WO2015184628A1 - Apparatus and method for removing film on edge of backside of wafer - Google Patents

Apparatus and method for removing film on edge of backside of wafer Download PDF

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Publication number
WO2015184628A1
WO2015184628A1 PCT/CN2014/079323 CN2014079323W WO2015184628A1 WO 2015184628 A1 WO2015184628 A1 WO 2015184628A1 CN 2014079323 W CN2014079323 W CN 2014079323W WO 2015184628 A1 WO2015184628 A1 WO 2015184628A1
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WO
WIPO (PCT)
Prior art keywords
wafer
vacuum chuck
vacuum
sealing ring
groove
Prior art date
Application number
PCT/CN2014/079323
Other languages
French (fr)
Inventor
Xiaoyan Zhang
Hui Wang
Jun Wu
Cheng Cheng
Fufa Chen
Fuping CHEN
Original Assignee
Acm Research (Shanghai) Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Acm Research (Shanghai) Inc. filed Critical Acm Research (Shanghai) Inc.
Priority to PCT/CN2014/079323 priority Critical patent/WO2015184628A1/en
Priority to CN201480079603.3A priority patent/CN107615443B/en
Priority to KR1020177000377A priority patent/KR102301413B1/en
Publication of WO2015184628A1 publication Critical patent/WO2015184628A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention generally relates to an apparatus and method for removing film on edge of backside of wafer, and more particularly to an apparatus and method which not only removes film on edge of backside of wafer, but also prevents film on center area of backside of wafer from being damaged.
  • an epitaxy process generally includes the following steps: crystal growth, slicing, edge profiling, lapping, etching, backside treatment, polishing, cleaning, epitaxy growth, etc.
  • the step of backside treatment is more commonly used in a heavy doped epitaxy process.
  • dopant or impurities in the wafer are introduced into an epitaxial layer at the temperature of about 1100 ° C , causing the concentration of detrimental impurities to rise or even to form new micro- defects in the epitaxial layer. Therefore, it is necessary to form a thin film on the backside of the wafer.
  • the thin film functions as a sealing layer and prevents the dopant or impurities from introducing into the epitaxial layer.
  • the material of the thin film can be one of the following: SiO 2 , Si 3 N 4 , polycrystalline silicon, etc.
  • the thin film, for example SiO 2 thin film is formed on the backside of the wafer through CVD (Chemical Vapor Deposition) and the like.
  • the subsequent process is to remove the SiO 2 thin film formed on the edge of backside of the wafer. Because in the process of forming SiO 2 thin film, the SiO 2 thin film not only forms on the backside of the wafer, but also forms on the chamfers, the front surface and the edge of backside of the wafer. The SiO 2 thin film formed on the chamfers, the front surface and the edge of backside of the wafer is undesired and shall be removed.
  • a traditional method for removing the SiO 2 thin film formed on the edge of backside of the wafer is utilizing HF solution or HF vapor to etch the SiO 2 thin film.
  • the SiO 2 thin film formed on about 0.5-3mm from the outermost peripheral edge of backside of the wafer needs to be removed and the thickness of the SiO 2 thin film is about 0.3-3 ⁇ .
  • a widely used apparatus for removing the SiO 2 thin film on the edge of backside of the wafer employs a seal ring to isolate the edge area from the center area of backside of the wafer. Then the HF solution or HF vapor is sprayed on the edge area of backside of the wafer to remove the SiO 2 thin film formed thereon.
  • the sealing effect of the apparatus is barely satisfactory, which may cause the SiO 2 thin film formed on the center area of backside of the wafer be removed at the time when the SiO 2 thin film formed on the edge area of backside of the wafer is etched.
  • the area of backside of the wafer except for the edge area is defined as the center area.
  • an object of the present invention is to provide apparatuses and methods which not only remove film on edge of backside of wafer, but also prevent film on center area of backside of wafer from being damaged.
  • an apparatus for removing a film on edge of backside of wafer includes a vacuum chuck having an inner groove and an outer groove defined at the peripheral edge of the vacuum chuck, an inner sealing ring disposed in the inner groove; and an outer sealing ring disposed in the outer groove.
  • the space defined by the wafer and the area of the vacuum chuck encircled by the inner sealing ring is vacuumized for holding and positioning the wafer on the vacuum chuck, and the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck is filled with pressurized gas for making the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck maintain positive pressure for preventing liquid from getting into the center area of the backside of the wafer.
  • an apparatus for removing a film on edge of backside of wafer includes a vacuum chuck having an inner groove and an outer groove defined at the peripheral edge of the vacuum chuck and an inner sealing ring disposed in the inner groove.
  • a method for removing a film on edge of backside of wafer includes the following steps: putting a wafer on a vacuum chuck of an apparatus; vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck; supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer sealing ring disposed in an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck with the pressurized gas, therefore making the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck maintain positive pressure; driving the vacuum chuck rotating at a rotational speed; spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer
  • a method for removing a film on edge of backside of wafer includes the following steps: putting a wafer on a vacuum chuck of an apparatus; vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck; supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck with the pressurized gas, therefore making the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck exceed atmospheric pressure; driving the vacuum chuck rotating at a rotational speed; spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer; cleaning the wafer; drying the
  • FIG. 1 is a perspective view of an apparatus for removing a film on an edge of backside of a wafer according to a first embodiment of the present invention
  • FIG. 2 is a top view of the apparatus shown in FIG. 1 ;
  • FIG. 3 is a top view of the apparatus shown in FIG. 1 without sealing rings;
  • FIG. 4 is a cross-sectional view of the apparatus shown in FIG. 1;
  • FIG. 5 is an enlarged view of portion A shown in FIG. 4;
  • FIG. 6 is another cross-sectional view of the apparatus shown in FIG. 1;
  • FIG. 7 is an enlarged view of portion B shown in FIG. 6;
  • FIG. 8 is a perspective view of the apparatus shown in FIG. 1 in working status
  • FIG. 9 is a cross-sectional view of the apparatus shown in FIG. 1 in working status
  • FIG. 10 is an enlarged view of portion C shown in FIG. 9;
  • FIG. 11 is a perspective view of an apparatus for removing a film on an edge of backside of a wafer according to a second embodiment of the present invention.
  • FIG. 12 is a cross-sectional view of the apparatus shown in FIG. 11;
  • FIG. 13 is an enlarged view of portion D shown in FIG. 12;
  • FIG. 14 is a perspective view of an apparatus for removing a film on an edge of backside of a wafer according to a third embodiment of the present invention.
  • FIG. 15 is a cross-sectional view of the apparatus shown in FIG. 14.
  • FIG. 16 is an enlarged view of portion E shown in FIG. 15.
  • the apparatus 100 includes a vacuum chuck 110, a supporting platform 120, a supporting shaft 130 and an actuator 140.
  • the vacuum chuck 110 is fixed on the supporting platform 120 by, such as a plurality of screws 150.
  • the supporting platform 120 is disposed on the supporting shaft 130.
  • the actuator 140 drives the supporting platform 120 to rotate, the supporting platform 120 further drives the vacuum chuck 110 to rotate along with the supporting platform 120.
  • the vacuum chuck 110 of the apparatus 100 forms a ring-shaped inner groove 111 on a top surface thereof.
  • the width of the inner groove 111 gradually narrows from bottom to top.
  • the top surface of the vacuum chuck 110 further defines several interconnected vacuum slots 112 which are connected to the inner groove 111.
  • Several vacuum passages 113 vertically pass through the vacuum chuck 110 and connect to the vacuum slots 112.
  • the space defined by the wafer and the area of the vacuum chuck 110 encircled by the inner groove 111 can be vacuumized for holding and positioning the wafer on the vacuum chuck 110.
  • the top surface of the vacuum chuck 110 further defines a vacuum groove 114 (shown in FIG. 4).
  • the vacuum groove 114 is ring- shaped and is close to the centre point of the vacuum chuck 110.
