JP7371089B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP7371089B2
JP7371089B2 JP2021510345A JP2021510345A JP7371089B2 JP 7371089 B2 JP7371089 B2 JP 7371089B2 JP 2021510345 A JP2021510345 A JP 2021510345A JP 2021510345 A JP2021510345 A JP 2021510345A JP 7371089 B2 JP7371089 B2 JP 7371089B2
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JP
Japan
Prior art keywords
light emitting
type semiconductor
semiconductor layer
layer
conductive pattern
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JP2021510345A
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English (en)
Japanese (ja)
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JP2022500842A (ja
JP2022500842A5 (https=
Inventor
ギュ ジャン，ソン
ジュン イ，ホ
ヒョン チェ，ジョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of JP2022500842A publication Critical patent/JP2022500842A/ja
Publication of JP2022500842A5 publication Critical patent/JP2022500842A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
JP2021510345A 2018-09-14 2019-09-10 発光装置 Active JP7371089B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862731218P 2018-09-14 2018-09-14
US62/731,218 2018-09-14
US16/561,440 2019-09-05
US16/561,440 US10886447B2 (en) 2018-09-14 2019-09-05 Light emitting device
PCT/KR2019/011708 WO2020055091A1 (ko) 2018-09-14 2019-09-10 발광 소자

Publications (3)

Publication Number Publication Date
JP2022500842A JP2022500842A (ja) 2022-01-04
JP2022500842A5 JP2022500842A5 (https=) 2022-09-20
JP7371089B2 true JP7371089B2 (ja) 2023-10-30

Family

ID=69773382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021510345A Active JP7371089B2 (ja) 2018-09-14 2019-09-10 発光装置

Country Status (7)

Country Link
US (3) US10886447B2 (https=)
EP (1) EP3852154A4 (https=)
JP (1) JP7371089B2 (https=)
KR (1) KR102736947B1 (https=)
CN (2) CN112689904B (https=)
MY (1) MY209632A (https=)
WO (1) WO2020055091A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10886447B2 (en) * 2018-09-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156327A (ja) 1999-11-30 2001-06-08 Matsushita Electronics Industry Corp 半導体発光装置
US20090078955A1 (en) 2007-09-26 2009-03-26 Iii-N Technlogy, Inc Micro-Emitter Array Based Full-Color Micro-Display
JP2011216886A (ja) 2010-04-01 2011-10-27 Lg Innotek Co Ltd 発光素子、発光素子パッケージ
CN102593303A (zh) 2011-01-05 2012-07-18 晶元光电股份有限公司 具有栓塞的发光元件
JP2014175427A (ja) 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
US20170092820A1 (en) 2015-09-30 2017-03-30 Samsung Electronics Co., Ltd. Light emitting device package
US20170288093A1 (en) 2016-04-04 2017-10-05 Samsung Electronics Co., Ltd. Led light source module and display device

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JPH0730153A (ja) * 1993-07-14 1995-01-31 Hitachi Cable Ltd 発光ダイオードチップ、その台座、及び発光ダイオード
US6214716B1 (en) * 1998-09-30 2001-04-10 Micron Technology, Inc. Semiconductor substrate-based BGA interconnection and methods of farication same
JP2006066518A (ja) * 2004-08-25 2006-03-09 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
JP5244614B2 (ja) 2005-12-27 2013-07-24 三星ディスプレイ株式會社 Ｉｉｉ族窒化物系発光素子
KR100652346B1 (ko) 2006-01-06 2006-11-30 엘지전자 주식회사 발광 다이오드 및 그 제조방법
KR101018280B1 (ko) * 2008-11-10 2011-03-04 전자부품연구원 수직구조 발광다이오드 및 그 제조방법
KR101281081B1 (ko) * 2010-10-25 2013-07-09 일진엘이디(주) 수직형 발광 다이오드 셀 어레이 및 그의 제조 방법
KR101786082B1 (ko) 2011-01-27 2017-10-16 엘지이노텍 주식회사 발광 소자
CN106058000B (zh) * 2011-09-16 2019-04-23 首尔伟傲世有限公司 发光二极管及制造该发光二极管的方法
JP5956604B2 (ja) 2011-12-14 2016-07-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
US9082936B2 (en) * 2013-01-29 2015-07-14 Nthdegree Technologies Worldwide Inc. Transparent LED lamp for bidirectional lighting
US9443833B2 (en) * 2013-01-31 2016-09-13 Nthdegree Technologies Worldwide Inc. Transparent overlapping LED die layers
JP2015012044A (ja) 2013-06-26 2015-01-19 株式会社東芝 半導体発光素子
JP2015012244A (ja) 2013-07-01 2015-01-19 株式会社東芝 半導体発光素子
KR20160025455A (ko) 2014-08-27 2016-03-08 서울바이오시스 주식회사 발광 소자 및 이의 제조 방법
WO2017079168A1 (en) * 2015-11-04 2017-05-11 The Regents Of The University Of California Iii-nitride tunnel junction with modified p-n interface
KR102591388B1 (ko) * 2016-01-18 2023-10-19 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
CN105870265A (zh) * 2016-04-19 2016-08-17 京东方科技集团股份有限公司 发光二极管基板及其制备方法、显示装置
WO2018064805A1 (en) * 2016-10-08 2018-04-12 Goertek. Inc Display device and electronics apparatus
KR20180074263A (ko) 2016-12-23 2018-07-03 엘지이노텍 주식회사 반도체 소자 및 이를 갖는 반도체 소자 패키지
US10748881B2 (en) * 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same
US10886447B2 (en) * 2018-09-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001156327A (ja) 1999-11-30 2001-06-08 Matsushita Electronics Industry Corp 半導体発光装置
US20090078955A1 (en) 2007-09-26 2009-03-26 Iii-N Technlogy, Inc Micro-Emitter Array Based Full-Color Micro-Display
JP2011216886A (ja) 2010-04-01 2011-10-27 Lg Innotek Co Ltd 発光素子、発光素子パッケージ
CN102593303A (zh) 2011-01-05 2012-07-18 晶元光电股份有限公司 具有栓塞的发光元件
JP2014175427A (ja) 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
US20170092820A1 (en) 2015-09-30 2017-03-30 Samsung Electronics Co., Ltd. Light emitting device package
US20170288093A1 (en) 2016-04-04 2017-10-05 Samsung Electronics Co., Ltd. Led light source module and display device

Also Published As

Publication number Publication date
US20210091286A1 (en) 2021-03-25
US11876156B2 (en) 2024-01-16
WO2020055091A1 (ko) 2020-03-19
CN210224057U (zh) 2020-03-31
CN112689904B (zh) 2024-08-27
US20240113272A1 (en) 2024-04-04
KR20210049780A (ko) 2021-05-06
KR102736947B1 (ko) 2024-12-03
EP3852154A4 (en) 2022-06-15
BR112021004875A2 (pt) 2021-07-20
US10886447B2 (en) 2021-01-05
MY209632A (en) 2025-07-27
JP2022500842A (ja) 2022-01-04
US20200091390A1 (en) 2020-03-19
EP3852154A1 (en) 2021-07-21
CN112689904A (zh) 2021-04-20

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