CN100576457C - 晶片的单片式蚀刻方法及其蚀刻设备 - Google Patents

晶片的单片式蚀刻方法及其蚀刻设备 Download PDF

Info

Publication number
CN100576457C
CN100576457C CN200810090043A CN200810090043A CN100576457C CN 100576457 C CN100576457 C CN 100576457C CN 200810090043 A CN200810090043 A CN 200810090043A CN 200810090043 A CN200810090043 A CN 200810090043A CN 100576457 C CN100576457 C CN 100576457C
Authority
CN
China
Prior art keywords
wafer
gap
etchant
blowing mechanism
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810090043A
Other languages
English (en)
Chinese (zh)
Other versions
CN101276756A (zh
Inventor
加藤健夫
桥井友裕
村山克彦
古屋田荣
高石和成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of CN101276756A publication Critical patent/CN101276756A/zh
Application granted granted Critical
Publication of CN100576457C publication Critical patent/CN100576457C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
CN200810090043A 2007-03-30 2008-03-31 晶片的单片式蚀刻方法及其蚀刻设备 Expired - Fee Related CN100576457C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-090832 2007-03-30
JP2007090832 2007-03-30
JP2007090832A JP2008251806A (ja) 2007-03-30 2007-03-30 ウェーハの枚葉式エッチング方法及びそのエッチング装置

Publications (2)

Publication Number Publication Date
CN101276756A CN101276756A (zh) 2008-10-01
CN100576457C true CN100576457C (zh) 2009-12-30

Family

ID=39616494

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810090043A Expired - Fee Related CN100576457C (zh) 2007-03-30 2008-03-31 晶片的单片式蚀刻方法及其蚀刻设备

Country Status (7)

Country Link
US (1) US20090181546A1 (enExample)
EP (1) EP1975977B1 (enExample)
JP (1) JP2008251806A (enExample)
KR (1) KR100927855B1 (enExample)
CN (1) CN100576457C (enExample)
MY (1) MY147183A (enExample)
TW (1) TW200903622A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106971958A (zh) * 2016-01-14 2017-07-21 弘塑科技股份有限公司 单晶圆湿式处理装置