  • the inner groove 111 and the vacuum groove 114 are concentric rings, and the distance between the inner groove 111 and the centre point of the vacuum chuck 110 is greater than the distance between the vacuum groove 114 and the centre point of the vacuum chuck 110.
  • a sealing member 115 of which can be made of rubber or the like is disposed in the vacuum groove 114 for improving the airtightness of the vacuum chuck 110.
  • the sealing member 115 has a horizontal part and a lateral part approximately vertically connecting to the horizontal part and gradually extending outward from the horizontal part.
  • the horizontal part of the sealing member 115 is fixed in the vacuum groove 114 by a fixing member 116 and a plurality of screws.
  • the lateral part of the sealing member 115 is pressed against the top surface of the vacuum chuck 110 when the wafer is held and positioned on the vacuum chuck 110 by vacuum suction.
  • the area of the vacuum chuck 110 which is encircled by the vacuum groove 114 forms several interconnected vacuum slots 117 connecting to the vacuum groove 114 and several vacuum passages 118 vertically passing through the vacuum chuck 110 and connecting to the vacuum slots 117. Through the vacuum passages 118 and the vacuum slots 117, the space defined by the wafer and the area of the vacuum chuck 110 encircled by the sealing member 115 can be vacuumized for holding and positioning the wafer on the vacuum chuck 110.
  • the top surface of the vacuum chuck 110 forms an outer groove 1113 at the peripheral edge of the vacuum chuck 110.
  • the top surface of the vacuum chuck 110 defines a gas flow groove 1111 between the inner groove 111 and the outer groove 1113.
  • the inner groove 111, the gas flow groove 1111 and outer groove 1113 are concentric rings.
  • a plurality of first gas holes 1112 are defined and evenly distributed in the gas flow groove 1111, through which supply pressurized gas to fill the space defined by the wafer and the area between the inner groove 111 and the outer groove 1113 of the vacuum chuck 110, therefore making the space maintain positive pressure.
  • the positive pressure is an atmospheric pressure.
  • the positive pressure is greater than an atmospheric pressure.
  • the positive pressure is 1-1.5 atmospheres and 1.2 atmospheres is better.
  • a plurality of second gas holes 1114 (shown in FIG. 5) are defined in the outer groove 1113. Each of the first gas holes 1112 and corresponding each of the second gas holes
  • An inner sealing ring 1115 is disposed in the inner groove 111 and an outer sealing ring 1116 is disposed in the outer groove 1113 for preventing liquid from getting into a center area of the backside of the wafer when a peripheral edge of the backside of the wafer is treated.
  • the area of the backside of the wafer except for the peripheral edge is defined as the center area.
  • a cross profile of the inner sealing ring 1115 and the outer sealing ring 1116 is circular.
  • the outer groove 1113 protrudes towards the center of the vacuum chuck 110 to form a notch 1117, and a pin 1118 is disposed in the outer groove 1113 and opposite to the notch 1117.
  • the outer sealing ring 1116 is disposed in the outer groove 1113, the outer sealing ring 1116 is squeezed in the notch 1117 by the pin 1118, so the sealing effect at the location of the notch of the wafer is improved.
  • a retaining wall 1119 is formed at a peripheral edge of the outer groove 1113 to restrict the outer sealing ring 1116 in the outer groove 1113.
  • the height of the retaining wall 1119 is lower than the height of the outer sealing ring 1116 so that the liquid can be sprayed to the peripheral edge of the backside of the wafer.
  • a plurality of through-holes 1120 are defined at the bottom of the retaining wall 1119 for the liquid gathered in the outer groove 1113 draining out of the outer groove 1113.
  • the inner sealing ring 1115 and the outer sealing ring 1116 are made of a corrosion-resistant material, that means a kind of material which can resist corrosion of the liquid sprayed to the peripheral edge of the backside of the wafer.
  • the material can be, such as viton, Polytetrafluoroethylene (PTFE), etc.
  • PTFE Polytetrafluoroethylene
  • the advantage of having a height difference between the inner sealing ring 1115 and the outer sealing ring 1116 is that when the wafer is put on the vacuum chuck 110, the wafer firstly contacts the outer sealing ring 1116 and then the vacuum chuck 110 is vacuumized to hold and position the wafer on the vacuum chuck 110, which can improve the sealing effect.
  • the vacuum chuck 110 defines a plurality of the gas passages 1121.
  • One end of every gas passage 1121 connects to one first gas hole 1112 and one second gas hole 1114 for supplying the pressurized gas to the gas flow groove 1111 and the outer groove 1113.
  • the other end of every gas passage 1121 connects to an end of a gas channel 121 defined in the supporting platform 120.
  • the supporting platform 120 includes a horizontal platform 125 for supporting the vacuum chuck 110 thereon and a vertical axle 126 connecting with the horizontal platform 125.
  • the vertical axle 126 of the supporting platform 120 is received in the supporting shaft 130.
  • the actuator 140 connects to the vertical axle 126 and drives the vertical axle 126 rotating in the supporting shaft 130 which is non-rotating.
  • the gas channel 121 passes through the horizontal platform 125 and the vertical axle 126 of the supporting platform 120.
  • the end of the gas channel 121 which is located in the horizontal platform 125 connects with the other end of one gas passage 1121.
  • the other end of the gas channel 121 which is located in the vertical axle 126 connects with an annular gas chamber 131 defined in the supporting shaft 130.
  • the annular gas chamber 131 further connects with a pressurized gas source through a gas inlet 132 defined on the supporting shaft 130. Every vacuum passage 113 and vacuum passage 118 are respectively connected to a vacuum channel 123 defined in the supporting platform 120.
  • the vacuum channel 123 passes through the horizontal platform 125 and the vertical axle 126 of the supporting platform 120.
  • the end of the vacuum channel 123 located in the horizontal platform 125 connects to one vacuum passage 113 and one vacuum passage 118.
  • the other end of the vacuum channel 123 located in the vertical axle 126 connects with an annular vacuum chamber 133 defined in the supporting shaft 130.
  • the annular vacuum chamber 133 further connects with a vacuum source through a vacuum inlet 134 defined on the supporting shaft 130.
  • FIG. 8 to FIG. 10 disclose a film formed on an edge of a backside of a wafer 160 is removed by using the apparatus 100.
  • the wafer 160 is transferred to the vacuum chuck 110 and the backside of the wafer 160 faces the vacuum chuck 110.
  • the center of the wafer 160 is aligned to the center of the vacuum chuck 110 by using a pre-alignment apparatus.
  • the notch of the wafer 160 is aligned to the notch 1117 of the vacuum chuck 110.
  • the backside of the wafer 160 firstly contacts the outer sealing ring 1116, and then the vacuum source is opened to vacuumize the space defined by the wafer 160 and the area of the vacuum chuck 110 encircled by the inner sealing ring 1115 through the vacuum passage 113, the vacuum passage 118, the vacuum channel 123, the annular vacuum chamber 133 and the vacuum inlet 134 for holding and positioning the wafer 160 on the vacuum chuck 110.
  • the pressurized gas source is opened to supply the pressurized gas to the first gas holes 1112 and the second gas holes 1114 through the gas inlet 132, the annular gas chamber 131, the gas channel 121 and the gas passage 1121.
  • the space defined by the wafer 160 and the area between the inner sealing ring 1115 and the outer sealing ring 1116 of the vacuum chuck 110 is filled with the pressurized gas for making the space defined by the wafer 160 and the area between the inner sealing ring 1115 and the outer sealing ring 1116 of the vacuum chuck 110 maintain positive pressure.
  • the positive pressure is an atmospheric pressure.
  • the positive pressure is greater than an atmospheric pressure.
  • the positive pressure is 1-1.5 atmospheres and 1.2 atmospheres is better.
  • the gas can be N 2 or CDA, or the like.
