MY172115A - Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics - Google Patents
Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronicsInfo
- Publication number
- MY172115A MY172115A MYPI2012005126A MYPI2012005126A MY172115A MY 172115 A MY172115 A MY 172115A MY PI2012005126 A MYPI2012005126 A MY PI2012005126A MY PI2012005126 A MYPI2012005126 A MY PI2012005126A MY 172115 A MY172115 A MY 172115A
- Authority
- MY
- Malaysia
- Prior art keywords
- stretchable
- nanomembranes
- semiconductors
- electronic circuits
- stretchable electronics
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000005452 bending Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
Classifications
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- B81—MICROSTRUCTURAL TECHNOLOGY
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0133—Elastomeric or compliant polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09045—Locally raised area or protrusion of insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0271—Mechanical force other than pressure, e.g. shearing or pulling
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/201—Integrated devices having a three-dimensional layout, e.g. 3D ICs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Thin Film Transistor (AREA)
- Micromachines (AREA)
- Optical Integrated Circuits (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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- Mechanical Light Control Or Optical Switches (AREA)
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US82468306P | 2006-09-06 | 2006-09-06 | |
US94462607P | 2007-06-18 | 2007-06-18 |
Publications (1)
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MY172115A true MY172115A (en) | 2019-11-14 |
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MYPI2012005126A MY172115A (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
MYPI20090622 MY149475A (en) | 2006-09-06 | 2007-09-06 | Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics |
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EP (1) | EP2064710A4 (fr) |
JP (3) | JP5578509B2 (fr) |
KR (5) | KR101814683B1 (fr) |
CN (2) | CN101681695B (fr) |
MY (2) | MY172115A (fr) |
TW (3) | TWI654770B (fr) |
WO (1) | WO2008030960A2 (fr) |
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- 2007-09-06 WO PCT/US2007/077759 patent/WO2008030960A2/fr active Application Filing
- 2007-09-06 TW TW106107273A patent/TWI654770B/zh active
- 2007-09-06 MY MYPI2012005126A patent/MY172115A/en unknown
- 2007-09-06 JP JP2009527564A patent/JP5578509B2/ja active Active
- 2007-09-06 TW TW103117812A patent/TWI587527B/zh active
- 2007-09-06 CN CN2007800411276A patent/CN101681695B/zh active Active
- 2007-09-06 KR KR1020167032797A patent/KR101814683B1/ko active IP Right Grant
- 2007-09-06 MY MYPI20090622 patent/MY149475A/en unknown
- 2007-09-06 EP EP07841968A patent/EP2064710A4/fr not_active Ceased
- 2007-09-06 KR KR20097007081A patent/KR101453419B1/ko active IP Right Grant
- 2007-09-06 CN CN201310075846.7A patent/CN103213935B/zh active Active
- 2007-09-06 KR KR1020147031584A patent/KR101689747B1/ko active IP Right Grant
- 2007-09-06 TW TW096133310A patent/TWI485863B/zh active
- 2007-09-06 KR KR1020177037238A patent/KR102087337B1/ko active IP Right Grant
- 2007-09-06 KR KR1020147006478A patent/KR101612749B1/ko active IP Right Grant
-
2013
- 2013-06-21 JP JP2013131022A patent/JP5735585B2/ja active Active
-
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- 2015-04-16 JP JP2015084234A patent/JP2015216365A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20150003308A (ko) | 2015-01-08 |
KR20180002083A (ko) | 2018-01-05 |
TW201434163A (zh) | 2014-09-01 |
KR20160140962A (ko) | 2016-12-07 |
KR20140043244A (ko) | 2014-04-08 |
KR20090086199A (ko) | 2009-08-11 |
JP2010503238A (ja) | 2010-01-28 |
JP5578509B2 (ja) | 2014-08-27 |
JP2015216365A (ja) | 2015-12-03 |
EP2064710A4 (fr) | 2011-05-04 |
EP2064710A2 (fr) | 2009-06-03 |
TW200836353A (en) | 2008-09-01 |
WO2008030960A3 (fr) | 2008-07-24 |
KR101689747B1 (ko) | 2016-12-27 |
JP5735585B2 (ja) | 2015-06-17 |
MY149475A (en) | 2013-08-30 |
CN101681695A (zh) | 2010-03-24 |
TWI654770B (zh) | 2019-03-21 |
CN103213935A (zh) | 2013-07-24 |
KR101814683B1 (ko) | 2018-01-05 |
TWI587527B (zh) | 2017-06-11 |
KR102087337B1 (ko) | 2020-03-11 |
KR101453419B1 (ko) | 2014-10-23 |
CN101681695B (zh) | 2013-04-10 |
CN103213935B (zh) | 2017-03-01 |
TW201735380A (zh) | 2017-10-01 |
KR101612749B1 (ko) | 2016-04-27 |
JP2013239716A (ja) | 2013-11-28 |
TWI485863B (zh) | 2015-05-21 |
WO2008030960A2 (fr) | 2008-03-13 |
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