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115728A (ja) * 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法
JP2008218545A (ja) * 2007-03-01 2008-09-18 Sumco Corp ウェーハの枚葉式エッチング装置
EP2051530A2 (en) 2007-10-17 2009-04-22 Electronics and Telecommunications Research Institute Video encoding apparatus and method using pipeline technique with variable time slot
TWI465313B (zh) * 2009-04-07 2014-12-21 Kromax Internat Corp 非接觸式定位平臺與定位方法
US20130068264A1 (en) * 2011-09-21 2013-03-21 Nanya Technology Corporation Wafer scrubber apparatus
JPWO2013114589A1 (ja) * 2012-02-01 2015-05-11 三菱電機株式会社 光起電力装置の製造方法および光起電力装置の製造装置
US9589818B2 (en) * 2012-12-20 2017-03-07 Lam Research Ag Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same
TWI569349B (zh) * 2013-09-27 2017-02-01 斯克林集團公司 基板處理裝置及基板處理方法
WO2015184628A1 (en) * 2014-06-06 2015-12-10 Acm Research (Shanghai) Inc. Apparatus and method for removing film on edge of backside of wafer
KR101540885B1 (ko) * 2014-07-29 2015-07-30 주식회사 엘지실트론 웨이퍼의 결함 측정장치
JP6389089B2 (ja) * 2014-09-18 2018-09-12 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2015213189A (ja) * 2015-07-09 2015-11-26 三菱電機株式会社 光起電力装置の製造方法
WO2017192994A1 (en) * 2016-05-06 2017-11-09 Applied Materials, Inc. Wafer profiling for etching system
JP6836912B2 (ja) * 2017-01-17 2021-03-03 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
CN110970332B (zh) * 2019-12-18 2022-12-13 深圳市凯新达电子有限公司 一种以二氧化硅矿石为原料的集成电路用晶片检测设备
CN111403323A (zh) * 2020-04-27 2020-07-10 绍兴同芯成集成电路有限公司 一种用于晶圆与环形玻璃载板的蚀刻装置
CN111613512B (zh) * 2020-06-22 2022-10-21 北京北方华创微电子装备有限公司 半导体设备及其工艺腔室
TWI747580B (zh) * 2020-10-28 2021-11-21 辛耘企業股份有限公司 晶圓蝕刻裝置
CN114446815A (zh) * 2020-10-30 2022-05-06 辛耘企业股份有限公司 晶圆蚀刻装置
KR102656188B1 (ko) * 2022-02-21 2024-04-11 (주)디바이스이엔지 기판 식각 처리장치 및 기판 가장자리의 식각 제어 방법
CN114695210B (zh) * 2022-06-02 2022-09-09 西安奕斯伟材料科技有限公司 一种用于硅片边缘刻蚀的装置和方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4544446A (en) * 1984-07-24 1985-10-01 J. T. Baker Chemical Co. VLSI chemical reactor
US5364474A (en) * 1993-07-23 1994-11-15 Williford Jr John F Method for removing particulate matter
SG98022A1 (en) * 1996-09-24 2003-08-20 Tokyo Electron Ltd Method and apparatus for cleaning treatment
US6551488B1 (en) * 1999-04-08 2003-04-22 Applied Materials, Inc. Segmenting of processing system into wet and dry areas
US6827814B2 (en) * 2000-05-08 2004-12-07 Tokyo Electron Limited Processing apparatus, processing system and processing method
JP2002064079A (ja) * 2000-08-22 2002-02-28 Disco Abrasive Syst Ltd エッチング装置
EP1372186B1 (de) * 2000-10-31 2008-12-10 Sez Ag Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen
US6770565B2 (en) * 2002-01-08 2004-08-03 Applied Materials Inc. System for planarizing metal conductive layers
KR20030089326A (ko) * 2002-05-17 2003-11-21 삼성전자주식회사 웨이퍼 플랫존 경사면 세정 방법, 세정 장치 및 세정기능을 포함한 웨이퍼 가장자리 노광 장치
US7354869B2 (en) * 2004-04-13 2008-04-08 Kabushiki Kaisha Toshiba Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method
JP2006013107A (ja) * 2004-06-25 2006-01-12 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4601341B2 (ja) * 2004-07-02 2010-12-22 大日本スクリーン製造株式会社 基板処理装置
JP4464293B2 (ja) 2005-02-28 2010-05-19 株式会社高田工業所 半導体基板処理装置及び半導体基板処理方法
JP2007115728A (ja) 2005-10-18 2007-05-10 Sumco Corp ウェーハの枚葉式エッチング装置及びウェーハの枚葉式エッチング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106971958A (zh) * 2016-01-14 2017-07-21 弘塑科技股份有限公司 单晶圆湿式处理装置

Also Published As

Publication number Publication date
EP1975977A1 (en) 2008-10-01
KR20080089241A (ko) 2008-10-06
JP2008251806A (ja) 2008-10-16
TW200903622A (en) 2009-01-16
EP1975977B1 (en) 2011-05-04
MY147183A (en) 2012-11-14
US20090181546A1 (en) 2009-07-16
KR100927855B1 (ko) 2009-11-23
CN101276756A (zh) 2008-10-01

Similar Documents

Publication Publication Date Title
CN100576457C (zh) 晶片的单片式蚀刻方法及其蚀刻设备
KR100943725B1 (ko) 매엽식 웨이퍼 식각 장치
US8466071B2 (en) Method for etching single wafer
US11640911B2 (en) Substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate
KR100760491B1 (ko) 웨이퍼의 매엽식 에칭 장치 및 웨이퍼의 매엽식 에칭 방법
US7906438B2 (en) Single wafer etching method
US9401283B2 (en) Substrate treatment method
CN216054569U (zh) 一种等离子体刻蚀机的腔体
CN102473626A (zh) 湿式处理装置以及湿式处理方法
KR100796544B1 (ko) 웨이퍼의 매엽식 에칭 방법
KR20180037903A (ko) 에지 링을 포함한 스핀 척
JP2008282938A (ja) ウェーハの枚葉式エッチング装置
JP2007207811A (ja) ウェーハの枚葉式エッチング装置
CN113892167B (zh) 衬底处理方法及衬底处理装置
JP2002043400A (ja) 回転支持装置
JP2007305644A (ja) ウェーハの枚葉式エッチング装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20091230

Termination date: 20120331