  • a method for detecting the airtightness of the apparatus 100 includes vacuating the vacuum chuck 110 and observing whether the vacuum pressure is changed, and increasing the pressure of the pressurized gas and observing whether the pressure of the pressurized gas is changed. If the airtightness of the apparatus 100 is good, the actuator 140 drives the supporting platform 120 and the vacuum chuck 110 rotating at a special rotational speed. The rotational speed is generally about 50- 1500rpm.
  • a nozzle 170 is employed to spray the etchant to the front surface of the wafer 160 and the etchant flows to the edge of the backside of the wafer 160 by the refluxing of the edge of the wafer 160.
  • the etchant has a chemical reaction with the film formed on the edge of the backside of the wafer 160 to remove the film.
  • the advantage of making the space defined by the wafer 160 and the area between the inner sealing ring 1115 and the outer sealing ring 1116 of the vacuum chuck 110 maintain positive pressure is for preventing liquid, such as the etchant, from getting into the center area of the backside of the wafer 160.
  • the advantage of supplying the pressurized gas to the second gas holes 1114 is for avoiding liquid, such as the etchant remaining at the contact part of the outer sealing ring 1116 and the wafer 160, therefore forming a gas curtain to prevent the etchant from infiltrating into the center area of the backside of the wafer 160.
  • the nozzle 170 is employed to spray deionized water to the wafer 160 to clean the wafer 160.
  • the actuator 140 drives the supporting platform 120 and the vacuum chuck 110 rotating at a high rotational speed to dry the wafer 160.
  • the rotational speed is generally about 1000-3000rpm.
  • a nozzle 180 is employed to spray N 2 to the surface of the wafer 160 to further dry the wafer 160.
  • the pressurized gas source is closed to stop supplying the pressurized gas to the first gas holes 1112 and the second gas holes 1114.
  • the vacuum chuck 110 releases the wafer 160.
  • the wafer 160 is taken away from the vacuum chuck 110.
  • the apparatus 200 includes a vacuum chuck 210, a supporting platform 220, a supporting shaft 230 and an actuator 240.
  • the vacuum chuck 210 is fixed on the supporting platform 220.
  • the supporting platform 220 is disposed on the supporting shaft 230.
  • the actuator 240 drives the supporting platform 220 rotating, which further drives the vacuum chuck 210 rotating along with the supporting platform 220.
  • an inner groove and an outer groove of the vacuum chuck 210 are regular square shape.
  • An inner sealing ring 2115 and an outer sealing ring 2116 are respectively fixed in the inner groove and an outer groove by an inner fixing ring 2122 and an outer fixing ring 2123.
  • a cross profile of the inner sealing ring 2115 and the outer sealing ring 2116 is L- shape.
  • the apparatus 300 includes a vacuum chuck 310, a supporting platform 320, a supporting shaft 330 and an actuator 340.
  • the vacuum chuck 310 is fixed on the supporting platform 320.
  • the supporting platform 320 is disposed on the supporting shaft 330.
  • the actuator 340 drives the supporting platform 320 rotating, which further drives the vacuum chuck 310 rotating along with the supporting platform 320.
  • an outer groove 3113 of the vacuum chuck 310 is L-shaped and defined at the peripheral edge of the vacuum chuck 310.
  • the space defined by the wafer and the area of the vacuum chuck 310 encircled by the inner sealing ring 3115 is vacuumized for holding and positioning the wafer on the vacuum chuck 310.
  • the space defined by the wafer and the area between the inner sealing ring 3115 and the outer groove 3113 of the vacuum chuck 110 is filled with pressurized gas for making the gas pressure of the space defined by the wafer and the area between the inner sealing ring 3115 and the outer groove 3113 of the vacuum chuck 110 exceed atmospheric pressure, which can prevent liquid from getting into the center area of the backside of the wafer.
  • a method for removing a film on an edge of backside of a wafer includes the following steps:
  • step 1 putting a wafer on a vacuum chuck of an apparatus
  • step 2 vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck;
  • step 3 supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer sealing ring disposed in an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck with the pressurized gas, therefore making the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck maintain positive pressure;
  • step 4 driving the vacuum chuck rotating at a rotational speed
  • step 5 spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer;
  • step 6 cleaning the wafer
  • step 7 drying the wafer
  • step 8 stopping supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck;
  • step 9 releasing the wafer
  • step 10 taking the wafer away from the vacuum chuck.
  • step 1 further including aligning the center of the wafer to the center of the vacuum chuck and aligning a notch of the wafer to a notch of the vacuum chuck.
  • the positive pressure is an atmospheric pressure or the positive pressure is 1-1.5 atmospheres and 1.2 atmospheres is better.
  • the gas can be N 2 or CDA, or the like.
  • a method for detecting the airtightness of the apparatus includes vacuating the vacuum chuck and observing whether the vacuum pressure is changed, and increasing the pressure of the pressurized gas and observing whether the pressure of the pressurized gas is changed.
  • step 4 the rotational speed is generally about 50-1500rpm.
  • step 6 further including spraying deionized water to the wafer to clean the wafer.
  • step 7 further including rotating the vacuum chuck at a high rotational speed to dry the wafer.
  • the rotational speed is generally about 1000- 3000rpm.
  • spray N 2 to the surface of the wafer to dry the wafer.
  • a method for removing film on edge of backside of wafer includes the following steps:
  • step 20 putting a wafer on a vacuum chuck of an apparatus
  • step 21 vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck;
  • step 22 supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck with the pressurized gas, therefore making the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck exceed atmospheric pressure;
  • step 23 driving the vacuum chuck rotating at a rotational speed
  • step 24 spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer;
  • step 25 cleaning the wafer
  • step 26 drying the wafer
  • step 27 stopping supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck;
  • step 28 releasing the wafer
  • step 29 taking the wafer away from the vacuum chuck.
  • step 20 further including aligning the center of the wafer to the center of the vacuum chuck and aligning a notch of the wafer to a notch of the vacuum chuck.
  • the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck is 1-1.5 atmospheres and 1.2 atmospheres is better.
  • the gas can be N 2 or CDA, or the like.
  • a method for detecting the airtightness of the apparatus includes vacuating the vacuum chuck and observing whether the vacuum pressure is changed, and increasing the pressure of the pressurized gas and observing whether the pressure of the pressurized gas is changed.
  • step 23 the rotational speed is generally about 50-1500rpm.
  • step 25 further including spraying deionized water to the wafer to clean the wafer.
  • step 26 further including rotating the vacuum chuck at a high rotational speed to dry the wafer.
  • the rotational speed is generally about 1000- 3000rpm.
  • spray N 2 to the surface of the wafer to dry the wafer.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)

Abstract

An apparatus and a method for removing a film on edge of backside of a wafer. The apparatus includes a vacuum chuck (110) having an inner groove (111) and an outer groove (1113) defined at the peripheral edge of the vacuum chuck (110), an inner sealing ring (1115) disposed in the inner groove (111); and an outer sealing ring (1116) disposed in the outer groove (1113). When the wafer is put on the vacuum chuck (110), the space defined by the wafer and the area of the vacuum chuck (110) encircled by the inner sealing ring (1115) is vacuumized for holding and positioning the wafer on the vacuum chuck (110), and the space defined by the wafer and the area between the inner sealing ring (1115) and the outer sealing ring (1116) of the vacuum chuck (110) is filled with pressurized gas for making the space defined by the wafer and the area between the inner sealing ring (1115)and the outer sealing ring (1116) of the vacuum chuck (110) maintain positive pressure for preventing liquid from getting into the center area of the backside of the wafer.

Description

APPARATUS AND METHOD FOR REMOVING FILM ON EDGE OF BACKSIDE
OF WAFER
BACKGROUND OF THE INVENTION
1. Field of the Invention
[0001] The present invention generally relates to an apparatus and method for removing film on edge of backside of wafer, and more particularly to an apparatus and method which not only removes film on edge of backside of wafer, but also prevents film on center area of backside of wafer from being damaged.
2. The Related Art
[0002] In the field of integrated circuit manufacture, an epitaxy process generally includes the following steps: crystal growth, slicing, edge profiling, lapping, etching, backside treatment, polishing, cleaning, epitaxy growth, etc.
