CN112689904B - 发光元件 - Google Patents

发光元件 Download PDF

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Publication number
CN112689904B
CN112689904B CN201980059815.8A CN201980059815A CN112689904B CN 112689904 B CN112689904 B CN 112689904B CN 201980059815 A CN201980059815 A CN 201980059815A CN 112689904 B CN112689904 B CN 112689904B
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CN
China
Prior art keywords
semiconductor layer
type semiconductor
light emitting
conductive pattern
light
Prior art date
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Active
Application number
CN201980059815.8A
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English (en)
Chinese (zh)
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CN112689904A (zh
Inventor
张成逵
李豪埈
蔡钟炫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seoul Viosys Co Ltd
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Seoul Viosys Co Ltd
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Publication date
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Publication of CN112689904A publication Critical patent/CN112689904A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Devices (AREA)
CN201980059815.8A 2018-09-14 2019-09-10 发光元件 Active CN112689904B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201862731218P 2018-09-14 2018-09-14
US62/731,218 2018-09-14
US16/561,440 2019-09-05
US16/561,440 US10886447B2 (en) 2018-09-14 2019-09-05 Light emitting device
PCT/KR2019/011708 WO2020055091A1 (ko) 2018-09-14 2019-09-10 발광 소자

Publications (2)

Publication Number Publication Date
CN112689904A CN112689904A (zh) 2021-04-20
CN112689904B true CN112689904B (zh) 2024-08-27

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN201980059815.8A Active CN112689904B (zh) 2018-09-14 2019-09-10 发光元件
CN201921503595.7U Active CN210224057U (zh) 2018-09-14 2019-09-10 发光元件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201921503595.7U Active CN210224057U (zh) 2018-09-14 2019-09-10 发光元件

Country Status (7)

Country Link
US (3) US10886447B2 (https=)
EP (1) EP3852154A4 (https=)
JP (1) JP7371089B2 (https=)
KR (1) KR102736947B1 (https=)
CN (2) CN112689904B (https=)
MY (1) MY209632A (https=)
WO (1) WO2020055091A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10886447B2 (en) * 2018-09-14 2021-01-05 Seoul Viosys Co., Ltd. Light emitting device

Citations (1)

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Publication number Priority date Publication date Assignee Title
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KR101281081B1 (ko) * 2010-10-25 2013-07-09 일진엘이디(주) 수직형 발광 다이오드 셀 어레이 및 그의 제조 방법
CN102593303A (zh) * 2011-01-05 2012-07-18 晶元光电股份有限公司 具有栓塞的发光元件
KR101786082B1 (ko) 2011-01-27 2017-10-16 엘지이노텍 주식회사 발광 소자
CN106058000B (zh) * 2011-09-16 2019-04-23 首尔伟傲世有限公司 发光二极管及制造该发光二极管的方法
JP5956604B2 (ja) 2011-12-14 2016-07-27 ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
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JP2014175427A (ja) * 2013-03-07 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
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JP2015012244A (ja) 2013-07-01 2015-01-19 株式会社東芝 半導体発光素子
KR20160025455A (ko) 2014-08-27 2016-03-08 서울바이오시스 주식회사 발광 소자 및 이의 제조 방법
CN106558597B (zh) 2015-09-30 2020-03-06 三星电子株式会社 发光器件封装件
WO2017079168A1 (en) * 2015-11-04 2017-05-11 The Regents Of The University Of California Iii-nitride tunnel junction with modified p-n interface
KR102591388B1 (ko) * 2016-01-18 2023-10-19 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치
KR102513080B1 (ko) * 2016-04-04 2023-03-24 삼성전자주식회사 Led 광원 모듈 및 디스플레이 장치
CN105870265A (zh) * 2016-04-19 2016-08-17 京东方科技集团股份有限公司 发光二极管基板及其制备方法、显示装置
WO2018064805A1 (en) * 2016-10-08 2018-04-12 Goertek. Inc Display device and electronics apparatus
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US10748881B2 (en) * 2017-12-05 2020-08-18 Seoul Viosys Co., Ltd. Light emitting device with LED stack for display and display apparatus having the same

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Also Published As

Publication number Publication date
US20210091286A1 (en) 2021-03-25
JP7371089B2 (ja) 2023-10-30
US11876156B2 (en) 2024-01-16
WO2020055091A1 (ko) 2020-03-19
CN210224057U (zh) 2020-03-31
US20240113272A1 (en) 2024-04-04
KR20210049780A (ko) 2021-05-06
KR102736947B1 (ko) 2024-12-03
EP3852154A4 (en) 2022-06-15
BR112021004875A2 (pt) 2021-07-20
US10886447B2 (en) 2021-01-05
MY209632A (en) 2025-07-27
JP2022500842A (ja) 2022-01-04
US20200091390A1 (en) 2020-03-19
EP3852154A1 (en) 2021-07-21
CN112689904A (zh) 2021-04-20

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