MY147183A - Single-wafer etching method for wafer and etching apparatus thereof - Google Patents

Single-wafer etching method for wafer and etching apparatus thereof

Info

Publication number
MY147183A
MY147183A MYPI20080352A MYPI20080352A MY147183A MY 147183 A MY147183 A MY 147183A MY PI20080352 A MYPI20080352 A MY PI20080352A MY PI20080352 A MYPI20080352 A MY PI20080352A MY 147183 A MY147183 A MY 147183A
Authority
MY
Malaysia
Prior art keywords
wafer
etching
gap
etching apparatus
edge
Prior art date
Application number
MYPI20080352A
Other languages
English (en)
Inventor
Takeo Katoh
Tomohiro Hashii
Katsuhiko Murayama
Sakae Koyata
Kazushige Takaishi
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of MY147183A publication Critical patent/MY147183A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
MYPI20080352A 2007-03-30 2008-02-21 Single-wafer etching method for wafer and etching apparatus thereof MY147183A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007090832A JP2008251806A (ja) 2007-03-30 2007-03-30 ウェーハの枚葉式エッチング方法及びそのエッチング装置

Publications (1)

Publication Number Publication Date
MY147183A true MY147183A (en) 2012-11-14

Family

ID=39616494

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20080352A MY147183A (en) 2007-03-30 2008-02-21 Single-wafer etching method for wafer and etching apparatus thereof

Country Status (7)

Country Link
US (1) US20090181546A1 (enExample)
EP (1) EP1975977B1 (enExample)
JP (1) JP2008251806A (enExample)
KR (1) KR100927855B1 (enExample)
CN (1) CN100576457C (enExample)
MY (1) MY147183A (enExample)
TW (1) TW200903622A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
JP2008218545A (ja) * 2007-03-01 2008-09-18 Sumco Corp ウェーハの枚葉式エッチング装置
EP2051530A2 (en) 2007-10-17 2009-04-22 Electronics and Telecommunications Research Institute Video encoding apparatus and method using pipeline technique with variable time slot
TWI465313B (zh) * 2009-04-07 2014-12-21 Kromax Internat Corp 非接觸式定位平臺與定位方法
US20130068264A1 (en) * 2011-09-21 2013-03-21 Nanya Technology Corporation Wafer scrubber apparatus
JPWO2013114589A1 (ja) * 2012-02-01 2015-05-11 三菱電機株式会社 光起電力装置の製造方法および光起電力装置の製造装置
US9589818B2 (en) * 2012-12-20 2017-03-07 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same
TWI569349B (zh) * 2013-09-27 2017-02-01 斯克林集團公司 基板處理裝置及基板處理方法
WO2015184628A1 (en) * 2014-06-06 2015-12-10 Acm Research (Shanghai) Inc. Apparatus and method for removing film on edge of backside of wafer
KR101540885B1 (ko) * 2014-07-29 2015-07-30 주식회사 엘지실트론 웨이퍼의 결함 측정장치
JP6389089B2 (ja) * 2014-09-18 2018-09-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2015213189A (ja) * 2015-07-09 2015-11-26 三菱電機株式会社 光起電力装置の製造方法
CN106971958A (zh) * 2016-01-14 2017-07-21 弘塑科技股份有限公司 单晶圆湿式处理装置
WO2017192994A1 (en) * 2016-05-06 2017-11-09 Applied Materials, Inc. Wafer profiling for etching system
JP6836912B2 (ja) * 2017-01-17 2021-03-03 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
CN110970332B (zh) * 2019-12-18 2022-12-13 深圳市凯新达电子有限公司 一种以二氧化硅矿石为原料的集成电路用晶片检测设备
CN111403323A (zh) * 2020-04-27 2020-07-10 绍兴同芯成集成电路有限公司 一种用于晶圆与环形玻璃载板的蚀刻装置
CN111613512B (zh) * 2020-06-22 2022-10-21 北京北方华创微电子装备有限公司 半导体设备及其工艺腔室
TWI747580B (zh) * 2020-10-28 2021-11-21 辛耘企業股份有限公司 晶圓蝕刻裝置
CN114446815A (zh) * 2020-10-30 2022-05-06 辛耘企业股份有限公司 晶圆蚀刻装置
KR102656188B1 (ko) * 2022-02-21 2024-04-11 (주)디바이스이엔지 기판 식각 처리장치 및 기판 가장자리의 식각 제어 방법
CN114695210B (zh) * 2022-06-02 2022-09-09 西安奕斯伟材料科技有限公司 一种用于硅片边缘刻蚀的装置和方法

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US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
US5364474A (en) * 1993-07-23 1994-11-15 Williford Jr John F Method for removing particulate matter
SG98022A1 (en) * 1996-09-24 2003-08-20 Tokyo Electron Ltd Method and apparatus for cleaning treatment
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US6827814B2 (en) * 2000-05-08 2004-12-07 Tokyo Electron Limited Processing apparatus, processing system and processing method
JP2002064079A (ja) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
EP1372186B1 (de) * 2000-10-31 2008-12-10 Sez Ag Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen
US6770565B2 (en) * 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
KR20030089326A (ko) * 2002-05-17 2003-11-21 삼성전자주식회사 웨이퍼 플랫존 경사면 세정 방법, 세정 장치 및 세정기능을 포함한 웨이퍼 가장자리 노광 장치
US7354869B2 (en) * 2004-04-13 2008-04-08 Kabushiki Kaisha Toshiba Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method
JP2006013107A (ja) * 2004-06-25 2006-01-12 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4601341B2 (ja) * 2004-07-02 2010-12-22 大日本スクリーン製造株式会社 基板処理装置
JP4464293B2 (ja) 2005-02-28 2010-05-19 株式会社高田工業所 半導体基板処理装置及び半導体基板処理方法
JP2007115728A (ja) 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法

Also Published As

Publication number Publication date
EP1975977A1 (en) 2008-10-01
KR20080089241A (ko) 2008-10-06
JP2008251806A (ja) 2008-10-16
TW200903622A (en) 2009-01-16
EP1975977B1 (en) 2011-05-04
US20090181546A1 (en) 2009-07-16
KR100927855B1 (ko) 2009-11-23
CN101276756A (zh) 2008-10-01
CN100576457C (zh) 2009-12-30

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