[0003] The step of backside treatment is more commonly used in a heavy doped epitaxy process. During fabricating a heavy doped wafer, dopant or impurities in the wafer are introduced into an epitaxial layer at the temperature of about 1100°C , causing the concentration of detrimental impurities to rise or even to form new micro- defects in the epitaxial layer. Therefore, it is necessary to form a thin film on the backside of the wafer. The thin film functions as a sealing layer and prevents the dopant or impurities from introducing into the epitaxial layer. The material of the thin film can be one of the following: SiO2, Si3N4, polycrystalline silicon, etc. The thin film, for example SiO2 thin film, is formed on the backside of the wafer through CVD (Chemical Vapor Deposition) and the like.
[0004] After the SiO2 thin film is formed on the backside of the wafer, the subsequent process is to remove the SiO2 thin film formed on the edge of backside of the wafer. Because in the process of forming SiO2 thin film, the SiO2 thin film not only forms on the backside of the wafer, but also forms on the chamfers, the front surface and the edge of backside of the wafer. The SiO2 thin film formed on the chamfers, the front surface and the edge of backside of the wafer is undesired and shall be removed. A traditional method for removing the SiO2 thin film formed on the edge of backside of the wafer is utilizing HF solution or HF vapor to etch the SiO2 thin film. The SiO2 thin film formed on about 0.5-3mm from the outermost peripheral edge of backside of the wafer needs to be removed and the thickness of the SiO2 thin film is about 0.3-3μπι. At present, a widely used apparatus for removing the SiO2 thin film on the edge of backside of the wafer employs a seal ring to isolate the edge area from the center area of backside of the wafer. Then the HF solution or HF vapor is sprayed on the edge area of backside of the wafer to remove the SiO2 thin film formed thereon. However, the sealing effect of the apparatus is barely satisfactory, which may cause the SiO2 thin film formed on the center area of backside of the wafer be removed at the time when the SiO2 thin film formed on the edge area of backside of the wafer is etched. The area of backside of the wafer except for the edge area is defined as the center area.
SUMMARY
[0005] Accordingly, an object of the present invention is to provide apparatuses and methods which not only remove film on edge of backside of wafer, but also prevent film on center area of backside of wafer from being damaged.
[0006] In one embodiment, an apparatus for removing a film on edge of backside of wafer includes a vacuum chuck having an inner groove and an outer groove defined at the peripheral edge of the vacuum chuck, an inner sealing ring disposed in the inner groove; and an outer sealing ring disposed in the outer groove. When a wafer is put on the vacuum chuck, the space defined by the wafer and the area of the vacuum chuck encircled by the inner sealing ring is vacuumized for holding and positioning the wafer on the vacuum chuck, and the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck is filled with pressurized gas for making the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck maintain positive pressure for preventing liquid from getting into the center area of the backside of the wafer.
[0007] In another embodiment, an apparatus for removing a film on edge of backside of wafer includes a vacuum chuck having an inner groove and an outer groove defined at the peripheral edge of the vacuum chuck and an inner sealing ring disposed in the inner groove. When a wafer is put on the vacuum chuck, the space defined by the wafer and the area of the vacuum chuck encircled by the inner sealing ring is vacuumized for holding and positioning the wafer on the vacuum chuck, and the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck is filled with pressurized gas for making the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck exceed atmospheric pressure for preventing liquid from getting into the center area of the backside of the wafer.
[0008] According to one embodiment, a method for removing a film on edge of backside of wafer includes the following steps: putting a wafer on a vacuum chuck of an apparatus; vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck; supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer sealing ring disposed in an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck with the pressurized gas, therefore making the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck maintain positive pressure; driving the vacuum chuck rotating at a rotational speed; spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer; cleaning the wafer; drying the wafer; stopping supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck; releasing the wafer; taking the wafer away from the vacuum chuck.
[0009] According to another embodiment, a method for removing a film on edge of backside of wafer includes the following steps: putting a wafer on a vacuum chuck of an apparatus; vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck; supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck with the pressurized gas, therefore making the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck exceed atmospheric pressure; driving the vacuum chuck rotating at a rotational speed; spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer; cleaning the wafer; drying the wafer; stopping supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck; releasing the wafer; taking the wafer away from the vacuum chuck.
BRIEF DESCRIPTION OF THE DRAWINGS
[0010] The present invention will be apparent to those skilled in the art by reading the following description of embodiments thereof, with reference to the attached drawings, in which:
[0011] FIG. 1 is a perspective view of an apparatus for removing a film on an edge of backside of a wafer according to a first embodiment of the present invention;
[0012] FIG. 2 is a top view of the apparatus shown in FIG. 1 ; [0013] FIG. 3 is a top view of the apparatus shown in FIG. 1 without sealing rings;
[0014] FIG. 4 is a cross-sectional view of the apparatus shown in FIG. 1;
[0015] FIG. 5 is an enlarged view of portion A shown in FIG. 4;
[0016] FIG. 6 is another cross-sectional view of the apparatus shown in FIG. 1;
[0017] FIG. 7 is an enlarged view of portion B shown in FIG. 6;
[0018] FIG. 8 is a perspective view of the apparatus shown in FIG. 1 in working status;
[0019] FIG. 9 is a cross-sectional view of the apparatus shown in FIG. 1 in working status;
[0020] FIG. 10 is an enlarged view of portion C shown in FIG. 9;
[0021] FIG. 11 is a perspective view of an apparatus for removing a film on an edge of backside of a wafer according to a second embodiment of the present invention;
[0022] FIG. 12 is a cross-sectional view of the apparatus shown in FIG. 11;
[0023] FIG. 13 is an enlarged view of portion D shown in FIG. 12;
[0024] FIG. 14 is a perspective view of an apparatus for removing a film on an edge of backside of a wafer according to a third embodiment of the present invention;
[0025] FIG. 15 is a cross-sectional view of the apparatus shown in FIG. 14; and
[0026] FIG. 16 is an enlarged view of portion E shown in FIG. 15.
DETAILED DESCRIPTION OF EMBODIMENTS [0027] With reference to FIG. 1, an apparatus for removing a film on an edge of backside of a wafer according to a first embodiment of the present invention is illustrated. The apparatus 100 includes a vacuum chuck 110, a supporting platform 120, a supporting shaft 130 and an actuator 140. The vacuum chuck 110 is fixed on the supporting platform 120 by, such as a plurality of screws 150. The supporting platform 120 is disposed on the supporting shaft 130. The actuator 140 drives the supporting platform 120 to rotate, the supporting platform 120 further drives the vacuum chuck 110 to rotate along with the supporting platform 120.
[0028] Referring to FIG. 2 to FIG. 7, the apparatus 100 will be described in detail by combining the corresponding drawings. As shown in FIG. 2 and FIG. 3, the vacuum chuck 110 of the apparatus 100 forms a ring-shaped inner groove 111 on a top surface thereof. Specially, the width of the inner groove 111 gradually narrows from bottom to top. The top surface of the vacuum chuck 110 further defines several interconnected vacuum slots 112 which are connected to the inner groove 111. Several vacuum passages 113 vertically pass through the vacuum chuck 110 and connect to the vacuum slots 112. Through the vacuum passages 113 and the vacuum slots 112, when a wafer is put on the vacuum chuck 110, the space defined by the wafer and the area of the vacuum chuck 110 encircled by the inner groove 111 can be vacuumized for holding and positioning the wafer on the vacuum chuck 110.
