko) 2014-08-27 2016-03-08 서울바이오시스 주식회사 발광 소자 및 이의 제조 방법
CN106558597B (zh) 2015-09-30 2020-03-06 三星电子株式会社 发光器件封装件
WO2017079168A1 (en) * 2015-11-04 2017-05-11 The Regents Of The University Of California Iii-nitride tunnel junction with modified p-n interface
KR102591388B1 (ko) * 2016-01-18 2023-10-19 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR102513080B1 (ko) * 2016-04-04 2023-03-24 삼성전자주식회사 Led 광원 모듈 및 디스플레이 장치
CN105870265A (zh) * 2016-04-19 2016-08-17 京东方科技集团股份有限公司 发光二极管基板及其制备方法、显示装置
WO2018064805A1 (en) * 2016-10-08 2018-04-12 Goertek. Inc Display device and electronics apparatus
KR20180074263A (ko) 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자 및 이를 갖는 반도체 소자 패키지
US10748881B2 (en) * 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10886447B2 (en) * 2018-09-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting device

Also Published As

Publication number Publication date
US20210091286A1 (en) 2021-03-25
JP7371089B2 (ja) 2023-10-30
US11876156B2 (en) 2024-01-16
WO2020055091A1 (ko) 2020-03-19
CN210224057U (zh) 2020-03-31
CN112689904B (zh) 2024-08-27
US20240113272A1 (en) 2024-04-04
KR20210049780A (ko) 2021-05-06
KR102736947B1 (ko) 2024-12-03
EP3852154A4 (en) 2022-06-15
BR112021004875A2 (pt) 2021-07-20
US10886447B2 (en) 2021-01-05
JP2022500842A (ja) 2022-01-04
US20200091390A1 (en) 2020-03-19
EP3852154A1 (en) 2021-07-21
CN112689904A (zh) 2021-04-20

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