[0029] For holding and positioning the wafer on the vacuum chuck 110 more stably and securely, preferably, the top surface of the vacuum chuck 110 further defines a vacuum groove 114 (shown in FIG. 4). The vacuum groove 114 is ring- shaped and is close to the centre point of the vacuum chuck 110. The inner groove 111 and the vacuum groove 114 are concentric rings, and the distance between the inner groove 111 and the centre point of the vacuum chuck 110 is greater than the distance between the vacuum groove 114 and the centre point of the vacuum chuck 110. A sealing member 115 of which can be made of rubber or the like is disposed in the vacuum groove 114 for improving the airtightness of the vacuum chuck 110. The sealing member 115 has a horizontal part and a lateral part approximately vertically connecting to the horizontal part and gradually extending outward from the horizontal part. The horizontal part of the sealing member 115 is fixed in the vacuum groove 114 by a fixing member 116 and a plurality of screws. The lateral part of the sealing member 115 is pressed against the top surface of the vacuum chuck 110 when the wafer is held and positioned on the vacuum chuck 110 by vacuum suction. The area of the vacuum chuck 110 which is encircled by the vacuum groove 114 forms several interconnected vacuum slots 117 connecting to the vacuum groove 114 and several vacuum passages 118 vertically passing through the vacuum chuck 110 and connecting to the vacuum slots 117. Through the vacuum passages 118 and the vacuum slots 117, the space defined by the wafer and the area of the vacuum chuck 110 encircled by the sealing member 115 can be vacuumized for holding and positioning the wafer on the vacuum chuck 110.
[0030] The top surface of the vacuum chuck 110 forms an outer groove 1113 at the peripheral edge of the vacuum chuck 110. For making the pressure of the space defined by the wafer and the area between the inner groove 111 and the outer groove
1113 of the vacuum chuck 110 to maintain positive pressure, the top surface of the vacuum chuck 110 defines a gas flow groove 1111 between the inner groove 111 and the outer groove 1113. The inner groove 111, the gas flow groove 1111 and outer groove 1113 are concentric rings. A plurality of first gas holes 1112 are defined and evenly distributed in the gas flow groove 1111, through which supply pressurized gas to fill the space defined by the wafer and the area between the inner groove 111 and the outer groove 1113 of the vacuum chuck 110, therefore making the space maintain positive pressure. In an embodiment, the positive pressure is an atmospheric pressure. In another embodiment, the positive pressure is greater than an atmospheric pressure. Preferably, the positive pressure is 1-1.5 atmospheres and 1.2 atmospheres is better. A plurality of second gas holes 1114 (shown in FIG. 5) are defined in the outer groove 1113. Each of the first gas holes 1112 and corresponding each of the second gas holes
1114 both connect to a gas passage 1121 defined in the vacuum chuck 110.
[0031] There two sealing rings are provided in the embodiment of the present invention. An inner sealing ring 1115 is disposed in the inner groove 111 and an outer sealing ring 1116 is disposed in the outer groove 1113 for preventing liquid from getting into a center area of the backside of the wafer when a peripheral edge of the backside of the wafer is treated. The area of the backside of the wafer except for the peripheral edge is defined as the center area. In an embodiment, a cross profile of the inner sealing ring 1115 and the outer sealing ring 1116 is circular.
[0032] If the wafer has a notch, for matching the notch of the wafer, the outer groove 1113 protrudes towards the center of the vacuum chuck 110 to form a notch 1117, and a pin 1118 is disposed in the outer groove 1113 and opposite to the notch 1117. When the outer sealing ring 1116 is disposed in the outer groove 1113, the outer sealing ring 1116 is squeezed in the notch 1117 by the pin 1118, so the sealing effect at the location of the notch of the wafer is improved.
[0033] Preferably, for avoiding the outer sealing ring 1116 escaping from the outer groove 1113 when the vacuum chuck 110 rotates at a high speed, a retaining wall 1119 is formed at a peripheral edge of the outer groove 1113 to restrict the outer sealing ring 1116 in the outer groove 1113. The height of the retaining wall 1119 is lower than the height of the outer sealing ring 1116 so that the liquid can be sprayed to the peripheral edge of the backside of the wafer. A plurality of through-holes 1120 are defined at the bottom of the retaining wall 1119 for the liquid gathered in the outer groove 1113 draining out of the outer groove 1113.
[0034] The inner sealing ring 1115 and the outer sealing ring 1116 are made of a corrosion-resistant material, that means a kind of material which can resist corrosion of the liquid sprayed to the peripheral edge of the backside of the wafer. The material can be, such as viton, Polytetrafluoroethylene (PTFE), etc. When the inner sealing ring 1115 and the outer sealing ring 1116 are respectively disposed in the inner groove 111 and the outer groove 1113, preferably, the height of the outer sealing ring 1116 is higher than the height of the inner sealing ring 1115. The height difference between the inner sealing ring 1115 and the outer sealing ring 1116 is less than or equal to 5%. The advantage of having a height difference between the inner sealing ring 1115 and the outer sealing ring 1116 is that when the wafer is put on the vacuum chuck 110, the wafer firstly contacts the outer sealing ring 1116 and then the vacuum chuck 110 is vacuumized to hold and position the wafer on the vacuum chuck 110, which can improve the sealing effect.
[0035] Referring to FIG. 1 and FIGS. 4-5, an exemplary embodiment of vacuating the vacuum chuck 110 and supplying the pressurized gas to the vacuum chuck 110 is introduced. The vacuum chuck 110 defines a plurality of the gas passages 1121. One end of every gas passage 1121 connects to one first gas hole 1112 and one second gas hole 1114 for supplying the pressurized gas to the gas flow groove 1111 and the outer groove 1113. The other end of every gas passage 1121 connects to an end of a gas channel 121 defined in the supporting platform 120. The supporting platform 120 includes a horizontal platform 125 for supporting the vacuum chuck 110 thereon and a vertical axle 126 connecting with the horizontal platform 125. The vertical axle 126 of the supporting platform 120 is received in the supporting shaft 130. The actuator 140 connects to the vertical axle 126 and drives the vertical axle 126 rotating in the supporting shaft 130 which is non-rotating. The gas channel 121 passes through the horizontal platform 125 and the vertical axle 126 of the supporting platform 120. The end of the gas channel 121 which is located in the horizontal platform 125 connects with the other end of one gas passage 1121. The other end of the gas channel 121 which is located in the vertical axle 126 connects with an annular gas chamber 131 defined in the supporting shaft 130. The annular gas chamber 131 further connects with a pressurized gas source through a gas inlet 132 defined on the supporting shaft 130. Every vacuum passage 113 and vacuum passage 118 are respectively connected to a vacuum channel 123 defined in the supporting platform 120. The vacuum channel 123 passes through the horizontal platform 125 and the vertical axle 126 of the supporting platform 120. The end of the vacuum channel 123 located in the horizontal platform 125 connects to one vacuum passage 113 and one vacuum passage 118. The other end of the vacuum channel 123 located in the vertical axle 126 connects with an annular vacuum chamber 133 defined in the supporting shaft 130. The annular vacuum chamber 133 further connects with a vacuum source through a vacuum inlet 134 defined on the supporting shaft 130. There is a good airtightness between the vertical axle 126 of the supporting platform 120 and the supporting shaft 130 for preventing vacuum leak and the pressurized gas leak. By defining the annular gas chamber 131 and the annular vacuum chamber 133 in the supporting shaft 130, the apparatus 100 can vacuating the vacuum chuck 110 and supplying the pressurized gas to the vacuum chuck 110 under a rotating state.
[0036] Please refer to FIG. 8 to FIG. 10, which disclose a film formed on an edge of a backside of a wafer 160 is removed by using the apparatus 100. The wafer 160 is transferred to the vacuum chuck 110 and the backside of the wafer 160 faces the vacuum chuck 110. The center of the wafer 160 is aligned to the center of the vacuum chuck 110 by using a pre-alignment apparatus. The notch of the wafer 160 is aligned to the notch 1117 of the vacuum chuck 110. The backside of the wafer 160 firstly contacts the outer sealing ring 1116, and then the vacuum source is opened to vacuumize the space defined by the wafer 160 and the area of the vacuum chuck 110 encircled by the inner sealing ring 1115 through the vacuum passage 113, the vacuum passage 118, the vacuum channel 123, the annular vacuum chamber 133 and the vacuum inlet 134 for holding and positioning the wafer 160 on the vacuum chuck 110. Subsequently, the pressurized gas source is opened to supply the pressurized gas to the first gas holes 1112 and the second gas holes 1114 through the gas inlet 132, the annular gas chamber 131, the gas channel 121 and the gas passage 1121. The space defined by the wafer 160 and the area between the inner sealing ring 1115 and the outer sealing ring 1116 of the vacuum chuck 110 is filled with the pressurized gas for making the space defined by the wafer 160 and the area between the inner sealing ring 1115 and the outer sealing ring 1116 of the vacuum chuck 110 maintain positive pressure. In an embodiment, the positive pressure is an atmospheric pressure. In another embodiment, the positive pressure is greater than an atmospheric pressure. Preferably, the positive pressure is 1-1.5 atmospheres and 1.2 atmospheres is better. The gas can be N2 or CDA, or the like. Before spraying liquid, such as etchant, to the wafer 160, it is better to detect whether the airtightness of the apparatus 100 meets requirement. A method for detecting the airtightness of the apparatus 100 includes vacuating the vacuum chuck 110 and observing whether the vacuum pressure is changed, and increasing the pressure of the pressurized gas and observing whether the pressure of the pressurized gas is changed. If the airtightness of the apparatus 100 is good, the actuator 140 drives the supporting platform 120 and the vacuum chuck 110 rotating at a special rotational speed. The rotational speed is generally about 50- 1500rpm. A nozzle 170 is employed to spray the etchant to the front surface of the wafer 160 and the etchant flows to the edge of the backside of the wafer 160 by the refluxing of the edge of the wafer 160. The etchant has a chemical reaction with the film formed on the edge of the backside of the wafer 160 to remove the film. There also can employ another nozzle to spray the etchant to the edge of the backside of the wafer 160 to remove the film formed on the edge of the backside of the wafer 160. During the process, the advantage of making the space defined by the wafer 160 and the area between the inner sealing ring 1115 and the outer sealing ring 1116 of the vacuum chuck 110 maintain positive pressure is for preventing liquid, such as the etchant, from getting into the center area of the backside of the wafer 160. The advantage of supplying the pressurized gas to the second gas holes 1114 is for avoiding liquid, such as the etchant remaining at the contact part of the outer sealing ring 1116 and the wafer 160, therefore forming a gas curtain to prevent the etchant from infiltrating into the center area of the backside of the wafer 160.
[0037] After the film formed on the edge of the backside of the wafer 160 is removed, the nozzle 170 is employed to spray deionized water to the wafer 160 to clean the wafer 160. Then the actuator 140 drives the supporting platform 120 and the vacuum chuck 110 rotating at a high rotational speed to dry the wafer 160. The rotational speed is generally about 1000-3000rpm. Subsequently, preferably, a nozzle 180 is employed to spray N2 to the surface of the wafer 160 to further dry the wafer 160. At last, the pressurized gas source is closed to stop supplying the pressurized gas to the first gas holes 1112 and the second gas holes 1114. The vacuum chuck 110 releases the wafer 160. The wafer 160 is taken away from the vacuum chuck 110. [0038] Referring to FIG. 11 to FIG. 13, an apparatus for removing a film on an edge of backside of a wafer according to a second embodiment of the present invention is illustrated. The apparatus 200 includes a vacuum chuck 210, a supporting platform 220, a supporting shaft 230 and an actuator 240. The vacuum chuck 210 is fixed on the supporting platform 220. The supporting platform 220 is disposed on the supporting shaft 230. The actuator 240 drives the supporting platform 220 rotating, which further drives the vacuum chuck 210 rotating along with the supporting platform 220.
[0039] Comparing to the apparatus 100, an inner groove and an outer groove of the vacuum chuck 210 are regular square shape. An inner sealing ring 2115 and an outer sealing ring 2116 are respectively fixed in the inner groove and an outer groove by an inner fixing ring 2122 and an outer fixing ring 2123. A cross profile of the inner sealing ring 2115 and the outer sealing ring 2116 is L- shape.
[0040] Referring to FIG. 14 to FIG. 16, an apparatus for removing a film on an edge of backside of a wafer according to a third embodiment of the present invention is illustrated. The apparatus 300 includes a vacuum chuck 310, a supporting platform 320, a supporting shaft 330 and an actuator 340. The vacuum chuck 310 is fixed on the supporting platform 320. The supporting platform 320 is disposed on the supporting shaft 330. The actuator 340 drives the supporting platform 320 rotating, which further drives the vacuum chuck 310 rotating along with the supporting platform 320.
[0041] Comparing to the apparatus 100, an outer groove 3113 of the vacuum chuck 310 is L-shaped and defined at the peripheral edge of the vacuum chuck 310. In this embodiment, there is no outer sealing ring disposed in the outer groove 3113. There is only an inner sealing ring 3115 disposed in an inner groove 311. Because of omitting the outer sealing ring, it is unnecessary for supplying the pressurized gas to the outer groove 3113, so that second gas holes are omitted. When a wafer is put on the vacuum chuck 310 for removing film on edge of backside of the wafer, the space defined by the wafer and the area of the vacuum chuck 310 encircled by the inner sealing ring 3115 is vacuumized for holding and positioning the wafer on the vacuum chuck 310. The space defined by the wafer and the area between the inner sealing ring 3115 and the outer groove 3113 of the vacuum chuck 110 is filled with pressurized gas for making the gas pressure of the space defined by the wafer and the area between the inner sealing ring 3115 and the outer groove 3113 of the vacuum chuck 110 exceed atmospheric pressure, which can prevent liquid from getting into the center area of the backside of the wafer.
[0042] According to one embodiment of the present invention, a method for removing a film on an edge of backside of a wafer includes the following steps:
[0043] step 1: putting a wafer on a vacuum chuck of an apparatus;
[0044] step 2: vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck;
[0045] step 3: supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer sealing ring disposed in an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck with the pressurized gas, therefore making the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck maintain positive pressure;
[0046] step 4: driving the vacuum chuck rotating at a rotational speed;
[0047] step 5: spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer;
[0048] step 6: cleaning the wafer;
[0049] step 7: drying the wafer; [0050] step 8: stopping supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck;
[0051] step 9: releasing the wafer;
[0052] step 10: taking the wafer away from the vacuum chuck.
[0053] In step 1, further including aligning the center of the wafer to the center of the vacuum chuck and aligning a notch of the wafer to a notch of the vacuum chuck.
[0054] In step 3, the positive pressure is an atmospheric pressure or the positive pressure is 1-1.5 atmospheres and 1.2 atmospheres is better. The gas can be N2 or CDA, or the like.
[0055] Before spraying liquid, such as etchant, to the wafer, it is better to detect whether the airtightness of the apparatus meets requirement. A method for detecting the airtightness of the apparatus includes vacuating the vacuum chuck and observing whether the vacuum pressure is changed, and increasing the pressure of the pressurized gas and observing whether the pressure of the pressurized gas is changed.
[0056] In step 4, the rotational speed is generally about 50-1500rpm.
[0057] In step 6, further including spraying deionized water to the wafer to clean the wafer.
[0058] In step 7, further including rotating the vacuum chuck at a high rotational speed to dry the wafer. The rotational speed is generally about 1000- 3000rpm. Subsequently, spray N2 to the surface of the wafer to dry the wafer.
[0059] According to another embodiment of the present invention, a method for removing film on edge of backside of wafer includes the following steps:
[0060] step 20: putting a wafer on a vacuum chuck of an apparatus; [0061] step 21: vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck;
[0062] step 22: supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck with the pressurized gas, therefore making the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck exceed atmospheric pressure;
[0063] step 23: driving the vacuum chuck rotating at a rotational speed;
[0064] step 24: spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer;
[0065] step 25: cleaning the wafer;
[0066] step 26: drying the wafer;
[0067] step 27: stopping supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck;
[0068] step 28: releasing the wafer;
[0069] step 29: taking the wafer away from the vacuum chuck.
[0070] In step 20, further including aligning the center of the wafer to the center of the vacuum chuck and aligning a notch of the wafer to a notch of the vacuum chuck.
[0071] In step 22, the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck is 1-1.5 atmospheres and 1.2 atmospheres is better. The gas can be N2 or CDA, or the like. [0072] Before spraying liquid, such as etchant, to the wafer, it is better to detect whether the airtightness of the apparatus meets requirement. A method for detecting the airtightness of the apparatus includes vacuating the vacuum chuck and observing whether the vacuum pressure is changed, and increasing the pressure of the pressurized gas and observing whether the pressure of the pressurized gas is changed.
[0073] In step 23, the rotational speed is generally about 50-1500rpm.
[0074] In step 25, further including spraying deionized water to the wafer to clean the wafer.
[0075] In step 26, further including rotating the vacuum chuck at a high rotational speed to dry the wafer. The rotational speed is generally about 1000- 3000rpm. Subsequently, spray N2 to the surface of the wafer to dry the wafer.
[0076] The foregoing description of the present invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. Such modifications and variations that may be apparent to those skilled in the art are intended to be included within the scope of this invention as defined by the accompanying claims.

Claims

What is claimed is:
1. An apparatus for removing a film on an edge of backside of a wafer, comprising:
a vacuum chuck having an inner groove and an outer groove, the inner groove positioned in a place corresponding to an center area of the wafer, the outer groove positioned at the peripheral edge of the vacuum chuck;
an inner sealing ring disposed in the inner groove; and
an outer sealing ring disposed in the outer groove;
wherein when a wafer is put on the vacuum chuck, the space defined by the wafer and the area of the vacuum chuck encircled by the inner sealing ring is vacuumized for holding and positioning the wafer on the vacuum chuck, and the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck is filled with pressurized gas for making the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck maintain positive pressure for preventing liquid from getting into the center area of the backside of the wafer.
2. The apparatus as claimed in claim 1, wherein the positive pressure is an atmospheric pressure.
3. The apparatus as claimed in claim 1, wherein the positive pressure is greater than an atmospheric pressure.
4. The apparatus as claimed in claim 3, wherein the positive pressure is 1-1.5 atmospheres.
5. The apparatus as claimed in claim 4, wherein the positive pressure is 1.2 atmospheres.
6. The apparatus as claimed in claim 1, wherein the gas is N2 or CDA.
7. The apparatus as claimed in claim 1, wherein the vacuum chuck further has a gas flow groove between the inner groove and the outer groove, a plurality of first gas holes are evenly formed in the gas flow groove, the pressurized gas is supplied through the first gas holes for filling the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck with the pressurized gas.
8. The apparatus as claimed in claim 7, wherein the gas flow groove, the inner groove and the outer groove are concentric circles.
9. The apparatus as claimed in claim 1, wherein a cross profile of the inner sealing ring and the outer sealing ring is circular.
10. The apparatus as claimed in claim 1, wherein the inner sealing ring and the outer sealing ring are made of a corrosion-resistant material.
11. The apparatus as claimed in claim 10, wherein the inner sealing ring and the outer sealing ring are made of viton or Polytetrafluoroethylene.
12. The apparatus as claimed in claim 1, wherein the height of the outer sealing ring is higher than the height of the inner sealing ring.
13. The apparatus as claimed in claim 12, wherein the height difference between the inner sealing ring and the outer sealing ring is less than or equal to 5%.
14. The apparatus as claimed in claim 1, wherein the vacuum chuck further comprising a retaining wall formed at a peripheral edge of the outer groove for restricting the outer sealing ring in the outer groove.
15. The apparatus as claimed in claim 14, wherein the height of the retaining wall is lower than the height of the outer sealing ring so that the liquid can be sprayed to the edge of the backside of the wafer.
16. The apparatus as claimed in claim 14, wherein the vacuum chuck further comprising a plurality of through-holes formed at the bottom of the retaining wall for draining the liquid gathered in the outer groove out of the outer groove.
17. The apparatus as claimed in claim 1, wherein the outer groove protrudes towards the center of the vacuum chuck to form a notch, and a pin is disposed in the outer groove and opposite to the notch for squeezing the outer sealing ring in the notch.
18. The apparatus as claimed in claim 1, wherein the width of the inner groove gradually narrows from bottom to top.
19. The apparatus as claimed in claim 1, wherein the vacuum chuck comprises: several interconnected vacuum slots which are connected to the inner groove; several vacuum passages vertically pass through the vacuum chuck and connect to the vacuum slots;
wherein the space defined by the wafer and the area of the vacuum chuck encircled by the inner sealing ring is vacuumized through the vacuum passages and the vacuum slots for holding and positioning the wafer on the vacuum chuck.
20. The apparatus as claimed in claim 1, wherein the vacuum chuck comprises a vacuum groove, the vacuum groove is ring-shaped and is close to the centre point of the vacuum chuck, the area of the vacuum chuck which is encircled by the vacuum groove defines several interconnected vacuum slots connecting to the vacuum groove and several vacuum passages vertically passing through the vacuum chuck and connecting to the vacuum slots, wherein the space defined by the wafer and the area of the vacuum chuck encircled by the vacuum groove is vacuumized through the vacuum passages and the vacuum slots for holding and positioning the wafer on the vacuum chuck.
21. The apparatus as claimed in claim 20, wherein the vacuum chuck further comprising a sealing member disposed in the vacuum groove, the sealing member having a horizontal part and a lateral part approximately vertically connecting to the horizontal part and gradually extending outward from the horizontal part, the horizontal part of the sealing member fixed in the vacuum groove by a fixing member, the lateral part of the sealing member pressed against a top surface of the vacuum chuck.
22. The apparatus as claimed in claim 1, further comprising a supporting platform, a supporting shaft and an actuator, the supporting platform including a horizontal platform for supporting the vacuum chuck and a vertical axle connecting with the horizontal platform and received in the supporting shaft, the actuator connecting to the vertical axle and driving the vertical axle rotating in the supporting shaft, which further drives the vacuum chuck rotating along with the supporting platform.
23. The apparatus as claimed in claim 22, wherein the vacuum chuck defines a plurality of gas passages for supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck with the pressurized gas.
24. The apparatus as claimed in claim 23, wherein every gas passage connects with an end of a gas channel defined in the supporting platform, the gas channel passes through the horizontal platform and the vertical axle of the supporting platform, an end of the gas channel which is located in the horizontal platform connects with the gas passage, the other end of the gas channel which is located in the vertical axle connects with an annular gas chamber defined in the supporting shaft, the annular gas chamber further connects with a pressurized gas source through a gas inlet defined on the supporting shaft.
25. The apparatus as claimed in claim 23, wherein the vacuum chuck defines a plurality of second gas holes in the outer groove, the second gas holes are connected to the gas passages.
26. The apparatus as claimed in claim 22, wherein the supporting platform defines a vacuum channel for vacuumizing the vacuum chuck, the vacuum channel passes through the horizontal platform and the vertical axle of the supporting platform, an end of the vacuum channel located in the horizontal platform connects with the vacuum chuck, the other end of the vacuum channel located in the vertical axle connects with an annular vacuum chamber defined in the supporting shaft, the annular vacuum chamber further connects with a vacuum source through a vacuum inlet defined on the supporting shaft.
27. The apparatus as claimed in claim 1, wherein the inner groove and the outer groove of the vacuum chuck are regular square shape, and a cross profile of the inner sealing ring and the outer sealing ring is L- shaped.
28. The apparatus as claimed in claim 27, wherein the inner sealing ring and the outer sealing ring are respectively fixed in the inner groove and the outer groove by an inner fixing ring and an outer fixing ring.
29. An apparatus for removing a film on an edge of backside of a wafer, comprising:
a vacuum chuck having an inner groove and an outer groove, the inner groove positioned in a place corresponding to an center area of the wafer, the outer groove positined at the peripheral edge of the vacuum chuck; and
an inner sealing ring disposed in the inner groove;
wherein when a wafer is put on the vacuum chuck, the space defined by the wafer and the area of the vacuum chuck encircled by the inner sealing ring is vacuumized for holding and positioning the wafer on the vacuum chuck, and the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck is filled with pressurized gas for making the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck exceed atmospheric pressure for preventing liquid from getting into the center area of the backside of the wafer.
30. The apparatus as claimed in claim 29, wherein the outer groove of the vacuum chuck is L- shaped.
31. The apparatus as claimed in claim 29, wherein the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck is 1-1.5 atmospheres.
32. The apparatus as claimed in claim 31, wherein the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck is 1.2 atmospheres.
33. The apparatus as claimed in claim 29, wherein the vacuum chuck further has a gas flow groove between the inner groove and the outer groove, a plurality of first gas holes are evenly formed in the gas flow groove, the pressurized gas is supplied through the first gas holes for filling the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck with the pressurized gas.
34. The apparatus as claimed in claim 29, wherein the vacuum chuck comprises: several interconnected vacuum slots which are connected to the inner groove; several vacuum passages vertically pass through the vacuum chuck and connect to the vacuum slots;
wherein the space defined by the wafer and the area of the vacuum chuck encircled by the inner sealing ring is vacuumized through the vacuum passages and the vacuum slots for holding and positioning the wafer on the vacuum chuck.
35. The apparatus as claimed in claim 29, wherein the vacuum chuck comprises a vacuum groove, the vacuum groove is ring-shaped and is close to the centre point of the vacuum chuck, the area of the vacuum chuck which is encircled by the vacuum groove defines several interconnected vacuum slots connecting to the vacuum groove and several vacuum passages vertically passing through the vacuum chuck and connecting to the vacuum slots, wherein the space defined by the wafer and the area of the vacuum chuck encircled by the vacuum groove is vacuumized through the vacuum passages and the vacuum slots for holding and positioning the wafer on the vacuum chuck.
36. The apparatus as claimed in claim 35, wherein the vacuum chuck further comprising a sealing member disposed in the vacuum groove, the sealing member having a horizontal part and a lateral part approximately vertically connecting to the horizontal part and gradually extending outward from the horizontal part, the horizontal part of the sealing member fixed in the vacuum groove by a fixing member, the lateral part of the sealing member pressed against a top surface of the vacuum chuck.
37. The apparatus as claimed in claim 29, further comprising a supporting platform, a supporting shaft and an actuator, the supporting platform including a horizontal platform for supporting the vacuum chuck and a vertical axle connecting with the horizontal platform and received in the supporting shaft, the actuator connecting to the vertical axle and driving the vertical axle rotating in the supporting shaft, which further drives the vacuum chuck rotating along with the supporting platform.
38. The apparatus as claimed in claim 37, wherein the vacuum chuck defines a plurality of gas passages for supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck with the pressurized gas.
39. The apparatus as claimed in claim 38, wherein every gas passage connects with an end of a gas channel defined in the supporting platform, the gas channel passes through the horizontal platform and the vertical axle of the supporting platform, an end of the gas channel which is located in the horizontal platform connects with the gas passage, the other end of the gas channel which is located in the vertical axle connects with an annular gas chamber defined in the supporting shaft, the annular gas chamber further connects with a pressurized gas source through a gas inlet defined on the supporting shaft.
40. The apparatus as claimed in claim 37, wherein the supporting platform defines a vacuum channel for vacuumizing the vacuum chuck, the vacuum channel passes through the horizontal platform and the vertical axle of the supporting platform, an end of the vacuum channel located in the horizontal platform connects with the vacuum chuck, the other end of the vacuum channel located in the vertical axle connects with an annular vacuum chamber defined in the supporting shaft, the annular vacuum chamber further connects with a vacuum source through a vacuum inlet defined on the supporting shaft.
41. A method for removing a film on an edge of backside of a wafer, comprising:
putting a wafer on a vacuum chuck of an apparatus;
vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck;
supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer sealing ring disposed in an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck with the pressurized gas, therefore making the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck maintain positive pressure; driving the vacuum chuck rotating at a rotational speed;
spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer;
cleaning the wafer;
drying the wafer; stopping supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer sealing ring of the vacuum chuck; releasing the wafer;
taking the wafer away from the vacuum chuck.
42. The method as claimed in claim 41, wherein the step of putting a wafer on a vacuum chuck of an apparatus further including aligning the center of the wafer to the center of the vacuum chuck and aligning a notch of the wafer to a notch of the vacuum chuck.
43. The method as claimed in claim 41, wherein the positive pressure is an atmospheric pressure.
44. The method as claimed in claim 41, wherein the positive pressure is greater than an atmospheric pressure.
45. The method as claimed in claim 44, wherein the positive pressure is 1-1.5 atmospheres.
46. The method as claimed in claim 45, wherein the positive pressure is 1.2 atmospheres.
47. The method as claimed in claim 41, further comprising detecting whether the airtightness of the apparatus meets requirement before spraying liquid to the wafer.
48. The method as claimed in claim 47, wherein detecting the airtightness of the apparatus includes vacuating the vacuum chuck and observing whether the vacuum pressure is changed, and increasing the pressure of the pressurized gas and observing whether the pressure of the pressurized gas is changed.
49. The method as claimed in claim 41, wherein the step of cleaning the wafer further including spraying deionized water to the wafer to clean the wafer.
50. The method as claimed in claim 41, wherein the step of drying the wafer further including rotating the vacuum chuck at a high rotational speed to dry the wafer and subsequently, spraying N2 to the surface of the wafer to dry the wafer.
51. A method for removing a film on an edge of backside of a wafer, comprising:
putting a wafer on a vacuum chuck of an apparatus;
vacuating the space defined by the wafer and the area of the vacuum chuck encircled by an inner sealing ring disposed in an inner groove of the vacuum chuck for holding and positioning the wafer on the vacuum chuck;
supplying pressurized gas to the space defined by the wafer and the area between the inner sealing ring and an outer groove of the vacuum chuck for filling the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck with the pressurized gas, therefore making the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck exceed atmospheric pressure;
driving the vacuum chuck rotating at a rotational speed;
spraying etchant to the edge of the backside of the wafer to remove the film formed on the edge of the backside of the wafer;
cleaning the wafer;
drying the wafer;
stopping supplying the pressurized gas to the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck; releasing the wafer;
taking the wafer away from the vacuum chuck.
52. The method as claimed in claim 51, wherein the step of putting a wafer on a vacuum chuck of an apparatus further including aligning the center of the wafer to the center of the vacuum chuck and aligning a notch of the wafer to a notch of the vacuum chuck.
53. The method as claimed in claim 51, wherein the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck is 1-1.5 atmospheres.
54. The method as claimed in claim 53, wherein the gas pressure of the space defined by the wafer and the area between the inner sealing ring and the outer groove of the vacuum chuck is 1.2 atmospheres.
55. The method as claimed in claim 51, further comprising detecting whether the airtightness of the apparatus meets requirement before spraying liquid to the wafer.
56. The method as claimed in claim 51, wherein the step of cleaning the wafer further including spraying deionized water to the wafer to clean the wafer.
57. The method as claimed in claim 51, wherein the step of drying the wafer further including rotating the vacuum chuck at a high rotational speed to dry the wafer and subsequently, spraying N2 to the surface of the wafer to dry the wafer.
PCT/CN2014/079323 2014-06-06 2014-06-06 Apparatus and method for removing film on edge of backside of wafer WO2015184628A1 (en)

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CN201480079603.3A CN107615443B (en) 2014-06-06 2014-06-06 Device and method for removing edge film on back of wafer
KR1020177000377A KR102301413B1 (en) 2014-06-06 2014-06-06 Apparatus and method for removing film on edge of backside of wafer

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